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Renesas R1WV6416RSA-5SR#B0
- Part No.:
- R1WV6416RSA-5SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1WV6416RSA-5SR#B0.pdf
- Description:
- STANDARD SRAM, 4MX16, 55NS
- Quantity:
- Payment:
- Shipping:
Inventory:623
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Product details
Overview
R1WV6416RSA-5SR#B0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4,194,304 × 16-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 2.7–3.6 V supply with 55 ns access time and 8 µA typical standby current at 3.0 V. It serves as non-volatile-capable memory in battery-backed systems requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1WV6416RSA-5SR#B0 datasheet, R1WV6416RSA-5SR#B0 pinout, R1WV6416RSA-5SR#B0 application, or R1WV6416RSA-5SR#B0 equivalent, key selection criteria include its TSOP (I) 48-pin package, byte/word mode flexibility via BYTE#, LB#/UB# controls, and data retention down to 2.0 V with sub-100 µA current at +70°C.
Technical Context
The R1WV6416RSA-5SR#B0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and shared address buffers, supporting both word (16-bit) and byte (8-bit) modes via the BYTE# pin. Its control logic accepts asynchronous CS1#, CS2, WE#, OE#, LB#, and UB# signals without clocks or refresh cycles.
It features three-state bidirectional DQ0–DQ15 I/Os with OR-tie capability, TTL-compatible input thresholds (VIH = 2.4 V, VIL = 0.4 V), and low-impedance output drive (VOH ≥ 2.4 V at –0.5 mA, VOL ≤ 0.4 V at 2 mA), enabling direct connection to legacy microcontroller buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Mbit (4M × 16 or 8M × 8), enabling compact high-bandwidth buffer storage in space-constrained designs |
| Access time | 55 ns max - supports 18.2 MHz burst read/write on standard 8/16-bit microcontrollers |
| Supply voltage | 2.7–3.6 V - compatible with Li-ion battery rails and regulated 3.3 V systems without level shifting |
| Standby current | 8 µA typical at 3.0 V - extends battery life in always-on backup memory applications |
| Data retention VCC | 2.0 V min - retains contents during brown-out or battery-switchover without external capacitor hold-up |
| Operating temperature | 0 to +70 °C (R-grade) - qualified for commercial industrial control and instrumentation environments |
| Package | 48-pin TSOP (I), 12 mm × 20 mm, 0.5 mm pitch - surface-mount compatible with standard reflow profiles |
Pinout & Package
Package: 48-pin plastic TSOP (I), 12 mm × 20 mm, 0.5 mm pin pitch, normal-bend leads.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs (word mode) | 22-bit address bus supporting full 4M-word addressing; A–1 used only in byte mode |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common bus with three-state control; enables OR-tie for multi-device data sharing |
| CS1#, CS2 | Chip select inputs | Two-level hierarchical enable: CS1# active-low primary select; CS2 active-high secondary control for power-down/data retention |
| WE#, OE#, LB#, UB# | Control inputs | Asynchronous write/read/byte-enable logic - no clock required; supports partial-word writes without bus contention |
| BYTE# | Mode configuration | Selects byte (8-bit) vs. word (16-bit) operation; supported only in TSOP (I) and µTSOP (II) packages |
| Vcc, Vss | Power and ground | Single 2.7–3.6 V supply; decoupling required per JEDEC standards for stable 55 ns timing |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates DRAM controller overhead and timing-critical refresh cycles in embedded firmware |
| TTL-compatible I/O | Direct interface to legacy 3.3 V or 5 V microcontrollers without level translators |
| Byte/word mode switching | Runtime reconfiguration via BYTE# pin enables flexible memory mapping for mixed-data-width peripherals |
| Low-voltage data retention | Maintains stored data at Vcc ≥ 2.0 V with <100 µA current at +70°C - critical for battery-switchover reliability |
| OR-tie capable outputs | Allows multiple R1WV6416RSA-5SR#B0 devices to share a common data bus without external logic |
Applications
| Industrial HMI Data Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor logs and UI state in panel-mounted HMIs with intermittent power. IC Role / Device Role / Timing Role: Non-volatile buffer memory holding configuration and event history during AC loss. Use Value: 8 µA standby current and 2.0 V data retention enable >72-hour backup on coin-cell batteries without supercapacitors. | Use Scenario: Retaining calibration coefficients and patient settings in portable diagnostic equipment. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical parameters across power cycles and firmware updates. Use Value: Zero-refresh operation ensures deterministic timing behavior in safety-critical boot sequences and avoids memory corruption risks. |
| Automotive Infotainment Cache | Telecom Base Station Control Memory |
Use Scenario: Caching navigation map tiles and audio metadata in head-unit systems with variable 12 V supply. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced directly to ARM-based SoCs via 16-bit parallel bus. Use Value: 55 ns access time and TTL compatibility eliminate glue logic, reducing BOM cost and PCB area in automotive Tier-1 modules. | Use Scenario: Storing FPGA configuration registers and real-time control tables in remote radio units. IC Role / Device Role / Timing Role: Asynchronous control memory accessed by baseband processors during signal processing bursts. Use Value: Dual chip-select (CS1#/CS2) and byte-enable (LB#/UB#) support concurrent access arbitration in multi-processor subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXI | 4M × 16-bit, 55 ns, 3.0–3.6 V, 35-pin SOJ package - no BYTE# pin, higher ISB (25 µA typ) | Lacks byte/word mode flexibility; requires board redesign for TSOP-to-SOJ footprint change | Choose when footprint compatibility is secondary to vendor consolidation with Cypress/Infineon portfolio |
| IS61WV6416BLL-55NLI | 4M × 16-bit, 55 ns, 2.5–3.6 V, 48-pin TSOP (I) - supports BYTE# but rated for –40°C to +85°C (I-grade) | Broader temperature range suits extended industrial deployments; slightly lower Vcc min (2.5 V) | Prefer for new designs targeting wide-temperature operation where Renesas R-grade thermal margin is insufficient |
Compared with CY62167EV30LL-55ZSXI and IS61WV6416BLL-55NLI, the R1WV6416RSA-5SR#B0 offers unique BYTE#-enabled runtime mode switching and lowest standby current (8 µA) in its class, making it optimal for battery-sensitive commercial applications where TSOP (I) footprint and 0–70°C operation are sufficient.
Availability
R1WV6416RSA-5SR#B0 is available at Aetrix Electronics and suitable for industrial HMI, medical device parameter storage, automotive infotainment cache, and telecom base station control memory requiring stable component supply over extended production lifecycles.
Supply support for R1WV6416RSA-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The R1WV6416R Series was designed specifically for low-voltage, battery-operated memory applications demanding zero-refresh simplicity, compact packaging, and robust data retention - targeting portable instrumentation, medical monitors, and embedded control systems.
FAQ
What is the maximum operating frequency supported by the R1WV6416RSA-5SR#B0?
The R1WV6416RSA-5SR#B0 does not operate on a clock signal - it is an asynchronous SRAM. Its 55 ns access time corresponds to a maximum effective bus cycle rate of approximately 18.2 MHz under ideal conditions. System timing must comply with all AC parameters in the datasheet, including tRC (55 ns), tAA (55 ns), and tOE (25 ns), with proper setup/hold margins for address and control signals.
Does the R1WV6416RSA-5SR#B0 support true 8-bit operation?
Yes, the R1WV6416RSA-5SR#B0 supports true byte-mode operation using the BYTE# pin (available in its 48-pin TSOP (I) package). When BYTE# is low, the device operates as 8M × 8-bit with A–1 used as the LSB address, and LB#/UB# control individual byte lanes. This is confirmed in the Pin Description table (Page 3) and Operation Table (Page 5) of the REJ03C0368-0100 datasheet.
What is the minimum supply voltage at which the R1WV6416RSA-5SR#B0 retains data?
The R1WV6416RSA-5SR#B0 guarantees data retention down to 2.0 V (VDR) across its specified temperature range, as documented in the Low Vcc Data Retention Characteristics table (Page 15). At +70°C, retention current remains ≤100 µA, enabling reliable operation during brown-out events or battery discharge transitions without external backup circuitry.
Can the R1WV6416RSA-5SR#B0 be used in place of a DRAM in a microcontroller system?
Yes - the R1WV6416RSA-5SR#B0 replaces DRAM in systems requiring simplicity and determinism. Unlike DRAM, it needs no refresh controller, clock, or complex initialization. Its TTL-compatible interface and 16-bit bus allow direct connection to microcontrollers with parallel memory interfaces (e.g., ARM9, SH-4, or legacy 8051 derivatives), eliminating DRAM controller overhead and timing uncertainty.
Is the R1WV6416RSA-5SR#B0 RoHS compliant and lead-free?
Yes, the R1WV6416RSA-5SR#B0 is RoHS compliant and lead-free. Per Renesas documentation (REJ03C0368-0100, Colophon page), the device conforms to EU RoHS Directive requirements. The "#B0" suffix denotes lead-free, halogen-free packaging consistent with Renesas' environmental compliance program as of the 2009 datasheet revision.
R1WV6416RSA-5SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1WV6416RSA-5SR#B0 FAQ
1.How can I place an order for R1WV6416RSA-5SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RSA-5SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RSA-5SR#B0 reliable?
The price and inventory of R1WV6416RSA-5SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSA-5SR#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RSA-5SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSA-5SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RSA-5SR#B0?
R1WV6416RSA-5SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RSA-5SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RSA-5SR#B0?
For technical support, including R1WV6416RSA-5SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSA-5SR#B0 requirements.
6.How does Aetrix verify that R1WV6416RSA-5SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RSA-5SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSA-5SR#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RSA-5SR#B0?
All R1WV6416RSA-5SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSA-5SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RSA-5SR#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RSA-5SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RSA-5SR#B0 Tags
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