Renesas R1RW0416DSB-2PI#B0

Overview

R1RW0416DSB-2PI#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply with 12 ns maximum access time, 130 mA max operating current, and −40 to +85°C industrial temperature range. It serves as cache or buffer memory in embedded control systems requiring wide data bus width and deterministic timing.

For engineers reviewing the R1RW0416DSB-2PI#B0 datasheet, R1RW0416DSB-2PI#B0 pinout, R1RW0416DSB-2PI#B0 application, or R1RW0416DSB-2PI#B0 equivalent, this page delivers verified package mapping (400-mil 44-pin plastic TSOPII), byte-selectable I/O architecture, TTL-compatible interface levels, low-power CMOS standby mode (5 mA), and direct replacement context for legacy SRAM-based memory subsystems.

Technical Context

This SRAM implements a fully static 6-transistor memory cell array with no clock or refresh required. Its dual-byte enable (UB#/LB#) supports independent 8-bit access to upper and lower data words without external logic.

The device uses center VCC/VSS pinout for improved power distribution and signal integrity. All inputs and outputs are directly TTL-compatible-VIH = 2.0 V min, VIL = 0.8 V max-with output drive capability of VOH ≥ 2.4 V at −4 mA and VOL ≤ 0.4 V at 8 mA.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (44P3W-H), surface-mount, gull-wing leads, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with R1RW0416DSB-2PI#B0, CY62167EV30LL-45ZSXI trades speed for voltage flexibility, while IS61LV25616AL-12MLI matches timing and voltage but requires revalidation of power delivery due to corner-placed VCC/VSS pins.

Availability

R1RW0416DSB-2PI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, avionics display caching, and test equipment pattern memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R1RW0416DSB-2PI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RW0416DI Series was designed as a high-reliability, wide-temperature SRAM family targeting cache and buffer roles in mission-critical embedded systems where deterministic timing and long-term supply stability are essential.

FAQ

What is the maximum operating frequency supported by R1RW0416DSB-2PI#B0?

R1RW0416DSB-2PI#B0 does not use a clock but supports bus cycles up to 83 MHz based on its 12 ns access and cycle times. The device operates asynchronously - timing is governed by tRC = 12 ns, tAA = 12 ns, and tWC = 12 ns - making it suitable for high-speed microprocessor local buses without synchronization overhead. R1RW0416DSB-2PI#B0 achieves this using static CMOS design with no internal timing constraints beyond these AC parameters.

Does R1RW0416DSB-2PI#B0 require external refresh circuitry?

No, R1RW0416DSB-2PI#B0 is a fully static RAM and requires no refresh cycles or external refresh control. Its 6-transistor memory cell retains data indefinitely as long as power is applied and operating conditions remain within specification. This eliminates timing-critical refresh management in firmware or hardware, simplifying system design. R1RW0416DSB-2PI#B0 maintains data integrity across its full −40°C to +85°C range without refresh intervention.

Can R1RW0416DSB-2PI#B0 be used with 5 V logic interfaces?

R1RW0416DSB-2PI#B0 is strictly a 3.3 V device: VIH max = VCC + 0.5 V (≤ 4.1 V), VIL min = −0.5 V, and absolute max input voltage is VCC + 0.5 V. Applying 5 V signals risks permanent damage. Interface with 5 V systems requires level-shifting ICs such as TXB0108 or discrete resistor-divider networks validated for timing compliance. R1RW0416DSB-2PI#B0 must never be directly connected to 5 V buses.

What is the function of the NC pins on R1RW0416DSB-2PI#B0?

The NC (No Connection) pins on R1RW0416DSB-2PI#B0 are internally unbonded and electrically floating. They must remain unconnected - no pull-up, pull-down, or routing - to prevent parasitic coupling or ESD path formation. Datasheet REJ03C0109-0201 Rev.2.01 explicitly prohibits termination or loading of NC pins. R1RW0416DSB-2PI#B0 reliability depends on adherence to this constraint during PCB layout and assembly.

How does the byte-select feature improve system efficiency in R1RW0416DSB-2PI#B0?

R1RW0416DSB-2PI#B0's independent UB# and LB# controls allow writing to either upper or lower 8-bit byte without affecting the other - eliminating need for read-modify-write sequences or external byte masking logic. This reduces bus traffic and CPU overhead in 16-bit systems handling mixed-width data. R1RW0416DSB-2PI#B0 achieves true 8-bit granularity access while maintaining full 16-bit bandwidth capability.