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Renesas R1RW0416DGE-2PR#B0
- Part No.:
- R1RW0416DGE-2PR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DGE-2PR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,749
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Product details
Overview
R1RW0416DGE-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply, with 12 ns maximum access time and TTL-compatible I/O, designed for cache and buffer memory in embedded computing and industrial control systems.
For engineers reviewing the R1RW0416DGE-2PR#B0 datasheet, R1RW0416DGE-2PR#B0 pinout, R1RW0416DGE-2PR#B0 application, or R1RW0416DGE-2PR#B0 equivalent, key selection considerations include byte-selectable 16-bit data width, 44-pin SOJ package compatibility, low-power standby modes (5 mA max), and guaranteed data retention down to 2.0 V - critical for battery-backed memory subsystems.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its dual-byte enable (UB#/LB#) supports independent 8-bit writes without external logic, and center VCC/VSS pinout optimizes power distribution and signal integrity on dense PCB layouts.
The device supports three distinct operational states: active read/write (max 130 mA ICC), TTL standby (40 mA ISB), and ultra-low-power CMOS standby (5 mA ISB1). Data retention mode activates at VCC ≥ 2.0 V with ≤0.8 mA current draw - confirmed only for L- and S-versions per datasheet revision 2.00.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - enables compact 16-bit-wide memory buffers without data bus multiplexing |
| Access time | 12 ns max - meets timing requirements for 83 MHz bus interfaces with setup/hold margin |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard LVCMOS-3.3 logic families and eliminates level-shifting needs |
| Operating current | 130 mA max - defines thermal budget for continuous burst reads in real-time control applications |
| Standby current | 5 mA max (CMOS mode) - supports >100-hour battery backup in maintenance-free industrial logging systems |
| Data retention voltage | 2.0 V min - ensures nonvolatile data hold during brown-out events or controlled power-down sequences |
| Package | 400-mil 44-pin plastic SOJ (44P0K) - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns |
Pinout & Package
400-mil 44-pin plastic SOJ (44P0K) package with center VCC/VSS configuration for balanced power delivery and reduced ground bounce.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; A0 = LSB, A17 = MSB |
| I/O1–I/O8 | Lower byte data I/O | Bi-directional 8-bit data path enabled by LB#; electrically isolated from upper byte when UB# = VIH |
| I/O9–I/O16 | Upper byte data I/O | Bi-directional 8-bit data path enabled by UB#; operates independently of lower byte for partial-word writes |
| CS# | Chip select | Active-low global enable; device enters standby (ISB1) when high, enabling system-level power gating |
| OE# | Output enable | Active-low read control; output drivers enter high-Z when deasserted, allowing bus sharing |
| WE# | Write enable | Active-low write strobe; initiates write cycle only when CS#, LB#, or UB# are concurrently asserted |
| UB# / LB# | Byte select | Independent active-low controls for upper/lower 8-bit lanes; enables true byte-write capability without masking logic |
| VCC / VSS | Power / Ground | Center-placed dual VCC/VSS pair minimizes IR drop and improves noise immunity across wide data bus |
| NC | No connection | Pin 23 is unconnected; must remain floating - no pull-up/down or routing required |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks, no refresh cycles - simplifies timing design and eliminates hidden refresh latency in deterministic real-time systems |
| Byte-selectable 16-bit interface | Independent UB#/LB# controls allow simultaneous or staggered 8-bit writes - reduces FPGA/CPLD glue logic count by up to 40% |
| Low-voltage data retention | Guaranteed operation down to 2.0 V with ≤0.8 mA current - enables seamless transition to battery backup without external supervisors |
| TTL-compatible I/O | All inputs accept 0.8 V/2.0 V thresholds; outputs drive ±4 mA/±8 mA - interoperable with legacy 3.3 V microcontrollers and FPGAs |
| Center VCC/VSS pinout | Power/ground pins placed centrally (pins 10/11 and 33/34) - lowers inductance, improves decoupling efficiency, and reduces simultaneous switching noise |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Storing real-time sensor acquisition buffers in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: High-speed 16-bit parallel buffer providing zero-wait-state access for cyclic data logging at 10 kHz sample rates. Use Value: 12 ns access time ensures full word reads complete within one 83 MHz bus clock cycle, eliminating pipeline stalls in motion-control loops. |
Use Scenario: Temporary frame storage in portable ultrasound devices where power efficiency and data integrity during battery switchover are critical. IC Role / Device Role / Timing Role: Battery-backed SRAM holding acquired image frames during host processor sleep or firmware update windows. Use Value: 2.0 V data retention threshold and 0.8 mA standby current enable >72-hour data hold on coin-cell backup without external regulators. |
| Avionics Display Cache | Test Equipment Pattern Memory |
|
Use Scenario: Caching graphics primitives and font glyphs in ruggedized cockpit display units subject to extended temperature range (-40°C to +85°C). IC Role / Device Role / Timing Role: Non-refreshing display memory interfacing directly to ASIC video controllers via 16-bit parallel bus. Use Value: Center VCC/VSS layout and 44-pin SOJ package provide mechanical robustness and EMI resilience in high-vibration environments. |
Use Scenario: Storing stimulus/response vectors in automated test equipment requiring precise timing alignment between pattern generation and capture. IC Role / Device Role / Timing Role: Deterministic-latency memory block synchronized to 100 MHz ATE clock with sub-nanosecond jitter tolerance. Use Value: Equal access and cycle times (12 ns) guarantee predictable timing margins for both read and write operations in closed-loop test sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4 Mbit × 16-bit, 45 ns access, 5 V tolerant, TSOP-II package | Slower timing; requires level translation for 3.3 V systems; wider 5 V supply range | Select when legacy 5 V infrastructure or longer timing margins are acceptable |
| AS6C4008-12ZIN | 4 Mbit × 16-bit, 12 ns access, 3.3 V only, 44-pin SOJ, 10 mA ISB1 | Nearly identical timing and package; slightly higher standby current than R1RW0416DGE-2PR#B0's 5 mA ISB1 | Preferred for new designs needing second-source availability with minimal redesign effort |
Compared with CY62167EV30LL-45ZSXI, R1RW0416DGE-2PR#B0 delivers 3.7× faster access for real-time buffering; versus AS6C4008-12ZIN, it offers 40% lower CMOS standby current - extending battery life in always-on edge nodes.
Availability
R1RW0416DGE-2PR#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, avionics display caching, and automated test equipment pattern memory requiring stable component supply across multi-year production cycles.
Supply support for R1RW0416DGE-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0416D Series was developed for high-reliability embedded systems requiring fast, low-power, byte-selectable parallel SRAM - particularly in battery-backed and real-time deterministic applications.
FAQ
What is the maximum operating temperature range for the R1RW0416DGE-2PR#B0?
The R1RW0416DGE-2PR#B0 is rated for operation from 0°C to +70°C per its DC characteristics table. This commercial-grade temperature range aligns with Renesas' "Standard" quality classification, making it suitable for office equipment, industrial robots, and communications gear - but not for automotive or aerospace applications without additional qualification.
Does the R1RW0416DGE-2PR#B0 support true independent byte writes?
Yes, the R1RW0416DGE-2PR#B0 supports true independent byte writes via separate UB# and LB# control signals. When LB# is asserted low and UB# remains high, only I/O1–I/O8 are active; conversely, asserting UB# low while holding LB# high enables writes to I/O9–I/O16 alone - eliminating need for external byte-mask logic.
What is the minimum VCC required to retain data in the R1RW0416DGE-2PR#B0?
The R1RW0416DGE-2PR#B0 guarantees data retention down to 2.0 V, as specified in the Low VCC Data Retention Characteristics table. This applies only to L- and S-versions - and the -2PR suffix confirms this part belongs to the S-version family, ensuring ≤0.5 mA retention current at 2.0 V.
Is the R1RW0416DGE-2PR#B0 pin-compatible with other members of the R1RW0416D series?
Yes, all R1RW0416D-series variants - including R1RW0416DGE-0PR, R1RW0416DGE-2LR, and R1RW0416DSB-2SR - share identical 44-pin SOJ pinouts and signal definitions. The -2PR#B0 differs only in access speed (12 ns) and version grade (S-version), not physical or logical connectivity.
How does the center VCC/VSS pin arrangement benefit PCB layout for the R1RW0416DGE-2PR#B0?
The center-placed VCC (pin 10) and VSS (pin 11) on one side, plus VCC (pin 33) and VSS (pin 34) on the opposite side, reduce power loop inductance and improve decoupling effectiveness. This layout minimizes ground bounce on the 16-bit I/O bus and enhances signal integrity in high-speed parallel memory interfaces.
R1RW0416DGE-2PR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RW0416DGE-2PR#B0 FAQ
1.How can I place an order for R1RW0416DGE-2PR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DGE-2PR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DGE-2PR#B0 reliable?
The price and inventory of R1RW0416DGE-2PR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DGE-2PR#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0416DGE-2PR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DGE-2PR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DGE-2PR#B0?
R1RW0416DGE-2PR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DGE-2PR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DGE-2PR#B0?
For technical support, including R1RW0416DGE-2PR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DGE-2PR#B0 requirements.
6.How does Aetrix verify that R1RW0416DGE-2PR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DGE-2PR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DGE-2PR#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0416DGE-2PR#B0?
All R1RW0416DGE-2PR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DGE-2PR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DGE-2PR#B0 part is unused and in its original packaging.
Return procedure for R1RW0416DGE-2PR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DGE-2PR#B0 Tags
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AT24C02C-XHM-T
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