My Inquiry
My Account
Renesas R1RW0416DSB-0PI#D1
- Part No.:
- R1RW0416DSB-0PI#D1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-0PI#D1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:135
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1RW0416DSB-0PI#D1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 10ns max access time and center VCC/VSS pinout. It delivers TTL-compatible I/O, 145mA max operating current, and supports byte-selectable read/write operations for cache and buffer memory in embedded computing systems.
For engineers reviewing the R1RW0416DSB-0PI#D1 datasheet, R1RW0416DSB-0PI#D1 pinout, R1RW0416DSB-0PI#D1 application, or R1RW0416DSB-0PI#D1 equivalent, this page provides verified specifications, package mapping to 400-mil 44-pin plastic TSOPII, functional pin roles, low-power retention behavior (0.4mA max), and validated alternative SRAMs for system-level memory design.
Technical Context
The R1RW0416DSB-0PI#D1 implements a fully static CMOS architecture with 6-transistor memory cells, requiring no clocks or refresh cycles. Its operation relies on asynchronous control via CS#, OE#, WE#, UB#, and LB# signals, enabling independent upper- and lower-byte access without bus turnaround delay.
It supports equal access and cycle times (10ns), direct TTL-level interfacing on all pins, and dual standby modes: TTL standby (40mA max) and CMOS standby (5mA max). Data retention is guaranteed down to 2.0V with ≤400μA current draw-specifically validated for L- and S-versions per datasheet Rev.1.00.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - supports wide-data-path buffering without external data-width expansion |
| Access time | 10 ns (max) - enables integration into 100 MHz synchronous bus interfaces with zero wait states |
| Supply voltage | 3.3 V ±0.3 V - compatible with standard LVCMOS-3.3 logic domains and eliminates level-shifting needs |
| Operating current | 145 mA (max) - defines peak power budget for thermal and regulator sizing in high-throughput memory subsystems |
| Data retention voltage | 2.0 V (min) - ensures nonvolatile data hold during brown-out or battery-backup transitions |
| Standby current | 5 mA (CMOS mode, max) - enables ultra-low-power sleep states in portable or energy-constrained systems |
| Pin count & type | 44-pin surface-mount - matches industry-standard TSOPII footprint for automated PCB assembly |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (Thin Small Outline Package, Type II), lead-free and RoHS-compliant per Renesas documentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no address multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus with TTL-compatible drive strength and 8mA sink capability |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address or control transitions |
| OE# | Output enable | Active-low signal gating output drivers; allows shared-bus contention management |
| WE# | Write enable | Active-low write strobe; combined with CS# and byte selects to initiate write cycles |
| UB#, LB# | Upper/lower byte select | Independent 8-bit write masking; enables partial-word writes without read-modify-write overhead |
| VCC, VSS | Power/ground | Center-placed dual VCC/VSS configuration improves power integrity and reduces simultaneous switching noise |
| NC | No connection | Unbonded pin; must remain unconnected and unpopulated on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, timing strobe, or refresh circuitry required - simplifies timing-critical controller design |
| Byte-selectable I/O | Independent UB#/LB# control enables 8-bit sub-word writes - avoids bus locking and improves memory bandwidth efficiency |
| TTL-compatible interface | All inputs and outputs meet TTL voltage thresholds - interoperable with legacy microcontrollers and FPGAs without level shifters |
| Low-voltage data retention | Guaranteed data hold at VCC ≥ 2.0 V with ≤400 μA current - supports seamless transition to battery backup mode |
| Center VCC/VSS pinout | Reduces ground bounce and power rail noise - enhances signal integrity in high-speed parallel memory buses |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: High-speed parallel SRAM serving as dual-port-accessible scratchpad memory for cyclic process data exchange. Use Value: 10ns access time ensures sub-microsecond response to fieldbus interrupts; byte-select capability minimizes bus arbitration latency during partial register updates. |
Use Scenario: Temporary storage of uncompressed DICOM image frames during acquisition in portable ultrasound devices. IC Role / Device Role / Timing Role: Wide-data-path (16-bit) buffer memory interfacing directly with image sensor ADC and display controller. Use Value: 256-kword × 16-bit organization matches typical 1024×768 monochrome frame buffers; 2.0V data retention enables safe suspend-to-RAM during battery swaps. |
| Automotive ADAS Pre-Processing Cache | Test Equipment Pattern Memory |
Use Scenario: On-board radar signal preprocessing where low-latency memory access is critical for real-time FFT windowing. IC Role / Device Role / Timing Role: Low-jitter, asynchronous SRAM used as coefficient and sample cache adjacent to DSP cores. Use Value: Equal tAA and tRC (10ns) eliminates pipeline stalls; CMOS standby current (5mA max) meets automotive cold-soak power budgets. |
Use Scenario: High-repetition pattern generation in automated test equipment requiring deterministic memory access for stimulus sequencing. IC Role / Device Role / Timing Role: Static memory providing glitch-free, cycle-exact waveform data to high-speed DACs and comparators. Use Value: No refresh or clock dependency ensures zero-cycle jitter; TTL-compatible outputs drive 50Ω transmission lines directly without termination redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns access, 3.3V, 256k×16, 44-pin TSOP-II - identical density, timing, and package; differs in pinout (VCC/VSS not centered) | Requires PCB layout revision due to non-center power pin placement; lacks L/S-version low-power retention specs | Select when board space permits rework and retention voltage margin >2.2V suffices |
| AS6C4008-10TIN | 10ns access, 3.3V, 256k×16, 44-pin TSOP-II - same timing and voltage, but higher standby current (15mA vs. 5mA) | Not suitable for battery-backed retention; higher ISB limits use in always-on monitoring subsystems | Prefer for cost-sensitive industrial controls where continuous power is guaranteed |
Compared with R1RW0416DSB-0PI#D1, IS61LV25616AL-10TLI offers identical speed and density but requires layout adaptation and lacks certified 2.0V retention, while AS6C4008-10TIN trades lower standby power for higher cost and reduced battery-backup viability.
Availability
R1RW0416DSB-0PI#D1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and automotive ADAS pre-processing caches requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for R1RW0416DSB-0PI#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0416D Series was designed specifically for high-speed, low-power parallel SRAM applications in embedded systems requiring deterministic timing, battery-backed data retention, and robust industrial temperature operation (0°C to +70°C).
FAQ
What is the maximum operating current specification for R1RW0416DSB-0PI#D1?
The R1RW0416DSB-0PI#D1 has a maximum operating current of 145 mA under worst-case conditions (10ns cycle, CS# = VIL, IOUT = 0 mA, Ta = 0°C to +70°C, VCC = 3.3 V ±0.3 V). This value defines the peak DC load for power supply and thermal design - actual current depends on bus activity, byte-select usage, and ambient temperature. The R1RW0416DSB-0PI#D1 datasheet specifies this limit on page 5 under DC Characteristics.
Does R1RW0416DSB-0PI#D1 support true 16-bit bidirectional data transfer?
Yes, the R1RW0416DSB-0PI#D1 supports full 16-bit bidirectional data transfer via its I/O1–I/O16 pins, with TTL-compatible output drive (VOH ≥ 2.4 V at −4 mA, VOL ≤ 0.4 V at 8 mA) and input thresholds meeting VIH ≥ 2.0 V and VIL ≤ 0.8 V. The R1RW0416DSB-0PI#D1 enables simultaneous read or write of all 16 bits, and also supports independent 8-bit operations using UB# and LB# - confirmed in the Operation Table on page 4 of the datasheet.
Is R1RW0416DSB-0PI#D1 pin-compatible with other members of the R1RW0416D Series?
Yes, the R1RW0416DSB-0PI#D1 shares identical pinout and electrical interface with all R1RW0416D Series variants in the 400-mil 44-pin plastic TSOPII package, including R1RW0416DSB-0PR and R1RW0416DSB-2SR. Differences are limited to access time (10ns vs. 12ns) and version-specific parameters (e.g., standby current, retention behavior), not pin function or assignment - verified in the Pin Description and Ordering Information tables on pages 2 and 1 of the datasheet.
What is the minimum VCC required to retain data in R1RW0416DSB-0PI#D1?
The R1RW0416DSB-0PI#D1 guarantees data retention down to a minimum VCC of 2.0 V, provided CS# remains within VCC − 0.2 V to VCC and input voltages stay within defined bias ranges. This specification applies specifically to L- and S-versions - and since R1RW0416DSB-0PI#D1 is an S-version part (denoted by "S" in suffix), it meets this 2.0 V retention threshold with ≤200 μA current draw, as documented on page 12 of the datasheet.
Can R1RW0416DSB-0PI#D1 operate reliably at 70°C ambient temperature?
Yes, the R1RW0416DSB-0PI#D1 is rated for operation across 0°C to +70°C ambient temperature (Topr), with all AC and DC specifications - including 10ns access time, 145 mA max ICC, and 5 mA max ISB1 - guaranteed over this full range. Thermal derating is not required, and the device's CMOS process ensures stable performance without refresh or timing adjustment at maximum temperature - per Absolute Maximum Ratings and DC Characteristics tables on pages 4 and 5.
R1RW0416DSB-0PI#D1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-0PI#D1 FAQ
1.How can I place an order for R1RW0416DSB-0PI#D1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-0PI#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-0PI#D1 reliable?
The price and inventory of R1RW0416DSB-0PI#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-0PI#D1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-0PI#D1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-0PI#D1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-0PI#D1?
R1RW0416DSB-0PI#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-0PI#D1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-0PI#D1?
For technical support, including R1RW0416DSB-0PI#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-0PI#D1 requirements.
6.How does Aetrix verify that R1RW0416DSB-0PI#D1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-0PI#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-0PI#D1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-0PI#D1?
All R1RW0416DSB-0PI#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-0PI#D1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-0PI#D1 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-0PI#D1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DSB-0PI#D1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
