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Renesas R1RW0416DSB-0PI#S1

Part No.:
R1RW0416DSB-0PI#S1
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixR1RW0416DSB-0PI#S1.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,460

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Product details

Overview

R1RW0416DSB-0PI#S1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 10ns max access time and TTL-compatible I/O. It features center VCC/VSS pinout, byte-selectable read/write capability, and is packaged in 400-mil 44-pin plastic TSOPII for cache and buffer memory in embedded computing systems.

For engineers reviewing the R1RW0416DSB-0PI#S1 datasheet, R1RW0416DSB-0PI#S1 pinout, R1RW0416DSB-0PI#S1 application, or R1RW0416DSB-0PI#S1 equivalent, key selection criteria include 10ns access timing, 16-bit parallel data interface, low-power standby modes (5mA CMOS standby), byte-select control (UB#/LB#), and compatibility with TTL-level system buses.

Technical Context

This SRAM implements a fully static 6-transistor memory cell architecture with no clocks or refresh required. Its operation relies on asynchronous control signals-CS#, OE#, WE#, UB#, and LB#-to enable independent upper- and lower-byte access without bus contention.

The device supports equal access and cycle times (10ns), direct TTL interfacing on all pins, and dual standby current modes: 40mA TTL standby and 5mA CMOS standby (guaranteed for L/S versions). Data retention is supported down to 2.0V VCC with ≤500µA current draw in L-version mode.

Key Specifications

ParameterValue and Actual Design Meaning
Memory density4 Mbit (256 kwords × 16 bits) - provides wide-data-path buffering for 16-bit microprocessors and DSPs
Access time10 ns (max) - enables tight timing integration with high-speed CPU buses and real-time controllers
Supply voltage5.0 V ±10% - compatible with legacy 5V TTL logic families without level-shifting
Standby current5 mA (CMOS mode) - reduces power in idle states for battery-backed or low-duty-cycle systems
Data retention VCC2.0 V (min) - maintains stored data during brown-out or controlled power-down sequences
I/O interfaceTTL-compatible inputs/outputs - ensures direct connection to 5V microcontroller address/data buses
Byte controlSeparate UB# and LB# pins - allows partial-word writes without read-modify-write overhead

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (Thin Small Outline Package, Type II), center VCC/VSS configuration.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address input18-bit address bus supporting full 256-kword addressing (218 = 262,144 words)
I/O1–I/O16Data input/output16-bit bidirectional data bus; I/O1–I/O8 = lower byte, I/O9–I/O16 = upper byte
CS#Chip selectActive-low enable for device selection; must be stable before address or control transitions
OE#Output enableActive-low control for output drivers; used with CS# to gate read data onto bus
WE#Write enableActive-low signal initiating write cycles; sampled with CS# and byte selects to latch data
UB# / LB#Upper/lower byte selectIndependent active-low controls enabling 8-bit partial writes without disturbing other byte
VCCPower supplyPrimary 5V supply; multiple VCC pins distributed for low-noise decoupling
VSSGroundReference ground; multiple VSS pins placed adjacent to VCC for balanced return paths
NCNo connectionUnbonded pin; must remain unconnected per design specification

Key Features

FeatureDesign Value
Single 5V supply operationEliminates need for dual-rail regulators or level shifters in 5V system designs
10ns access time with equal cycle timeEnables zero-wait-state operation with 100 MHz CPU buses and synchronous peripherals
Independent upper/lower byte controlReduces bus turnaround time and avoids full-word read-modify-write for byte updates
CMOS standby current (5mA)Extends hold time in battery-backed applications while maintaining full data integrity
Center VCC/VSS pinoutImproves power distribution symmetry and reduces simultaneous switching noise (SSN)

Applications

Industrial PLC Memory BufferAutomotive Engine Control Unit Cache

Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers requiring deterministic memory access.

IC Role / Device Role / Timing Role: High-speed buffer between FPGA-based I/O processor and ARM Cortex-M7 core, handling 16-bit register map updates.

Use Value: 10ns access time eliminates pipeline stalls during cyclic scan intervals; byte-select capability isolates diagnostic data writes from control word updates.

Use Scenario: Storing calibrated sensor lookup tables and transient engine parameter history in Tier-1 ECU modules.

IC Role / Device Role / Timing Role: Non-refreshing cache for flash-resident calibration data, accessed by TriCore TC275 during combustion cycle timing-critical phases.

Use Value: 2.0V data retention supports safe shutdown during ignition-off transients; 5mA CMOS standby minimizes parasitic drain on vehicle battery.

Medical Imaging Frame BufferAvionics Display Processor Memory

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames prior to JPEG compression and network transmission.

IC Role / Device Role / Timing Role: Dual-port-capable frame buffer interfaced to image sensor controller and DMA engine via 16-bit parallel bus.

Use Value: TTL-compatible I/O ensures seamless integration with legacy imaging ASICs; 44-pin TSOPII footprint fits constrained PCB layouts near sensor interfaces.

Use Scenario: Rendering buffer for multifunction display units in certified flight deck systems requiring DO-254 compliance.

IC Role / Device Role / Timing Role: Deterministic-access memory for graphics overlay generation, synchronized to ARINC 661 widget rendering engine clock.

Use Value: Equal access/cycle timing guarantees pixel throughput stability; center VCC/VSS layout meets EMI requirements for avionics EMC testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI10ns access, 3.3V supply only; no 5V toleranceRequires level-shifting in 5V systems; unsuitable for direct TTL replacementSelect only when migrating to 3.3V system architecture with compatible I/O voltage rails
AS6C4008-10TIN10ns access, 5V supply, but 512k × 8-bit organizationHalf the data width; requires two devices for 16-bit bus, increasing board area and routing complexityChoose only if existing design uses 8-bit data path or space constraints allow dual-package layout

Compared with IS61LV25616AL-10TLI and AS6C4008-10TIN, the R1RW0416DSB-0PI#S1 delivers native 5V TTL compatibility and true 16-bit width in a single 44-pin TSOPII package-reducing BOM count, eliminating level shifters, and simplifying timing closure in legacy industrial and automotive control systems.

Availability

R1RW0416DSB-0PI#S1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ECU cache subsystems, and medical imaging frame buffers requiring stable component supply across extended production lifecycles.

Supply support for R1RW0416DSB-0PI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RP0416D Series was designed specifically for high-reliability, high-speed parallel memory applications in mission-critical embedded systems where deterministic timing, 5V compatibility, and long-term supply stability are mandatory.

FAQ

What is the maximum operating temperature range for the R1RW0416DSB-0PI#S1?

The R1RW0416DSB-0PI#S1 is rated for operation from 0°C to +70°C ambient temperature, as specified in the Absolute Maximum Ratings table of its official Renesas datasheet (R10DS0284EJ0100 Rev.1.00). This commercial-grade temperature range aligns with standard industrial control and computing environments where airflow and thermal management are controlled.

Does the R1RW0416DSB-0PI#S1 support partial-word writes without read-modify-write cycles?

Yes, the R1RW0416DSB-0PI#S1 supports true partial-word writes via dedicated UB# (upper byte) and LB# (lower byte) control pins. When only one byte select is asserted low with WE# and CS# active, only the corresponding 8-bit segment (I/O1–I/O8 or I/O9–I/O16) is written-eliminating the need for external read-modify-write sequences and reducing bus arbitration latency.

What is the minimum VCC required to retain data in the R1RW0416DSB-0PI#S1 during power loss?

The R1RW0416DSB-0PI#S1 guarantees data retention down to 2.0V VCC, as confirmed in the Low VCC Data Retention Characteristics section of the Renesas datasheet. This applies to both L- and S-versions and ensures reliable hold functionality during brown-out conditions or controlled power-down sequences without external backup capacitors.

Is the R1RW0416DSB-0PI#S1 pin-compatible with other members of the R1RP0416D Series?

Yes, the R1RW0416DSB-0PI#S1 shares identical 44-pin TSOPII pinout and signal mapping with all R1RP0416D Series variants-including R1RP0416DSB-0PR, -2PR, -2LR, and -2SR-as documented in the Pin Arrangement and Pin Description sections of the datasheet. Only timing and standby current specifications differ across versions.

What is the maximum output drive strength of the R1RW0416DSB-0PI#S1 I/O pins?

The R1RW0416DSB-0PI#S1 I/O pins deliver guaranteed VOL ≤ 0.4V at IOL = 8mA and VOH ≥ 2.4V at IOH = −4mA under standard test conditions (VCC = 5.0V ±10%, Ta = 0 to +70°C), confirming robust TTL-compatible drive capability sufficient to directly drive multiple 74LS-series loads without external buffers.

R1RW0416DSB-0PI#S1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

R1RW0416DSB-0PI#S1 FAQ

1.How can I place an order for R1RW0416DSB-0PI#S1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1RW0416DSB-0PI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1RW0416DSB-0PI#S1 reliable?

The price and inventory of R1RW0416DSB-0PI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-0PI#S1 is usually 5 days.

3.What payment methods are accepted for R1RW0416DSB-0PI#S1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-0PI#S1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1RW0416DSB-0PI#S1?

R1RW0416DSB-0PI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1RW0416DSB-0PI#S1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1RW0416DSB-0PI#S1?

For technical support, including R1RW0416DSB-0PI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-0PI#S1 requirements.

6.How does Aetrix verify that R1RW0416DSB-0PI#S1 is sourced from the original manufacturer or authorized distributors?

All R1RW0416DSB-0PI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-0PI#S1 meets industry standards.

7.What is the process for return or replacement of R1RW0416DSB-0PI#S1?

All R1RW0416DSB-0PI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-0PI#S1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1RW0416DSB-0PI#S1 part is unused and in its original packaging.

Return procedure for R1RW0416DSB-0PI#S1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1RW0416DSB-0PI#S1 Tags

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