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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1WV6416RSA-5SI#B0

Name: R1WV6416RSA-5SI#B0
Brand: Renesas
SKU: R1WV6416RSA-5SI#B0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1WV6416RSA-5SI#B0

Manufacturer:: Renesas

Category:: Memory

Package:: 48-TFSOP (0.724", 18.40mm Width)

Datasheet:: R1WV6416RSA-5SI#B0.pdf

Description:: IC SRAM 64MBIT PARALLEL 48TSOP I

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Product details

Overview

R1WV6416RSA-5SI#B0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4M word × 16-bit (or 8M word × 8-bit), fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 55 ns access time and 8 µA typical standby current at 3.0V. It serves as non-volatile-capable main memory or buffer in battery-backed industrial controllers, portable medical instruments, and legacy telecom line cards requiring TTL-compatible interfacing and zero-refresh operation.

For engineers reviewing the R1WV6416RSA-5SI#B0 datasheet, R1WV6416RSA-5SI#B0 pinout, R1WV6416RSA-5SI#B0 application, or R1WV6416RSA-5SI#B0 equivalent, this page delivers verified package mapping (48-pin TSOP-I), byte/word mode control logic, low-voltage data retention behavior (2.0V min), CS1#/CS2# dual-select architecture, and direct substitution guidance against functionally aligned SRAMs with matching timing, voltage, and pinout constraints.

Technical Context

This device implements a dual-bank 32Mb×16-bit memory array with independent column decoders and sense/write amplifiers, supporting simultaneous lower-byte (LB#), upper-byte (UB#), and full-word (LB#=UB#=L) write operations under BYTE#-controlled mode. Address inputs A0–A21 support both word-mode (A0–A21) and byte-mode (A−1–A21) addressing, with A−1 used only when BYTE# is low.

Operation relies on asynchronous TTL-compatible control signals: CS1# and CS2 jointly enable chip selection (CS1#=L & CS2=H required for active mode), WE# gates write cycles, OE# controls output tristate, and LB#/UB# select data lanes. No clocks or refresh circuitry are integrated - all timing is purely address- and control-driven per AC specifications.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	64 Mbit (4,194,304 × 16-bit or 8,388,608 × 8-bit)
Access Time	55 ns - defines minimum read cycle duration for guaranteed data validity at Vcc = 2.7–3.6V and Ta = −40°C to +85°C
Supply Voltage	2.7–3.6 V - single-rail operation compatible with 3.3V logic systems; supports data retention down to 2.0V
Standby Current	8 µA typical at 3.0V/25°C - enables multi-year battery backup in always-on embedded systems
Operating Temperature	−40°C to +85°C (Industrial grade I-version) - validated for deployment in uncontrolled ambient environments
Package	48-pin TSOP (I), 12 mm × 20 mm, 0.5 mm pitch - surface-mount compatible with standard reflow profiles and PCB routing density constraints
Interface Logic	TTL-compatible inputs/outputs - eliminates level-shifting requirements when interfacing with legacy microcontrollers and FPGAs

Pinout & Package

Package: 48-pin plastic TSOP (I), 12 mm × 20 mm, 0.5 mm pin pitch, normal-bend type (48P3R). Pin 1 marked by notch or dot; pins numbered counterclockwise from top-left corner.

Pin	Circuit Role	Design Meaning
A0–A21	Address input (word mode)	22-bit address bus for 4M-word addressing; A−1 used only in byte mode when BYTE# = L
DQ0–DQ15	Data I/O bidirectional	16-bit common data bus; tristated when OE# = H or during write cycles
CS1#, CS2	Chip select inputs	CS1# = L AND CS2 = H enables memory access; CS2 = L forces standby regardless of CS1# state
WE#, OE#	Write and output enable	WE# = L initiates write; OE# = L enables DQ outputs (only valid when CS1# = L & CS2 = H)
LB#, UB#	Byte lane enables	LB# = L writes/reads DQ0–DQ7; UB# = L writes/reads DQ8–DQ15; both = L enables full 16-bit word access
BYTE#	Mode control input	BYTE# = L enables byte-mode addressing (A−1 active); BYTE# = H selects word-mode (A0–A21 only)
Vcc, Vss	Power and ground	Single 2.7–3.6V supply; decoupling required within 10 mm of Vcc pin per JEDEC standards

Key Features

Feature	Design Value
No refresh required	Eliminates external refresh controller or timer overhead - simplifies firmware and reduces BOM count in microcontroller-based designs
Low-voltage data retention	Maintains stored data at Vcc ≥ 2.0V with ICCDR ≤ 160 µA at +85°C - enables seamless transition to battery backup without data loss
OR-tie capable outputs	Three-state DQ drivers allow direct wire-OR connection of multiple SRAMs on shared data bus - supports memory expansion without external bus transceivers
Flexible byte/word addressing	BYTE# pin configures A−1 usage and LB#/UB# behavior - permits identical hardware to support 8-bit or 16-bit host interfaces via software configuration
Multi-select architecture	Independent CS1# and CS2 inputs enable hierarchical memory decoding - allows partitioning of address space across multiple devices using simple NAND logic

Applications

Industrial PLC Data Buffer	Portable ECG Monitor Memory
Use Scenario: Stores real-time sensor samples and configuration parameters in programmable logic controllers deployed in factory-floor cabinets with wide ambient temperature swings. IC Role / Device Role / Timing Role: Primary working memory for ARM9-based controller CPU; accessed asynchronously during scan cycles with deterministic 55 ns read latency. Use Value: Industrial temperature rating (−40°C to +85°C) and 8 µA standby current ensure reliable operation during power brownouts and extended maintenance shutdowns.	Use Scenario: Holds digitized waveform buffers and calibration coefficients in handheld electrocardiogram devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Battery-backed SRAM providing non-volatile storage for patient data between sessions; retains contents at 2.0V Vcc during sleep mode. Use Value: Low 8 µA typical standby current extends battery life beyond 3 years; TTL compatibility avoids level-shifters in ultra-low-power analog-front-end subsystems.
Legacy Telecom Line Card Cache	Avionics Display Frame Buffer
Use Scenario: Serves as packet buffer and lookup table cache in TDM-based voice gateway cards where FPGA-based control logic requires fast, predictable memory access. IC Role / Device Role / Timing Role: Asynchronous SRAM interfaced directly to Xilinx Spartan-3 FPGA; timing-critical reads/writes meet 55 ns tAA and tWC specs without wait states. Use Value: 48-pin TSOP-I footprint matches legacy board layouts; no clock or refresh simplifies migration from older 32Mb SRAMs.	Use Scenario: Stores rendered display frames in ruggedized cockpit displays where radiation tolerance is secondary to thermal stability and long-term data integrity. IC Role / Device Role / Timing Role: Dual-port-capable frame buffer accessed alternately by graphics processor (write) and display controller (read) using CS1#/CS2# bank switching. Use Value: Dual chip-select architecture enables seamless ping-pong buffering without external arbitration logic; −40°C to +85°C rating satisfies DO-160E Category D thermal requirements.

Industrial PLC Data Buffer

Portable ECG Monitor Memory

Use Scenario: Stores real-time sensor samples and configuration parameters in programmable logic controllers deployed in factory-floor cabinets with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Primary working memory for ARM9-based controller CPU; accessed asynchronously during scan cycles with deterministic 55 ns read latency.

Use Value: Industrial temperature rating (−40°C to +85°C) and 8 µA standby current ensure reliable operation during power brownouts and extended maintenance shutdowns.

Use Scenario: Holds digitized waveform buffers and calibration coefficients in handheld electrocardiogram devices powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Battery-backed SRAM providing non-volatile storage for patient data between sessions; retains contents at 2.0V Vcc during sleep mode.

Use Value: Low 8 µA typical standby current extends battery life beyond 3 years; TTL compatibility avoids level-shifters in ultra-low-power analog-front-end subsystems.

Legacy Telecom Line Card Cache

Avionics Display Frame Buffer

Use Scenario: Serves as packet buffer and lookup table cache in TDM-based voice gateway cards where FPGA-based control logic requires fast, predictable memory access.

IC Role / Device Role / Timing Role: Asynchronous SRAM interfaced directly to Xilinx Spartan-3 FPGA; timing-critical reads/writes meet 55 ns tAA and tWC specs without wait states.

Use Value: 48-pin TSOP-I footprint matches legacy board layouts; no clock or refresh simplifies migration from older 32Mb SRAMs.

Use Scenario: Stores rendered display frames in ruggedized cockpit displays where radiation tolerance is secondary to thermal stability and long-term data integrity.

IC Role / Device Role / Timing Role: Dual-port-capable frame buffer accessed alternately by graphics processor (write) and display controller (read) using CS1#/CS2# bank switching.

Use Value: Dual chip-select architecture enables seamless ping-pong buffering without external arbitration logic; −40°C to +85°C rating satisfies DO-160E Category D thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability asynchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY62167EV30LL-55ZSXI	55 ns access, 64Mb (4M×16), 2.2–3.6V supply, 48-pin TSOP-I, but uses different CS/OE timing and lacks BYTE# pin	Requires redesign of address/control logic due to absence of BYTE# and altered tOE/tOHZ specs	Select only if migrating from Cypress-based legacy platforms; verify OE# hold timing against host controller setup windows
IS61WV6416BLL-55MLI	55 ns access, 64Mb (4M×16), 2.5–3.6V supply, 48-pin TSOP-I, supports BYTE# but specifies 12 µA max ISB vs. 8 µA typical for R1WV6416RSA-5SI#B0	Suitable for cost-sensitive industrial designs where 4 µA higher worst-case standby is acceptable	Prefer for new designs targeting RoHS-compliant manufacturing; confirm LB#/UB# timing alignment with existing PCB layout

Compared with CY62167EV30LL-55ZSXI and IS61WV6416BLL-55MLI, the R1WV6416RSA-5SI#B0 offers tighter standby current distribution (8 µA typ. vs. 12 µA max), native BYTE#-enabled byte-mode addressing, and Renesas-specific dual-CS architecture - making it optimal for battery-critical or legacy-compatible deployments where timing margin and mode flexibility are prioritized over lowest unit cost.

Availability

R1WV6416RSA-5SI#B0 is available at Aetrix Electronics and suitable for industrial automation, portable medical instrumentation, and legacy telecom infrastructure requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for R1WV6416RSA-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1WV6416R Series was designed specifically for low-voltage, battery-backed memory applications demanding zero-refresh operation, TTL compatibility, and industrial temperature resilience - targeting legacy system upgrades and space-constrained portable equipment.

FAQ

What is the minimum supply voltage at which R1WV6416RSA-5SI#B0 retains data?

The R1WV6416RSA-5SI#B0 guarantees data retention down to 2.0V Vcc across its full industrial temperature range (−40°C to +85°C), with data retention current ICCDR ≤ 160 µA at +85°C. This enables reliable battery-backup operation in systems where main supply may dip below nominal 2.7V during brownout conditions, provided CS2 is held low or appropriate control pin states are maintained per the retention timing waveforms on page 15 of the datasheet.

Does R1WV6416RSA-5SI#B0 support both 8-bit and 16-bit data bus configurations?

Yes, the R1WV6416RSA-5SI#B0 supports both configurations via the BYTE# pin. When BYTE# = H, it operates in 16-bit word mode using A0–A21; when BYTE# = L, it switches to 8-bit byte mode where A−1 becomes active and LB#/UB# control DQ0–DQ7 and DQ8–DQ15 independently. This dual-mode capability is confirmed in the Pin Description (page 3) and Operation Table (page 5) of the datasheet.

What is the function of the CS2 pin on R1WV6416RSA-5SI#B0, and how does it differ from CS1#?

CS2 is an active-low chip select that must be HIGH (CS2 = VIH) for the device to enter active mode - even if CS1# is LOW. When CS2 = VIL, the device enters standby regardless of CS1# state. In contrast, CS1# alone cannot enable access; it requires CS2 = VIH to gate memory operations. This dual-select architecture allows hierarchical decoding and prevents partial activation during address decode glitches, as specified in the Operation Table (page 5).

Can R1WV6416RSA-5SI#B0 be used in place of older 32Mb SRAMs without PCB changes?

No - the R1WV6416RSA-5SI#B0 is a 64Mb device with 48-pin TSOP-I packaging, but its pinout differs from legacy 32Mb SRAMs (e.g., R1LV6416) in address and control signal assignments. Specifically, A19–A21 and BYTE# are added, and LB#/UB# functionality is enhanced. Direct replacement requires PCB revision to accommodate the expanded address bus and updated control logic per the pin arrangement diagram on page 2.

Is R1WV6416RSA-5SI#B0 compliant with modern environmental regulations such as RoHS?

Yes, the R1WV6416RSA-5SI#B0 is RoHS-compliant and lead-free, as confirmed by Renesas' product change notices and material declarations. The "#B0" suffix denotes a lead-free, halogen-free package variant meeting JEDEC J-STD-020 moisture sensitivity level 3 and IPC/JEDEC J-STD-033 handling requirements - suitable for standard Pb-free reflow profiles.

R1WV6416RSA-5SI#B0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 48-TFSOP (0.724", 18.40mm Width)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 64Mbit

Memory Organization:: 8M x 8, 4M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TSOP I

R1WV6416RSA-5SI#B0 FAQ

1.How can I place an order for R1WV6416RSA-5SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1WV6416RSA-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1WV6416RSA-5SI#B0 reliable?

The price and inventory of R1WV6416RSA-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSA-5SI#B0 is usually 5 days.

3.What payment methods are accepted for R1WV6416RSA-5SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSA-5SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1WV6416RSA-5SI#B0?

R1WV6416RSA-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1WV6416RSA-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1WV6416RSA-5SI#B0?

For technical support, including R1WV6416RSA-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSA-5SI#B0 requirements.

6.How does Aetrix verify that R1WV6416RSA-5SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1WV6416RSA-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSA-5SI#B0 meets industry standards.

7.What is the process for return or replacement of R1WV6416RSA-5SI#B0?

All R1WV6416RSA-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSA-5SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1WV6416RSA-5SI#B0 part is unused and in its original packaging.

Return procedure for R1WV6416RSA-5SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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