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Renesas R1WV6416RBG-7SR#B0
- Part No.:
- R1WV6416RBG-7SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1WV6416RBG-7SR#B0.pdf
- Description:
- STANDARD SRAM, 4MX16, 70NS
- Quantity:
- Payment:
- Shipping:
Inventory:884
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Product details
Overview
R1WV6416RBG-7SR#B0 from Renesas Electronics is a 64Mb low-power static RAM (4M word × 16-bit or 8M word × 8-bit) fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 70ns access time and 8µA typical standby current at 3.0V. It supports battery-backed memory applications requiring no refresh, TTL-compatible I/O, and flexible byte/word addressing via LB#/UB#/BYTE# control.
For engineers reviewing the R1WV6416RBG-7SR#B0 datasheet, R1WV6416RBG-7SR#B0 pinout, R1WV6416RBG-7SR#B0 application, or R1WV6416RBG-7SR#B0 equivalent, this device serves as a drop-in replacement for legacy LPSRAMs in portable instrumentation, industrial HMIs, and embedded controllers where low-voltage operation, data retention down to 2.0V, and TSOP/f-BGA package flexibility are critical.
Technical Context
The R1WV6416RBG-7SR#B0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and sense/write amplifiers, enabling concurrent access to two 2M-word × 16-bit sub-arrays. Its control logic supports three operational modes-word (16-bit), byte (8-bit), and extended byte (A−1 addressing)-via BYTE#, LB#, and UB# pins, with CS1# and CS2# enabling hierarchical chip select for memory expansion.
Timing is fully static: no clocks or refresh required. Standby mode is entered when CS2 is low or CS1# is high, reducing current to ≤160µA at +85°C. Data retention is guaranteed at VCC ≥2.0V with tCDR = 0ns and tR = 5ms recovery, validated under bias conditions including CS2-controlled, CS1#-controlled, and LB#/UB#-controlled retention entry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4,194,304 × 16-bit or 8,388,608 × 8-bit) |
| Supply Voltage | 2.7–3.6 V - Enables direct interface with 3.3V logic and battery-backed systems without level shifters |
| Access Time | 70 ns - Guarantees timing compliance in 14.3 MHz bus systems with margin |
| Standby Current | 8 µA typical at 3.0V/25°C - Supports multi-year battery life in always-on backup memory |
| Data Retention VCC | 2.0 V minimum - Maintains stored data during brown-out or backup power switchover |
| Package | f-BGA, 48-ball, 0.75 mm pitch - Reduces PCB area by >40% vs. 48-pin TSOP while enabling high-density routing |
| I/O Compatibility | TTL - Direct connection to legacy microcontrollers and FPGAs without bus buffers |
Pinout & Package
f-BGA package: 48-ball fine-pitch ball grid array (0.75 mm pitch), 8.0 mm × 6.5 mm footprint, top-side marking includes "R1WV6416RBG-7SR#B0" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs (word mode) | 22-bit address bus supporting full 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common data bus with three-state outputs; OR-tie capable for bus sharing |
| CS1#, CS2 | Chip select inputs | Two-level decode: CS2 enables internal buffers; CS1# selects active bank - enables daisy-chained expansion |
| WE#, OE#, LB#, UB# | Control inputs | Independent write enable, output enable, and byte-lane gating - allows simultaneous lower/upper byte writes |
| BYTE# | Mode configuration input | Enables byte-addressing mode (A−1 valid); supported only in TSOP/µTSOP packages - not connected in f-BGA variant |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; dual Vss balls improve noise immunity in high-speed switching |
| NC | No-connect | Unbonded pads - must be left floating or tied to Vss per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | True static RAM architecture eliminates DRAM-like refresh circuitry and associated timing overhead |
| Low-voltage data retention | Guaranteed data hold at VCC ≥2.0V with ICCDR ≤160µA at +85°C - ideal for coin-cell backup |
| Flexible memory expansion | CS1#, CS2, LB#, UB# allow seamless 16-bit/8-bit width scaling and multi-chip addressing without glue logic |
| TTL-compatible I/O | VIH = 2.4V min, VOL = 0.4V max - interoperable with 3.3V and 5V-tolerant microcontrollers |
| Three-state OR-tie capability | DQ outputs support wired-OR bus configurations - simplifies shared-memory arbitration in multi-master systems |
Applications
| Portable Medical Instrumentation | Industrial HMI Controllers |
|---|---|
Use Scenario: Battery-powered handheld ECG monitor storing waveform buffers and calibration data during AC power loss. IC Role / Device Role / Timing Role: Non-volatile backup memory holding real-time patient data with zero refresh overhead and 2.0V retention threshold. Use Value: Enables >5-year coin-cell lifetime while preserving critical diagnostics across power cycles without external EEPROM or FRAM. |
Use Scenario: Touchscreen-based PLC interface caching recipe parameters and alarm logs in factory-floor environments. IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfacing directly to ARM9-based controller via 16-bit parallel bus. Use Value: Eliminates wait states at 70ns access time and withstands wide temperature swings (−40°C to +85°C) without derating. |
| Avionics Data Recorders | Telecom Line Cards |
Use Scenario: Crash-survivable flight data recorder retaining last 25 hours of sensor telemetry during emergency power-down. IC Role / Device Role / Timing Role: Primary volatile memory with guaranteed data retention at 2.0V and <5ms recovery after brown-out. Use Value: Meets DO-160 Section 22 lightning-induced transient immunity requirements via low-impedance Vcc/Vss ball placement. |
Use Scenario: Packet buffering in carrier-grade Ethernet switch line cards requiring deterministic latency and low power. IC Role / Device Role / Timing Role: Low-jitter, clockless SRAM serving as first-level packet buffer between PHY and MAC layers. Use Value: Delivers 70ns read/write cycles with <25ns tOE and <5ns tOLZ - reduces packet processing jitter below 10ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 70ns access, 512K × 32-bit organization, 3.3V-only supply (3.135–3.465V), 25µA standby at 3.3V/25°C | Requires 32-bit data bus; lacks byte-mode addressing and 2.0V retention | Preferred for new 32-bit designs needing higher density; not suitable for battery-retention-critical systems |
| IS61LV51216AL-70TQLI | 70ns access, 512K × 16-bit (8Mb), 3.0–3.6V supply, 20µA standby at 3.3V/25°C, TSOP-44 package only | No f-BGA option; no BYTE# pin; higher standby current erodes battery life | Valid drop-in for space-constrained TSOP layouts but unsuitable for high-density BGA routing or ultra-low-power retention |
Compared with CY62167EV30LL-70ZSXI and IS61LV51216AL-70TQLI, the R1WV6416RBG-7SR#B0 uniquely combines 64Mb density, 2.0V data retention, f-BGA packaging, and true byte/word mode flexibility - making it the sole option for compact, battery-backed, mixed-width embedded memory subsystems.
Availability
R1WV6416RBG-7SR#B0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial HMI controllers, avionics data recorders, and telecom line cards requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for R1WV6416RBG-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The R1WV6416R Series was designed specifically for low-power, battery-operated embedded systems requiring reliable, no-refresh memory with extended voltage retention - targeting portable instrumentation, industrial controls, and communications infrastructure.
FAQ
What is the maximum operating temperature range for the R1WV6416RBG-7SR#B0?
The R1WV6416RBG-7SR#B0 is rated for industrial temperature operation from −40°C to +85°C (I-version), verified across all DC and AC specifications including 70ns access time, 160µA standby current, and 2.0V data retention. This rating applies to the f-BGA package variant and is confirmed in the REJ03C0368-0100 datasheet Rev.1.00, page 5.
Does the R1WV6416RBG-7SR#B0 support byte-mode addressing?
No, the R1WV6416RBG-7SR#B0 does not support byte-mode addressing because the BYTE# pin is not implemented in the 48-ball f-BGA package. Byte-mode functionality (A−1 addressing and BYTE# control) is exclusive to the 48-pin TSOP (I) and 52-pin µTSOP (II) variants per datasheet page 3 and page 10. The R1WV6416RBG-7SR#B0 operates only in word mode (16-bit DQ width) or standard 8-bit mode using LB#/UB# alone.
What is the minimum supply voltage required to retain data in the R1WV6416RBG-7SR#B0?
The R1WV6416RBG-7SR#B0 guarantees data retention down to VCC = 2.0V, as specified in the Low Vcc Data Retention Characteristics table (page 15). At this voltage, ICCDR remains ≤160µA at +85°C, and the device enters retention mode within tCDR = 0ns when CS2 is driven low or CS1# is driven high, with full data recovery in tR = 5ms.
Can the R1WV6416RBG-7SR#B0 be used as a direct replacement for the R1WV6416RSA-7S% in an existing TSOP design?
No, the R1WV6416RBG-7SR#B0 is not a direct replacement for the R1WV6416RSA-7S% due to incompatible packages (48-ball f-BGA vs. 48-pin TSOP-I) and missing BYTE# functionality. While both share identical 70ns access time, 2.7–3.6V supply, and core timing, the f-BGA variant requires PCB redesign, re-routing, and removal of BYTE# logic. Pin-to-pin compatibility exists only within the same package family.
What is the typical standby current of the R1WV6416RBG-7SR#B0 at 3.0V and 25°C?
The typical standby current of the R1WV6416RBG-7SR#B0 is 8 µA at VCC = 3.0V and TA = 25°C, as specified in the DC Characteristics table (page 6, ISB parameter). This value is measured under standard standby conditions (CS2 = VIL or CS1# = VIH) and represents the center of distribution - not a guaranteed minimum or maximum.
R1WV6416RBG-7SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1WV6416RBG-7SR#B0 FAQ
1.How can I place an order for R1WV6416RBG-7SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RBG-7SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RBG-7SR#B0 reliable?
The price and inventory of R1WV6416RBG-7SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RBG-7SR#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RBG-7SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RBG-7SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RBG-7SR#B0?
R1WV6416RBG-7SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RBG-7SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RBG-7SR#B0?
For technical support, including R1WV6416RBG-7SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RBG-7SR#B0 requirements.
6.How does Aetrix verify that R1WV6416RBG-7SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RBG-7SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RBG-7SR#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RBG-7SR#B0?
All R1WV6416RBG-7SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RBG-7SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RBG-7SR#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RBG-7SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RBG-7SR#B0 Tags
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