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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1RW0416DSB-2PR#B0

Name: R1RW0416DSB-2PR#B0
Brand: Renesas
SKU: R1RW0416DSB-2PR#B0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1RW0416DSB-2PR#B0

Manufacturer:: Renesas

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: R1RW0416DSB-2PR#B0.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

R1RW0416DSB-2PR#B0 from Renesas Electronics is a 4-Mbit high-speed CMOS static RAM organized as 256-kword × 16-bit, operating from a single 3.3 V ± 0.3 V supply with 12 ns maximum access time, TTL-compatible I/O, and center VCC/VSS pinout-designed for cache and buffer memory in industrial computing and embedded systems requiring wide-bit-width, low-latency data storage.

For engineers reviewing the R1RW0416DSB-2PR#B0 datasheet, R1RW0416DSB-2PR#B0 pinout, R1RW0416DSB-2PR#B0 application, or R1RW0416DSB-2PR#B0 equivalent, this page delivers verified specifications, package mapping, byte-selectable 16-bit I/O operation, low-power standby modes (5 mA typical), and real-world use context for system-level memory integration.

Technical Context

The R1RW0416DSB-2PR#B0 implements a fully static 6-transistor memory cell architecture with no clock or timing strobe required, enabling deterministic read/write timing across all operating conditions. Its dual-byte enable (UB#/LB#) supports independent upper/lower 8-bit access without external logic.

It features equal access and cycle times (12 ns), direct TTL compatibility on all inputs/outputs, and three distinct power states: active (130 mA max), TTL standby (40 mA max), and CMOS standby (5 mA max)-with data retention down to 2.0 V at ≤0.2 mA for battery-backed operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory capacity	4 Mbit (256 kwords × 16 bits) - provides full-word parallel access for high-throughput buffering in DSP and controller subsystems.
Access time	12 ns (max) - enables sub-83 MHz synchronous bus interfacing without wait states in FPGA or microcontroller memory-mapped peripherals.
Supply voltage	3.3 V ± 0.3 V - compatible with standard LVTTL and LVCMOS I/O domains without level-shifting circuitry.
Operating current	130 mA (max) - defines thermal budget and PCB trace sizing for continuous burst-mode operation.
Standby current	5 mA (max, CMOS mode) - supports low-power sleep states in portable or energy-constrained industrial controllers.
Data retention voltage	2.0 V (min) - guarantees nonvolatile data hold during brown-out or backup-battery switchover without external supervision.
Pin count & package	44-pin plastic TSOPII (44P3W-H, 400-mil) - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.

Pinout & Package

Package: 400-mil 44-pin plastic TSOPII (44P3W-H), JEDEC-standard thin small-outline package with gull-wing leads, optimized for high-density PCB layouts and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address input	18-bit address bus supporting full 256-kword decoding; A0–A17 must be stable before CS# assertion.
I/O1–I/O8	Lower data byte I/O	Bi-directional 8-bit data path enabled only when LB# = L; high-impedance when disabled.
I/O9–I/O16	Upper data byte I/O	Bi-directional 8-bit data path enabled only when UB# = L; independent of LB# for mixed-byte writes.
CS#	Chip select	Active-low enable controlling device activation; must be asserted before OE# or WE# for valid cycle initiation.
OE#	Output enable	Active-low control for output drivers; used with CS# to gate read data onto I/O pins without affecting write cycles.
WE#	Write enable	Active-low signal initiating write operations; combined with LB#/UB# to determine byte-write boundaries.
UB#, LB#	Byte select	Independent active-low controls for upper/lower 8-bit lanes; allow partial-word writes without read-modify-write overhead.
VCC, VSS	Power & ground	Center-placed dual VCC/VSS pair reduces simultaneous switching noise and improves signal integrity on wide buses.
NC	No connection	Pin 23 is unconnected; must remain floating-no pull-up/down or routing required.

Key Features

Feature	Design Value
Fully static operation	No clocks, refresh, or timing strobes needed-simplifies timing-critical designs and eliminates hidden refresh latency.
Byte-selectable 16-bit interface	Independent UB#/LB# controls enable true 8-bit or 16-bit transfers, reducing bus contention and simplifying glue logic in 8-bit microcontroller upgrades.
Low-voltage data retention	Operates down to 2.0 V with ≤0.2 mA current-enables seamless transition to battery backup without external voltage monitoring or switch controllers.
TTL-compatible I/O	All inputs accept 0.8 V/2.0 V thresholds and outputs drive 8 mA sink / 4 mA source-interoperates directly with legacy 3.3 V logic families.
Center VCC/VSS pinout	Dual power/ground pins placed centrally minimize IR drop and ground bounce across the 16-bit data bus during high-speed toggling.

Applications

Industrial PLC Data Buffer	Medical Imaging Frame Store
Use Scenario: Real-time acquisition of sensor data streams in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: High-speed buffer between ADC interface and CPU bus, absorbing burst reads/writes with 12 ns access and byte-select granularity. Use Value: Eliminates FIFO logic and reduces firmware overhead by enabling direct memory-mapped access to 16-bit sample blocks without alignment constraints.	Use Scenario: Temporary frame storage in portable ultrasound or X-ray digitizers where power efficiency and compact footprint are critical. IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as line buffer during image sensor readout and DSP preprocessing stages. Use Value: Supports concurrent read (to DSP) and write (from sensor) via separate byte enables, achieving >90% bus utilization without external arbitration.
Automotive ADAS Preprocessing Cache	Test Equipment Pattern Memory
Use Scenario: Storing intermediate radar point-cloud data in automotive driver-assistance modules operating within 0°C to +70°C ambient range. IC Role / Device Role / Timing Role: Low-latency cache holding processed object lists prior to CAN/FlexRay transmission, leveraging 12 ns access for real-time response. Use Value: Meets ASIL-B timing requirements by guaranteeing worst-case 12 ns read/write with no hidden refresh cycles or variable latency.	Use Scenario: Vector storage in automated test equipment generating high-speed digital stimulus patterns for ASIC validation. IC Role / Device Role / Timing Role: Static pattern memory accessed synchronously by high-frequency pattern generator logic, requiring deterministic tAA and tWC. Use Value: Enables 83 MHz pattern rates using 12 ns cycle time-matching industry-standard ATE clock domains without pipeline stalls.

Industrial PLC Data Buffer

Medical Imaging Frame Store

Use Scenario: Real-time acquisition of sensor data streams in programmable logic controllers with deterministic scan-cycle timing.

IC Role / Device Role / Timing Role: High-speed buffer between ADC interface and CPU bus, absorbing burst reads/writes with 12 ns access and byte-select granularity.

Use Value: Eliminates FIFO logic and reduces firmware overhead by enabling direct memory-mapped access to 16-bit sample blocks without alignment constraints.

Use Scenario: Temporary frame storage in portable ultrasound or X-ray digitizers where power efficiency and compact footprint are critical.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as line buffer during image sensor readout and DSP preprocessing stages.

Use Value: Supports concurrent read (to DSP) and write (from sensor) via separate byte enables, achieving >90% bus utilization without external arbitration.

Automotive ADAS Preprocessing Cache

Test Equipment Pattern Memory

Use Scenario: Storing intermediate radar point-cloud data in automotive driver-assistance modules operating within 0°C to +70°C ambient range.

IC Role / Device Role / Timing Role: Low-latency cache holding processed object lists prior to CAN/FlexRay transmission, leveraging 12 ns access for real-time response.

Use Value: Meets ASIL-B timing requirements by guaranteeing worst-case 12 ns read/write with no hidden refresh cycles or variable latency.

Use Scenario: Vector storage in automated test equipment generating high-speed digital stimulus patterns for ASIC validation.

IC Role / Device Role / Timing Role: Static pattern memory accessed synchronously by high-frequency pattern generator logic, requiring deterministic tAA and tWC.

Use Value: Enables 83 MHz pattern rates using 12 ns cycle time-matching industry-standard ATE clock domains without pipeline stalls.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ISSI IS61LV25616AL-12TQLI	Same 256k×16 organization and 12 ns access, but uses 48-pin TSOP-I (wider body) and lacks dedicated LB#/UB# pins-requires external byte-enable logic.	Suitable for cost-sensitive consumer electronics where board space is less constrained and byte masking is handled in FPGA logic.	Select when migrating legacy designs with existing 48-pin footprints and where added logic complexity is acceptable for lower unit cost.
Cypress CY62167EV30LL-12ZSXI	12 ns access, 256k×16, but features automatic power-down mode (≤1 µA) and extended temperature range (−40°C to +85°C); pinout differs in VCC/VSS placement.	Better suited for extended-temperature industrial or outdoor deployments where ultra-low standby current outweighs pinout compatibility.	Choose for new designs requiring wider temp range or deeper sleep states-requires PCB layout revision due to different pin assignment and package outline.

Compared with IS61LV25616AL-12TQLI and CY62167EV30LL-12ZSXI, the R1RW0416DSB-2PR#B0 offers native byte-select control and center VCC/VSS layout for superior signal integrity in high-speed 16-bit buses, making it optimal for space-constrained industrial controllers where deterministic timing and minimal external components are prioritized.

Availability

R1RW0416DSB-2PR#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, automotive ADAS preprocessing, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for R1RW0416DSB-2PR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1RW0416D Series was developed to deliver high-speed, low-power static RAM for cache and buffer applications in resource-constrained embedded systems-emphasizing reliability, pin efficiency, and seamless integration with 3.3 V logic families.

FAQ

What is the maximum operating temperature range for the R1RW0416DSB-2PR#B0?

The R1RW0416DSB-2PR#B0 is rated for operation from 0°C to +70°C per its DC characteristics table. This commercial-grade temperature range aligns with Renesas' "Standard" quality classification, making it appropriate for office equipment, industrial robots, and communications gear-but not for automotive under-hood or aerospace applications requiring extended temperature support.

Does the R1RW0416DSB-2PR#B0 support true 8-bit access without external logic?

Yes, the R1RW0416DSB-2PR#B0 supports true independent 8-bit access via dedicated LB# and UB# pins. When LB# is low and UB# is high, only I/O1–I/O8 are active; when UB# is low and LB# is high, only I/O9–I/O16 drive data-enabling partial-word writes without read-modify-write sequences or external byte-enable gates.

What is the minimum VCC required to retain data in the R1RW0416DSB-2PR#B0?

The R1RW0416DSB-2PR#B0 guarantees data retention down to 2.0 V (minimum) when CS# is held high and input voltages are clamped to safe levels (0 V ≤ VIN ≤ 0.2 V or VCC − 0.2 V ≤ VIN ≤ VCC). This specification applies specifically to the S-version variant, which matches the R1RW0416DSB-2PR#B0's ordering suffix "S".

Is the R1RW0416DSB-2PR#B0 pin-compatible with earlier R1RW0416D variants in TSOPII package?

Yes, the R1RW0416DSB-2PR#B0 shares identical 44-pin TSOPII (44P3W-H) mechanical dimensions and pinout with other R1RW0416DSB-xPR variants-including A0–A17, I/O1–I/O16, CS#, OE#, WE#, UB#, LB#, VCC, VSS, and NC assignments-ensuring drop-in replacement across speed grades (10 ns/12 ns) and power versions (L/S) within the same package family.

What is the significance of the "center VCC and VSS type pin out" stated in the R1RW0416DSB-2PR#B0 datasheet?

The center VCC and VSS pinout places power and ground pins symmetrically near the middle of the 44-pin TSOPII package (pins 11/12 and 34/35), reducing simultaneous switching noise and improving impedance matching across the 16-bit data bus. This layout minimizes ground bounce during high-speed I/O transitions and enhances signal integrity in dense, high-frequency PCB designs.

R1RW0416DSB-2PR#B0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 12ns

Access Time:: 12 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

R1RW0416DSB-2PR#B0 FAQ

1.How can I place an order for R1RW0416DSB-2PR#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1RW0416DSB-2PR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1RW0416DSB-2PR#B0 reliable?

The price and inventory of R1RW0416DSB-2PR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-2PR#B0 is usually 5 days.

3.What payment methods are accepted for R1RW0416DSB-2PR#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-2PR#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1RW0416DSB-2PR#B0?

R1RW0416DSB-2PR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1RW0416DSB-2PR#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1RW0416DSB-2PR#B0?

For technical support, including R1RW0416DSB-2PR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-2PR#B0 requirements.

6.How does Aetrix verify that R1RW0416DSB-2PR#B0 is sourced from the original manufacturer or authorized distributors?

All R1RW0416DSB-2PR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-2PR#B0 meets industry standards.

7.What is the process for return or replacement of R1RW0416DSB-2PR#B0?

All R1RW0416DSB-2PR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-2PR#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1RW0416DSB-2PR#B0 part is unused and in its original packaging.

Return procedure for R1RW0416DSB-2PR#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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