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Renesas R1RW0416DSB-0PR#D1
- Part No.:
- R1RW0416DSB-0PR#D1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-0PR#D1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,367
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Product details
Overview
R1RW0416DSB-0PR#D1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 10ns max access time and TTL-compatible I/O. It features center VCC/VSS pinout, byte-selectable read/write capability (UB#/LB#), and is designed for cache and buffer memory in high-density embedded systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RW0416DSB-0PR#D1 datasheet, R1RW0416DSB-0PR#D1 pinout, R1RW0416DSB-0PR#D1 application, or R1RW0416DSB-0PR#D1 equivalent, this page delivers verified specifications, package mapping to 400-mil 44-pin plastic TSOPII, functional pin roles, real-world use cases in industrial control and networking buffers, and two validated alternative SRAMs with documented differences.
Technical Context
The R1RW0416DSB-0PR#D1 implements a fully static 6-transistor cell architecture with no clocks or refresh required, supporting equal access and cycle times (10ns). Its dual-byte select (UB#/LB#) enables independent 8-bit access to upper and lower data words without external logic.
It operates across 0°C to +70°C with guaranteed data retention down to 2.0V VCC in low-power modes, and supports three standby current states: TTL-level (40mA), CMOS-level (5mA), and L/S-version optimized levels (0.8mA/0.5mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 kwords × 16 bits) - provides full 16-bit parallel data path for efficient CPU or DSP interfacing |
| Access time | 10 ns (max) - enables direct attachment to 100 MHz bus systems without wait states |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard 3.3V logic families and eliminates level-shifting requirements |
| Operating current | 145 mA (max) - defines peak power draw during active read/write cycles at 10ns timing |
| Standby current | 5 mA (CMOS mode) - supports low-power suspend states while retaining memory contents |
| Data retention voltage | 2.0 V (min) - ensures non-volatile data hold during brown-out or backup battery operation |
| Input/output compatibility | TTL-compatible - allows direct connection to legacy 3.3V microcontrollers and FPGAs without interface buffers |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (thin small outline package, 0.8 mm pitch, surface-mount).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting 256k-word addressing; no multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus; supports simultaneous 16-bit transfers |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address setup |
| OE# | Output enable | Active-low control for output drivers; used to gate read data onto shared buses |
| WE# | Write enable | Active-low signal initiating write operations; coordinates with LB#/UB# for byte writes |
| UB# / LB# | Upper/lower byte select | Independent active-low controls enabling 8-bit writes to I/O9–I/O16 or I/O1–I/O8 respectively |
| VCC / VSS | Power / ground | Center-placed pins reduce power distribution inductance and improve noise immunity |
| NC | No connection | Unbonded pin; must remain unconnected per design to avoid unintended coupling |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no timing strobes - simplifies system timing design and eliminates hidden refresh overhead |
| Byte-selectable I/O | Independent UB#/LB# control allows partial-word writes without read-modify-write cycles or external masking logic |
| Center VCC/VSS pinout | Reduces simultaneous switching noise and improves power integrity in high-speed PCB layouts |
| Low data retention current | 0.8 mA (L-version) or 0.5 mA (S-version) at 2.0 V - extends battery life in backup memory applications |
| Direct TTL compatibility | All inputs and outputs meet TTL voltage thresholds - eliminates need for level translators in mixed-voltage systems |
Applications
| Industrial PLC Data Buffer | Networking Packet Buffer |
|---|---|
Use Scenario: Real-time buffering of sensor acquisition data and control command queues in programmable logic controllers. IC Role / Device Role / Timing Role: High-speed parallel SRAM serving as dual-port-accessible scratchpad memory for deterministic interrupt response. Use Value: 10ns access enables sub-100ns data fetch latency, critical for meeting hard real-time scan cycle deadlines in IEC 61131-3 environments. |
Use Scenario: Temporary storage of Ethernet frame payloads in switch fabric or router line cards before forwarding decisions. IC Role / Device Role / Timing Role: 16-bit-wide buffer memory interfacing directly to MAC-layer controllers for zero-wait-state packet assembly. Use Value: Byte-select capability allows efficient handling of misaligned IP headers and VLAN tags without full-word read-modify-write overhead. |
| Medical Imaging Frame Store | Test Equipment Pattern Memory |
Use Scenario: Storing digitized ultrasound or X-ray frames during preprocessing prior to GPU-based reconstruction. IC Role / Device Role / Timing Role: High-density, low-latency memory bank providing burst-mode pixel data to image processing pipelines. Use Value: 256-kword × 16-bit organization matches common 16-bit ADC output widths and reduces external address decoding complexity. |
Use Scenario: Holding stimulus and expected response vectors in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access memory used in pattern generators where cycle-to-cycle repeatability is mandatory. Use Value: Equal access and cycle times (10ns) guarantee fixed latency between vector load and output assertion, essential for timing-critical ATE synchronization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns access, 256k × 16-bit, 3.3V, 44-pin TSOP-II - identical organization and speed but higher standby current (12mA vs 5mA) | Less suitable for battery-backed or thermally constrained systems due to higher quiescent power | Select when legacy IS61LV footprint compatibility is required and power budget permits higher ISB |
| AS6C4008-10TIN | 10ns access, 256k × 16-bit, 3.3V, 44-pin TSOP-II - same speed and density but lacks UB#/LB# byte-select control | Requires external gating logic for byte writes, increasing BOM count and layout area | Choose only if byte-select functionality is unused and cost-per-unit is prioritized over design simplicity |
Compared with IS61LV25616AL-10TLI and AS6C4008-10TIN, the R1RW0416DSB-0PR#D1 offers lower standby current and native byte-select capability - reducing thermal load and eliminating external logic in partial-word write scenarios typical of industrial and test equipment designs.
Availability
R1RW0416DSB-0PR#D1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, networking packet buffering, medical imaging frame storage, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for R1RW0416DSB-0PR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1RW0416D Series was developed specifically for high-speed, low-power embedded memory applications demanding deterministic timing, wide data paths, and robust data retention - targeting cache, buffer, and real-time data logging subsystems.
FAQ
What is the maximum operating temperature range for the R1RW0416DSB-0PR#D1?
The R1RW0416DSB-0PR#D1 is rated for operation from 0°C to +70°C ambient temperature. This commercial-grade temperature range is specified in the Absolute Maximum Ratings table and confirmed in the Recommended DC Operating Conditions section of the official Renesas datasheet R10DS0282EJ0100 Rev.1.00. Operation outside this range may result in undefined behavior or accelerated parametric drift.
Does the R1RW0416DSB-0PR#D1 support true dual-byte write operations?
Yes, the R1RW0416DSB-0PR#D1 supports independent upper- and lower-byte writes via dedicated UB# and LB# control signals. When UB# is asserted low and LB# is high, only I/O9–I/O16 are written; when LB# is low and UB# is high, only I/O1–I/O8 are written. This capability is explicitly defined in the Pin Description and Operation Table sections of the R10DS0282EJ0100 datasheet.
What is the minimum VCC required to retain data in the R1RW0416DSB-0PR#D1?
The R1RW0416DSB-0PR#D1 guarantees data retention down to 2.0 V VCC, as specified in the Low VCC Data Retention Characteristics table on page 12 of the R10DS0282EJ0100 datasheet. This applies to both L- and S-versions, and the device maintains stored data without refresh while operating within this voltage window under specified temperature conditions.
Is the R1RW0416DSB-0PR#D1 pin-compatible with other members of the R1RW0416D Series?
Yes, all R1RW0416D Series variants - including R1RW0416DGE-2PR, R1RW0416DSB-2LR, and R1RW0416DSB-2SR - share identical 44-pin TSOPII or SOJ footprints and pin functions. The R1RW0416DSB-0PR#D1 uses the same 400-mil 44-pin plastic TSOPII package and pinout as other S/B-suffix variants, enabling drop-in replacement for speed or power variant changes without PCB modification.
What is the meaning of "center VCC and VSS type pin out" for the R1RW0416DSB-0PR#D1?
"Center VCC and VSS type pin out" means that VCC and VSS pins are positioned near the center of the 44-pin TSOPII package - specifically pins 22 and 23 - rather than at opposite ends. This layout minimizes power distribution loop inductance and improves high-frequency noise suppression, as documented in the Pin Arrangement diagram on page 2 of the R10DS0282EJ0100 datasheet.
R1RW0416DSB-0PR#D1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-0PR#D1 FAQ
1.How can I place an order for R1RW0416DSB-0PR#D1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-0PR#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-0PR#D1 reliable?
The price and inventory of R1RW0416DSB-0PR#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-0PR#D1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-0PR#D1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-0PR#D1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-0PR#D1?
R1RW0416DSB-0PR#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-0PR#D1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-0PR#D1?
For technical support, including R1RW0416DSB-0PR#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-0PR#D1 requirements.
6.How does Aetrix verify that R1RW0416DSB-0PR#D1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-0PR#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-0PR#D1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-0PR#D1?
All R1RW0416DSB-0PR#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-0PR#D1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-0PR#D1 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-0PR#D1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DSB-0PR#D1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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