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Renesas R1WV6416RBG-5SI#B0
- Part No.:
- R1WV6416RBG-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1WV6416RBG-5SI#B0.pdf
- Description:
- IC SRAM 64MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,344
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Product details
Overview
R1WV6416RBG-5SI#B0 from Renesas Electronics is a 64Mb low-power static RAM (4M word × 16-bit or 8M word × 8-bit) fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 55ns access time and 8µA typical standby current at 3.0V. It supports battery-backed memory applications requiring zero-refresh operation, TTL-compatible interfacing, and flexible byte/word addressing via LB#/UB#/BYTE# control.
For engineers reviewing the R1WV6416RBG-5SI#B0 datasheet, R1WV6416RBG-5SI#B0 pinout, R1WV6416RBG-5SI#B0 application, or R1WV6416RBG-5SI#B0 equivalent, this device delivers deterministic SRAM timing without clocks or refresh cycles, supports multi-chip expansion via CS1#/CS2#, and provides OR-tie capable three-state I/O for bus sharing in embedded controllers, industrial HMIs, and portable instrumentation.
Technical Context
The R1WV6416RBG-5SI#B0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and sense/write amplifiers, enabling simultaneous access to two 32Mb blocks. Its address buffer, WE#/OE#/CS logic, and DQ selector are fully static, supporting asynchronous read/write cycles with tRC = 55ns and tAA = 55ns under Vcc = 2.7–3.6V and Ta = –40°C to +85°C.
It features dual chip-select architecture (CS1# active-low, CS2 active-high), byte-select capability via LB#/UB#, and optional BYTE#-controlled mode switching between word and byte addressing. Data retention is guaranteed down to Vcc = 2.0V with ICCDR ≤ 160µA at +85°C, and all inputs/outputs meet TTL voltage thresholds (VIH ≥ 2.4V, VIL ≤ 0.4V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 64 Mbit (4,194,304 × 16-bit or 8,388,608 × 8-bit) |
| Access time | 55 ns - guarantees full-speed interface with 18.2 MHz bus without wait states |
| Supply voltage | 2.7–3.6 V - compatible with 3.3V systems and battery-backed operation |
| Standby current | 8 µA typical at 3.0V - enables multi-year backup from coin cells |
| Operating temperature | –40°C to +85°C - qualified for industrial-grade embedded deployment |
| Package | f-BGA, 48-ball, 0.75 mm pitch - compact footprint (≈10.5 mm × 10.5 mm) for high-density PCBs |
| Data retention voltage | 2.0 V minimum - retains data during brown-out or backup power transitions |
Pinout & Package
f-BGA package: 48-ball fine-pitch ball grid array (0.75 mm pitch), top view layout per datasheet page 2. Ball pitch and mechanical dimensions conform to JEDEC MO-245AC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address input (word mode) | 22-bit address bus supporting 4M-word addressing; A–1 used only in byte mode |
| DQ0–DQ15 | Data I/O bidirectional | 16-bit common data bus with three-state outputs; OR-tie capable for bus sharing |
| CS1#, CS2 | Chip select controls | CS1# active-low + CS2 active-high enable hierarchical memory mapping and bank selection |
| WE#, OE#, LB#, UB# | Control strobes | Asynchronous write enable, output enable, and byte-lane gating for partial-word writes |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; no separate I/O or core voltage rails required |
| NC | No-connect | Unbonded balls - must be left floating or connected to Vss per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level timing constraints and refresh controller overhead in microcontroller-based designs |
| TTL-compatible I/O | Direct interface with legacy 3.3V logic families without level-shifting circuitry |
| Low standby current (8 µA) | Enables >5-year data retention on CR2032 coin cell in battery-backup configurations |
| Byte/word mode flexibility | BYTE# pin selects between 16-bit word or 8-bit byte addressing - simplifies firmware porting across architectures |
| OR-tie capable outputs | Allows multiple R1WV6416RBG-5SI#B0 devices to share a common data bus without external bus transceivers |
Applications
| Industrial HMI Memory Buffer | Portable Medical Device Data Log |
|---|---|
Use Scenario: Real-time display buffering in panel-mounted HMIs with ARM Cortex-M7 controllers and SPI/I²C peripherals. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer storing GUI frame buffers, configuration tables, and alarm history with zero-refresh latency. Use Value: 55ns access time ensures sub-60ns pixel update response; 8µA standby current extends battery life beyond 3 years in maintenance-free deployments. |
Use Scenario: Continuous waveform capture in handheld ECG monitors powered by rechargeable Li-ion cells. IC Role / Device Role / Timing Role: High-reliability scratchpad memory holding raw ADC samples prior to compression and wireless upload. Use Value: Data retention down to 2.0V allows uninterrupted logging during brown-out events; f-BGA package enables ultra-thin PCB stacking in <12mm enclosures. |
| Automotive Diagnostic Tool Cache | Avionics Test Equipment Scratchpad |
Use Scenario: OBD-II scan tools requiring fast local storage of DTCs, freeze-frame data, and calibration IDs across vehicle platforms. IC Role / Device Role / Timing Role: Standalone SRAM interfaced directly to an 8-bit MCU's external memory bus for deterministic read/write response. Use Value: –40°C to +85°C rating meets AEC-Q200 ambient requirements; CS1#/CS2 dual-select supports multi-module memory expansion without glue logic. |
Use Scenario: Portable avionics test sets capturing ARINC 429 bus traffic for post-flight analysis in ground support equipment. IC Role / Device Role / Timing Role: High-speed temporary storage for burst-mode protocol captures before transfer to SD card or USB host. Use Value: 48-ball f-BGA minimizes board area while maintaining signal integrity at 18.2 MHz; no refresh simplifies DO-160E EMC compliance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXI | 55ns access, 64Mb (4M×16), 2.2–3.6V supply, 25-ball BGA (smaller footprint but no BYTE# pin) | Lacks BYTE#-controlled byte/word mode switching; requires fixed-width bus design | Prefer when board space is critical and byte-mode operation is unnecessary |
| IS61WV6416BLL-55NLI | 55ns access, 64Mb (4M×16), 2.5–3.6V supply, 48-pin TSOP-I package (not BGA) | TSOP-I package increases PCB area and limits routing density; same functional set otherwise | Choose when legacy through-hole or reflow-compatible TSOP assembly is mandated |
Compared with CY62167EV30LL-55ZSXI and IS61WV6416BLL-55NLI, the R1WV6416RBG-5SI#B0 uniquely combines f-BGA miniaturization, BYTE#-enabled mode flexibility, and industrial temperature support - making it optimal for next-generation portable test gear and battery-constrained edge nodes where both size and interface adaptability matter.
Availability
R1WV6416RBG-5SI#B0 is available at Aetrix Electronics and suitable for industrial HMI, portable medical instrumentation, automotive diagnostics, avionics test equipment, and battery-backed data loggers requiring stable component supply across extended product lifecycles.
Supply support for R1WV6416RBG-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV6416R Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh simplicity, TTL compatibility, and robust data retention - targeting portable instrumentation, industrial control panels, and diagnostic tools.
FAQ
What is the operating voltage range for the R1WV6416RBG-5SI#B0?
The R1WV6416RBG-5SI#B0 operates from a single 2.7V to 3.6V supply. It maintains full functionality-including 55ns access time and TTL-compatible I/O levels-across this range. Data retention is guaranteed down to 2.0V, enabling reliable operation during brown-out conditions or battery backup scenarios. The device draws ≤160µA standby current at +85°C when Vcc ≥ 2.0V.
Does the R1WV6416RBG-5SI#B0 support byte-wide and word-wide data access?
Yes, the R1WV6416RBG-5SI#B0 supports both modes. When BYTE# is high, it operates in 16-bit word mode (A0–A21 addressing 4M words). When BYTE# is low, it switches to 8-bit byte mode using A–1 as the LSB (A0–A21 addressing 8M bytes). This dual-mode capability is confirmed in the Operation Table (page 5) and applies to the f-BGA package variant per datasheet footnote.
What is the pin count and package type of the R1WV6416RBG-5SI#B0?
The R1WV6416RBG-5SI#B0 uses a 48-ball fine-pitch ball grid array (f-BGA) package with 0.75 mm pitch. Its mechanical outline matches JEDEC MO-245AC, measuring approximately 10.5 mm × 10.5 mm. Pin assignments follow the top-view layout shown on page 2 of the datasheet, including dedicated address, data, control, and power balls - with NC balls explicitly marked.
How does the R1WV6416RBG-5SI#B0 handle low-power standby operation?
The R1WV6416RBG-5SI#B0 achieves ultra-low standby current (8 µA typical at 3.0V, ≤160 µA at +85°C) by disabling internal buffers and sense amplifiers when CS2 is driven low or CS1# is high. Standby entry is controlled solely by chip-select signals-no command sequence or register programming is required. This behavior is validated in the DC Characteristics table (page 6) and Low Vcc Data Retention section (page 15).
Is the R1WV6416RBG-5SI#B0 pin-compatible with other members of the R1WV6416R family?
No-pin compatibility is package-dependent. The R1WV6416RBG-5SI#B0 (48-ball f-BGA) has a different pinout than the TSOP-I (48-pin) or µTSOP-II (52-pin) variants. While electrical functionality (addressing, control logic, timing) is consistent across the family, ball/pin assignments-including Vcc/Vss placement and NC locations-differ. Layout reuse requires package-specific footprint verification against the respective pin arrangement diagram.
R1WV6416RBG-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8, 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (8.5x11)
R1WV6416RBG-5SI#B0 FAQ
1.How can I place an order for R1WV6416RBG-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RBG-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RBG-5SI#B0 reliable?
The price and inventory of R1WV6416RBG-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RBG-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RBG-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RBG-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RBG-5SI#B0?
R1WV6416RBG-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RBG-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RBG-5SI#B0?
For technical support, including R1WV6416RBG-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RBG-5SI#B0 requirements.
6.How does Aetrix verify that R1WV6416RBG-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RBG-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RBG-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RBG-5SI#B0?
All R1WV6416RBG-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RBG-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RBG-5SI#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RBG-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RBG-5SI#B0 Tags
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