Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1RW0416DSB-0PI#S0

Name: R1RW0416DSB-0PI#S0
Brand: Renesas
SKU: R1RW0416DSB-0PI#S0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: R1RW0416DSB-0PI#S0

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: R1RW0416DSB-0PI#S0.pdf

Description:: STANDARD SRAM, 256KX16, 10NS

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:291

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

R1RW0416DSB-0PI from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply with 10 ns max access time and −40 to +85°C industrial temperature range. It serves as cache or buffer memory in embedded control systems requiring wide data bus width, low-latency random access, and TTL-compatible I/O signaling.

For engineers reviewing the R1RW0416DSB-0PI datasheet, R1RW0416DSB-0PI pinout, R1RW0416DSB-0PI application, or R1RW0416DSB-0PI equivalent, this page delivers verified package mapping (400-mil 44-pin plastic TSOPII), byte-selectable 16-bit I/O architecture, DC/AC timing compliance per REJ03C0109-0201 Rev.2.01, and validated alternatives for SRAM replacement in space-constrained industrial designs.

Technical Context

The R1RW0416DSB-0PI implements a fully static 6-transistor memory cell array with center VCC/VSS pinout, enabling zero-clock operation and eliminating refresh cycles. Its dual-byte enable (UB#/LB#) supports independent 8-bit read/write operations on upper and lower data words without external logic.

It features TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive (VOL ≤ 0.4 V at 8 mA, VOH ≥ 2.4 V at −4 mA), ensuring direct interface with legacy 3.3 V microcontrollers and FPGAs. Standby current splits into two modes: 40 mA (TTL-level CS#) and 5 mA (CMOS-level bias conditions), supporting dynamic power management.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	4 Mbit (256 kwords × 16 bits) - provides full 16-bit parallel data path for efficient CPU/FPGA interfacing
Access time	10 ns max - enables sub-100 MHz synchronous bus operation without wait states
Supply voltage	3.3 V ± 0.3 V - compatible with standard 3.3 V logic rails; no level-shifting required
Operating current	130 mA max at min cycle - defines peak power draw during burst read/write sequences
Standby current	5 mA max (CMOS mode) - supports ultra-low-power sleep states in battery-backed or energy-sensitive systems
Temperature range	−40 to +85°C - qualified for industrial-grade deployment without derating
Package	400-mil 44-pin plastic TSOPII (44P3W-H) - surface-mount footprint optimized for high-density PCB layouts

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (44P3W-H), JEDEC-standard thin shrink small outline package with gull-wing leads, 0.8 mm lead pitch, and center power/ground pin arrangement.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address input	18-bit address bus supporting full 256-kword addressing; no address multiplexing required
I/O1–I/O8	Data input/output (lower byte)	Bi-directional 8-bit data path enabled by LB#; high-impedance when disabled
I/O9–I/O16	Data input/output (upper byte)	Bi-directional 8-bit data path enabled by UB#; isolated from lower byte during partial writes
CS#	Chip select	Active-low global enable; places device in standby (40 mA) when high, active (130 mA) when low
OE#	Output enable	Active-low control for output drivers; allows read data to appear on I/O pins only when asserted
WE#	Write enable	Active-low write strobe; initiates write cycle when CS# and LB#/UB# are also low
UB# / LB#	Upper/lower byte select	Independent 8-bit write masking; enables partial-word writes without read-modify-write overhead
VCC	Power supply	3.3 V core and I/O supply; center-placed for optimal power distribution and noise reduction
VSS	Ground	Reference ground; center-placed adjacent to VCC for minimized loop inductance
NC	No connection	Unbonded pin; must remain unconnected per datasheet; no internal function or tie requirement

Key Features

Feature	Design Value
Single 3.3 V supply operation	Eliminates need for dual-voltage regulators or level shifters in 3.3 V system designs
Byte-selectable 16-bit I/O	Enables efficient 8-bit peripheral interfacing or mixed-width memory mapping without glue logic
Fully static architecture	Removes clock tree, timing constraints, and refresh circuitry-simplifies controller firmware and PCB layout
TTL-compatible inputs and outputs	Direct connection to legacy 3.3 V microcontrollers (e.g., Renesas SH, ARM9-based SoCs) without signal conditioning
Center VCC/VSS pinout	Reduces simultaneous switching noise and improves power integrity in high-speed memory buses

Applications

Industrial PLC Data Buffer	Automotive ADAS Preprocessing Cache
Use Scenario: Real-time I/O data aggregation and temporary storage in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed parallel buffer between fieldbus interface ASIC and main CPU, absorbing bursty sensor data at 10 ns latency. Use Value: Eliminates FIFO bottlenecks and enables zero-wait-state access for 16-bit instruction/data fetches during motion control loops.	Use Scenario: Frame buffering for camera preprocessing units in driver-assistance systems before DSP execution. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for image line buffers and histogram accumulation prior to GPU offload. Use Value: Supports 60+ FPS raw sensor streaming with byte-select writes to avoid overwriting active pixel regions during concurrent reads.
Medical Imaging Control Board	Test & Measurement Equipment Memory
Use Scenario: Temporary waveform storage and real-time FFT coefficient buffering in portable ultrasound front-end modules. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer for ADC sample capture and DSP result staging. Use Value: Enables continuous acquisition at >20 MSPS with deterministic 10 ns read/write turnaround for time-critical beamforming calculations.	Use Scenario: Pattern memory in automated test equipment generating high-speed digital stimulus vectors. IC Role / Device Role / Timing Role: Static pattern store accessed synchronously by high-speed pattern generator logic with precise timing margins. Use Value: Guarantees sub-10 ns setup/hold compliance for 100+ MHz vector clocks, reducing timing closure effort in FPGA-based ATE controllers.

Industrial PLC Data Buffer

Automotive ADAS Preprocessing Cache

Use Scenario: Real-time I/O data aggregation and temporary storage in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: High-speed parallel buffer between fieldbus interface ASIC and main CPU, absorbing bursty sensor data at 10 ns latency.

Use Value: Eliminates FIFO bottlenecks and enables zero-wait-state access for 16-bit instruction/data fetches during motion control loops.

Use Scenario: Frame buffering for camera preprocessing units in driver-assistance systems before DSP execution.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for image line buffers and histogram accumulation prior to GPU offload.

Use Value: Supports 60+ FPS raw sensor streaming with byte-select writes to avoid overwriting active pixel regions during concurrent reads.

Medical Imaging Control Board

Test & Measurement Equipment Memory

Use Scenario: Temporary waveform storage and real-time FFT coefficient buffering in portable ultrasound front-end modules.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer for ADC sample capture and DSP result staging.

Use Value: Enables continuous acquisition at >20 MSPS with deterministic 10 ns read/write turnaround for time-critical beamforming calculations.

Use Scenario: Pattern memory in automated test equipment generating high-speed digital stimulus vectors.

IC Role / Device Role / Timing Role: Static pattern store accessed synchronously by high-speed pattern generator logic with precise timing margins.

Use Value: Guarantees sub-10 ns setup/hold compliance for 100+ MHz vector clocks, reducing timing closure effort in FPGA-based ATE controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-10TLI	10 ns access, same 256k×16 organization, but uses 44-pin TSOP-II with different pinout (VCC/VSS at corners, not center)	Lacks center VCC/VSS layout; higher simultaneous switching noise risk in dense memory buses	Select when board layout already accommodates IS61LV25616AL footprint and noise margin analysis confirms adequacy
AS6C4008-10BIN	10 ns access, 256k×16, 44-pin SOJ package; higher standby current (25 mA vs. 5 mA CMOS mode)	SOJ package requires wave-solder reflow; less suitable for fine-pitch mixed-technology assemblies	Prefer for through-hole prototyping or legacy SOJ-based systems where TSOPII rework is impractical

Compared with R1RW0416DSB-0PI, IS61LV25616AL-10TLI offers identical speed and density but compromises power integrity via non-center power pinout, while AS6C4008-10BIN trades lower standby efficiency and SOJ assembly complexity for broader distributor availability and long-term stock stability.

Availability

R1RW0416DSB-0PI is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ADAS preprocessing caches, and medical imaging control boards requiring stable component supply across extended product lifecycles.

Supply support for R1RW0416DSB-0PI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RW0416DI Series was designed specifically for high-reliability industrial and transportation applications demanding wide-temperature SRAM with byte-select capability and robust 3.3 V interoperability.

FAQ

What is the maximum operating frequency supported by the R1RW0416DSB-0PI?

The R1RW0416DSB-0PI does not operate on a clock signal-it is a fully static RAM. Its 10 ns access time supports bus frequencies up to approximately 100 MHz in systems with zero wait-state timing, provided setup/hold and cycle time constraints (tRC = 10 ns) are met. The R1RW0416DSB-0PI achieves this without internal clocks or refresh cycles, making it suitable for asynchronous or source-synchronous interfaces.

Does the R1RW0416DSB-0PI require external refresh circuitry?

No, the R1RW0416DSB-0PI is a true static RAM built with 6-transistor memory cells and requires no refresh cycles. This eliminates timing-critical refresh overhead and simplifies controller design-unlike DRAM, the R1RW0416DSB-0PI retains data indefinitely as long as VCC is applied and CS# remains high during standby.

Can the R1RW0416DSB-0PI be used with a 5 V microcontroller interface?

No-the R1RW0416DSB-0PI is strictly a 3.3 V device with VIH minimum of 2.0 V and absolute maximum VCC of +4.6 V. Direct connection to 5 V logic violates its input voltage rating (VT max = VCC + 0.5 V) and risks damage. Interface requires level translation, such as TI SN74AVC4T245 or discrete resistor dividers compliant with VIH/VIL thresholds specified in REJ03C0109-0201.

What is the significance of the "center VCC and VSS" pinout in the R1RW0416DSB-0PI?

The center VCC/VSS arrangement in the R1RW0416DSB-0PI reduces power delivery loop inductance and minimizes simultaneous switching output (SSO) noise on the memory bus. This layout improves signal integrity for high-speed 16-bit parallel interfaces and lowers ground bounce risk compared to corner-placed power pins-critical for stable operation at 10 ns timing margins.

How does the R1RW0416DSB-0PI handle partial-word writes?

The R1RW0416DSB-0PI uses dedicated UB# and LB# pins to enable independent upper- or lower-byte writes without read-modify-write sequences. When only LB# is asserted (with CS# and WE# low), only I/O1–I/O8 are written; asserting UB# alone writes only I/O9–I/O16. This preserves data integrity in mixed-width memory maps and reduces bus contention-core behavior confirmed in the Operation Table on page 4 of REJ03C0109-0201.

R1RW0416DSB-0PI#S0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

R1RW0416DSB-0PI#S0 FAQ

1.How can I place an order for R1RW0416DSB-0PI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1RW0416DSB-0PI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1RW0416DSB-0PI#S0 reliable?

The price and inventory of R1RW0416DSB-0PI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-0PI#S0 is usually 5 days.

3.What payment methods are accepted for R1RW0416DSB-0PI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-0PI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1RW0416DSB-0PI#S0?

R1RW0416DSB-0PI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1RW0416DSB-0PI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1RW0416DSB-0PI#S0?

For technical support, including R1RW0416DSB-0PI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-0PI#S0 requirements.

6.How does Aetrix verify that R1RW0416DSB-0PI#S0 is sourced from the original manufacturer or authorized distributors?

All R1RW0416DSB-0PI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-0PI#S0 meets industry standards.

7.What is the process for return or replacement of R1RW0416DSB-0PI#S0?

All R1RW0416DSB-0PI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-0PI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1RW0416DSB-0PI#S0 part is unused and in its original packaging.

Return procedure for R1RW0416DSB-0PI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…