Renesas R1RW0416DSB-2PI#S1

Overview

R1RW0416DSB-2PI#S1 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 5.0V ±10% supply with 12ns max access time, TTL-compatible I/O, and center V_CC/V_SS pinout-designed for cache and buffer memory in high-performance computing and industrial control systems.

For engineers reviewing the R1RW0416DSB-2PI#S1 datasheet, R1RW0416DSB-2PI#S1 pinout, R1RW0416DSB-2PI#S1 application, or R1RW0416DSB-2PI#S1 equivalent, key selection criteria include 12ns read/write cycle timing, byte-selectable 16-bit I/O, 5mA CMOS standby current, and 400-mil 44-pin TSOPII packaging for space-constrained PCB layouts.

Technical Context

The R1RW0416DSB-2PI#S1 implements a fully static 6-transistor memory cell architecture with no clock or refresh required, supporting independent upper- and lower-byte write operations via UB# and LB# control lines. Its operation table defines eight distinct modes-including full-word, upper-byte, and lower-byte reads/writes-each with defined V_CC current draw and I/O states.

Timing compliance follows strict AC specifications: t_RC = 12ns max, t_AA = 12ns max, t_OE = 6ns max, and t_WP = 8ns min, all tested at 5.0V ±10% and 0°C to +70°C. Data retention is guaranteed down to V_CC = 2.0V with ≤200μA current draw in S-version configuration.

Key Specifications

Pinout & Package

Package: 400-mil 44-pin plastic Thin Small Outline Package, Type II (TSOPII), surface-mount, lead-free (Pb-free) per RoHS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RW0416DSB-2PI#S1 provides native 5V operation, center V_CC/V_SS noise reduction, and verified 2V data retention-making it optimal for industrial systems requiring robustness across voltage sags and thermal cycling.

Availability

R1RW0416DSB-2PI#S1 is available at Aetrix Electronics and suitable for cache memory, industrial PLC buffer, network packet buffer, and medical imaging frame store applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for R1RW0416DSB-2PI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The R1RP0416D Series was developed to deliver high-density, low-latency SRAM for real-time embedded systems where deterministic timing, 5V compatibility, and data retention under brown-out conditions are critical design requirements.

FAQ

What is the maximum operating frequency supported by the R1RW0416DSB-2PI#S1?

The R1RW0416DSB-2PI#S1 does not operate on a clock signal-it is a fully static RAM. Its 12ns access time supports bus frequencies up to approximately 83 MHz (1/12ns) in systems with zero wait states. Actual achievable bandwidth depends on controller timing margins, bus loading, and cycle overlap efficiency, but the R1RW0416DSB-2PI#S1 guarantees t_RC ≤ 12ns and t_AA ≤ 12ns across its full operating range.

Does the R1RW0416DSB-2PI#S1 support independent upper- and lower-byte writes?

Yes, the R1RW0416DSB-2PI#S1 supports independent byte writes via dedicated UB# (upper byte, I/O9–I/O16) and LB# (lower byte, I/O1–I/O8) control inputs. When only one byte select is asserted low with CS# and WE# low, only that 8-bit segment is written; the other remains unchanged. This capability is confirmed in the Operation Table on page 4 of the R10DS0284EJ0100 datasheet.

What is the minimum supply voltage at which the R1RW0416DSB-2PI#S1 retains data?

The R1RW0416DSB-2PI#S1 retains stored data down to V_CC = 2.0 V, as specified in the Low V_CC Data Retention Characteristics table (page 12). This applies only to the S-version variant, which the suffix "S" in R1RW0416DSB-2PI#S1 confirms. At 2.0V, data retention current is guaranteed ≤200 μA, enabling reliable hold functionality during brown-out events.

Is the R1RW0416DSB-2PI#S1 pin-compatible with other devices in the R1RP0416D Series?

Yes, all R1RP0416D Series variants-including R1RW0416DSB-2PI#S1-share identical 44-pin TSOPII pinouts and signal assignments. Differences are limited to access time (10ns vs. 12ns), version (Normal/L/S), and corresponding DC parameters (standby current, retention specs). The Pin Arrangement diagram on page 2 and Ordering Information table on page 1 confirm uniform pin mapping across the family.

What package type is used for the R1RW0416DSB-2PI#S1?

The R1RW0416DSB-2PI#S1 uses a 400-mil 44-pin plastic Thin Small Outline Package, Type II (TSOPII), as explicitly stated in the Ordering Information table (page 1) and Pin Arrangement section (page 2) of the R10DS0284EJ0100 datasheet. This surface-mount package features gull-wing leads, RoHS-compliant finish, and center V_CC/V_SS pin distribution.