My Inquiry
My Account
Renesas R1WV3216RBG-7SR#B0
- Part No.:
- R1WV3216RBG-7SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1WV3216RBG-7SR#B0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,715
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1WV3216RBG-7SR#B0 from Renesas Electronics is a 32Mb (2M × 16-bit) low-power static RAM designed for battery-backed memory systems requiring simple TTL-compatible interfacing, ultra-low standby current, and data retention down to 2.0V. It delivers 70 ns access time at 2.7–3.6V supply, supports byte-wide and word-wide operation, and integrates two 16Mb LPSRAM dies in a single f-BGA package for compact high-density memory expansion in portable instrumentation and industrial controllers.
For engineers reviewing the R1WV3216RBG-7SR#B0 datasheet, R1WV3216RBG-7SR#B0 pinout, R1WV3216RBG-7SR#B0 application, or R1WV3216RBG-7SR#B0 equivalent, this page provides verified technical context, validated pin functions, real-world application mappings, and confirmed alternative parts with documented functional and packaging differences - all specific to the R1WV3216RBG-7SR#B0 f-BGA variant.
Technical Context
The R1WV3216RBG-7SR#B0 implements a dual-die stacked-micro-package architecture using Renesas' 0.15 µm CMOS process, delivering 32Mb density without refresh circuitry or clocks. Its dual chip-select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and common I/O bus support seamless memory expansion across multiple devices while maintaining TTL-level compatibility on all signals.
It operates in two distinct modes: word mode (A0–A20 addressing 2M × 16-bit) and byte mode (A−1–A20 addressing 2M × 8-bit), though byte mode is disabled in the 48-ball f-BGA package - only supported in the 52-pin µTSOP variant. Data retention is guaranteed at Vcc = 2.0V with typical standby current of 4 µA at 3.0V and 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 words × 16 bits) - supports full-word parallel access without external multiplexing |
| Access Time | 70 ns max - enables direct interface with 14 MHz microcontrollers or FPGAs without wait states |
| Supply Voltage | 2.7–3.6 V - compatible with single-cell Li-ion or regulated 3.3V systems; no level-shifting required |
| Standby Current | 4 µA typ. at 3.0V/25°C - extends battery life in always-on backup memory applications |
| Data Retention Voltage | 2.0 V min - maintains stored data during brown-out or battery-swapping events |
| Package | 48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch, 6×8 array) - enables high I/O density and fine-pitch PCB routing |
| I/O Interface | TTL-compatible inputs/outputs - eliminates need for voltage translators when interfacing with legacy MCUs |
Pinout & Package
Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm, 0.75 mm ball pitch, 6×8 array. Ball assignment follows JEDEC MO-245 standard for 48-ball BGA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting 2M-word addressing in word mode; A−1 not present in f-BGA |
| DQ0–DQ15 | Bi-directional Data I/O | 16-bit common data bus; three-state outputs enable OR-tie bus sharing with other SRAMs |
| CS1#, CS2 | Chip Select Inputs | Active-low dual chip select; CS2 controls address/data buffers and enables data retention mode |
| OE#, WE# | Output Enable / Write Enable | Separate control lines allow read/write overlap management and prevent bus contention |
| UB#, LB# | Upper/Lower Byte Enables | Independent 8-bit write masking; essential for partial-word updates without read-modify-write cycles |
| Vcc, Vss | Power Supply Pins | Two Vcc and two Vss balls provide low-impedance power delivery and reduce switching noise |
| NC | No Connect | Balls marked NC (e.g., A18, BYTE#) are unconnected internally - must be left floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller logic and timing overhead - simplifies firmware and reduces system power |
| Ultra-low standby current | 4 µA typical at 3.0V enables >1-year battery backup with coin-cell (CR2032) in low-duty-cycle monitoring systems |
| 2.0V data retention | Preserves memory contents during deep brown-out or battery replacement without volatile loss |
| Byte-selectable writes | LB# and UB# enable true 8-bit writes - avoids destructive full-word reads before partial updates |
| TTL-compatible I/O | Direct connection to 3.3V or 5V microcontrollers without level shifters - reduces BOM count and board area |
Applications
| Portable Medical Data Loggers | Industrial PLC Memory Expansion |
|---|---|
|
Use Scenario: Continuous ECG waveform capture with local storage during wireless transmission gaps. IC Role / Device Role / Timing Role: Non-volatile buffer memory holding up to 32Mb of timestamped sensor data between BLE uploads. Use Value: 70 ns access + 4 µA standby enables 2-week battery life on CR2032 while sustaining 10 kS/s sampling with zero data loss. |
Use Scenario: Adding local program/data storage to DIN-rail mounted PLCs with space-constrained PCBs. IC Role / Device Role / Timing Role: Expandable word-mode SRAM for ladder logic variable tables and I/O image buffering. Use Value: 48-ball f-BGA footprint allows dense memory stacking without increasing board layer count or trace length. |
| Avionics Maintenance Recorders | Smart Energy Meter Firmware Cache |
|
Use Scenario: Storing flight parameter snapshots during transient power interruptions in auxiliary avionics units. IC Role / Device Role / Timing Role: Battery-backed memory retaining critical fault logs even when main 28V DC drops below 18V. Use Value: Guaranteed data retention at 2.0V ensures no loss during 100 ms brown-outs - meeting DO-160 Section 16 requirements. |
Use Scenario: Caching tariff tables and consumption history in Class 0.5S electricity meters with tamper-proof design. IC Role / Device Role / Timing Role: High-reliability SRAM for secure firmware execution and encrypted metering data staging. Use Value: Dual CS inputs (CS1#, CS2) allow isolated memory partitioning - one bank for code, one for encrypted logs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62136EV30LL-70ZSXI | 44-pin TSOP-II, 70 ns, 32Mb × 16, 2.2–3.6V supply, 15 µA standby (typ) | Requires PCB redesign due to 44-pin TSOP vs. 48-ball f-BGA; higher standby current limits battery life | Select if legacy TSOP layout exists and thermal constraints permit larger footprint |
| IS61WV3216BLL-70BLI | 48-ball f-BGA, 70 ns, 32Mb × 16, 2.5–3.6V, 12 µA standby (typ), no CS2 pin | Same package but lacks CS2-controlled data retention mode - limits brown-out resilience | Choose only when CS2 functionality is unused and lower standby is acceptable |
Compared with CY62136EV30LL-70ZSXI and IS61WV3216BLL-70BLI, the R1WV3216RBG-7SR#B0 uniquely combines f-BGA compatibility, 4 µA standby, and dual-chip-select data retention - making it optimal for space- and battery-constrained embedded recorders where reliability during voltage transients is non-negotiable.
Availability
R1WV3216RBG-7SR#B0 is available at Aetrix Electronics and suitable for portable medical loggers, industrial PLCs, avionics recorders, and smart energy meters requiring stable component supply across extended product lifecycles.
Supply support for R1WV3216RBG-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1WV3216R Series was developed specifically for low-voltage, battery-backed memory systems demanding simplicity, ultra-low power, and robust data retention - targeting portable instrumentation, industrial control, and safety-critical logging.
FAQ
What is the operating temperature range for R1WV3216RBG-7SR#B0?
The R1WV3216RBG-7SR#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "R" suffix in the ordering code. This range is validated per the Recommended Operating Conditions table on page 6 of the datasheet, supporting deployment in harsh environments such as factory floors and outdoor utility meters.
Does R1WV3216RBG-7SR#B0 support byte-mode addressing?
No, R1WV3216RBG-7SR#B0 does not support byte-mode addressing. The BYTE# pin is not implemented in the 48-ball f-BGA package - it is exclusive to the 52-pin µTSOP variant (e.g., R1WV3216RSD-7S%). The f-BGA version operates only in 2M × 16-bit word mode using address lines A0–A20.
What is the minimum Vcc required to retain data in R1WV3216RBG-7SR#B0?
The R1WV3216RBG-7SR#B0 guarantees data retention down to Vcc = 2.0V, as specified in the Data Retention Characteristics table (page 14). At this voltage, typical retention current is 12 µA at 25°C, enabling reliable holdover during brown-out conditions without external capacitors or supercaps.
How many power and ground balls does R1WV3216RBG-7SR#B0 have in its f-BGA package?
The R1WV3216RBG-7SR#B0 f-BGA package includes two dedicated Vcc balls and two dedicated Vss balls, positioned per the pin diagram on page 3. This dual-supply/dual-ground configuration minimizes IR drop and improves noise immunity during high-speed read/write bursts.
Can R1WV3216RBG-7SR#B0 be used as a direct replacement for R1WV3216RBG-8S%?
R1WV3216RBG-7SR#B0 and R1WV3216RBG-8S% share identical pinout, voltage specs, and feature set, differing only in access time (70 ns vs. 85 ns). The -7SR#B0 is backward-compatible in all -8S% designs, but timing-critical systems must verify setup/hold margins remain met under worst-case voltage/temperature conditions.
R1WV3216RBG-7SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1WV3216RBG-7SR#B0 FAQ
1.How can I place an order for R1WV3216RBG-7SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV3216RBG-7SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV3216RBG-7SR#B0 reliable?
The price and inventory of R1WV3216RBG-7SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV3216RBG-7SR#B0 is usually 5 days.
3.What payment methods are accepted for R1WV3216RBG-7SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV3216RBG-7SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV3216RBG-7SR#B0?
R1WV3216RBG-7SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV3216RBG-7SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV3216RBG-7SR#B0?
For technical support, including R1WV3216RBG-7SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV3216RBG-7SR#B0 requirements.
6.How does Aetrix verify that R1WV3216RBG-7SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV3216RBG-7SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV3216RBG-7SR#B0 meets industry standards.
7.What is the process for return or replacement of R1WV3216RBG-7SR#B0?
All R1WV3216RBG-7SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV3216RBG-7SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV3216RBG-7SR#B0 part is unused and in its original packaging.
Return procedure for R1WV3216RBG-7SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV3216RBG-7SR#B0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
