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Renesas R1WV3216RBG-7SI#S0
- Part No.:
- R1WV3216RBG-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1WV3216RBG-7SI#S0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,405
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Product details
Overview
R1WV3216RBG-7SI#S0 from Renesas Electronics is a 32Mb (2M × 16-bit) low-power static RAM optimized for battery-backed memory systems, operating from a single 2.7–3.6V supply with 70 ns access time and 4 µA typical standby current at 3.0V. It integrates two 16Mb Advanced LPSRAM dies in one f-BGA package and supports TTL-compatible interfacing without clocks or refresh cycles.
For engineers reviewing the R1WV3216RBG-7SI#S0 datasheet, R1WV3216RBG-7SI#S0 pinout, R1WV3216RBG-7SI#S0 application, or R1WV3216RBG-7SI#S0 equivalent, this device is selected for compact, low-quiescent-power embedded memory where data retention down to 2.0V and byte-selectable I/O control are critical design requirements.
Technical Context
The R1WV3216RBG-7SI#S0 implements a dual-die stacked-micro-package architecture using 0.15 µm CMOS process technology, delivering 32Mb density in a 48-ball fine-pitch BGA (7.5 mm × 8.5 mm, 0.75 mm pitch). Its memory array is organized as 2,097,152 words × 16 bits, with full support for upper/lower byte selection via UB# and LB# pins and common bidirectional DQ0–DQ15 I/O lines.
It operates in word mode (A0–A20 addressing) only - byte mode (A−1–A20) and BYTE# functionality are exclusive to the µTSOP variant and not supported on this f-BGA part. Data retention is guaranteed at Vcc ≥ 2.0V with CS1# or CS2-controlled entry into low-current retention state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 × 16-bit), enabling compact high-capacity SRAM in space-constrained designs |
| Access Time | 70 ns max - ensures compatibility with 14 MHz bus timing in legacy and industrial controllers |
| Supply Voltage | 2.7–3.6 V - matches Li-ion battery and regulated 3.3V system rails without level-shifting |
| Standby Current | 4 µA typ. at 3.0V - extends battery life in always-on backup memory applications |
| Data Retention Voltage | 2.0 V min - maintains stored data during brown-out or battery depletion events |
| Package | 48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch, 6×8 array) - supports high-density PCB layouts |
| Temperature Range | −40°C to +85°C (Industrial grade) - qualified for extended ambient operation in automotive and industrial environments |
Pinout & Package
Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm, 0.75 mm ball pitch, 6×8 array. Ball assignment follows JEDEC MO-245 standard for 48-ball BGA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs | 21-bit address bus supporting full 2M-word decoding; A−1 not present - byte mode disabled |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common data bus with three-state outputs; enables OR-tie for memory expansion |
| CS1#, CS2 | Chip select inputs | Two independent chip enables - CS1# primary, CS2 used for address buffer control and data retention mode selection |
| WE#, OE#, LB#, UB# | Control inputs | Write enable, output enable, and upper/lower byte selects - allow partial writes and read masking without external logic |
| Vcc, Vss | Power terminals | Single 2.7–3.6V supply and ground - no separate I/O or core voltage rails required |
Key Features
| Feature | Design Value |
|---|---|
| No refresh or clock required | Eliminates timing-critical clock tree and refresh controller overhead in microcontroller-based systems |
| TTL-compatible I/O levels | Direct interface with legacy 3.3V/5V logic families without level translators or bus buffers |
| Byte-selectable write capability | UB# and LB# enable independent 8-bit writes - reduces bus traffic and improves firmware efficiency |
| Low-voltage data retention | Maintains valid data at Vcc = 2.0V - supports >100-hour backup from coin-cell batteries |
| Stacked-die f-BGA packaging | Halves footprint vs. discrete 16Mb SRAMs while preserving signal integrity and thermal performance |
Applications
| Industrial PLC Data Buffer | Medical Device Nonvolatile Cache |
|---|---|
Use Scenario: Real-time logging of sensor readings and control states in programmable logic controllers during power interruption. IC Role / Device Role / Timing Role: Standby SRAM providing fast, deterministic read/write access with guaranteed data retention below 2.5V. Use Value: Enables seamless state recovery after brown-out without external backup capacitors or supercapacitors. | Use Scenario: Temporary storage of patient waveform data in portable ECG monitors between Bluetooth transmission bursts. IC Role / Device Role / Timing Role: Low-leakage memory holding up to 2M samples with minimal self-discharge during idle periods. Use Value: Extends battery runtime by reducing average current draw to <5 µA in sleep mode. |
| Automotive Infotainment Boot Memory | Test Equipment Firmware Scratchpad |
Use Scenario: Storing boot configuration and calibration tables in head-unit systems requiring rapid cold-start initialization. IC Role / Device Role / Timing Role: High-speed parallel SRAM accessed directly by ARM Cortex-A MCU during early boot sequence. Use Value: 70 ns access time meets tight timing budgets for ROM-less boot loaders running from external memory. | Use Scenario: On-the-fly instruction and variable storage for FPGA-based digital pattern generators during test vector execution. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as scratchpad memory with simultaneous read/write arbitration via LB#/UB#. Use Value: Eliminates need for external arbitration logic and reduces PCB layer count in high-speed test instrumentation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZXC | 48-ball f-BGA, 16Mb (1M × 16), 70 ns, 2.2–3.6V supply, 2 µA standby | Half the density; lower Vcc min (2.2V); tighter standby spec but no 32Mb option | Select when board space allows two devices and ultra-low leakage (<2 µA) is prioritized over density |
| IS61WV3216BLL-70BLI | 48-ball f-BGA, 32Mb (2M × 16), 70 ns, 2.5–3.6V, 15 µA standby at 3.0V | Same density and timing; higher standby current; different manufacturer's retention behavior below 2.5V | Choose if existing IS61WV qualification and supply chain alignment outweigh minor standby penalty |
Compared with CY62167EV30LL-70ZXC and IS61WV3216BLL-70BLI, the R1WV3216RBG-7SI#S0 uniquely balances 32Mb density, 70 ns speed, sub-5 µA standby, and 2.0V data retention in a single industrial-grade f-BGA package - making it optimal for battery-backed systems where both capacity and ultra-low quiescent power are simultaneously required.
Availability
R1WV3216RBG-7SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical device caching, automotive infotainment boot memory, and test equipment scratchpad applications requiring stable component supply across extended product lifecycles.
Supply support for R1WV3216RBG-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV3216R Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh operation, compact packaging, and robust data retention - targeting portable instrumentation, medical wearables, and industrial edge nodes.
FAQ
What is the maximum operating temperature range for the R1WV3216RBG-7SI#S0?
The R1WV3216RBG-7SI#S0 is rated for industrial temperature operation from −40°C to +85°C, as confirmed in the ordering information table on page 2 of the REJ03C0215-0300Z datasheet. This range applies to all DC and AC specifications unless otherwise noted, and the "I" suffix in the part number explicitly denotes the industrial temperature grade.
Does the R1WV3216RBG-7SI#S0 support byte-mode addressing?
No, the R1WV3216RBG-7SI#S0 does not support byte-mode addressing. The datasheet explicitly states that BYTE# functionality and A−1 addressing are supported only on the 52-pin µTSOP variants (e.g., R1WV3216RSD-7S%). This f-BGA part uses word-mode addressing exclusively with A0–A20 inputs and lacks the BYTE# pin.
What is the minimum supply voltage required to retain data in the R1WV3216RBG-7SI#S0?
The R1WV3216RBG-7SI#S0 guarantees data retention down to Vcc = 2.0V, as specified in the Data Retention Characteristics table on page 14 of the datasheet. At this voltage, the device enters low-current retention mode with typical current draw of 12 µA at +25°C and remains fully functional upon voltage restoration.
Can the R1WV3216RBG-7SI#S0 be used as a direct replacement for the R1WV3216RBG-8S%?
Yes, the R1WV3216RBG-7SI#S0 is functionally identical to the R1WV3216RBG-8S% except for access time: 70 ns vs. 85 ns. Both share the same pinout, voltage range, temperature grade, package, and feature set. The faster timing allows drop-in use in designs originally specifying the -8S% version, provided setup/hold margins remain sufficient.
Is the R1WV3216RBG-7SI#S0 RoHS compliant?
Yes, the R1WV3216RBG-7SI#S0 is RoHS compliant. Renesas confirms RoHS compliance for all products manufactured after July 2006 per the notice on page 15 of the datasheet, and this part number falls within that scope. Full compliance documentation is available through Renesas's official environmental reports portal.
R1WV3216RBG-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1WV3216RBG-7SI#S0 FAQ
1.How can I place an order for R1WV3216RBG-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV3216RBG-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV3216RBG-7SI#S0 reliable?
The price and inventory of R1WV3216RBG-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV3216RBG-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1WV3216RBG-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV3216RBG-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV3216RBG-7SI#S0?
R1WV3216RBG-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV3216RBG-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV3216RBG-7SI#S0?
For technical support, including R1WV3216RBG-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV3216RBG-7SI#S0 requirements.
6.How does Aetrix verify that R1WV3216RBG-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1WV3216RBG-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV3216RBG-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1WV3216RBG-7SI#S0?
All R1WV3216RBG-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV3216RBG-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV3216RBG-7SI#S0 part is unused and in its original packaging.
Return procedure for R1WV3216RBG-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV3216RBG-7SI#S0 Tags
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