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Renesas R1WV3216RBG-7SI#B0
- Part No.:
- R1WV3216RBG-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1WV3216RBG-7SI#B0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,463
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Product details
Overview
R1WV3216RBG-7SI#B0 from Renesas Electronics is a 32Mb (2M × 16-bit) low-power static RAM with 70 ns access time, single 2.7–3.6 V supply, 4 µA typical standby current at 3.0 V, and data retention down to 2.0 V - designed for battery-backed memory systems in portable instrumentation and industrial control units.
For engineers reviewing the R1WV3216RBG-7SI#B0 datasheet, R1WV3216RBG-7SI#B0 pinout, R1WV3216RBG-7SI#B0 application, or R1WV3216RBG-7SI#B0 equivalent, this page delivers verified electrical specs, f-BGA package layout, byte-select capability, TTL-compatible I/O, and direct replacement guidance for legacy LPSRAM designs requiring zero-refresh operation and compact mounting area.
Technical Context
The R1WV3216RBG-7SI#B0 implements a stacked-micro-package architecture integrating two 16Mb Advanced LPSRAM dies in a single 48-ball fine-pitch BGA (7.5 mm × 8.5 mm, 0.75 mm pitch). It operates in word mode (A0–A20, DQ0–DQ15) or byte mode (A−1–A20, DQ0–DQ7) when enabled via BYTE# - though BYTE# is not supported on the f-BGA variant.
Memory control uses dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), write enable (WE#), and output enable (OE#) to support seamless memory expansion and OR-tie bus interfacing. All inputs/outputs are TTL-compatible with VIH ≥ 2.4 V and VIL ≤ 0.4 V under recommended operating conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 32 Mbit (2,097,152 words × 16 bits) - supports high-density data buffering without refresh circuitry |
| Access time | 70 ns max - enables reliable interface with 12 MHz microcontrollers and DSPs without wait states |
| Supply voltage | 2.7–3.6 V - compatible with Li-ion battery rails and regulated 3.3 V systems |
| Standby current | 4 µA typ. at 3.0 V - extends battery life in always-on backup memory applications |
| Data retention voltage | 2.0 V min - maintains stored data during brown-out or battery-swapping events |
| Package | 48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch, 6×8 array) - reduces PCB footprint vs. TSOP alternatives |
| Operating temperature | −40 °C to +85 °C (Industrial grade) - qualified for embedded systems in harsh thermal environments |
Pinout & Package
Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm, 0.75 mm ball pitch, 6×8 array. No BYTE# pin - byte-mode operation is unsupported on this f-BGA variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs (word mode) | 21-bit address bus supporting full 2M-word addressing; no A−1 pin present in f-BGA |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common data bus with three-state outputs; enables OR-tie bus sharing |
| CS1#, CS2 | Chip select inputs | Dual-select architecture allows hierarchical memory mapping and power-gating of sub-arrays |
| LB#, UB# | Lower/upper byte enable | Independent 8-bit byte controls for efficient partial-word writes without read-modify-write overhead |
| WE#, OE# | Write and output enable | Asynchronous controls decoupled from clock - eliminates timing constraints of synchronous SRAMs |
| Vcc, Vss | Power and ground | Single-supply operation; Vss pins distributed across corners for low-noise grounding |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | True static RAM architecture eliminates external refresh controller and associated power/complexity |
| TTL-compatible I/O | Direct interface with legacy 3.3 V microcontrollers and FPGAs without level-shifting circuitry |
| Low-voltage data retention | Maintains valid data at Vcc = 2.0 V - critical for seamless battery switchover in medical and test equipment |
| Three-state OR-tie outputs | Enables multiple devices to share a common data bus without external bus transceivers |
| Easy memory expansion | CS1#/CS2, LB#, UB# and OE# support daisy-chained or parallel bank configurations up to 64 MB |
Applications
| Portable Data Loggers | Industrial PLC Memory Modules |
|---|---|
Use Scenario: Battery-powered environmental sensor nodes logging temperature, humidity, and pressure at 1 Hz for 30 days. IC Role / Device Role / Timing Role: Primary non-volatile buffer storing timestamped samples during main CPU sleep cycles. Use Value: 4 µA standby current extends coin-cell life beyond 1 year; 2.0 V retention ensures no data loss during battery replacement. |
Use Scenario: Modular I/O backplane requiring fast, deterministic access to configuration and state variables across multiple racks. IC Role / Device Role / Timing Role: Local SRAM cache co-located with FPGA-based logic controllers for cycle-critical I/O mapping tables. Use Value: 70 ns access time meets <100 ns real-time scan cycle budgets; f-BGA package enables dense, EMI-robust layout on multi-layer control boards. |
| Medical Diagnostic Handhelds | Automotive Infotainment Boot Memory |
Use Scenario: Ultrasound probe with integrated digitizer capturing raw RF frames before compression and transmission. IC Role / Device Role / Timing Role: High-bandwidth frame buffer between ADC and ARM Cortex-A processor running Linux. Use Value: 16-bit bus width matches ADC output format; no-refresh operation prevents timing jitter in real-time signal processing pipelines. |
Use Scenario: Head unit booting from NAND flash where initial firmware decompression requires fast, temporary working memory. IC Role / Device Role / Timing Role: Early-boot SRAM used by ROM code to stage bootloader and kernel image prior to DRAM initialization. Use Value: −40 °C to +85 °C rating ensures reliability across vehicle cabin temperatures; 3.3 V compatibility aligns with automotive PMIC outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 48-ball f-BGA, 16Mb (1M × 16), 70 ns, 2.2–3.6 V, 25 µA standby @ 3 V | Half capacity; higher standby current; wider voltage range | Select when lower cost and smaller density suffice, and extended voltage tolerance is needed. |
| IS61WV204816BLL-70BLI | 48-ball f-BGA, 32Mb (2M × 16), 70 ns, 2.5–3.6 V, 20 µA standby @ 3 V | Same density and speed; higher standby current; no 2.0 V retention spec | Choose when Renesas qualification is not required and board-level validation favors ISSI's long-term supply assurance. |
Compared with CY62167EV30LL-70ZSXI and IS61WV204816BLL-70BLI, the R1WV3216RBG-7SI#B0 delivers superior ultra-low-power retention (4 µA vs. ≥20 µA) and guaranteed 2.0 V data hold - making it uniquely suitable for battery-swappable and energy-harvesting systems where memory persistence is non-negotiable.
Availability
R1WV3216RBG-7SI#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, medical handhelds, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature operation.
Supply support for R1WV3216RBG-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV3216R Series was developed as an advanced low-power SRAM family targeting battery-operated and battery-backup applications where zero-refresh simplicity, minimal standby power, and compact packaging are essential design requirements.
FAQ
What is the maximum access time specified for the R1WV3216RBG-7SI#B0?
The R1WV3216RBG-7SI#B0 has a maximum access time of 70 ns under recommended operating conditions (Vcc = 2.7–3.6 V, Ta = −40 °C to +85 °C). This value is guaranteed across the full industrial temperature range and applies to address-to-data valid timing (tAA) and chip-select-to-output-valid (tACS1/tACS2) parameters as defined in the AC characteristics table on page 8 of the datasheet.
Does the R1WV3216RBG-7SI#B0 support byte-mode operation?
No, the R1WV3216RBG-7SI#B0 does not support byte-mode operation. Although the R1WV3216R Series datasheet describes BYTE# functionality, that pin is only implemented on the 52-pin µTSOP variants (e.g., R1WV3216RSD-7S%). The f-BGA package (R1WV3216RBG-7SI#B0) omits the BYTE# pin and operates exclusively in 16-bit word mode using address lines A0–A20 and data lines DQ0–DQ15.
What is the minimum supply voltage required to retain data in the R1WV3216RBG-7SI#B0?
The R1WV3216RBG-7SI#B0 guarantees data retention down to 2.0 V (VDR = 2.0 V min), as specified in the Data Retention Characteristics table on page 14. At this voltage, the device draws ≤12 µA (typ.) at +25 °C and maintains stored data indefinitely - enabling robust operation during brown-out events or battery transitions without external backup capacitors.
Is the R1WV3216RBG-7SI#B0 pin-compatible with other members of the R1WV3216R family?
The R1WV3216RBG-7SI#B0 shares identical pinout and ball assignment with other 48-ball f-BGA variants in the R1WV3216R family (e.g., R1WV3216RBG-8S% and R1WV3216RBG-7S%), differing only in access time (70 ns vs. 85 ns) and temperature grade. It is not pin-compatible with the 52-pin µTSOP variants due to different package type, pin count, and presence/absence of BYTE#.
What are the key thermal and reliability qualifications for the R1WV3216RBG-7SI#B0?
The R1WV3216RBG-7SI#B0 is rated for industrial temperature operation (−40 °C to +85 °C) and conforms to Renesas' Standard quality grade per document colophon. It undergoes qualification per JEDEC JESD22-A108 for storage life and JESD22-A104 for temperature cycling. The f-BGA package supports reflow soldering per IPC/JEDEC J-STD-020, and the device is RoHS-compliant and halogen-free.
R1WV3216RBG-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1WV3216RBG-7SI#B0 FAQ
1.How can I place an order for R1WV3216RBG-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV3216RBG-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV3216RBG-7SI#B0 reliable?
The price and inventory of R1WV3216RBG-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV3216RBG-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV3216RBG-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV3216RBG-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV3216RBG-7SI#B0?
R1WV3216RBG-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV3216RBG-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV3216RBG-7SI#B0?
For technical support, including R1WV3216RBG-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV3216RBG-7SI#B0 requirements.
6.How does Aetrix verify that R1WV3216RBG-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV3216RBG-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV3216RBG-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV3216RBG-7SI#B0?
All R1WV3216RBG-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV3216RBG-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV3216RBG-7SI#B0 part is unused and in its original packaging.
Return procedure for R1WV3216RBG-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV3216RBG-7SI#B0 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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