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Renesas R1RW0416DSB-2LR#B0
- Part No.:
- R1RW0416DSB-2LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-2LR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,919
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Product details
Overview
R1RW0416DSB-2LR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply with 12 ns maximum access time and TTL-compatible I/O. It features byte-selectable read/write control (UB#/LB#), center VCC/VSS pinout, and low-power data retention down to 2.0 V - deployed in cache and buffer memory subsystems for industrial computing and embedded controllers.
For engineers reviewing the R1RW0416DSB-2LR#B0 datasheet, R1RW0416DSB-2LR#B0 pinout, R1RW0416DSB-2LR#B0 application, or R1RW0416DSB-2LR#B0 equivalent, key selection criteria include 44-pin TSOPII package compatibility, 16-bit parallel interface timing margins, standby current ≤5 mA (CMOS mode), and guaranteed data retention at 2.0 V for battery-backed systems.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with no clock or refresh required. Its dual-byte enable (UB#/LB#) supports independent 8-bit access within the 16-bit data bus, enabling efficient partial-word transfers without external logic.
It uses center VCC/VSS pin arrangement for improved power distribution and signal integrity on dense PCB layouts. The device operates across 0°C to +70°C and complies with Standard-grade quality classification per Renesas' product grading system, targeting office equipment, industrial robots, and communications infrastructure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - supports 64 KB of wide-data storage per chip in memory-mapped systems |
| Access time | 12 ns max - enables integration into 83 MHz synchronous bus interfaces with adequate setup/hold margin |
| Supply voltage | 3.3 V ± 0.3 V - compatible with standard LVTTL and LVCMOS 3.3 V I/O domains |
| Operating current | 130 mA max - defines thermal budget for multi-SRAM memory banks in compact enclosures |
| CMOS standby current | 5 mA max - allows low-power sleep modes in portable or energy-constrained applications |
| Data retention voltage | 2.0 V min - ensures nonvolatile data hold during brown-out or backup-battery operation |
| Package | 400-mil 44-pin plastic TSOPII (44P3W-H) - surface-mount compatible with standard reflow profiles and IPC-7351B footprints |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (44P3W-H), JEDEC-standard thin small-outline package with gull-wing leads, 0.8 mm lead pitch, and 10.16 mm × 18.4 mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256-kword decoding; A0 = LSB, A17 = MSB |
| I/O1–I/O8 | Lower data byte I/O | Bi-directional 8-bit data path enabled by LB#; driven high-Z when LB# = VIH |
| I/O9–I/O16 | Upper data byte I/O | Bi-directional 8-bit data path enabled by UB#; driven high-Z when UB# = VIH |
| CS# | Chip select | Active-low enable controlling all internal operations; must be stable before address or control transitions |
| OE# | Output enable | Active-low control for output drivers only; does not affect write or standby states |
| WE# | Write enable | Active-low signal initiating write cycles; sampled with CS# and byte selects to determine operation type |
| UB#, LB# | Byte select controls | Independent active-low enables for upper/lower 8-bit data lanes; support partial writes without masking logic |
| VCC, VSS | Power and ground | Center-placed dual VCC/VSS pair minimizes IR drop and improves noise immunity across wide data bus |
| NC | No connection | Pin 23 is unconnected; must remain floating or tied to ground per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks, no refresh cycles required - eliminates timing-critical controller overhead and simplifies FPGA/CPU interface design |
| TTL-compatible I/O | All inputs accept 0.8 V/2.0 V thresholds and outputs drive 8 mA sink / 4 mA source - interoperable with legacy 3.3 V microcontrollers without level shifters |
| Byte-selectable access | Independent UB#/LB# control enables 8-bit sub-word reads/writes - reduces bus contention and supports mixed-width peripheral interfacing |
| Low-voltage data retention | Guaranteed operation down to 2.0 V VCC with ≤200 µA retention current - supports seamless transition to battery backup without data loss |
| Center VCC/VSS pinout | Power pins placed centrally reduce simultaneous switching noise and improve signal integrity on 16-bit parallel buses |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Data Cache |
|---|---|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: High-speed parallel SRAM providing zero-wait-state access for CPU and DMA engines during cyclic I/O processing. Use Value: 12 ns access time ensures sub-microsecond response to fieldbus interrupts; 16-bit width matches common industrial processor data paths. | Use Scenario: Temporary frame storage in portable ultrasound or X-ray digitizers where power interruption must not corrupt acquired image buffers. IC Role / Device Role / Timing Role: Battery-backed memory holding raw pixel data during power-fail transitions and recovery sequences. Use Value: 2.0 V data retention threshold and 0.2 mA S-version standby current extend backup runtime while preserving image fidelity. |
| Telecom Line Card Packet Buffer | Automotive ADAS Pre-Processing Cache |
Use Scenario: Storing fragmented Ethernet or TDM packets in carrier-grade line cards prior to protocol stack assembly or forwarding. IC Role / Device Role / Timing Role: Low-latency SRAM acting as first-level packet staging buffer between PHY and network processor. Use Value: 44-pin TSOPII footprint enables high-density placement near SerDes interfaces; 130 mA active current fits within thermal envelope of fanless chassis. | Use Scenario: Caching radar point-cloud preprocessing results in vision-based driver assistance modules operating in extended temperature environments. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time DSP kernels performing object clustering and trajectory prediction. Use Value: 0–70°C industrial temp range and 12 ns timing meet automotive infotainment subsystem requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-45ZAXI | 4 Mbit (256k × 16), 45 ns access, 3.3 V, 44-pin TSOP II - slower but higher noise immunity and wider temp range (−40°C to +85°C) | Suitable for extended-temperature industrial gateways where speed margin is relaxed | Select when thermal robustness outweighs access-time priority and board layout accommodates same footprint |
| IS61LV25616AL-10TLI | 4 Mbit (256k × 16), 10 ns access, 3.3 V, 44-pin TSOP II - faster but higher 150 mA ICC and no S-version ultra-low standby | Better for high-throughput data acquisition where cycle time dominates power budget | Choose when system demands sub-10 ns latency and can manage increased thermal load and standby current |
Compared with CY62148EV30LL-45ZAXI, R1RW0416DSB-2LR#B0 delivers 3.75× faster access at identical density and package, but trades off extended temperature rating; versus IS61LV25616AL-10TLI, it offers lower standby power (5 mA vs. 25 mA) and guaranteed 2.0 V retention, making it preferable for battery-assisted designs despite 2 ns slower access.
Availability
R1RW0416DSB-2LR#B0 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging data caches, and telecom line card packet buffers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for R1RW0416DSB-2LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The R1RW0416D Series was designed for high-speed, wide-bit-width memory applications such as cache and buffer subsystems in systems demanding deterministic timing, low power consumption, and reliable data retention under voltage fluctuation.
FAQ
What is the operating temperature range for R1RW0416DSB-2LR#B0?
R1RW0416DSB-2LR#B0 is specified for operation from 0°C to +70°C ambient temperature. This industrial-grade range aligns with Renesas' Standard quality classification and suits applications including office equipment, communications infrastructure, and industrial automation systems where environmental control is present but not extreme.
Does R1RW0416DSB-2LR#B0 support true 16-bit parallel access?
Yes, R1RW0416DSB-2LR#B0 supports full 16-bit parallel access via I/O1–I/O16 pins. When both UB# and LB# are asserted low, the entire 16-bit word is read or written simultaneously. Independent byte enables allow selective 8-bit operations without external gating logic, preserving bus efficiency.
What is the minimum supply voltage required to retain data in R1RW0416DSB-2LR#B0?
The minimum supply voltage for guaranteed data retention in R1RW0416DSB-2LR#B0 is 2.0 V, as confirmed in the Low VCC Data Retention Characteristics section. This applies specifically to L- and S-versions like R1RW0416DSB-2LR#B0 and enables reliable operation during brown-out or battery-backup conditions.
Is R1RW0416DSB-2LR#B0 pin-compatible with other devices in the R1RW0416D series?
Yes, R1RW0416DSB-2LR#B0 shares identical 44-pin TSOPII (44P3W-H) pinout and signal mapping with all R1RW0416DSB-x variants (e.g., -0PR, -2PR, -2SR). Differences are limited to access time grade and internal power optimization - allowing direct substitution within the same package family when timing and power budgets permit.
What are the key DC electrical characteristics of R1RW0416DSB-2LR#B0?
Key DC specs for R1RW0416DSB-2LR#B0 include: VCC = 3.3 V ± 0.3 V; operating current ≤130 mA; CMOS standby current ≤5 mA; TTL standby current ≤40 mA; input/output leakage ≤2 µA; VOL ≤0.4 V (IOL = 8 mA); VOH ≥2.4 V (IOH = −4 mA). These values are validated across 0°C to +70°C per the REJ03C0107-0200 datasheet.
R1RW0416DSB-2LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-2LR#B0 FAQ
1.How can I place an order for R1RW0416DSB-2LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-2LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-2LR#B0 reliable?
The price and inventory of R1RW0416DSB-2LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-2LR#B0 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-2LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-2LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-2LR#B0?
R1RW0416DSB-2LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-2LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-2LR#B0?
For technical support, including R1RW0416DSB-2LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-2LR#B0 requirements.
6.How does Aetrix verify that R1RW0416DSB-2LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-2LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-2LR#B0 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-2LR#B0?
All R1RW0416DSB-2LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-2LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-2LR#B0 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-2LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DSB-2LR#B0 Tags
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