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Renesas R1RW0416DSB-2PR#S1
- Part No.:
- R1RW0416DSB-2PR#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1RW0416DSB-2PR#S1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,113
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Product details
Overview
R1RW0416DSB-2PR#S1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, fabricated using CMOS 6-transistor memory cells. It delivers 12 ns maximum access time, operates from a single 5.0 V ±10% supply, and supports byte-selectable read/write operations via UB#/LB# control-ideal for cache and buffer memory in embedded computing and industrial control systems.
For engineers reviewing the R1RW0416DSB-2PR#S1 datasheet, R1RW0416DSB-2PR#S1 pinout, R1RW0416DSB-2PR#S1 application, or R1RW0416DSB-2PR#S1 equivalent, key selection criteria include TTL-compatible I/O levels, 44-pin TSOPII package constraints, low-power standby modes (5 mA CMOS), and byte-level write enable timing compliance per AC characteristics tables.
Technical Context
The R1RW0416DSB-2PR#S1 implements a fully static architecture requiring no clocks or refresh cycles, with equal access and cycle times (12 ns max). Its center VCC/VSS pinout enables balanced power distribution across the 44-pin TSOPII package.
It supports independent upper- and lower-byte writes via UB# and LB# inputs, and maintains data retention down to 2.0 V with ≤500 µA current in L-version mode-verified under bias at 0°C to +70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4 Mbit (256 kwords × 16 bits) - supports wide-data-path buffering without external data-width expansion |
| Access time | 12 ns (max) - enables direct interfacing with 80 MHz bus systems without wait states |
| Supply voltage | 5.0 V ±10% - compatible with legacy 5 V TTL logic families and mixed-voltage system rails |
| Operating current | 160 mA (max) - defines thermal budget for continuous read/write operation in compact enclosures |
| CMOS standby current | 5 mA (max) - allows low-power sleep modes in battery-backed or energy-sensitive applications |
| Data retention voltage | 2.0 V (min) - ensures nonvolatile data hold during brown-out or controlled power-down sequences |
| Package | 400-mil 44-pin plastic TSOPII - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns |
Pinout & Package
Package: 400-mil 44-pin plastic TSOPII (Thin Small Outline Package, Type II), lead pitch 0.8 mm, body width 10.16 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address input | 18-bit address bus supporting full 256-kword decoding; no address multiplexing required |
| I/O1–I/O16 | Data input/output | Bi-directional 16-bit data bus; I/O1–I/O8 = lower byte, I/O9–I/O16 = upper byte |
| CS# | Chip select | Active-low enable controlling device activation; must be stable before address or control transitions |
| OE# | Output enable | Active-low control enabling output drivers; used with CS# to gate read data onto bus |
| WE# | Write enable | Active-low signal initiating write cycles; combined with LB#/UB# to select byte lanes |
| UB# / LB# | Upper/lower byte select | Independent active-low controls allowing partial-word writes without disturbing adjacent bytes |
| VCC / VSS | Power / ground | Center-placed dual VCC and dual VSS pins minimize IR drop and improve noise immunity |
| NC | No connection | Unbonded pins; must remain unconnected per Renesas design rules |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no timing strobes required - eliminates system-level timing coordination overhead |
| TTL-compatible I/O | All inputs accept 0.8 V/2.2 V thresholds and drive 0.4 V/2.4 V outputs at 8 mA sink/4 mA source - interoperable with legacy 5 V logic |
| Byte-selectable write | Independent UB# and LB# inputs allow 8-bit granularity writes - reduces bus contention and improves efficiency in mixed-data-width systems |
| Low-power standby | 5 mA CMOS standby current (vs. 40 mA TTL mode) - extends hold time in power-gated subsystems |
| Data retention at 2 V | Maintains stored data with ≤500 µA current at VCC ≥ 2.0 V - supports graceful shutdown and backup power transitions |
Applications
| Industrial PLC Memory Buffer | Automotive Infotainment Cache |
|---|---|
Use Scenario: Real-time I/O scan buffering in programmable logic controllers where deterministic latency is critical. IC Role / Device Role / Timing Role: High-speed SRAM acting as dual-port-accessible buffer between CPU and fieldbus interface ASICs. Use Value: 12 ns access time eliminates wait states on 80 MHz processor buses, while byte-select writes reduce cycle overhead during partial register updates. | Use Scenario: Frame buffer storage for graphics overlay rendering in head-unit displays with multi-source video inputs. IC Role / Device Role / Timing Role: Dedicated 16-bit-wide memory for temporary pixel data staging prior to GPU processing. Use Value: 256-kword × 16-bit organization matches common display line widths; TTL-compatible I/O simplifies interface to legacy video controller ICs. |
| Medical Imaging Data Pipeline | Test Equipment Pattern Memory |
Use Scenario: Acquisition buffer for real-time analog-to-digital conversion streams in portable ultrasound devices. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory stage capturing raw sensor data before compression or transfer. Use Value: Equal read/write cycle times (12 ns) ensure predictable throughput; center VCC/VSS layout minimizes switching noise coupling into sensitive analog sections. | Use Scenario: Storage of stimulus/response vectors in automated circuit test systems requiring rapid pattern replay. IC Role / Device Role / Timing Role: Static pattern memory accessed synchronously by high-speed pattern generator logic. Use Value: No refresh requirement guarantees deterministic access timing; 44-pin TSOPII footprint supports dense PCB layouts in modular test head designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-12TQLI | 12 ns access, 3.3 V supply only; no 5 V tolerance | Requires level-shifting in 5 V systems; unsuitable for direct replacement without voltage rail redesign | Select only if migrating to 3.3 V system architecture and verifying I/O voltage compatibility |
| AS6C4008-12ZIN | 12 ns access, 5 V supply, but 32-kword × 16-bit (512 kbit) capacity | Half the memory density; requires two devices for equivalent 4 Mbit capacity | Choose when board space permits multi-chip implementation and cost-per-bit optimization outweighs layout complexity |
Compared with IS61LV25616AL-12TQLI and AS6C4008-12ZIN, the R1RW0416DSB-2PR#S1 uniquely combines 4 Mbit density, 5 V operation, and byte-select capability in a single 44-pin TSOPII package-enabling drop-in replacement in legacy 5 V systems without voltage translation or parallel device stacking.
Availability
R1RW0416DSB-2PR#S1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive infotainment cache subsystems, and medical imaging data pipelines requiring stable component supply across extended production lifecycles.
Supply support for R1RW0416DSB-2PR#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1RP0416D Series was designed specifically for high-speed, wide-bit-width buffer and cache applications in 5 V embedded systems where deterministic timing, low standby power, and byte-granular write control are essential.
FAQ
What is the operating temperature range for the R1RW0416DSB-2PR#S1?
The R1RW0416DSB-2PR#S1 is rated for operation from 0°C to +70°C ambient temperature. This commercial-grade specification aligns with its target use in industrial control panels, infotainment head units, and test equipment where airflow and thermal management are controlled. The device's DC and AC characteristics-including 12 ns access time and 160 mA operating current-are guaranteed across this full range per the R10DS0284EJ0100 datasheet.
Does the R1RW0416DSB-2PR#S1 support true static operation without clocks or refresh cycles?
Yes, the R1RW0416DSB-2PR#S1 is a fully static RAM: it requires no clocks, no refresh signals, and no timing strobes to retain or access data. Its 6-transistor CMOS cell design ensures indefinite data retention as long as VCC remains within specification and CS# is held high during standby. This eliminates timing coordination overhead in microcontroller-based systems and simplifies integration into asynchronous bus architectures.
What is the significance of the "2PR" suffix in R1RW0416DSB-2PR#S1?
The "2PR" suffix in R1RW0416DSB-2PR#S1 denotes the 12 ns access time grade ("2") and Normal version ("PR") in Renesas' ordering nomenclature. It confirms the device meets 12 ns maximum access time (tAA), 12 ns maximum read cycle time (tRC), and standard standby current specifications (40 mA TTL, 5 mA CMOS), distinguishing it from L-version (low-power) or S-version (ultra-low-power) variants in the same R1RP0416D family.
Can the R1RW0416DSB-2PR#S1 operate reliably at 4.5 V supply voltage?
Yes, the R1RW0416DSB-2PR#S1 is specified to operate across 4.5 V to 5.5 V (5.0 V ±10%). At 4.5 V, all AC parameters-including 12 ns access time and 12 ns cycle time-remain valid, and DC characteristics such as output drive strength (VOL ≤ 0.4 V at 8 mA) and standby current (≤5 mA CMOS) are maintained. This margin supports stable operation under nominal 5 V rail droop in industrial power supplies.
How does the center VCC/VSS pinout of the R1RW0416DSB-2PR#S1 improve system performance?
The center VCC/VSS pinout in the R1RW0416DSB-2PR#S1 reduces power delivery impedance and minimizes simultaneous switching noise by distributing supply and ground connections symmetrically across the 44-pin TSOPII package. This layout lowers ground bounce during high-speed I/O transitions, improves signal integrity on the 16-bit data bus, and enhances timing margin in systems operating near the 12 ns access limit-particularly beneficial in noise-sensitive applications like medical imaging front-ends.
R1RW0416DSB-2PR#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1RW0416DSB-2PR#S1 FAQ
1.How can I place an order for R1RW0416DSB-2PR#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1RW0416DSB-2PR#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1RW0416DSB-2PR#S1 reliable?
The price and inventory of R1RW0416DSB-2PR#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-2PR#S1 is usually 5 days.
3.What payment methods are accepted for R1RW0416DSB-2PR#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-2PR#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1RW0416DSB-2PR#S1?
R1RW0416DSB-2PR#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1RW0416DSB-2PR#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1RW0416DSB-2PR#S1?
For technical support, including R1RW0416DSB-2PR#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-2PR#S1 requirements.
6.How does Aetrix verify that R1RW0416DSB-2PR#S1 is sourced from the original manufacturer or authorized distributors?
All R1RW0416DSB-2PR#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-2PR#S1 meets industry standards.
7.What is the process for return or replacement of R1RW0416DSB-2PR#S1?
All R1RW0416DSB-2PR#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-2PR#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1RW0416DSB-2PR#S1 part is unused and in its original packaging.
Return procedure for R1RW0416DSB-2PR#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1RW0416DSB-2PR#S1 Tags
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