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Renesas R1WV6416RBG-7SI#B0
- Part No.:
- R1WV6416RBG-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1WV6416RBG-7SI#B0.pdf
- Description:
- IC SRAM 64MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,843
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Product details
Overview
R1WV6416RBG-7SI#B0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4M word × 16-bit or 8M word × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 70ns access time and 8µA typical standby current at 3.0V. It serves as non-volatile-capable main memory or buffer in battery-backed industrial controllers and portable instrumentation.
For engineers reviewing the R1WV6416RBG-7SI#B0 datasheet, R1WV6416RBG-7SI#B0 pinout, R1WV6416RBG-7SI#B0 application, or R1WV6416RBG-7SI#B0 equivalent, this page delivers verified package mapping (48-ball f-BGA), byte/word mode operation, TTL-compatible I/O, no-refresh architecture, and low-voltage data retention down to 2.0V - all confirmed from Renesas REJ03C0368-0100 Rev.1.00.
Technical Context
This device implements a dual-bank 32Mb SRAM architecture with independent column decoders and sense/write amplifiers, enabling simultaneous access to two 32Mb blocks. It supports three operational modes: word mode (16-bit DQ bus), byte mode (8-bit DQ bus using A−1), and byte-select mode (LB#/UB# control).
Control logic uses asynchronous TTL-compatible inputs (CS1#, CS2, WE#, OE#, LB#, UB#, BYTE#) with no internal clocks or refresh circuitry. Standby entry is triggered by CS2 = VIL or CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V, achieving sub-100µA ISB1 at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4,194,304 × 16 or 8,388,608 × 8) |
| Access Time | 70 ns max - defines minimum read cycle duration for timing-critical host interfaces |
| Supply Voltage | 2.7–3.6 V - enables direct interface with 3.3V logic and battery-backed systems |
| Standby Current | 160 µA max at +85°C - ensures multi-year battery life in backup mode |
| Data Retention VCC | 2.0 V min - allows reliable data hold during brown-out or battery sag |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifting in legacy 3.3V microcontroller designs |
| Package | 48-ball f-BGA, 0.75 mm pitch - provides compact footprint and high I/O density for space-constrained PCBs |
Pinout & Package
Package: 48-ball fine-pitch BGA (f-BGA), 0.75 mm ball pitch, 7.0 mm × 8.0 mm body size, top-view pinout per REJ03C0368-0100 Page 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Input (Word Mode) | 22-bit address bus supporting 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Data I/O (Bidirectional) | 16-bit common data bus; high-impedance when OE# = VIH or during standby |
| CS1#, CS2 | Chip Select Inputs | Two-level chip enable: CS1# active-low primary select; CS2 active-high secondary control for retention mode |
| WE#, OE#, LB#, UB# | Control Inputs | Asynchronous write/read/byte-enable signals - no clock required; OR-tie capable for bus sharing |
| Vcc, Vss | Power & Ground | Single 2.7–3.6V supply; dual Vss balls improve noise immunity and thermal dissipation |
| NC | No Connect | Ball positions A1, B1, C1, D1, E1, F1, G1, H1 are unconnected - must be left floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller and associated timing overhead in embedded systems |
| Byte/word mode flexibility | Configurable via BYTE# pin (supported in TSOP/µTSOP; not present on f-BGA variant R1WV6416RBG) |
| Low-voltage data retention | Maintains stored data at Vcc ≥ 2.0V with ICCDR ≤ 160 µA at +85°C - critical for battery backup |
| TTL-compatible I/O | Direct interface with legacy 3.3V microcontrollers and FPGAs without level shifters |
| Three-state outputs with OR-tie | Enables shared data bus architectures without external bus transceivers |
Applications
| Industrial Data Logger | Medical Portable Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂) with local buffering before wireless upload. IC Role / Device Role / Timing Role: High-reliability, low-power SRAM buffer holding up to 8M bytes of raw waveform data between power cycles. Use Value: 8µA typical standby current extends battery life; 2.0V data retention prevents loss during brief power interruptions. |
Use Scenario: Real-time display buffering and alarm history storage in handheld diagnostic devices. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M4-based UI engine and signal processing pipeline. Use Value: 70ns access time meets real-time display refresh deadlines; TTL compatibility simplifies interface to display controller ASIC. |
| Telecom Remote Terminal Unit | Automotive Infotainment Head Unit |
Use Scenario: Storing configuration tables and firmware patch cache in outdoor cellular base station remote units. IC Role / Device Role / Timing Role: Non-refreshing memory for field-upgradable parameter sets and runtime logs across wide temperature range. Use Value: −40°C to +85°C operation (I-grade) ensures reliability in uncontrolled enclosures; f-BGA package resists vibration-induced solder fatigue. |
Use Scenario: Audio buffer and GUI asset cache in automotive head units with stop-start battery management. IC Role / Device Role / Timing Role: Low-voltage retention memory preserving navigation state and user preferences during ignition-off periods. Use Value: 2.0V data retention threshold aligns with vehicle battery sag profiles; 48-ball f-BGA enables dense routing beneath SoC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 512K × 32 organization; 70ns access; 3.0–3.6V supply; 25µA standby at +85°C | Higher bus width (32-bit) but lower density (16Mb); wider voltage range excludes 2.7V operation | Choose for 32-bit host interfaces requiring higher bandwidth, not for drop-in replacement |
| IS61WV6416BLL-70TLI | Same 4M × 16 organization; 70ns access; 2.5–3.6V supply; 20µA standby at +85°C; 48-pin TSOP-I package | Lower minimum Vcc (2.5V); higher standby current; leaded TSOP-I incompatible with f-BGA layout | Choose for cost-sensitive through-hole or reflow-compatible designs where board space permits larger package |
Compared with CY62167EV30LL-70ZSXI and IS61WV6416BLL-70TLI, the R1WV6416RBG-7SI#B0 offers superior low-voltage retention (2.0V vs. 2.5V/2.7V), lowest standby current in its class, and f-BGA packaging optimized for high-density automotive/industrial PCBs - making it optimal for battery-backed, space-constrained applications demanding extended data hold.
Availability
R1WV6416RBG-7SI#B0 is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, telecom remote terminal units, and automotive infotainment head units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1WV6416RBG-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV6416R Series was designed specifically for low-power, battery-operated memory applications requiring zero-refresh operation, wide temperature tolerance, and robust data retention - targeting portable instrumentation, remote sensing, and mission-critical embedded systems.
FAQ
What is the operating temperature range for R1WV6416RBG-7SI#B0?
The R1WV6416RBG-7SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number. This is confirmed in the Ordering Information table (Page 1) and Recommended Operating Conditions (Page 6) of Renesas document REJ03C0368-0100 Rev.1.00. The device maintains full functionality-including 70ns access time and 160µA max standby current-across this full range.
Does R1WV6416RBG-7SI#B0 support byte-mode addressing?
Yes, R1WV6416RBG-7SI#B0 supports byte-mode operation using address line A−1, but the BYTE# pin required to configure this mode is not present on the 48-ball f-BGA package (Page 3, Pin Description note). Byte-mode functionality is retained via A−1 input, though external logic must manage byte-enable sequencing since BYTE# is omitted in this variant.
What is the minimum supply voltage for data retention on R1WV6416RBG-7SI#B0?
The R1WV6416RBG-7SI#B0 guarantees data retention down to VCC = 2.0 V, as specified in the Low Vcc Data Retention Characteristics table (Page 15). At this voltage, the device draws ≤160 µA (at +85°C) while preserving stored contents - a key feature for battery-backup applications experiencing brown-out conditions.
Is R1WV6416RBG-7SI#B0 pin-compatible with other packages in the R1WV6416R family?
No, R1WV6416RBG-7SI#B0 is not pin-compatible with the TSOP (I) or µTSOP (II) variants. Its 48-ball f-BGA footprint (Page 2) differs electrically and physically from the 48-pin TSOP and 52-pin µTSOP packages. Pin assignments, ball/pad layouts, and thermal/mechanical requirements are unique to the f-BGA variant - PCB redesign is required for substitution.
What are the key timing parameters that define R1WV6416RBG-7SI#B0's read performance?
The R1WV6416RBG-7SI#B0 specifies tRC = 70 ns (read cycle time), tAA = 70 ns (address access time), and tOE = 35 ns (output enable to valid data) under industrial temperature conditions (Page 8). These values ensure deterministic timing margins for 14 MHz synchronous bus interfaces and support burst-read patterns in microcontroller-based systems without wait states.
R1WV6416RBG-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16, 8M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (8.5x11)
R1WV6416RBG-7SI#B0 FAQ
1.How can I place an order for R1WV6416RBG-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RBG-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RBG-7SI#B0 reliable?
The price and inventory of R1WV6416RBG-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RBG-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RBG-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RBG-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RBG-7SI#B0?
R1WV6416RBG-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RBG-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RBG-7SI#B0?
For technical support, including R1WV6416RBG-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RBG-7SI#B0 requirements.
6.How does Aetrix verify that R1WV6416RBG-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RBG-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RBG-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RBG-7SI#B0?
All R1WV6416RBG-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RBG-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RBG-7SI#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RBG-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RBG-7SI#B0 Tags
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M24C02-WMN6TP
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