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Renesas R1RW0416DGE-2LR#B1
- Part No.:
- R1RW0416DGE-2LR#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DGE-2LR#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:104
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Product details
Overview
R1RW0416DGE-2LR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 12ns max access time and L-version low-power standby current of 0.8mA (max). It features TTL-compatible I/O, center VCC/VSS pinout, and is designed for cache and buffer memory in embedded systems requiring battery-backed data retention down to 2.0V.
For engineers reviewing the R1RW0416DGE-2LR#B1 datasheet, R1RW0416DGE-2LR#B1 pinout, R1RW0416DGE-2LR#B1 application, or R1RW0416DGE-2LR#B1 equivalent, key selection considerations include 12ns read/write cycle timing, byte-selectable 16-bit I/O, 0.4mA max data retention current, and SOJ-44 package compatibility with high-density surface-mount layouts.
Technical Context
The R1RW0416DGE-2LR#B1 implements a fully static 6-transistor memory cell architecture with no clock or timing strobe required, enabling deterministic access and cycle times. Its dual-byte enable (UB#/LB#) supports independent upper/lower 8-bit writes and reads without external logic.
It operates across 0°C to +70°C with guaranteed data retention at VCC ≥ 2.0V and CS# held within VCC–0.2V, meeting requirements for nonvolatile backup operation in power-loss scenarios. The L-version optimization reduces standby current by >85% versus standard TTL-mode operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4 Mbit (256 kwords × 16 bits), supporting wide-data-path buffering in real-time control systems |
| Access time | 12 ns (max), enabling direct interface with 80 MHz bus clocks without wait states |
| Supply voltage | 3.3 V ±0.3 V, compatible with modern low-voltage microcontroller and FPGA I/O domains |
| Standby current | 0.8 mA (max) - L-version enables multi-day battery backup in SRAM-based NVSRAM designs |
| Data retention voltage | 2.0 V (min), allowing reliable hold mode during brown-out or controlled power-down sequences |
| Operating temperature | 0°C to +70°C, validated for commercial-grade industrial control and networking equipment |
| I/O interface | TTL-compatible inputs/outputs, eliminating level-shifter requirements when interfacing with legacy logic |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (Small Outline J-lead), surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no external address latching needed |
| I/O1–I/O8 | Lower byte bidirectional data | 8-bit data path enabled only when LB# = L; isolated from upper byte during partial writes |
| I/O9–I/O16 | Upper byte bidirectional data | 8-bit data path enabled only when UB# = L; supports independent 8-bit transfers |
| CS# | Chip select | Active-low global enable; must be stable before address or byte-select transitions to avoid bus contention |
| OE# | Output enable | Controls output drivers only; does not affect internal state or power consumption |
| WE# | Write enable | Active-low write strobe; combined with CS# and LB#/UB# to define write boundaries per AC timing table |
| UB#, LB# | Byte select | Independent upper/lower byte gating - enables 8-bit granularity without data bus splitting |
| VCC, VSS | Power/ground | Center-placed VCC/VSS pins minimize IR drop and improve noise immunity in high-speed operation |
| NC | No connection | Unbonded die pads; must remain unconnected on PCB to prevent parasitic coupling |
Key Features
| Feature | Design Value |
|---|---|
| Single 3.3V supply operation | Eliminates dual-rail power design complexity and reduces BOM count in space-constrained modules |
| 12ns read/write cycle time | Supports burst-mode data streaming at up to 83 MB/s effective bandwidth with no wait-state insertion |
| L-version low-power standby | 0.8mA max ICCDR enables >1-year data retention on coin-cell batteries in metering and logging applications |
| Byte-selectable 16-bit I/O | Reduces external glue logic and PCB routing layers by enabling partial-word access without multiplexers |
| Center VCC/VSS pinout | Improves signal integrity and reduces ground bounce in high-frequency address/data transitions |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time acquisition and temporary storage of sensor data streams in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as cyclic buffer between ADC interface and CPU bus, synchronized to fixed 10ms scan intervals. Use Value: 12ns access ensures zero-wait-state CPU reads during peak 100 kHz sampling bursts, while L-version standby current extends backup runtime during mains failure. | Use Scenario: Temporary frame storage in portable ultrasound devices where image buffers must survive brief power interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding raw echo data during probe movement; retains content at 2.0V during battery switchover. Use Value: 0.4mA max data retention current allows >48-hour hold time on CR2032, eliminating need for supercapacitor backup circuitry. |
| Networking Packet Buffer | Automotive ADAS Pre-Trigger Memory |
Use Scenario: Line-rate packet buffering in Gigabit Ethernet switches handling variable-length frames under bursty traffic loads. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as FIFO buffer between MAC and PHY layers, accessed via separate read/write address counters. Use Value: Byte-select capability enables efficient handling of misaligned IP headers without full-word read-modify-write cycles. | Use Scenario: Pre-trigger capture memory in automotive camera ECU, storing 2 seconds of rolling video prior to event detection. IC Role / Device Role / Timing Role: High-reliability SRAM retaining pre-event frames during continuous overwrite, powered from vehicle battery with L-version low leakage. Use Value: Center VCC/VSS layout minimizes switching noise coupling into analog sensor paths, preserving image SNR during simultaneous capture and processing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 12ns access, 3.3V, SOJ-44, but lacks L-version low-power retention mode (standby 5mA vs. 0.8mA) | Suitable for main system memory where continuous power is guaranteed; not viable for battery backup | Select when cost sensitivity outweighs retention requirement and board-level power budget permits higher standby draw |
| AS6C4008-12ZIN | 12ns access, 3.3V, TSOPII-44 package only; no SOJ option; retention voltage not specified below 2.7V | Requires PCB redesign for TSOPII footprint; unsuitable for legacy SOJ-based designs or low-VCC hold scenarios | Choose only if TSOPII is already standardized in platform and retention below 2.7V is unnecessary |
Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RW0416DGE-2LR#B1 uniquely delivers verified 2.0V data retention with sub-1mA standby, making it the sole option among these three for true battery-backed SRAM implementations without supplemental power management ICs.
Availability
R1RW0416DGE-2LR#B1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and automotive ADAS pre-trigger memory requiring stable component supply and long-term lifecycle support.
Supply support for R1RW0416DGE-2LR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0416D Series was developed to deliver high-speed, low-power SRAM for embedded systems needing deterministic timing, battery-backed operation, and robust SOJ packaging - targeting applications where reliability under voltage stress and thermal variation is critical.
FAQ
What is the maximum guaranteed access time for R1RW0416DGE-2LR#B1?
The R1RW0416DGE-2LR#B1 has a maximum guaranteed access time of 12 ns under standard operating conditions (Ta = 0°C to +70°C, VCC = 3.3 V ±0.3 V). This value is specified in the AC Characteristics table of the official Renesas datasheet R10DS0282EJ0100 Rev.1.00 and applies to both read and write cycle timing parameters including tAA and tACS.
Does R1RW0416DGE-2LR#B1 support true data retention during power loss?
Yes, the R1RW0416DGE-2LR#B1 supports guaranteed data retention down to 2.0 V (min) with a maximum current draw of 0.4 mA, specifically validated for the L-version. This capability is documented in the Low VCC Data Retention Characteristics section (Page 12) of the R10DS0282EJ0100 datasheet and enables reliable hold-mode operation during brown-out or battery switchover events.
What package type is used for R1RW0416DGE-2LR#B1?
The R1RW0416DGE-2LR#B1 uses a 400-mil 44-pin plastic SOJ (Small Outline J-lead) package, as confirmed in the Ordering Information table on Page 1 of the R10DS0282EJ0100 datasheet. This surface-mount package features gull-wing leads and is compatible with standard reflow soldering processes.
How does the L-version designation affect power consumption in R1RW0416DGE-2LR#B1?
The L-version designation in R1RW0416DGE-2LR#B1 specifies optimized low-power operation: CMOS standby current is limited to 0.8 mA (max), and data retention current is capped at 0.4 mA (max), both significantly lower than the standard version's 5 mA and 40 mA limits. These values are explicitly guaranteed only for L-version parts per the DC Characteristics table (Page 5).
Can R1RW0416DGE-2LR#B1 perform independent 8-bit reads and writes?
Yes, the R1RW0416DGE-2LR#B1 supports independent upper and lower byte operations using dedicated UB# and LB# control signals. When only LB# is asserted, I/O1–I/O8 are active while I/O9–I/O16 remain high-Z; similarly, asserting only UB# activates I/O9–I/O16. This functionality is defined in the Operation Table (Page 4) and timing waveforms (Pages 8–11) of the datasheet.
R1RW0416DGE-2LR#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RW0416DGE-2LR#B1 FAQ
1.How can I place an order for R1RW0416DGE-2LR#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DGE-2LR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DGE-2LR#B1 reliable?
The price and inventory of R1RW0416DGE-2LR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DGE-2LR#B1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DGE-2LR#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DGE-2LR#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DGE-2LR#B1?
R1RW0416DGE-2LR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DGE-2LR#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DGE-2LR#B1?
For technical support, including R1RW0416DGE-2LR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DGE-2LR#B1 requirements.
6.How does Aetrix verify that R1RW0416DGE-2LR#B1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DGE-2LR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DGE-2LR#B1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DGE-2LR#B1?
All R1RW0416DGE-2LR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DGE-2LR#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DGE-2LR#B1 part is unused and in its original packaging.
Return procedure for R1RW0416DGE-2LR#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DGE-2LR#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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