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Renesas R1RW0416DGE-2PR#B1
- Part No.:
- R1RW0416DGE-2PR#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DGE-2PR#B1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,498
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Product details
Overview
R1RW0416DGE-2PR#B1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply, with 12 ns maximum access time and TTL-compatible I/O. It features center VCC/VSS pinout, low-power standby modes (40 mA TTL / 5 mA CMOS), and supports byte-selectable read/write operations for cache and buffer applications in embedded systems.
For engineers reviewing the R1RW0416DGE-2PR#B1 datasheet, R1RW0416DGE-2PR#B1 pinout, R1RW0416DGE-2PR#B1 application, or R1RW0416DGE-2PR#B1 equivalent, this page delivers verified specifications, package mapping, functional pin roles, real-world use cases, and validated alternative parts - all grounded in Renesas' official R10DS0282EJ0100 Rev.1.00 documentation.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with no clock or timing strobe required. Its dual-byte enable (UB#/LB#) and direct TTL compatibility allow seamless integration into legacy and mixed-voltage memory subsystems without level-shifting.
The device supports independent upper- and lower-byte read/write cycles, equal access and cycle times (12 ns), and data retention down to 2.0 V with ≤400 µA current - confirmed for L-version operation per datasheet Section 12.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory organization | 256-kword × 16-bit (4 Mbit total); enables wide-data-path buffering without external data-width expansion |
| Access time (max) | 12 ns; guarantees deterministic read latency for real-time control loops and CPU cache interfaces |
| Supply voltage | 3.3 V ± 0.3 V; compatible with standard 3.3 V logic rails and eliminates need for auxiliary regulators |
| Standby current | 5 mA (CMOS mode); supports low-power sleep states in battery-backed systems |
| Data retention voltage | 2.0 V (min); maintains stored data during brown-out or backup-battery operation |
| Operating temperature | 0 °C to +70 °C; qualified for commercial-grade industrial control and networking equipment |
| Input/output capacitance | ≤8 pF (CI/O); minimizes signal integrity impact on high-speed bus traces |
Pinout & Package
Package: 400-mil 44-pin plastic SOJ (Small Outline J-Lead), surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no external address latching required |
| I/O1–I/O16 | Data input/output | Bidirectional 16-bit data bus; supports simultaneous 16-bit transfers or byte-selectable access via LB#/UB# |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address or control transitions |
| OE# | Output enable | Active-low control for output drivers; allows shared bus operation with tri-state isolation |
| WE# | Write enable | Active-low write strobe; initiates write cycles when asserted with CS# and LB#/UB# |
| UB#, LB# | Upper/lower byte select | Independent active-low controls enabling 8-bit granularity writes/reads without masking logic |
| VCC, VSS | Power supply / Ground | Center-placed VCC/VSS pins reduce power distribution inductance and improve noise immunity |
| NC | No connection | Unbonded pin; must remain unconnected per design - no pull-up/down or routing allowed |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks, refresh cycles, or timing strobes needed - simplifies controller interface and reduces system jitter |
| Byte-selectable I/O | UB#/LB# pins enable independent 8-bit access to upper/lower data bytes, eliminating software masking overhead |
| TTL-compatible signaling | All inputs accept 0.8 V/2.0 V thresholds and outputs drive −4 mA/8 mA loads - interoperable with 5 V-tolerant 3.3 V logic |
| Low-power retention mode | Draws ≤400 µA at VCC = 2.0 V (L-version), enabling reliable data hold during extended power-loss events |
| Equal tRC and tAA | 12 ns read cycle time matches access time - eliminates pipeline stalls in burst-access memory controllers |
Applications
| Industrial PLC Memory Buffer | Network Packet Buffer |
|---|---|
Use Scenario: Storing transient process I/O data and instruction buffers in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed, non-refreshing SRAM serving as dual-port-accessible scratchpad memory for real-time firmware execution. Use Value: 12 ns access ensures sub-microsecond response to fieldbus interrupts; byte-select capability aligns with Modbus RTU register boundaries. |
Use Scenario: Temporarily holding Ethernet frame payloads in Layer 2 switches prior to forwarding or filtering decisions. IC Role / Device Role / Timing Role: Wide-bit-width (16-bit) buffer memory interfacing directly with MAC-layer DMA engines. Use Value: 256-kword depth supports ≥4 KB packet buffering; TTL compatibility avoids level shifters on legacy PHY buses. |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Cache |
Use Scenario: Capturing and staging raw sensor frames from ultrasound transducer arrays before DSP-based beamforming. IC Role / Device Role / Timing Role: Low-latency, low-power SRAM acting as first-stage frame buffer between ADC interface and FPGA processing pipeline. Use Value: Center VCC/VSS layout reduces switching noise coupling into analog front-end; 5 mA standby current extends battery runtime in portable units. |
Use Scenario: Caching radar point-cloud metadata in forward-collision warning modules where ECU power cycling occurs frequently. IC Role / Device Role / Timing Role: Retention-capable SRAM preserving critical calibration and state data during ignition-off periods. Use Value: Guaranteed 2.0 V data retention enables safe operation during 12 V battery sag; 400 µA retention current prevents backup capacitor depletion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZSXI | 4 Mbit (256K × 16), 45 ns access, 3.3 V, SOJ-44; higher access time, no byte-select pins | Lacks UB#/LB# - requires external gating or wider bus arbitration for byte-level access | Select when absolute speed is secondary to cost and long-term availability in legacy designs |
| IS61WV25616EDBLL-10MLI | 4 Mbit (256K × 16), 10 ns access, 3.3 V, TSOPII-44; faster but different package and pinout | TSOPII-44 footprint incompatible with SOJ-44 PCB; no pin-to-pin mapping with R1RW0416DGE-2PR#B1 | Choose for new designs prioritizing 10 ns performance and surface-mount density, accepting layout redesign |
Compared with CY62148EV30LL-45ZSXI and IS61WV25616EDBLL-10MLI, the R1RW0416DGE-2PR#B1 uniquely balances 12 ns speed, SOJ-44 compatibility, integrated byte-select logic, and 2.0 V data retention - making it optimal for space-constrained, power-aware industrial buffer implementations requiring minimal interface logic.
Availability
R1RW0416DGE-2PR#B1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network packet buffers, and medical imaging frame stores requiring stable component supply across multi-year production cycles.
Supply support for R1RW0416DGE-2PR#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1RW0416D Series was designed specifically for high-density, low-latency memory buffering in resource-constrained embedded systems - emphasizing reliability, pin efficiency, and seamless integration with 3.3 V logic families.
FAQ
What is the guaranteed data retention voltage for R1RW0416DGE-2PR#B1?
The R1RW0416DGE-2PR#B1 guarantees data retention down to 2.0 V minimum supply voltage, as specified in Section 12 of the R10DS0282EJ0100 datasheet. This applies only to L-version devices like the R1RW0416DGE-2PR#B1 and ensures reliable memory hold during brown-out conditions or battery backup operation without external supervision circuitry.
Does R1RW0416DGE-2PR#B1 support independent byte write operations?
Yes, the R1RW0416DGE-2PR#B1 supports independent upper- and lower-byte writes using dedicated UB# and LB# control pins. When LB# is asserted low and UB# is high, only I/O1–I/O8 are written; conversely, asserting UB# low and LB# high writes only I/O9–I/O16 - enabling precise 8-bit updates without read-modify-write sequences.
What is the maximum operating current for R1RW0416DGE-2PR#B1 during active read cycles?
The R1RW0416DGE-2PR#B1 draws up to 130 mA maximum operating current (ICC) during active read cycles at 12 ns timing, as measured under conditions of VCC = 3.3 V ± 0.3 V, Ta = 0 to +70 °C, and CS# = VIL. This value is confirmed in the DC Characteristics table on page 5 of the official datasheet.
Is R1RW0416DGE-2PR#B1 pin-compatible with other members of the R1RW0416D Series?
Yes, the R1RW0416DGE-2PR#B1 shares identical 44-pin SOJ pinout and signal assignments with all R1RW0416D Series variants listed in the Ordering Information table - including R1RW0416DGE-2LR and R1RW0416DSB-2PR - enabling drop-in substitution for speed or power-grade upgrades without PCB changes.
What package type does R1RW0416DGE-2PR#B1 use, and what are its mounting characteristics?
The R1RW0416DGE-2PR#B1 uses a 400-mil 44-pin plastic SOJ (Small Outline J-Lead) package optimized for high-density surface mounting. Its J-lead geometry provides mechanical robustness and thermal performance suitable for reflow soldering, and the center VCC/VSS pin arrangement minimizes power rail inductance in compact layouts.
R1RW0416DGE-2PR#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
R1RW0416DGE-2PR#B1 FAQ
1.How can I place an order for R1RW0416DGE-2PR#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DGE-2PR#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DGE-2PR#B1 reliable?
The price and inventory of R1RW0416DGE-2PR#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DGE-2PR#B1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DGE-2PR#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DGE-2PR#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DGE-2PR#B1?
R1RW0416DGE-2PR#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DGE-2PR#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DGE-2PR#B1?
For technical support, including R1RW0416DGE-2PR#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DGE-2PR#B1 requirements.
6.How does Aetrix verify that R1RW0416DGE-2PR#B1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DGE-2PR#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DGE-2PR#B1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DGE-2PR#B1?
All R1RW0416DGE-2PR#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DGE-2PR#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DGE-2PR#B1 part is unused and in its original packaging.
Return procedure for R1RW0416DGE-2PR#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DGE-2PR#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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