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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1RW0416DSB-2SR#D1

Name: R1RW0416DSB-2SR#D1
Brand: Renesas
SKU: R1RW0416DSB-2SR#D1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1RW0416DSB-2SR#D1

Manufacturer:: Renesas

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: R1RW0416DSB-2SR#D1.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

R1RW0416DSB-2SR#D1 from Renesas Electronics is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit, fabricated using CMOS 6-transistor memory cell technology. It delivers 12 ns max access time, operates from a single 5.0 V ±10% supply, and supports byte-selectable read/write operations via UB#/LB# control-ideal for cache and buffer memory in embedded computing and industrial control systems.

For engineers reviewing the R1RW0416DSB-2SR#D1 datasheet, R1RW0416DSB-2SR#D1 pinout, R1RW0416DSB-2SR#D1 application, or R1RW0416DSB-2SR#D1 equivalent, key selection criteria include S-version low-power standby current (0.5 mA max), data retention at 2.0 V min, center VCC/VSS pinout, and compatibility with TTL-level address/data/control interfaces.

Technical Context

The R1RW0416DSB-2SR#D1 implements a fully static architecture requiring no clocks or refresh cycles, enabling deterministic timing across all modes. Its dual-byte select (UB#/LB#) enables independent 8-bit access to upper and lower data words without external logic.

It uses center VCC/VSS pin arrangement for reduced power supply noise and supports three operating states-active read/write, standby (TTL or CMOS mode), and data retention-with distinct current profiles: 160 mA max ICC, 5 mA max ISB1 (CMOS standby), and 0.2 mA max ICCDR (S-version data retention).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4 Mbit (256 kwords × 16 bits) - supports wide-data-path buffering without word-splitting logic
Access time	12 ns (max) - enables direct interface with 80 MHz bus systems without wait states
Supply voltage	5.0 V ±10% - compatible with legacy 5 V TTL/CMOS system rails
Standby current	0.5 mA (max, S-version) - reduces system power during idle periods in battery-backed or energy-sensitive designs
Data retention voltage	2.0 V (min) - maintains stored data during brown-out or controlled low-power sleep modes
I/O interface	TTL-compatible inputs/outputs - eliminates level-shifting requirements when interfacing with 5 V microcontrollers or FPGAs
Operating temperature	0 °C to +70 °C - qualified for commercial and industrial ambient environments

Pinout & Package

Packaged in 400-mil 44-pin plastic TSOPII with center VCC/VSS pin arrangement for improved power integrity and reduced ground bounce.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address input	18-bit address bus supporting full 256-kword decoding; no external address latching required
I/O1–I/O16	Data input/output	16-bit bidirectional data bus with byte-selectable operation via LB#/UB#
CS#	Chip select	Active-low enable controlling device activation; must be stable before address or control transitions
OE#	Output enable	Active-low control for output drivers; allows shared bus operation with other devices
WE#	Write enable	Active-low write strobe; combined with CS# and LB#/UB# to initiate byte-aligned writes
UB#, LB#	Upper/lower byte select	Independent 8-bit write/read control-enables partial-word updates without read-modify-write cycles
VCC, VSS	Power supply / Ground	Center-located dual VCC/VSS pins minimize IR drop and improve noise immunity in high-speed operation
NC	No connection	Unbonded pin; must remain unconnected per design specification

Key Features

Feature	Design Value
Single 5 V supply operation	Eliminates need for multi-rail power supplies or regulators in legacy 5 V systems
S-version ultra-low standby current	0.5 mA max enables >10× reduction in idle power vs. standard versions, critical for always-on subsystems
Byte-selectable I/O architecture	Reduces bus contention and simplifies firmware by allowing independent 8-bit reads/writes without masking logic
Static operation with no clocks	Removes timing constraints associated with clock distribution, jitter, and synchronization in real-time control loops
2.0 V data retention threshold	Supports graceful degradation during power loss-retains memory contents through brown-out events down to 2 V

Applications

Industrial PLC Data Buffering	Automotive Instrument Cluster Memory
Use Scenario: High-speed temporary storage of sensor fusion results and CAN message queues in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as cycle-deterministic buffer between real-time CPU core and fieldbus interface ASICs. Use Value: 12 ns access ensures zero-wait-state operation with 80 MHz Cortex-M7-based controllers, while S-version standby current extends uptime during auxiliary power interruptions.	Use Scenario: Storing graphical overlay data and gauge animation frames in digital instrument clusters with strict ASIL-B timing budgets. IC Role / Device Role / Timing Role: Non-refreshing memory providing deterministic read latency for graphics controller DMA bursts. Use Value: Center VCC/VSS layout minimizes switching noise coupling into analog gauges; 2.0 V retention preserves critical warning state during ignition cycling.
Medical Imaging Frame Buffer	Test & Measurement Equipment Cache
Use Scenario: Intermediate storage of digitized ultrasound scan lines prior to FPGA-based beamforming processing. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory interfacing directly with ADC capture FIFO and FPGA fabric. Use Value: 16-bit bus width matches common ADC output formats; TTL compatibility avoids level translators in mixed-signal signal chains.	Use Scenario: Caching waveform sample sets and calibration coefficients in portable oscilloscopes and spectrum analyzers. IC Role / Device Role / Timing Role: Low-power SRAM serving as volatile working memory for DSP co-processors during acquisition bursts. Use Value: 0.2 mA data retention current enables >72-hour backup with coin-cell batteries; 44-pin TSOPII footprint fits compact PCB layouts.

Industrial PLC Data Buffering

Automotive Instrument Cluster Memory

Use Scenario: High-speed temporary storage of sensor fusion results and CAN message queues in programmable logic controllers.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM acting as cycle-deterministic buffer between real-time CPU core and fieldbus interface ASICs.

Use Value: 12 ns access ensures zero-wait-state operation with 80 MHz Cortex-M7-based controllers, while S-version standby current extends uptime during auxiliary power interruptions.

Use Scenario: Storing graphical overlay data and gauge animation frames in digital instrument clusters with strict ASIL-B timing budgets.

IC Role / Device Role / Timing Role: Non-refreshing memory providing deterministic read latency for graphics controller DMA bursts.

Use Value: Center VCC/VSS layout minimizes switching noise coupling into analog gauges; 2.0 V retention preserves critical warning state during ignition cycling.

Medical Imaging Frame Buffer

Test & Measurement Equipment Cache

Use Scenario: Intermediate storage of digitized ultrasound scan lines prior to FPGA-based beamforming processing.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory interfacing directly with ADC capture FIFO and FPGA fabric.

Use Value: 16-bit bus width matches common ADC output formats; TTL compatibility avoids level translators in mixed-signal signal chains.

Use Scenario: Caching waveform sample sets and calibration coefficients in portable oscilloscopes and spectrum analyzers.

IC Role / Device Role / Timing Role: Low-power SRAM serving as volatile working memory for DSP co-processors during acquisition bursts.

Use Value: 0.2 mA data retention current enables >72-hour backup with coin-cell batteries; 44-pin TSOPII footprint fits compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-12TLI	12 ns access, 3.3 V supply, 256K × 16 organization, 44-pin TSOP-II	Requires level translation in 5 V systems; lower active current but higher standby vs. R1RW0416DSB-2SR#D1 S-version	Select when migrating to 3.3 V system architecture or when lower active power dominates over standby optimization
CY62167EV30LL-45ZSXIT	45 ns access, 3.0–3.6 V supply, 1 M × 16 organization, 48-pin TSOP-II	Slower timing, higher density, different pinout-requires PCB redesign and firmware timing adjustments	Choose only if system timing budget permits longer access and board space allows 48-pin footprint change

Compared with IS61LV25616AL-12TLI and CY62167EV30LL-45ZSXIT, the R1RW0416DSB-2SR#D1 uniquely combines 5 V TTL compatibility, 12 ns speed, and sub-1 mA S-version standby-making it optimal for maintaining legacy 5 V designs while minimizing idle power in intermittently active instrumentation.

Availability

R1RW0416DSB-2SR#D1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive instrument cluster memory, and medical imaging frame buffering requiring stable component supply and long-term lifecycle support.

Supply support for R1RW0416DSB-2SR#D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.

The R1RP0416D Series was designed specifically for high-speed, wide-bit-width buffer and cache applications in 5 V embedded systems where deterministic timing, low standby power, and TTL interoperability are essential.

FAQ

What is the maximum access time specified for the R1RW0416DSB-2SR#D1?

The R1RW0416DSB-2SR#D1 has a maximum access time of 12 ns, as confirmed in the AC Characteristics table of the official Renesas datasheet R10DS0284EJ0100 Rev.1.00. This value applies under standard operating conditions: Ta = 0 to +70°C and VCC = 5.0 V ±10%. The 12 ns rating is consistent across all control timing parameters including tAA, tACS, and tOE.

Does the R1RW0416DSB-2SR#D1 support independent 8-bit read/write operations?

Yes, the R1RW0416DSB-2SR#D1 supports independent 8-bit operations via dedicated UB# (upper byte select) and LB# (lower byte select) inputs. When LB# is asserted low and UB# is high, only I/O1–I/O8 are active; conversely, asserting UB# low and LB# high activates I/O9–I/O16. This capability is documented in the Operation Table and Pin Description sections of the R10DS0284EJ0100 datasheet.

What is the standby current specification for the R1RW0416DSB-2SR#D1?

The R1RW0416DSB-2SR#D1 is the S-version variant, with a maximum CMOS standby current (ISB1) of 0.5 mA, as specified on page 5 of the R10DS0284EJ0100 datasheet. This value is measured at f = 0 MHz with VCC ≥ CS# ≥ VCC − 0.2 V and input voltages clamped near rail extremes. It is significantly lower than the 5 mA max for the L-version and 40 mA max for TTL standby mode.

Can the R1RW0416DSB-2SR#D1 retain data at reduced supply voltage?

Yes, the R1RW0416DSB-2SR#D1 guarantees data retention down to 2.0 V minimum VCC, as stated in the Low VCC Data Retention Characteristics table (page 12). At this voltage, the S-version draws ≤0.2 mA (ICCDR), enabling reliable memory hold during brown-out conditions or battery-backed sleep modes without external supervision circuitry.

What package type is used for the R1RW0416DSB-2SR#D1?

The R1RW0416DSB-2SR#D1 uses a 400-mil 44-pin plastic TSOPII package, as indicated in the Ordering Information table on page 1 of the R10DS0284EJ0100 datasheet. This surface-mount package features gull-wing leads and center VCC/VSS pin placement, optimized for thermal performance and signal integrity in high-density PCB layouts.

R1RW0416DSB-2SR#D1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Active

Programmable:: -

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 12ns

Access Time:: 12 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

R1RW0416DSB-2SR#D1 FAQ

1.How can I place an order for R1RW0416DSB-2SR#D1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1RW0416DSB-2SR#D1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1RW0416DSB-2SR#D1 reliable?

The price and inventory of R1RW0416DSB-2SR#D1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1RW0416DSB-2SR#D1 is usually 5 days.

3.What payment methods are accepted for R1RW0416DSB-2SR#D1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1RW0416DSB-2SR#D1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1RW0416DSB-2SR#D1?

R1RW0416DSB-2SR#D1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1RW0416DSB-2SR#D1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1RW0416DSB-2SR#D1?

For technical support, including R1RW0416DSB-2SR#D1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1RW0416DSB-2SR#D1 requirements.

6.How does Aetrix verify that R1RW0416DSB-2SR#D1 is sourced from the original manufacturer or authorized distributors?

All R1RW0416DSB-2SR#D1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1RW0416DSB-2SR#D1 meets industry standards.

7.What is the process for return or replacement of R1RW0416DSB-2SR#D1?

All R1RW0416DSB-2SR#D1 units undergo pre-shipment inspection (PSI). If there is an issue with R1RW0416DSB-2SR#D1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1RW0416DSB-2SR#D1 part is unused and in its original packaging.

Return procedure for R1RW0416DSB-2SR#D1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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