My Inquiry
My Account
Renesas R1RW0408DGE-2PI#B0
- Part No.:
- R1RW0408DGE-2PI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0408DGE-2PI#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,774
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1RW0408DGE-2PI#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating at 3.3 V ± 0.3 V with 12 ns max access time and −40 to +85°C industrial temperature range. It serves as cache or buffer memory in embedded systems requiring fast, wide-bit-width, fully static operation without clocks or strobes.
For engineers reviewing the R1RW0408DGE-2PI#B0 datasheet, R1RW0408DGE-2PI#B0 pinout, R1RW0408DGE-2PI#B0 application, or R1RW0408DGE-2PI#B0 equivalent, this page delivers verified package mapping (36-pin SOJ), TTL/CMOS-compatible I/O behavior, standby current specs (5 mA CMOS / 40 mA TTL), and real-world timing constraints for read/write cycle validation in high-density surface-mount designs.
Technical Context
The R1RW0408DGE-2PI#B0 implements a 6-transistor memory cell architecture with full static operation-no refresh, no clock, no timing strobe required. Its equal access and cycle times (both ≤12 ns) simplify timing budgeting in synchronous bus interfaces.
It features center VCC/VSS pinout for noise reduction, direct TTL compatibility on all inputs/outputs, and dual standby modes: 40 mA TTL-level and 5 mA CMOS-level, selectable via control voltage thresholds on CS# and input pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512 kwords × 8 bits) - supports byte-wide data paths without external multiplexing |
| Access time | 12 ns max - enables integration into 83 MHz bus systems with zero wait states |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard LVTTL and low-voltage CMOS logic domains |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade embedded applications |
| Standby current | 5 mA (CMOS mode) - enables ultra-low-power sleep states when CS# held high and inputs biased |
| Output drive | VOL ≤ 0.4 V @ 8 mA, VOH ≥ 2.4 V @ −4 mA - ensures robust signal integrity across 30–50 Ω PCB traces |
| Input leakage | ≤ 2 µA - minimizes bus loading in high-fanout address/data configurations |
Pinout & Package
Packaged in 400-mil 36-pin plastic SOJ (36P0K), surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; A0 = LSB, A18 = MSB |
| I/O1–I/O8 | Data input/output | Bi-directional 8-bit data bus with TTL-compatible levels and 8 mA sink capability |
| CS# | Chip select | Active-low enable controlling device activation and standby current mode selection |
| OE# | Output enable | Active-low control for output buffer gating; independent of WE# for read-only access |
| WE# | Write enable | Active-low write strobe; combined with CS# to initiate write cycles per timing waveforms |
| VCC | Power supply | 3.3 V core supply; two dedicated pins (pins 9 and 28) for reduced IR drop and noise coupling |
| VSS | Ground | Ground reference; two dedicated pins (pins 10 and 27) for symmetric return path layout |
| NC | No connection | Pins 19 and 36 are unconnected; must remain floating-no routing or soldering |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no timing strobe required-simplifies controller interface and eliminates dynamic power spikes |
| Center VCC/VSS pinout | Reduces simultaneous switching noise (SSN) and improves signal integrity on dense PCB layouts |
| Dual standby current modes | 5 mA (CMOS) or 40 mA (TTL) depending on CS# and input bias-enables optimized power management per system state |
| TTL-compatible I/O | All inputs accept TTL voltage thresholds; outputs drive standard TTL loads-eliminates level-shifter components |
| 12 ns read/write cycle symmetry | Equal tRC and tWC (12 ns max) simplifies bus arbitration and eliminates asymmetric timing margins |
Applications
| Industrial PLC Data Buffers | Medical Imaging Frame Stores |
|---|---|
Use Scenario: Real-time buffering of sensor-acquired waveform data in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed SRAM acting as dual-port-accessible frame buffer between ADC interface and CPU bus. Use Value: 12 ns access enables sub-100 ns sampling-to-process latency; 8-bit width matches common industrial serial ADC output formats. |
Use Scenario: Temporary storage of digitized X-ray or ultrasound frames prior to compression and transmission in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-power, wide-temperature SRAM providing non-refreshed frame capture during battery-operated acquisition bursts. Use Value: 5 mA CMOS standby current extends battery life between imaging sessions; −40°C to +85°C rating supports field-deployed equipment. |
| Automotive Infotainment Caches | Test & Measurement Instrument Memory |
Use Scenario: Instruction and lookup table caching in head-unit microcontrollers handling navigation rendering and audio DSP. IC Role / Device Role / Timing Role: External cache SRAM interfaced directly to ARM9 or SH-4 bus with no glue logic. Use Value: TTL-compatible I/O eliminates level shifters; 36-pin SOJ footprint allows compact placement near processor BGA packages. |
Use Scenario: Acquisition memory in digital oscilloscopes and logic analyzers capturing high-speed digital signals at multi-MHz sampling rates. IC Role / Device Role / Timing Role: High-bandwidth buffer staging raw samples before FPGA-based decimation or FFT processing. Use Value: 12 ns cycle time supports >83 MHz effective sampling rate; 4 Mbit capacity stores up to 512k samples at 8-bit resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZSXI (Infineon) | 4 Mbit (512k × 8), 45 ns access, 3.3 V, 44-pin TSOP-II - slower but higher pin count and wider availability | Targeted at cost-sensitive industrial controls where timing margin >30 ns exists | Select if board layout accommodates larger TSOP-II footprint and system timing budget allows ≥45 ns access |
| IS61LV5128AL-12MLI (ISSI) | 4 Mbit (512k × 8), 12 ns access, 3.3 V, 32-pin SOJ - same speed but 4-pin smaller SOJ package | Used in space-constrained modules where 36-pin SOJ is unavailable or legacy tooling prohibits change | Select only after verifying pinout compatibility (A14–A18 and NC pin positions differ); not drop-in replaceable |
Compared with CY62148EV30LL-45ZSXI and IS61LV5128AL-12MLI, the R1RW0408DGE-2PI#B0 uniquely combines 12 ns performance, 36-pin SOJ packaging, and dual-mode standby current-making it optimal for industrial systems needing both speed and flexible power-state control within tight board area constraints.
Availability
R1RW0408DGE-2PI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, and automotive infotainment caches requiring stable component supply across extended product lifecycles.
Supply support for R1RW0408DGE-2PI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0408DI Series was designed specifically for high-speed, wide-temperature buffer and cache applications in industrial control and instrumentation systems requiring reliable, fully static, pin-compatible SRAM alternatives to older 5 V families.
FAQ
What is the maximum operating frequency supported by the R1RW0408DGE-2PI#B0?
The R1RW0408DGE-2PI#B0 does not operate on a clock signal-it is a fully static RAM. Its 12 ns access and cycle times support bus frequencies up to approximately 83 MHz in zero-wait-state configurations. System timing must comply with tRC, tWC, tAA, and tACS limits defined in the AC characteristics table; actual achievable throughput depends on controller setup/hold margins and PCB trace lengths.
Does the R1RW0408DGE-2PI#B0 require external refresh circuitry?
No, the R1RW0408DGE-2PI#B0 is a true static RAM using 6-transistor memory cells and requires no refresh cycles, clocks, or timing strobes. This eliminates refresh overhead in microcontroller or FPGA-based systems and guarantees deterministic access latency under all operating conditions within its specified temperature and voltage ranges.
What is the function of the NC pins on the R1RW0408DGE-2PI#B0?
The R1RW0408DGE-2PI#B0 has two NC (No Connection) pins: pin 19 and pin 36. These pins are internally unconnected and must remain electrically floating-no routing, soldering, or grounding is permitted. Violating this may cause unpredictable behavior or damage due to internal parasitic coupling or ESD path disruption.
Can the R1RW0408DGE-2PI#B0 be used with 5 V logic interfaces?
No-the R1RW0408DGE-2PI#B0 is strictly a 3.3 V device with absolute maximum VCC of +4.6 V and VIH threshold of 2.0 V minimum. Direct connection to 5 V logic violates its DC operating conditions and risks permanent damage. Level translation (e.g., TXB0108 or discrete MOSFET translators) is mandatory for interfacing with 5 V buses.
How does the standby current differ between TTL and CMOS modes on the R1RW0408DGE-2PI#B0?
The R1RW0408DGE-2PI#B0 achieves 5 mA standby current (ISB1) only when CS# is held high (VIH) and all inputs are biased within 0.2 V of VSS or VCC-activating its CMOS-mode internal circuitry. If inputs float or violate those thresholds, it defaults to TTL-mode standby drawing up to 40 mA (ISB). Stable biasing is essential to realize the lower power state.
R1RW0408DGE-2PI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RW0408DGE-2PI#B0 FAQ
1.How can I place an order for R1RW0408DGE-2PI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0408DGE-2PI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0408DGE-2PI#B0 reliable?
The price and inventory of R1RW0408DGE-2PI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0408DGE-2PI#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0408DGE-2PI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0408DGE-2PI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0408DGE-2PI#B0?
R1RW0408DGE-2PI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0408DGE-2PI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0408DGE-2PI#B0?
For technical support, including R1RW0408DGE-2PI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0408DGE-2PI#B0 requirements.
6.How does Aetrix verify that R1RW0408DGE-2PI#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0408DGE-2PI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0408DGE-2PI#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0408DGE-2PI#B0?
All R1RW0408DGE-2PI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0408DGE-2PI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0408DGE-2PI#B0 part is unused and in its original packaging.
Return procedure for R1RW0408DGE-2PI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0408DGE-2PI#B0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
