Renesas R1RW0416DSB-2LR#D1

Overview

R1RW0416DSB-2LR#D1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 12ns max access time, 5mA max CMOS standby current, and L-version low-power data retention down to 2.0V. It serves as cache or buffer memory in embedded systems requiring wide-bit-width, zero-clock, TTL-compatible SRAM with battery backup capability.

For engineers reviewing the R1RW0416DSB-2LR#D1 datasheet, R1RW0416DSB-2LR#D1 pinout, R1RW0416DSB-2LR#D1 application, or R1RW0416DSB-2LR#D1 equivalent, this page delivers verified specifications, package mapping, byte-selectable I/O architecture, low-voltage retention behavior, and direct alternatives for industrial control, telecom infrastructure, and legacy system upgrades.

Technical Context

The R1RW0416DSB-2LR#D1 implements a fully static 6-transistor memory cell array with center VCC/VSS pinout, enabling stable operation without clocks or refresh cycles. Its dual-byte select (UB#/LB#) architecture supports independent 8-bit access to upper and lower data words, while CS#/OE#/WE# control logic ensures deterministic read/write timing under TTL-level signaling.

As an L-version device, it guarantees 0.8mA max CMOS standby current and 0.4mA max data retention current at VCC ≥ 2.0V - critical for battery-backed applications where power budgeting below 1mA is mandatory. All DC and AC parameters are specified over 0°C to +70°C with VCC = 3.3V ±0.3V.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (thin shrink small outline package, Type II), lead pitch 0.8 mm, body width 10.16 mm, compliant with JEDEC MO-153.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with R1RW0416DSB-2LR#D1, CY62148EV30LL-45ZAXI trades speed and power efficiency for broader temperature tolerance, while IS61LV25616AL-10TLI delivers faster access at the cost of unusable standby current for battery-backed retention - making R1RW0416DSB-2LR#D1 uniquely suited for low-power, 12ns-critical, commercial-temp embedded buffers.

Availability

R1RW0416DSB-2LR#D1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card caches, medical imaging control modules, and automotive diagnostic ECUs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for R1RW0416DSB-2LR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RW0416D Series was designed specifically for high-density, low-latency, battery-backed memory applications in space-constrained embedded systems - emphasizing static operation, byte-select flexibility, and ultra-low standby power without compromising 16-bit parallel bandwidth.

FAQ

What is the guaranteed data retention voltage for R1RW0416DSB-2LR#D1?

The R1RW0416DSB-2LR#D1 guarantees data retention down to 2.0 V minimum VCC, a specification confirmed for its L-version configuration. This enables reliable memory hold during brown-out events or battery fallback scenarios. The device draws ≤ 0.8 mA in CMOS standby and ≤ 0.4 mA in data retention mode at this voltage, making R1RW0416DSB-2LR#D1 suitable for systems with supercapacitor or coin-cell backup rails.

Does R1RW0416DSB-2LR#D1 require external clocks or refresh signals?

No, R1RW0416DSB-2LR#D1 is a fully static RAM and requires no clocks, refresh cycles, or timing strobes. Its 6-transistor memory cell design maintains data indefinitely as long as power and valid control signals are applied. All operations are controlled solely by CS#, OE#, WE#, UB#, and LB# - eliminating timing controller complexity and dynamic power overhead associated with DRAM or pseudo-static RAM.

What package type does R1RW0416DSB-2LR#D1 use, and is it RoHS-compliant?

R1RW0416DSB-2LR#D1 uses a 400-mil 44-pin plastic TSOPII package (JEDEC MO-153), with 0.8 mm lead pitch and 10.16 mm body width. Per Renesas documentation and product change notices, this variant is RoHS-compliant and halogen-free. The center VCC/VSS pin arrangement improves power integrity and reduces ground bounce in high-speed 16-bit bus environments.

How does byte-select functionality work on R1RW0416DSB-2LR#D1?

R1RW0416DSB-2LR#D1 implements independent upper and lower byte control via UB# and LB# pins. When LB# = L and CS# = L, I/O1–I/O8 become active for 8-bit reads/writes; when UB# = L and CS# = L, I/O9–I/O16 activate. Both may be asserted simultaneously for full 16-bit access. This eliminates read-modify-write sequences for partial-word updates - a key advantage in R1RW0416DSB-2LR#D1 for real-time control and packet processing.

Is R1RW0416DSB-2LR#D1 pin-compatible with other devices in the R1RW0416D Series?

Yes, all R1RW0416D Series variants - including R1RW0416DSB-2LR#D1, R1RW0416DSB-0PR, and R1RW0416DGE-2PR - share identical 44-pin TSOPII or SOJ footprints and pinouts. The differences lie exclusively in access time (10ns vs. 12ns), version (Normal/L/S), and electrical specs (standby/retention current). This allows drop-in replacement within the same package family without PCB redesign.