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Renesas R1RW0408DGE-2PR#B0
- Part No.:
- R1RW0408DGE-2PR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0408DGE-2PR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,835
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Product details
Overview
R1RW0408DGE-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 512-kword × 8-bit, operating at 3.3 V ± 0.3 V with 12 ns maximum access time and TTL-compatible I/O. It features center VCC/VSS pinout, low standby current (5 mA max), and is designed for cache and buffer memory in embedded systems requiring wide bit-width, high-density, and zero-clock operation.
For engineers reviewing the R1RW0408DGE-2PR#B0 datasheet, R1RW0408DGE-2PR#B0 pinout, R1RW0408DGE-2PR#B0 application, or R1RW0408DGE-2PR#B0 equivalent, key selection criteria include 36-pin SOJ package compatibility, 12 ns AC timing compliance, CMOS/TTL interface support, data retention down to 2.0 V, and industrial temperature range (0°C to +70°C) suitability.
Technical Context
The R1RW0408DGE-2PR#B0 implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its control logic uses active-low CS#, OE#, and WE# signals to manage read/write cycles, with equal access and cycle times (12 ns) ensuring deterministic timing behavior in synchronous bus environments.
It supports three power states: active operation (100 mA max ICC), TTL standby (40 mA max ISB), and CMOS standby (5 mA max ISB1), with data retention capability at VCC ≥ 2.0 V. Pinout follows center VCC/VSS configuration to minimize noise coupling and improve signal integrity in high-density PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (512 kwords × 8 bits) - provides byte-wide data path for efficient CPU/cache interfacing |
| Access time | 12 ns (max) - enables direct connection to 80 MHz system buses without wait states |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard LVTTL and 3.3 V logic families |
| Standby current | 5 mA (max, CMOS mode) - reduces system power during idle periods in portable/embedded applications |
| Data retention voltage | 2.0 V (min) - maintains stored data during brown-out or controlled power-down sequences |
| Operating temperature | 0°C to +70°C - certified for commercial/industrial equipment environments |
| Package | 400-mil 36-pin plastic SOJ - surface-mount compatible with automated assembly and high board density |
Pinout & Package
Package: 400-mil 36-pin plastic SOJ (36P0K), center VCC/VSS configuration, JEDEC-standard footprint for high-density surface mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; LSB-to-MSB mapping matches standard SRAM controllers |
| I/O1–I/O8 | Data input/output | Bi-directional 8-bit data bus with TTL-compatible drive strength (VOL ≤ 0.4 V @ 8 mA, VOH ≥ 2.4 V @ −4 mA) |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address setup (tAS = 0 ns) |
| OE# | Output enable | Active-low control for output buffer; tOE = 6 ns ensures fast read response after enable assertion |
| WE# | Write enable | Active-low write strobe; tWP = 8 ns minimum pulse width defines reliable write window |
| VCC / VSS | Power / Ground | Center-placed dual VCC (pins 9, 28) and dual VSS (pins 10, 27) reduce IR drop and improve noise immunity |
| NC | No connection | Pins 19 and 36 are unconnected; must remain floating per design - no external tie required |
Key Features
| Feature | Design Value |
|---|---|
| Single 3.3 V supply operation | Eliminates need for dual-voltage rails or level shifters in modern 3.3 V system designs |
| Zero-clock static architecture | Removes timing constraints from clock distribution networks, simplifying PCB layout and reducing EMI |
| Equal access and cycle times | Enables predictable bus arbitration and eliminates variable latency in burst-mode memory access |
| TTL-compatible I/O | Direct interface with legacy and contemporary microcontrollers, FPGAs, and ASICs without external buffers |
| Low-power CMOS standby mode | Reduces quiescent current by 87.5% vs. TTL standby, critical for battery-backed or energy-sensitive systems |
Applications
| Cache Memory | Buffer Memory |
|---|---|
|
Use Scenario: High-speed instruction/data cache between CPU and main memory in industrial controllers. IC Role / Device Role / Timing Role: Byte-wide static storage holding recently accessed instructions or operands; operates on every CPU bus cycle with 12 ns latency. Use Value: Eliminates wait states for 80 MHz processors, improving real-time determinism and throughput in motion control firmware. |
Use Scenario: Data buffering in serial-to-parallel conversion for industrial fieldbus gateways (e.g., Modbus RTU to Ethernet). IC Role / Device Role / Timing Role: Temporary storage staging incoming packet payloads prior to TCP/IP stack processing; accessed asynchronously via DMA. Use Value: Absorbs bursty traffic without CPU intervention, preventing UART overrun and enabling deterministic packet handling. |
| Embedded System Boot ROM Shadow | Test Equipment Pattern Memory |
|
Use Scenario: Shadowing slow NOR flash during boot sequence in medical imaging subsystems. IC Role / Device Role / Timing Role: Volatile copy of boot code executed directly by ARM Cortex-M core; loaded once at power-up. Use Value: Reduces boot time by >60% versus direct flash execution, meeting FDA-required startup deadlines for diagnostic devices. |
Use Scenario: Storing stimulus/response patterns in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-reliability pattern store accessed at 83 MHz (12 ns cycle); contents verified pre-test via checksum. Use Value: Enables 100% pattern coverage at production speeds while maintaining <1 ppm error rate over 10⁶ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV5128AL-12MLI | Same density, 3.3 V, 12 ns access; 44-pin TSOP-II vs. 36-pin SOJ; higher ICC (120 mA) and ISB (10 mA) | Requires PCB redesign due to different footprint and pinout; better thermal dissipation but larger area | Select when board space allows TSOP-II and higher active current is acceptable |
| MT55L2568R-12G:G | Same organization and speed; 36-pin SOJ package; supports 2.5 V/3.3 V dual supply; lower ISB1 (1 µA) | Compatible pinout but requires voltage translation if host uses strict 3.3 V only; superior ultra-low-power standby | Select for battery-powered or energy-harvesting systems where sub-mA standby is critical |
Compared with R1RW0408DGE-2PR#B0, the IS61LV5128AL-12MLI offers identical timing but demands mechanical redesign, while the MT55L2568R-12G:G preserves SOJ compatibility and cuts standby current by 99.8%, albeit with added supply flexibility that may complicate voltage rail management.
Availability
R1RW0408DGE-2PR#B0 is available at Aetrix Electronics and suitable for industrial automation controllers, medical imaging subsystems, and test equipment requiring stable component supply across multi-year production cycles.
Supply support for R1RW0408DGE-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0408D Series was developed for high-reliability, high-speed embedded memory applications demanding zero-refresh operation, TTL compatibility, and robust industrial temperature performance.
FAQ
What is the maximum operating frequency supported by the R1RW0408DGE-2PR#B0?
The R1RW0408DGE-2PR#B0 does not operate on a clock signal-it is a fully static RAM. Its 12 ns access and cycle times correspond to a maximum effective bus frequency of approximately 83 MHz in continuous read/write operations. Timing margins must account for board trace delays and controller setup/hold requirements, but no internal clock limits apply.
Does the R1RW0408DGE-2PR#B0 support data retention during power loss?
Yes, the R1RW0408DGE-2PR#B0 supports data retention at VCC as low as 2.0 V (min), with guaranteed retention current ≤ 400 µA. This feature enables safe holdover during brief brown-outs or controlled power-down sequences, provided CS# remains asserted and input voltages stay within specified limits.
Is the R1RW0408DGE-2PR#B0 pin-compatible with the 10 ns version R1RW0408DGE-0PR?
Yes, the R1RW0408DGE-2PR#B0 is pin-compatible with R1RW0408DGE-0PR-both use identical 36-pin SOJ packaging and pinout. The only difference is AC timing: the -0PR variant guarantees 10 ns access, while the -2PR variant is characterized for 12 ns. No PCB changes are required for substitution where 12 ns timing suffices.
What is the meaning of "L-version" referenced in the data retention specifications for R1RW0408DGE-2PR#B0?
The "L-version" designation in the R1RW0408DGE-2PR#B0 datasheet refers to a specific process variant optimized for ultra-low standby current (5 mA max ISB1) and low-voltage data retention (2.0 V min). All R1RW0408DGE-2PR#B0 units shipped are L-version compliant, as confirmed by Renesas' ordering information and DC characteristics tables.
Can the R1RW0408DGE-2PR#B0 be used in automotive applications?
No-the R1RW0408DGE-2PR#B0 is rated for Standard quality grade (0°C to +70°C), intended for computers, office equipment, and industrial robots. It is not qualified for automotive use (−40°C to +125°C), nor does it meet AEC-Q100 stress testing requirements. Renesas explicitly restricts its use in transportation equipment without prior written consent.
R1RW0408DGE-2PR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
R1RW0408DGE-2PR#B0 FAQ
1.How can I place an order for R1RW0408DGE-2PR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0408DGE-2PR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0408DGE-2PR#B0 reliable?
The price and inventory of R1RW0408DGE-2PR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0408DGE-2PR#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0408DGE-2PR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0408DGE-2PR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0408DGE-2PR#B0?
R1RW0408DGE-2PR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0408DGE-2PR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0408DGE-2PR#B0?
For technical support, including R1RW0408DGE-2PR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0408DGE-2PR#B0 requirements.
6.How does Aetrix verify that R1RW0408DGE-2PR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0408DGE-2PR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0408DGE-2PR#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0408DGE-2PR#B0?
All R1RW0408DGE-2PR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0408DGE-2PR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0408DGE-2PR#B0 part is unused and in its original packaging.
Return procedure for R1RW0408DGE-2PR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0408DGE-2PR#B0 Tags
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