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Renesas R1RW0416DGE-2PI#B1
- Part No.:
- R1RW0416DGE-2PI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DGE-2PI#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:108
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Product details
Overview
R1RW0416DGE-2PI#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 12ns max access time and −40°C to +85°C industrial temperature range. It serves as cache or buffer memory in embedded control systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RW0416DGE-2PI#B1 datasheet, R1RW0416DGE-2PI#B1 pinout, R1RW0416DGE-2PI#B1 application, or R1RW0416DGE-2PI#B1 equivalent, key selection factors include byte-selectable I/O architecture, TTL-compatible signaling, low 5mA CMOS standby current, and 44-pin SOJ package compatibility with high-density surface-mount layouts.
Technical Context
The R1RW0416DGE-2PI#B1 implements a fully static 6-transistor memory cell array with no clock or refresh required. Its control logic supports independent upper/lower byte write and read operations via UB# and LB# pins, enabling partial-word transfers without bus contention.
It features center VCC/VSS pinout for reduced noise coupling and operates with equal access and cycle times (12ns), ensuring predictable timing in synchronous bus interfaces. All inputs and outputs are directly TTL-compatible, eliminating level-shifting requirements in mixed-voltage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - supports 16-bit parallel data path for efficient CPU or DSP interfacing |
| Access time | 12 ns max - guarantees deterministic read latency in real-time control loops |
| Supply voltage | 3.3 V ±0.3 V - compatible with standard LVTTL and 3.3V logic families |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade embedded applications |
| Standby current | 5 mA max (CMOS) - enables low-power hold mode during system sleep states |
| Package | 400-mil 44-pin plastic SOJ - surface-mount compatible with automated assembly and thermal reliability |
| I/O interface | UB#/LB# byte-select control - allows independent 8-bit writes to upper or lower data lanes |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (Small Outline J-lead) with center VCC/VSS configuration for balanced power distribution and noise reduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing |
| I/O1–I/O16 | Data input/output | 16-bit bidirectional data bus with high-impedance tri-state control |
| CS# | Chip select | Active-low enable for device selection in multi-chip memory subsystems |
| OE# | Output enable | Active-low control for output driver activation during read cycles |
| WE# | Write enable | Active-low signal initiating write operation when CS# is asserted |
| UB# | Upper byte select | Active-low control enabling I/O9–I/O16 for 8-bit upper-byte access |
| LB# | Lower byte select | Active-low control enabling I/O1–I/O8 for 8-bit lower-byte access |
| VCC | Power supply | Primary 3.3V supply pin (center-located for low-inductance decoupling) |
| VSS | Ground | Reference ground pin (center-located adjacent to VCC) |
| NC | No connection | Unbonded pin; must remain unconnected per design |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, timing strobe, or refresh required - simplifies timing-critical controller designs |
| Byte-selectable I/O | Independent UB# and LB# control enables partial-word writes without data bus masking logic |
| TTL-compatible I/O | All inputs and outputs meet TTL voltage thresholds - eliminates external level shifters in 3.3V/5V mixed systems |
| Low-power standby modes | 5 mA max CMOS standby current - reduces system-level power consumption during idle periods |
| Industrial temperature range | −40°C to +85°C operation - validated for deployment in harsh environmental conditions |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit Cache |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: High-speed SRAM acting as dual-port-accessible scratchpad memory for fast register shadowing and status logging. Use Value: 12ns access time ensures sub-microsecond response to fieldbus interrupts, while byte-select capability minimizes bus turnaround overhead. | Use Scenario: Temporary storage of sensor fusion results and actuator command queues in engine management systems. IC Role / Device Role / Timing Role: Non-refreshing cache memory interfaced directly to 16-bit microcontroller data bus for zero-latency instruction/data fetch. Use Value: −40°C to +85°C rating and 5mA CMOS standby current support extended runtime in under-hood environments with intermittent power. |
| Medical Imaging Data Pipeline | Avionics Display Frame Buffer |
Use Scenario: Line-buffer storage in ultrasound or X-ray image preprocessing pipelines requiring burst-mode pixel transfer. IC Role / Device Role / Timing Role: Parallel 16-bit SRAM providing synchronized write-read handoff between ADC sampling and FPGA-based filtering stages. Use Value: Equal 12ns access and cycle times guarantee jitter-free throughput at 83 MHz effective bandwidth, matching high-speed serial link framing rates. | Use Scenario: Dedicated frame buffer for cockpit display controllers rendering safety-critical symbology with guaranteed update latency. IC Role / Device Role / Timing Role: Static memory holding rendered bitmap frames accessible by graphics controller without DRAM refresh interference. Use Value: Center VCC/VSS pinout reduces switching noise on analog video output lines, preserving signal integrity in EMI-sensitive avionics bays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 12ns access, 3.3V, 44-pin TSOP-II - same speed but different package footprint and pinout | Requires PCB layout revision due to TSOP-II vs. SOJ mechanical form factor | Select when board space constraints favor thinner profile over lead pitch compatibility |
| AS6C4008-12ZIN | 12ns access, 3.3V, 44-pin SOJ - identical package but higher 150mA active current and no byte-select feature | Lacks UB#/LB# control, limiting partial-word write efficiency in mixed-data-width systems | Choose only if byte-select functionality is unused and higher active power is acceptable |
Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RW0416DGE-2PI#B1 uniquely combines 44-pin SOJ compatibility, true byte-select control, and 5mA CMOS standby current-making it optimal for space-constrained industrial controllers needing low-power partial-word memory access.
Availability
R1RW0416DGE-2PI#B1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive engine control unit cache, and medical imaging data pipelines requiring stable component supply across extended product lifecycles.
Supply support for R1RW0416DGE-2PI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1RW0416DI Series was designed specifically for high-reliability embedded systems demanding wide-temperature SRAM with byte-select flexibility and low-power standby operation.
FAQ
What is the maximum operating frequency supported by the R1RW0416DGE-2PI#B1?
The R1RW0416DGE-2PI#B1 does not operate on a clock signal-it is a fully static RAM. Its performance is defined by access and cycle times: 12ns maximum for both. This corresponds to an effective maximum bus frequency of approximately 83 MHz when used in continuous read/write sequences with no wait states. The R1RW0416DGE-2PI#B1 achieves this without clocks, timing strobes, or refresh cycles.
Does the R1RW0416DGE-2PI#B1 support independent 8-bit reads and writes?
Yes, the R1RW0416DGE-2PI#B1 supports independent 8-bit operations using dedicated UB# (upper byte) and LB# (lower byte) control pins. When LB# is low and UB# is high, only I/O1–I/O8 are active; when UB# is low and LB# is high, only I/O9–I/O16 respond. This enables true byte-select functionality without external gating logic, a capability confirmed in the Operation Table and AC Characteristics of the R1RW0416DGE-2PI#B1 datasheet.
What is the difference between TTL standby current and CMOS standby current for the R1RW0416DGE-2PI#B1?
The R1RW0416DGE-2PI#B1 specifies two standby current modes: TTL standby current (40mA max) applies when CS# is high and all control inputs are at valid TTL logic levels (VIH/VIL); CMOS standby current (5mA max) applies under deeper sleep conditions where CS# ≥ VCC − 0.2V and input voltages are near rail extremes (0V or VCC). This dual-mode specification reflects actual leakage behavior under distinct system power-management states in the R1RW0416DGE-2PI#B1.
Is the R1RW0416DGE-2PI#B1 pin-compatible with other devices in the R1RW0416DI Series?
Yes, all R1RW0416DI Series variants-including R1RW0416DGE-2PI#B1, R1RW0416DSB-0PI, and R1RW0416DSB-2PI-share identical 44-pin SOJ and TSOPII pinouts and signal definitions. Differences are limited to access time (10ns vs. 12ns) and package type; the R1RW0416DGE-2PI#B1 uses the 400-mil 44-pin plastic SOJ package with 12ns timing, maintaining full electrical and mechanical compatibility within the family.
What are the absolute maximum ratings for supply voltage on the R1RW0416DGE-2PI#B1?
The R1RW0416DGE-2PI#B1 has an absolute maximum supply voltage rating of −0.5 V to +4.6 V relative to VSS. Exceeding this range risks permanent damage. For reliable operation, the recommended DC supply is strictly 3.0 V to 3.6 V (3.3 V ±0.3 V). This specification is explicitly defined in the Absolute Maximum Ratings table of the R1RW0416DGE-2PI#B1 datasheet and applies regardless of temperature or duty cycle.
R1RW0416DGE-2PI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RW0416DGE-2PI#B1 FAQ
1.How can I place an order for R1RW0416DGE-2PI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DGE-2PI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DGE-2PI#B1 reliable?
The price and inventory of R1RW0416DGE-2PI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DGE-2PI#B1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DGE-2PI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DGE-2PI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DGE-2PI#B1?
R1RW0416DGE-2PI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DGE-2PI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DGE-2PI#B1?
For technical support, including R1RW0416DGE-2PI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DGE-2PI#B1 requirements.
6.How does Aetrix verify that R1RW0416DGE-2PI#B1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DGE-2PI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DGE-2PI#B1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DGE-2PI#B1?
All R1RW0416DGE-2PI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DGE-2PI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DGE-2PI#B1 part is unused and in its original packaging.
Return procedure for R1RW0416DGE-2PI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DGE-2PI#B1 Tags
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