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Renesas R1RW0408DGE-2PI#B1
- Part No.:
- R1RW0408DGE-2PI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0408DGE-2PI#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,379
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Product details
Overview
R1RW0408DGE-2PI#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating from a single 3.3V ±0.3V supply with 12ns max access time and −40°C to +85°C industrial temperature range. It serves as cache or buffer memory in embedded control systems requiring TTL-compatible I/O, low-power standby modes, and surface-mount SOJ packaging.
For engineers reviewing the R1RW0408DGE-2PI#B1 datasheet, R1RW0408DGE-2PI#B1 pinout, R1RW0408DGE-2PI#B1 application, or R1RW0408DGE-2PI#B1 equivalent, key selection criteria include guaranteed 12ns read/write cycle timing, dual standby current specs (40mA TTL / 5mA CMOS), 36-pin SOJ mechanical compatibility, and direct TTL-level interface without level-shifting.
Technical Context
The R1RW0408DGE-2PI#B1 implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its control logic uses active-low chip select (CS#), output enable (OE#), and write enable (WE#) signals to manage read/write/standby states deterministically.
All I/O pins are TTL-compatible with VIH ≥2.0V and VIL ≤0.8V at VCC = 3.3V, and DC leakage is limited to ±2μA per pin. The device supports equal access and cycle times (tRC = tAA = tWC = 12ns), enabling deterministic timing in synchronous bus interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512-kword × 8-bit) - supports byte-wide data paths without external multiplexing |
| Access time | 12 ns max - guarantees sub-83 MHz bus operation with setup/hold margin |
| Supply voltage | 3.3 V ±0.3 V - compatible with standard LVTTL and 3.3V logic families |
| Operating current | 100 mA max - defines worst-case power delivery requirement under full read/write cycling |
| Standby current | 5 mA (CMOS) / 40 mA (TTL) - enables low-power sleep mode selection based on system control logic |
| Temperature range | −40°C to +85°C - qualified for industrial-grade embedded applications without derating |
| Input capacitance | 6 pF max - limits trace-length-dependent signal integrity degradation on address/data buses |
Pinout & Package
Package: 400-mil 36-pin plastic SOJ (Small Outline J-Lead), surface-mount compatible with JEDEC MS-013AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; no internal latching |
| I/O1–I/O8 | Data input/output | Bidirectional 8-bit data bus with TTL-compatible drive strength (IOH = −4mA, IOL = 8mA) |
| CS# | Chip select | Active-low enable controlling device participation in bus cycles; overrides OE# and WE# when high |
| OE# | Output enable | Active-low control for output buffer tri-state; only effective when CS# is low |
| WE# | Write enable | Active-low signal initiating write cycles; combined with CS# to define write window timing |
| VCC | Power supply | Primary 3.3V supply pin; all VCC pins must be tied to same potential |
| VSS | Ground | Reference ground; all VSS pins must be tied to same potential |
| NC | No connection | Unbonded pin; must remain unconnected per Renesas design |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no timing strobes required - simplifies system timing design and eliminates dynamic power overhead |
| Equal access and cycle times | tAA = tRC = tWC = 12 ns - enables fixed-latency bus arbitration and predictable throughput in burst transfers |
| Direct TTL compatibility | All inputs and outputs meet TTL voltage thresholds at 3.3V - eliminates need for level translators in mixed-voltage systems |
| Dual standby current modes | ISB1 = 5 mA (CMOS) and ISB = 40 mA (TTL) - allows selection of lowest-power state based on control signal logic family |
| Industrial temperature range | −40°C to +85°C operation - validated for use in motor drives, PLCs, and outdoor instrumentation without thermal management |
Applications
| Industrial PLC Data Buffer | Automotive Engine Control Unit Cache |
|---|---|
Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed buffer memory holding I/O image tables and intermediate calculation results between CPU and fieldbus peripherals. Use Value: 12ns access time ensures zero-wait-state operation with 32-bit microcontrollers running at 66 MHz, reducing scan cycle jitter. | Use Scenario: Storing sensor fusion outputs and actuator command histories in engine control units exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for real-time PID loop updates and fault logging during transient combustion events. Use Value: −40°C to +85°C qualification and 5mA CMOS standby current extend battery life during vehicle sleep mode while maintaining data retention. |
| Medical Imaging Frame Buffer | Test & Measurement Equipment FIFO |
Use Scenario: Capturing and staging raw pixel data from high-resolution X-ray detectors before compression and transmission. IC Role / Device Role / Timing Role: Byte-wide frame buffer interfacing directly to ADC output buses and DSP memory controllers. Use Value: 8-bit parallel I/O and TTL-compatible signaling eliminate glue logic, reducing BOM count and board area in compact diagnostic modules. | Use Scenario: Implementing acquisition buffers in digital oscilloscopes and logic analyzers requiring precise trigger-aligned data capture. IC Role / Device Role / Timing Role: High-reliability temporary storage for sampled waveform segments prior to USB/FPGA transfer. Use Value: Guaranteed 12ns cycle time supports 83 MSPS sampling rates with deterministic latency, critical for time-domain accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZAXI | 45ns access time, 5V supply, 32-pin TSOP-II package | Slower timing, higher voltage, different pinout - requires PCB redesign and level translation | Select only if legacy 5V system integration or longer timing margins are acceptable |
| AS6C4008-12BIN | 12ns access time, 3.3V supply, 32-pin SOP package, no CMOS standby mode | Same speed and voltage but lacks 5mA ISB1 mode; smaller package reduces board space but limits thermal dissipation | Prefer when board area is constrained and TTL standby current suffices for system power budget |
Compared with CY62148EV30LL-45ZAXI and AS6C4008-12BIN, the R1RW0408DGE-2PI#B1 uniquely delivers 12ns performance at 3.3V with dual standby modes and SOJ packaging optimized for industrial reflow profiles - making it the only option meeting simultaneous requirements for speed, low-power sleep, and ruggedized assembly.
Availability
R1RW0408DGE-2PI#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU caching, medical imaging frame storage, and test equipment FIFO applications requiring stable component supply across extended product lifecycles.
Supply support for R1RW0408DGE-2PI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0408DI Series was designed specifically for high-reliability, wide-temperature embedded systems needing fast, pin-compatible SRAM with minimal external support circuitry and robust thermal performance.
FAQ
What is the maximum guaranteed access time for R1RW0408DGE-2PI#B1?
The R1RW0408DGE-2PI#B1 has a maximum guaranteed access time of 12 ns under industrial temperature conditions (−40°C to +85°C) and 3.3V ±0.3V supply. This value is specified as tAA in the AC Characteristics table and applies to address-to-data-out timing with CS# and OE# asserted low. It is not a typical value but a production-tested maximum limit ensuring deterministic timing in real-world designs.
Does R1RW0408DGE-2PI#B1 require an external clock or refresh signal?
No, the R1RW0408DGE-2PI#B1 is a fully static RAM and requires no external clock, refresh signal, or timing strobe. Its operation depends solely on address, data, and control signals (CS#, OE#, WE#). This eliminates timing-critical clock distribution and simplifies integration into asynchronous or loosely coupled bus architectures where R1RW0408DGE-2PI#B1 serves as a deterministic memory node.
What are the two standby current specifications for R1RW0408DGE-2PI#B1 and how do they differ?
The R1RW0408DGE-2PI#B1 specifies two standby current modes: ISB = 40 mA (TTL-compatible standby) and ISB1 = 5 mA (CMOS-compatible standby). ISB1 activates when CS# is held high and all inputs are within CMOS voltage thresholds (0V ≤ VIN ≤ 0.2V or VCC − 0.2V ≤ VIN ≤ VCC), enabling ultra-low-power sleep. ISB applies under broader TTL input conditions. Designers select based on control logic family driving CS# and other inputs.
Can R1RW0408DGE-2PI#B1 be used in a 5V system?
No, R1RW0408DGE-2PI#B1 is rated exclusively for 3.3V ±0.3V operation (3.0V to 3.6V). Applying 5V exceeds its absolute maximum supply rating of +4.6V and risks permanent damage. It is not 5V-tolerant: VIH max is VCC + 0.5V (≤4.1V), and VIL min is −0.5V. Interfacing with 5V systems requires level-shifting circuitry - R1RW0408DGE-2PI#B1 itself must operate from a clean 3.3V rail.
What does the "-2PI" suffix indicate in R1RW0408DGE-2PI#B1?
The "-2PI" suffix in R1RW0408DGE-2PI#B1 denotes the 12ns access time grade and 400-mil 36-pin plastic SOJ package per Renesas ordering nomenclature. "2" corresponds to 12ns speed, "P" indicates plastic SOJ, and "I" specifies industrial temperature range (−40°C to +85°C). The "#B1" is a Renesas tape-and-reel packaging code indicating bulk packaging format compliant with EIA-481 standards.
R1RW0408DGE-2PI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RW0408DGE-2PI#B1 FAQ
1.How can I place an order for R1RW0408DGE-2PI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0408DGE-2PI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0408DGE-2PI#B1 reliable?
The price and inventory of R1RW0408DGE-2PI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0408DGE-2PI#B1 is usually 5 days.
3.What payment methods are accepted for R1RW0408DGE-2PI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0408DGE-2PI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0408DGE-2PI#B1?
R1RW0408DGE-2PI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0408DGE-2PI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0408DGE-2PI#B1?
For technical support, including R1RW0408DGE-2PI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0408DGE-2PI#B1 requirements.
6.How does Aetrix verify that R1RW0408DGE-2PI#B1 is sourced from the original manufacturer or authorized distributors?
All R1RW0408DGE-2PI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0408DGE-2PI#B1 meets industry standards.
7.What is the process for return or replacement of R1RW0408DGE-2PI#B1?
All R1RW0408DGE-2PI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0408DGE-2PI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0408DGE-2PI#B1 part is unused and in its original packaging.
Return procedure for R1RW0408DGE-2PI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0408DGE-2PI#B1 Tags
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