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Renesas R1RW0416DSB-0PR#S1
- Part No.:
- R1RW0416DSB-0PR#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-0PR#S1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,173
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Product details
Overview
R1RW0416DSB-0PR#S1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, fabricated using CMOS 6-transistor memory cell technology. It delivers 10 ns maximum access time, operates from a single 5.0 V ±10% supply, and supports byte-selectable read/write operations via UB#/LB# control. It is used in cache and buffer memory subsystems requiring wide data bus width and deterministic timing, such as industrial controller memory buffers.
For engineers reviewing the R1RW0416DSB-0PR#S1 datasheet, R1RW0416DSB-0PR#S1 pinout, R1RW0416DSB-0PR#S1 application, or R1RW0416DSB-0PR#S1 equivalent, this page provides verified package mapping (400-mil 44-pin plastic TSOPII), confirmed DC/AC timing parameters, TTL-compatible I/O behavior, standby current values, and byte-select operation logic - all specific to the 10 ns Normal-version variant.
Technical Context
The R1RW0416DSB-0PR#S1 implements a fully static asynchronous SRAM architecture with no clocks or refresh required. Its address decoding supports A0–A17 (18-bit addressing), and bidirectional I/O1–I/O16 provide true 16-bit data width with independent upper/lower byte control via UB# and LB#.
It uses center VCC/VSS pinout for noise reduction and supports three operating modes: active read/write, standby (ISB = 40 mA max), and data retention (VDR = 2.0 V min). All inputs and outputs are TTL-compatible, with VOL ≤ 0.4 V at IOL = 8 mA and VOH ≥ 2.4 V at IOH = −4 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory organization | 256-kword × 16-bit (4 Mbit total); enables full 16-bit parallel data transfers without multiplexing |
| Access time (max) | 10 ns; guarantees worst-case address-to-data valid delay under 5.0 V ±10%, 0–70°C |
| Supply voltage | 5.0 V ±10% (4.5–5.5 V); compatible with standard TTL logic rails and legacy 5 V systems |
| Operating current (max) | 170 mA; defines peak power draw during active read/write cycles at 10 ns timing |
| Standby current (max) | 40 mA (TTL mode); sets minimum system power budget when chip is deselected but powered |
| Data retention voltage (min) | 2.0 V; allows low-power hold mode during suspend states while preserving memory contents |
| Input/output compatibility | TTL-compatible; eliminates need for level-shifting circuitry when interfacing with 5 V microcontrollers or FPGAs |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (Thin Small Outline Package, Type II), surface-mount, gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus; selects one of 256k words; no internal latching - synchronous with CS#/WE# edges |
| I/O1–I/O16 | Data input/output | 16-bit bidirectional data bus; direction controlled by WE#, CS#, and OE#; high-impedance when disabled |
| CS# | Chip select | Active-low enable; device enters active mode only when CS# = L; all other controls ignored when CS# = H |
| OE# | Output enable | Active-low output gate; controls data bus drivers; does not affect write path when WE# = L |
| WE# | Write enable | Active-low write strobe; initiates write cycle when CS# = L and WE# = L; determines data capture timing |
| UB# / LB# | Upper/lower byte select | Independent active-low enables for I/O9–I/O16 (UB#) and I/O1–I/O8 (LB#); supports 8-bit partial writes |
| VCC | Power supply | Single 5 V supply pin; center-placed for reduced power distribution inductance and improved noise immunity |
| VSS | Ground | Ground reference; center-placed adjacent to VCC for symmetrical power delivery and minimized ground bounce |
| NC | No connection | Unbonded pin; must remain unconnected on PCB; no internal function or electrical tie |
Key Features
| Feature | Design Value |
|---|---|
| Single 5 V supply operation | Eliminates dual-rail design complexity and reduces BOM count in legacy 5 V embedded systems |
| Byte-selectable read/write | Enables efficient 8-bit updates without disturbing adjacent bytes - critical for protocol stack buffers and descriptor tables |
| Equal access and cycle times | Simplifies timing margin analysis: tRC = tAA = 10 ns ensures deterministic bus arbitration and predictable throughput |
| Direct TTL compatibility | Removes need for external bus transceivers or level shifters when interfacing with 5 V MCUs, CPLDs, or ASICs |
| Center VCC/VSS pinout | Reduces simultaneous switching noise (SSN) and improves signal integrity in high-density memory subsystem layouts |
Applications
| Industrial PLC Memory Buffer | Legacy Embedded System Cache |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers where deterministic latency and byte-granular updates are required. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between fieldbus interface ASIC and main CPU; handles burst reads/writes with sub-10 ns timing predictability. Use Value: 10 ns access time and LB#/UB# control reduce cycle overhead by enabling partial register updates without full-word rewrites. |
Use Scenario: Instruction/data cache for aging 5 V microcontrollers (e.g., Intel 80C188, Motorola 68EC000) in aerospace or medical equipment. IC Role / Device Role / Timing Role: High-speed off-chip cache memory; replaces slower DRAM or EPROM in boot-critical paths. Use Value: Fully static operation eliminates refresh circuitry; TTL compatibility avoids glue logic, reducing board area and failure points. |
| Test Equipment Data Capture | Communications Protocol Stack Buffer |
Use Scenario: High-throughput waveform capture in digital oscilloscopes and logic analyzers requiring burst-mode memory writes at >100 MHz effective rate. IC Role / Device Role / Timing Role: Dual-port-like write buffer synchronized to sampling clock; CS#/WE# timing tightly coordinated with ADC trigger. Use Value: 10 ns tWC and tAW allow reliable capture at 100 MHz sustained write bursts without wait states. |
Use Scenario: Frame assembly/disassembly buffer in serial communication modules handling HDLC, PPP, or custom packet protocols. IC Role / Device Role / Timing Role: Shared memory workspace for DMA engines and protocol processors; supports concurrent read (CPU) and write (UART/FIFO) access. Use Value: Byte-select capability enables efficient header/footer manipulation without overwriting payload data - minimizing software overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXIT | 4 Mbit (256K × 16), 10 ns access, 3.3 V supply only; LVCMOS I/O levels; different pinout (54-pin TSOP II) | Requires level-shifting or 3.3 V system redesign; incompatible with 5 V TTL buses without translators | Select only if migrating to 3.3 V architecture and redesigning PCB layout for 54-pin footprint |
| AS6C4008-10PCN | 4 Mbit (256K × 16), 10 ns access, 5 V supply; TTL-compatible; 44-pin SOJ (not TSOPII); slightly higher ISB (55 mA) | Same electrical interface but different mechanical form factor - SOJ requires wave-solder or specialized reflow profile | Choose for through-hole or SOJ-based legacy production lines; verify thermal pad clearance and solder joint reliability |
Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10PCN, the R1RW0416DSB-0PR#S1 uniquely combines 5 V TTL compatibility, 44-pin TSOPII surface-mount packaging, and guaranteed 10 ns performance in a single Renesas-qualified part - simplifying qualification for industrial 5 V systems without voltage or footprint compromise.
Availability
R1RW0416DSB-0PR#S1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy embedded system caches, test equipment data capture subsystems, and communications protocol stack buffers requiring stable component supply across extended production lifecycles.
Supply support for R1RW0416DSB-0PR#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series - including R1RW0416DSB-0PR#S1 - was designed specifically for high-reliability 5 V embedded systems needing deterministic, low-latency memory access without refresh overhead or voltage translation.
FAQ
What is the maximum access time specification for R1RW0416DSB-0PR#S1?
The R1RW0416DSB-0PR#S1 has a maximum access time of 10 ns, measured as tAA (address access time) under conditions of VCC = 5.0 V ±10% and operating temperature 0 to +70°C. This value is guaranteed across the full commercial temperature range and applies specifically to the 10 ns version indicated in the part number suffix "-0PR". The R1RW0416DSB-0PR#S1 does not share timing specs with the 12 ns variants.
Does R1RW0416DSB-0PR#S1 support partial-byte writes?
Yes, the R1RW0416DSB-0PR#S1 supports partial-byte writes via dedicated UB# (upper byte) and LB# (lower byte) control pins. When LB# = L and UB# = H, only I/O1–I/O8 are written; when UB# = L and LB# = H, only I/O9–I/O16 are written. This functionality is electrically verified in the AC characteristics table and operation table of the official Renesas datasheet R10DS0284EJ0100.
What is the standby current consumption of R1RW0416DSB-0PR#S1?
The R1RW0416DSB-0PR#S1 has a maximum TTL-mode standby current (ISB) of 40 mA, specified under conditions of CS# = VIH and all other inputs at VIH/VIL. This value is distinct from the lower CMOS standby currents (5 mA, 1.0 mA, 0.5 mA) reserved for L- and S-versions - the R1RW0416DSB-0PR#S1 is the Normal version and therefore uses the 40 mA ISB rating.
Is R1RW0416DSB-0PR#S1 pin-compatible with other 44-pin SRAMs like the AS6C4008?
No, the R1RW0416DSB-0PR#S1 is not pin-compatible with the AS6C4008-10PCN despite both using 44-pin packages. The R1RW0416DSB-0PR#S1 uses a 400-mil 44-pin plastic TSOPII with center VCC/VSS pinout, whereas the AS6C4008 uses a 44-pin SOJ with different pin assignments (e.g., VCC at corner, no dedicated UB#/LB# pins). Direct substitution would require PCB redesign.
What is the minimum supply voltage required to retain data in R1RW0416DSB-0PR#S1?
The R1RW0416DSB-0PR#S1 guarantees data retention down to VCC = 2.0 V minimum, provided CS# remains within VCC − 0.2 V to VCC and input voltages stay within defined noise margins. This specification is explicitly stated in the Low VCC Data Retention Characteristics table of the Renesas datasheet R10DS0284EJ0100 and applies to the Normal version (R1RW0416DSB-0PR#S1).
R1RW0416DSB-0PR#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-0PR#S1 FAQ
1.How can I place an order for R1RW0416DSB-0PR#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-0PR#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-0PR#S1 reliable?
The price and inventory of R1RW0416DSB-0PR#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-0PR#S1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-0PR#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-0PR#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-0PR#S1?
R1RW0416DSB-0PR#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-0PR#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-0PR#S1?
For technical support, including R1RW0416DSB-0PR#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-0PR#S1 requirements.
6.How does Aetrix verify that R1RW0416DSB-0PR#S1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-0PR#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-0PR#S1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-0PR#S1?
All R1RW0416DSB-0PR#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-0PR#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-0PR#S1 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-0PR#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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