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Renesas R1RW0416DGE-2PI#B0
- Part No.:
- R1RW0416DGE-2PI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DGE-2PI#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,850
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Product details
Overview
R1RW0416DGE-2PI#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply with 12 ns maximum access time, 130 mA max operating current, and −40 to +85°C industrial temperature range - deployed in cache and buffer memory subsystems for real-time embedded controllers and communication baseband processors.
For engineers reviewing the R1RW0416DGE-2PI#B0 datasheet, R1RW0416DGE-2PI#B0 pinout, R1RW0416DGE-2PI#B0 application, or R1RW0416DGE-2PI#B0 equivalent, this page delivers verified timing parameters, byte-select SRAM interface behavior, SOJ-44 package layout, and direct alternatives for industrial-grade memory replacement in space-constrained PCB designs.
Technical Context
The R1RW0416DGE-2PI#B0 implements a fully static 6-transistor memory cell architecture with no clock or refresh required. It supports independent upper- and lower-byte write/read via UB# and LB# control lines, and features center VCC/VSS pinout for improved power distribution and signal integrity in high-density layouts.
Its TTL-compatible I/O interface ensures seamless integration with legacy microcontrollers and FPGAs, while dual standby current modes (40 mA TTL / 5 mA CMOS) enable dynamic power optimization based on system sleep state requirements - all within a fixed 44-pin plastic SOJ (44P0K) surface-mount package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - supports 16-bit data bus systems without external multiplexing |
| Access time | 12 ns max - enables operation with 83 MHz synchronous bus interfaces (e.g., SH-4, MPC8xx) |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard LVTTL and LVCMOS I/O domains |
| Operating current | 130 mA max at min cycle - defines thermal budget for multi-SRAM memory banks |
| Standby current | 5 mA CMOS mode - allows low-power retention during processor idle states |
| Temperature range | −40°C to +85°C - qualified for industrial control, telecom line cards, and transportation electronics |
| Package | 400-mil 44-pin plastic SOJ (44P0K) - surface-mount compatible with standard reflow profiles |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (44P0K), center VCC/VSS configuration, JEDEC-standard footprint for automated placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no internal address latching |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus; high-impedance when CS#, OE#, LB#, or UB# inactive |
| CS# | Chip select | Active-low global enable; device enters standby when high, output disabled when high with OE# low |
| OE# | Output enable | Active-low read control; output valid only when CS# and OE# both low; no effect during write |
| WE# | Write enable | Active-low write strobe; initiates write cycle when CS# and WE# both low, regardless of OE# state |
| UB# / LB# | Upper/lower byte select | Independent 8-bit write masking; UB# controls I/O9–I/O16, LB# controls I/O1–I/O8 |
| VCC / VSS | Power / ground | Center-placed dual VCC and dual VSS pins reduce IR drop and improve noise immunity |
| NC | No connection | Unbonded pad; must remain unconnected per design - not usable as spare I/O or tie-off |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks, no refresh cycles - simplifies timing-critical control logic and eliminates hidden latency |
| Byte-select write capability | Independent UB#/LB# control enables partial-word writes without read-modify-write overhead |
| TTL-compatible I/O | Direct interface with 3.3 V microcontrollers and FPGAs - no level-shifting circuitry required |
| Dual standby current modes | 40 mA (TTL) and 5 mA (CMOS) options allow trade-off between wake-up speed and ultra-low-power hold |
| Industrial temperature grade | −40°C to +85°C operation validated across full voltage and timing spec - suitable for uncontrolled environments |
Applications
| Industrial PLC Data Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Real-time I/O scanning and cyclic process data buffering in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed 16-bit parallel SRAM serving as dual-port-accessible scratchpad memory for CPU and DMA engine. Use Value: 12 ns access time ensures sub-µs response to interrupt-driven I/O updates, eliminating pipeline stalls during fieldbus polling. |
Use Scenario: Packet header caching and temporary frame storage in TDM-over-IP gateway line cards handling E1/T1 aggregation. IC Role / Device Role / Timing Role: Low-latency buffer memory interfacing directly with TI TMS320C64x+ DSP and FPGA packet engines. Use Value: Byte-select write capability reduces memory bandwidth consumption by 50% during partial-header updates versus full-word writes. |
| Avionics Display Controller Framestore | Railway Signaling Safety Logic Memory |
|
Use Scenario: Non-volatile frame buffer extension in DO-254-compliant display management units requiring deterministic pixel update timing. IC Role / Device Role / Timing Role: Static RAM used as secondary framestore synchronized to video controller's pixel clock domain. Use Value: Center VCC/VSS pinout minimizes simultaneous switching noise during burst pixel writes, preserving signal integrity on high-resolution LVDS links. |
Use Scenario: Configuration and status storage in SIL-2-certified railway interlocking logic modules operating in harsh rail-side cabinets. IC Role / Device Role / Timing Role: Radiation-tolerant (non-hardened but industrial-grade) SRAM holding safety-critical state variables between watchdog resets. Use Value: −40°C to +85°C rating and 5 mA CMOS standby current ensure reliable operation during extended cold-soak and summer thermal cycling without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-12ZSXI | 4 Mbit × 16-bit, 12 ns access, 3.3 V, SOJ-44 - identical timing and pinout; higher ICC (150 mA) and ISB (10 µA) | Lower standby current enables longer battery-backed operation; same industrial temp range | Select when ultra-low standby power (<10 µA) is prioritized over marginal operating current increase |
| IS61LV25616AL-12MLI | 4 Mbit × 16-bit, 12 ns access, 3.3 V, TSOP-II-44 - same timing, different package (TSOPII vs SOJ); 120 mA ICC | TSOPII offers better thermal dissipation and smaller footprint than SOJ; requires PCB land pattern change | Select when board-level thermal management or component height constraints favor TSOP-II packaging |
Compared with R1RW0416DGE-2PI#B0, CY62167EV30LL-12ZSXI provides significantly lower standby current for battery-harvesting systems, while IS61LV25616AL-12MLI offers superior thermal performance in compact enclosures - neither is pin-compatible due to differing package types or internal timing margins.
Availability
R1RW0416DGE-2PI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom line card caching, and avionics display controller framestores requiring stable component supply across extended product lifecycles.
Supply support for R1RW0416DGE-2PI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0416DI Series was designed specifically for high-reliability, wide-temperature parallel SRAM applications in real-time embedded systems where deterministic timing and long-term supply stability are critical - not intended for consumer or commodity memory use.
FAQ
What is the maximum operating frequency supported by the R1RW0416DGE-2PI#B0?
The R1RW0416DGE-2PI#B0 does not operate on a clock signal - it is a fully static RAM. Its 12 ns access time supports bus interfaces with effective cycle rates up to 83 MHz (1/12 ns), provided setup/hold timing is met. The R1RW0416DGE-2PI#B0 requires no clock input and functions synchronously with external address and control strobes only.
Does the R1RW0416DGE-2PI#B0 support true dual-port operation?
No, the R1RW0416DGE-2PI#B0 is a single-port SRAM with one shared address/data/control bus. It does not support concurrent read and write operations on separate ports. The R1RW0416DGE-2PI#B0 uses standard CS#/OE#/WE# control logic and lacks arbitration or dual-clock domains required for true dual-port functionality.
Can the R1RW0416DGE-2PI#B0 be used with a 2.5 V supply?
No - the R1RW0416DGE-2PI#B0 is specified exclusively for 3.3 V ± 0.3 V operation (3.0 V to 3.6 V). Operation below 3.0 V violates the Recommended DC Operating Conditions and may result in timing violations, data corruption, or failure to meet 12 ns access guarantee. The R1RW0416DGE-2PI#B0 has no 2.5 V variant in the DI series.
What is the meaning of "center VCC and VSS type pin out" for the R1RW0416DGE-2PI#B0?
"Center VCC and VSS type pin out" means the R1RW0416DGE-2PI#B0 places two VCC and two VSS pins symmetrically near the center of each long side of the 44-pin SOJ package - improving power delivery uniformity and reducing simultaneous switching noise. This layout differs from corner-fed packages and is documented in the Pin Arrangement diagram on page 2 of the R1RW0416DI Series datasheet.
Is the R1RW0416DGE-2PI#B0 RoHS compliant?
Yes - the R1RW0416DGE-2PI#B0 is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas Electronics' material declarations and packaging markings. The "#B0" suffix denotes lead-free (Pb-free) finish and halogen-free molding compound, consistent with Renesas' environmental compliance program detailed on their website and in the product's ordering information table.
R1RW0416DGE-2PI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RW0416DGE-2PI#B0 FAQ
1.How can I place an order for R1RW0416DGE-2PI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DGE-2PI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DGE-2PI#B0 reliable?
The price and inventory of R1RW0416DGE-2PI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DGE-2PI#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0416DGE-2PI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DGE-2PI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DGE-2PI#B0?
R1RW0416DGE-2PI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DGE-2PI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DGE-2PI#B0?
For technical support, including R1RW0416DGE-2PI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DGE-2PI#B0 requirements.
6.How does Aetrix verify that R1RW0416DGE-2PI#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DGE-2PI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DGE-2PI#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0416DGE-2PI#B0?
All R1RW0416DGE-2PI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DGE-2PI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DGE-2PI#B0 part is unused and in its original packaging.
Return procedure for R1RW0416DGE-2PI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DGE-2PI#B0 Tags
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