Renesas R1WV6416RBG-5SI#S0

Overview

R1WV6416RBG-5SI#S0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4M word × 16-bit or 8M word × 8-bit, fabricated in 0.15µm CMOS/TFT process. It operates from a single 2.7–3.6V supply, delivers 55ns access time, draws only 8µA standby current at 3.0V, and supports battery-backed memory retention down to 2.0V - making it suitable for portable instrumentation, industrial HMI backup buffers, and embedded controller data logging.

For engineers reviewing the R1WV6416RBG-5SI#S0 datasheet, R1WV6416RBG-5SI#S0 pinout, R1WV6416RBG-5SI#S0 application, or R1WV6416RBG-5SI#S0 equivalent, key selection criteria include its f-BGA48 package compatibility, TTL-level I/O interface, no-refresh operation, byte/word mode flexibility via LB#/UB#/BYTE#, and guaranteed -40°C to +85°C industrial temperature range.

Technical Context

The R1WV6416RBG-5SI#S0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and sense/write amplifiers, enabling simultaneous access control per byte lane. Its control logic supports three distinct operating modes: word (16-bit), byte (8-bit), and extended byte (A−1 addressing), all managed through dedicated LB#, UB#, and BYTE# inputs.

Unlike DRAMs or pseudo-SRAMs, this device requires no clocks or refresh cycles; data retention is maintained during low-Vcc standby using CS1# or CS2#-controlled entry into retention mode with tCDR = 0ns and tR = 5ms recovery. All address, data, and control pins are TTL-compatible with VIH ≥ 2.4V and VIL ≤ 0.4V across the full supply range.

Key Specifications

Pinout & Package

f-BGA48 package (0.75mm pitch, 6×8 array) with bottom-side solder balls; dimensions 8.0mm × 6.0mm × 1.0mm (height). Pinout conforms to standard 48-pin f-BGA layout for R1WV6416R series.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62167EV30LL-55ZSXI and IS61WV6416BLL-55NLI, the R1WV6416RBG-5SI#S0 offers superior standby efficiency (8µA vs ≥12µA), f-BGA48 packaging for denser layouts, and native BYTE# support for seamless 8/16-bit mode switching - making it optimal for next-generation portable and industrial edge devices where power, size, and interface agility are critical.

Availability

R1WV6416RBG-5SI#S0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial HMI backup buffers, and embedded controller data logging requiring stable component supply across extended product lifecycles.

Supply support for R1WV6416RBG-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1WV6416R Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh operation, extended data retention, and flexible byte/word interfacing - targeting portable medical, test equipment, and industrial control systems.

FAQ

What is the maximum operating frequency supported by R1WV6416RBG-5SI#S0?

The R1WV6416RBG-5SI#S0 does not operate on a clock signal and therefore has no maximum operating frequency specification. Its performance is defined by access timing parameters: tRC = 55ns minimum cycle time and tAA = 55ns address access time, enabling reliable operation in systems with bus clocks up to approximately 18 MHz when interfaced with appropriate wait-state logic.

Does R1WV6416RBG-5SI#S0 support true 8-bit mode operation?

Yes, R1WV6416RBG-5SI#S0 supports true 8-bit mode via the BYTE# pin (active-low), which reconfigures A−1 as an address bit and enables independent LB# or UB# control. When BYTE# = L, the device operates as 8M-word × 8-bit with A−1 functioning as the LSB, allowing full utilization of the 22-bit address space in byte mode.

Can R1WV6416RBG-5SI#S0 retain data at 2.0V, and what is the maximum temperature for that condition?

Yes, R1WV6416RBG-5SI#S0 guarantees data retention at Vcc ≥ 2.0V across its full industrial temperature range of −40°C to +85°C. At +85°C, ICCDR remains ≤ 160µA under retention conditions, ensuring robust operation during extended brown-out events in harsh thermal environments.

Is the f-BGA48 package of R1WV6416RBG-5SI#S0 lead-free and RoHS-compliant?

Yes, R1WV6416RBG-5SI#S0 is manufactured in a lead-free, RoHS-compliant f-BGA48 package per Renesas' standard environmental compliance policy. The device meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and is compatible with standard Pb-free reflow profiles.

How does the R1WV6416RBG-5SI#S0 handle bus contention during write operations?

R1WV6416RBG-5SI#S0 prevents bus contention using OE#-controlled three-state outputs and strict control timing: DQ lines remain high-impedance unless CS1# = L, CS2 = H, and OE# = L simultaneously. During write cycles (WE# = L), outputs are inherently disabled, eliminating risk of conflict with driving sources on the shared data bus.