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Renesas R1WV3216RSD-7SI#B0
- Part No.:
- R1WV3216RSD-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1WV3216RSD-7SI#B0.pdf
- Description:
- 32MB SUPERSRAM (2M X16-BIT)
- Quantity:
- Payment:
- Shipping:
Inventory:4,402
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Product details
Overview
R1WV3216RSD-7SI#B0 from Renesas Electronics is a 32Mb (2M word × 16-bit) low-power static RAM in 52-pin µTSOP package, operating from 2.7–3.6V with 70 ns access time and 4 µA typical standby current at 3.0V. It supports byte-mode addressing via BYTE# pin and delivers data retention down to 2.0V - ideal for battery-backed memory systems in portable instrumentation and industrial controllers.
For engineers reviewing the R1WV3216RSD-7SI#B0 datasheet, R1WV3216RSD-7SI#B0 pinout, R1WV3216RSD-7SI#B0 application, or R1WV3216RSD-7SI#B0 equivalent, this page provides verified technical context, validated pin functions, real-world use cases, and two confirmed alternative parts for memory subsystem design and legacy system refresh.
Technical Context
The R1WV3216RSD-7SI#B0 implements a stacked-micro-package architecture integrating two 16Mb Advanced LPSRAM dies in a single 52-pin µTSOP. Its TTL-compatible I/O interface, no-clock/no-refresh operation, and dual chip-select (CS1#, CS2) enable seamless integration into microcontroller- or FPGA-based memory maps without timing controller overhead.
Byte-mode support (via dedicated BYTE# pin) allows flexible x8/x16 data bus configuration - only available on the µTSOP variant - while LB#/UB# pins provide independent lower/upper byte control. Standby mode is entered via CS1# high or CS2 low, reducing current to ≤50 µA over full industrial temperature range (–40°C to +85°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 words × 16 bits) - supports full-word parallel access without external address multiplexing. |
| Access Time | 70 ns max - ensures compatibility with 14 MHz bus clocks in legacy microprocessor systems (e.g., SH-3, ColdFire). |
| Supply Voltage | 2.7–3.6 V - enables direct interface with 3.3V logic families and battery-backed operation down to 2.0V for data retention. |
| Standby Current | 50 µA max at +85°C - sustains multi-year battery backup in power-critical applications like smart meters and RTUs. |
| Package | 52-pin µTSOP (10.79 mm × 10.49 mm, 0.4 mm pitch) - surface-mount compatible with standard reflow profiles and high-density PCB layouts. |
| Temperature Range | –40°C to +85°C (Industrial grade) - qualified for deployment in uncontrolled environments including factory automation and outdoor telecom nodes. |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifting requirements when interfacing with legacy 3.3V microcontrollers and ASICs. |
Pinout & Package
52-pin plastic µTSOP (II), normal-bend type (52PTG), footprint 10.79 mm × 10.49 mm, pin pitch 0.4 mm. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1 (page 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus supporting full 2M-word decoding; A-1 used only in byte mode (µTSOP only). |
| DQ0–DQ15 | Data I/O (bidirectional) | 16-bit common data bus; three-state outputs allow OR-tie for memory expansion without external buffers. |
| CS1#, CS2 | Chip select inputs | Two independent enables: CS1# active-low primary select; CS2 enables address buffer and controls retention mode. |
| LB#, UB# | Lower/upper byte select | Enable write/read to DQ0–DQ7 (LB#) or DQ8–DQ15 (UB#); both low enables full 16-bit access. |
| OE#, WE# | Output enable / Write enable | OE# prevents bus contention during read; WE# controls write cycle timing and must be low during valid data setup. |
| BYTE# | Byte/word mode select | µTSOP-only pin: LOW selects x8 mode (A-1 to A20, DQ0–DQ7); HIGH selects x16 mode (A0–A20, DQ0–DQ15). |
| Vcc, Vss | Power supply / Ground | Single 2.7–3.6V supply; separate Vss pins (pins 6, 27, 42) reduce ground bounce in high-speed access. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates DRAM controller complexity and periodic refresh overhead - simplifies firmware and reduces CPU load. |
| Data retention at 2.0V | Preserves stored contents during brown-out or battery-switchover without external backup circuitry. |
| OR-tie capable outputs | Enables direct connection of multiple R1WV3216RSD-7SI#B0 devices to shared data bus - no external bus transceivers needed. |
| Easy memory expansion | CS1#, CS2, LB#, UB# allow hierarchical decoding for up to 4× density scaling using identical parts. |
| Low-standby current | 4 µA typical at 3.0V/25°C - extends battery life in always-on monitoring devices beyond 10 years. |
Applications
| Portable Data Loggers | Industrial PLC Memory Modules |
|---|---|
|
Use Scenario: Battery-powered environmental sensor node recording temperature, humidity, and pressure every 10 seconds for 5+ years. IC Role / Device Role / Timing Role: Primary non-volatile scratchpad memory holding buffered samples before RF transmission; operates in low-power standby between reads. Use Value: 4 µA standby current and 2.0V data retention enable coin-cell operation without supercapacitor or EEPROM wear leveling. |
Use Scenario: Modular I/O rack requiring field-upgradable program memory with deterministic 70 ns read latency. IC Role / Device Role / Timing Role: X16 SRAM mapped into CPU address space as fast program/data RAM; accessed via fixed-address bus decode. Use Value: TTL compatibility and no-refresh operation eliminate glue logic, reducing BOM cost and board area vs. DDR or PSRAM solutions. |
| Medical Diagnostic Handhelds | Avionics Maintenance Terminals |
|
Use Scenario: Portable ultrasound device storing calibration tables and last-scan buffers during battery-only operation. IC Role / Device Role / Timing Role: Dual-port accessible memory bank: one port for acquisition engine, second for UI processor - coordinated via LB#/UB#. Use Value: Byte-select capability allows concurrent 8-bit updates to calibration coefficients while 16-bit image buffers stream. |
Use Scenario: Line-replaceable unit (LRU) performing real-time flight data buffering with guaranteed retention during power interruption. IC Role / Device Role / Timing Role: Critical data cache retaining last 30 seconds of sensor telemetry during main power loss; powered by isolated backup rail. Use Value: –40°C to +85°C rating and 50 µA max ISB1 ensure reliable operation across aircraft cabin and avionics bay thermal zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit (4Mb), 10 ns access, 3.3V only, 54-pin TSOP | Higher speed but lower density; lacks data retention below 2.7V | Choose for faster access in new designs where 4Mb suffices and voltage margin is >3.0V. |
| AS6C4008-70ZIN | 256K × 16-bit (4Mb), 70 ns access, 2.7–3.6V, 44-pin SOJ | Same speed/voltage but smaller density and SOJ package - less suitable for high-pin-count routing | Prefer for cost-sensitive upgrades where PCB layout reuse is constrained and 4Mb meets capacity needs. |
Compared with R1WV3216RSD-7SI#B0, IS61LV25616AL-10TLI offers higher speed but only 1/8 the density and no sub-2.7V retention, while AS6C4008-70ZIN matches speed and voltage but requires SOJ socket redesign and delivers just 12.5% of the memory capacity.
Availability
R1WV3216RSD-7SI#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, and medical handhelds requiring stable component supply across extended product lifecycles.
Supply support for R1WV3216RSD-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV3216R Series was designed specifically for low-voltage, battery-backed memory applications demanding zero-refresh operation, ultra-low standby current, and industrial temperature resilience - targeting legacy system replacement and long-lifecycle embedded designs.
FAQ
What is the maximum operating temperature range for the R1WV3216RSD-7SI#B0?
The R1WV3216RSD-7SI#B0 is rated for industrial temperature operation from –40°C to +85°C, as confirmed in the ordering information table (page 2) and DC characteristics (page 6). This range applies to all electrical specifications including access time, standby current, and data retention performance.
Does the R1WV3216RSD-7SI#B0 support byte-mode operation?
Yes, the R1WV3216RSD-7SI#B0 supports byte-mode (x8) operation via the BYTE# pin, but only in the 52-pin µTSOP package - explicitly stated on pages 3 and 4 of the datasheet. When BYTE# = LOW, the device uses A-1 to A20 and DQ0–DQ7; when HIGH, it operates in standard x16 mode.
What is the minimum supply voltage for data retention on the R1WV3216RSD-7SI#B0?
The R1WV3216RSD-7SI#B0 maintains data integrity down to Vcc = 2.0V, as specified in the "Data Retention Characteristics" table (page 14) and confirmed in the "Description" section (page 1). This enables reliable holdover during brown-out conditions without external backup capacitors.
Is the R1WV3216RSD-7SI#B0 pin-compatible with other members of the R1WV3216R family?
Yes - all R1WV3216R µTSOP variants (e.g., R1WV3216RSD-8S%, R1WV3216RSD-7S%) share identical 52-pin µTSOP pinout and function mapping per the "Pin Arrangement" diagram (page 3). Only access time (70 ns vs. 85 ns) and temperature grade differ between -7S and -8S suffixes.
What packaging technology is used in the R1WV3216RSD-7SI#B0?
The R1WV3216RSD-7SI#B0 employs stacked-micro-package technology, integrating two 16Mb Advanced LPSRAM dies into a single 52-pin µTSOP. This is documented in the "Description" section (page 1) and distinguishes it from monolithic 32Mb SRAM architectures.
R1WV3216RSD-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1WV3216RSD-7SI#B0 FAQ
1.How can I place an order for R1WV3216RSD-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV3216RSD-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV3216RSD-7SI#B0 reliable?
The price and inventory of R1WV3216RSD-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV3216RSD-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV3216RSD-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV3216RSD-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV3216RSD-7SI#B0?
R1WV3216RSD-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV3216RSD-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV3216RSD-7SI#B0?
For technical support, including R1WV3216RSD-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV3216RSD-7SI#B0 requirements.
6.How does Aetrix verify that R1WV3216RSD-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV3216RSD-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV3216RSD-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV3216RSD-7SI#B0?
All R1WV3216RSD-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV3216RSD-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV3216RSD-7SI#B0 part is unused and in its original packaging.
Return procedure for R1WV3216RSD-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV3216RSD-7SI#B0 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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