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Renesas R1RW0416DSB-2PR#D1
- Part No.:
- R1RW0416DSB-2PR#D1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-2PR#D1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:206
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Product details
Overview
R1RW0416DSB-2PR#D1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, operating from a single 3.3V ±0.3V supply with 12ns max access time and TTL-compatible I/O. It features center VCC/VSS pinout, byte-selectable read/write capability (UB#/LB#), and is designed for cache and buffer memory in embedded systems requiring wide data bus width and deterministic timing.
For engineers reviewing the R1RW0416DSB-2PR#D1 datasheet, R1RW0416DSB-2PR#D1 pinout, R1RW0416DSB-2PR#D1 application, or R1RW0416DSB-2PR#D1 equivalent, this page provides verified specifications, package mapping, functional pin roles, real-world use scenarios, and validated alternative parts for system-level memory design and BOM optimization.
Technical Context
The R1RW0416DSB-2PR#D1 implements a fully static 6-transistor CMOS memory cell architecture with no clock or timing strobe required. Its operation relies on asynchronous control via CS#, OE#, WE#, UB#, and LB# signals to enable independent upper/lower byte access and high-impedance output control during standby or deselect.
It supports equal access and cycle times (12ns max), direct TTL-level interfacing on all pins, and dual standby current modes: 40mA (TTL) and 5mA (CMOS), with data retention down to 2.0V at ≤400µA for non-L/S versions - confirming its suitability for battery-backed hold mode in industrial controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256 kwords × 16 bits) - supports 16-bit parallel data path without external multiplexing |
| Access time | 12 ns (max) - enables integration into 83 MHz synchronous bus systems with margin |
| Supply voltage | 3.3 V ±0.3 V - compatible with standard LVTTL and 3.3V logic families |
| Operating current | 130 mA (max) - defines power budget for active burst reads/writes in real-time buffers |
| Standby current | 5 mA (CMOS mode) - allows low-power sleep states in portable instrumentation |
| Data retention voltage | 2.0 V (min) - sustains memory contents during brown-out or backup battery operation |
| Input/Output capacitance | ≤6 pF (input), ≤8 pF (I/O) - ensures signal integrity up to 100+ MHz trace routing |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (thin small outline package, 44 leads, surface-mount).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword addressing (218 = 262,144 words) |
| I/O1–I/O16 | Data input/output | 16-bit bidirectional data bus; high-Z when CS#, OE#, LB#, or UB# inactive |
| CS# | Chip select | Active-low enable; device enters standby when high, outputs high-Z when deasserted |
| OE# | Output enable | Active-low control for output drivers; overrides WE# during read cycles |
| WE# | Write enable | Active-low write strobe; latches data on rising edge when CS# and byte selects are active |
| UB#, LB# | Upper/lower byte select | Independent 8-bit write masking; enables partial-word writes without read-modify-write |
| VCC, VSS | Power supply / Ground | Center-placed VCC/VSS pins reduce simultaneous switching noise and improve decoupling |
| NC | No connection | Unbonded pad; must remain unconnected per Renesas layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks or refresh required - eliminates timing controller overhead in FPGA- or MCU-based systems |
| Byte-selectable I/O | UB#/LB# enable independent 8-bit writes - reduces bus contention and improves DMA efficiency |
| TTL-compatible interface | All inputs/outputs meet TTL voltage thresholds - interoperable with legacy 3.3V microcontrollers without level shifters |
| Low standby current | 5 mA CMOS standby - extends battery life in always-on telemetry modules during idle periods |
| Center VCC/VSS pinout | Reduces ground bounce and supply noise - critical for stable operation in high-speed digital systems |
Applications
| Industrial PLC Data Buffer | Automotive ADAS Preprocessing Cache |
|---|---|
Use Scenario: Real-time I/O scanning and cyclic data logging in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed SRAM acting as dual-port-accessible buffer between CPU and fieldbus interface ASICs. Use Value: 12ns access time ensures sub-100ns response to interrupt-driven I/O updates, maintaining hard real-time deadlines. | Use Scenario: Temporary storage of sensor fusion outputs (radar + camera) before frame compression in autonomous driving ECUs. IC Role / Device Role / Timing Role: Low-latency cache holding intermediate image processing results prior to GPU transfer. Use Value: 16-bit bus width matches typical DSP word size, eliminating byte alignment overhead during burst transfers. |
| Medical Imaging Frame Store | Test & Measurement Digitizer Memory |
Use Scenario: Capturing full-resolution ultrasound frames at 30 fps for on-device preview and DICOM export. IC Role / Device Role / Timing Role: Frame buffer SRAM interfacing directly with ADC controller and display engine. Use Value: Center VCC/VSS layout minimizes noise coupling into analog front-end, preserving SNR in diagnostic-grade imaging. | Use Scenario: High-speed waveform capture in oscilloscopes and logic analyzers with deep memory depth requirements. IC Role / Device Role / Timing Role: Primary acquisition memory synchronized to sampling clock via external address generator. Use Value: Equal access/cycle timing simplifies state-machine design for continuous streaming without dead cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TLI | 12ns access, 3.3V, 256k×16, 44-pin TSOP-II - identical timing and pinout but lower max operating current (110mA vs 130mA) | Lower power draw suits thermally constrained handheld testers; lacks Renesas' low-VCC retention spec | Select for cost-sensitive portable instruments where extended battery backup is not required |
| CY62167EV30LL-12ZSXI | 12ns access, 3.3V, 256k×16, 44-pin TSOP-II - same speed and organization, but higher standby current (15mA vs 5mA) | Higher leakage limits use in always-on remote sensors; supports wider temperature range (−40°C to +85°C) | Choose for automotive under-hood applications needing extended temp rating, accepting higher quiescent power |
Compared with IS61LV25616AL-12TLI and CY62167EV30LL-12ZSXI, the R1RW0416DSB-2PR#D1 delivers tighter CMOS standby current (5mA) and guaranteed 2.0V data retention - making it optimal for battery-buffered industrial controllers where power-down integrity is critical.
Availability
R1RW0416DSB-2PR#D1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ADAS preprocessing caches, and medical imaging frame stores requiring stable component supply across multi-year production cycles.
Supply support for R1RW0416DSB-2PR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RW0416D Series was developed to deliver high-speed, low-power parallel SRAM for real-time embedded systems demanding deterministic latency, wide data paths, and robust data retention - especially in battery-backed or thermally constrained environments.
FAQ
What is the maximum operating temperature range for the R1RW0416DSB-2PR#D1?
The R1RW0416DSB-2PR#D1 is rated for operation from 0°C to +70°C per its Absolute Maximum Ratings table. This commercial-grade temperature range aligns with typical industrial control and test equipment environments. The device does not support extended −40°C to +85°C operation unless explicitly qualified in a different variant - the R1RW0416DSB-2PR#D1 itself is specified only for 0°C to +70°C.
Does the R1RW0416DSB-2PR#D1 support true 16-bit simultaneous read/write operations?
Yes, the R1RW0416DSB-2PR#D1 supports full 16-bit parallel data transfer. Its I/O1–I/O16 pins operate as a unified 16-bit bidirectional bus during read and write cycles when both UB# and LB# are asserted low. Byte-select functionality allows partial writes, but full-word access is natively supported without internal serialization or timing penalties.
Is the R1RW0416DSB-2PR#D1 pin-compatible with other devices in the R1RW0416D Series?
Yes, all R1RW0416D Series variants - including R1RW0416DSB-2PR#D1, R1RW0416DSB-0PR, and R1RW0416DGE-2PR - share identical 44-pin TSOPII or SOJ footprints and pin functions. The differences are limited to access time (10ns vs 12ns), version (Normal/L/S), and package type - enabling drop-in replacement within the same package family without PCB redesign.
What is the minimum VCC required to retain data in the R1RW0416DSB-2PR#D1 during power loss?
The R1RW0416DSB-2PR#D1 guarantees data retention down to 2.0V minimum VCC when CS# is held high and input voltages are clamped near VSS or VCC. This specification applies across all versions (Normal, L, S) per the Low VCC Data Retention Characteristics table. At 2.0V, retention current remains ≤400µA, enabling reliable hold-mode operation from backup capacitors or coin cells.
How does the center VCC/VSS pin arrangement benefit PCB layout for the R1RW0416DSB-2PR#D1?
The center VCC/VSS pinout in the R1RW0416DSB-2PR#D1 reduces simultaneous switching output (SSO) noise by distributing power and ground connections symmetrically across the package. This layout lowers ground bounce and supply rail collapse during high-speed 16-bit transitions, improving signal integrity and reducing EMI - particularly valuable in dense, mixed-signal boards where analog sections coexist with high-speed digital buses.
R1RW0416DSB-2PR#D1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-2PR#D1 FAQ
1.How can I place an order for R1RW0416DSB-2PR#D1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-2PR#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-2PR#D1 reliable?
The price and inventory of R1RW0416DSB-2PR#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-2PR#D1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-2PR#D1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-2PR#D1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-2PR#D1?
R1RW0416DSB-2PR#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-2PR#D1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-2PR#D1?
For technical support, including R1RW0416DSB-2PR#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-2PR#D1 requirements.
6.How does Aetrix verify that R1RW0416DSB-2PR#D1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-2PR#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-2PR#D1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-2PR#D1?
All R1RW0416DSB-2PR#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-2PR#D1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-2PR#D1 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-2PR#D1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DSB-2PR#D1 Tags
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