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Renesas R1WV6416RSA-7SI#B0
- Part No.:
- R1WV6416RSA-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1WV6416RSA-7SI#B0.pdf
- Description:
- STANDARD SRAM, 4MX16, 70NS
- Quantity:
- Payment:
- Shipping:
Inventory:430
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Product details
Overview
R1WV6416RSA-7SI#B0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4M word × 16-bit or 8M word × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 70ns access time and 8µA typical standby current at 3.0V. It supports battery-backed memory applications requiring no refresh, TTL-compatible I/O, and flexible byte/word addressing via LB#, UB#, and BYTE# control.
For engineers reviewing the R1WV6416RSA-7SI#B0 datasheet, R1WV6416RSA-7SI#B0 pinout, R1WV6416RSA-7SI#B0 application, or R1WV6416RSA-7SI#B0 equivalent, this device delivers deterministic timing, low-voltage data retention down to 2.0V, three-state OR-tie capable outputs, and dual chip select (CS1#, CS2) for seamless memory expansion in space-constrained embedded systems.
Technical Context
The R1WV6416RSA-7SI#B0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and sense/write amplifiers, enabling concurrent access to two 32Mb blocks. Its control logic supports three operational modes-word (16-bit), byte (8-bit), and byte-select (A−1 address)-via BYTE#, LB#, and UB# pins, with strict timing dependencies defined for CS1#/CS2-driven write cycles and OE#-gated read output enable.
It uses asynchronous interface timing with no internal clocks or refresh circuitry; all AC parameters-including tRC = 70ns, tAA = 70ns, tOE = 35ns, and tWP = 55ns-are specified across −40°C to +85°C (I-grade) under Vcc = 2.7–3.6V, with input thresholds VIH ≥ 2.4V and VIL ≤ 0.4V ensuring robust TTL-level interoperability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4,194,304 × 16 or 8,388,608 × 8) |
| Access Time | 70 ns - guarantees maximum read latency under worst-case voltage/temperature conditions |
| Supply Voltage | 2.7–3.6 V - enables direct integration with 3.3V logic and battery-backed systems |
| Standby Current | 8 µA typical at 3.0V/25°C - supports ultra-low-power retention during system sleep |
| Data Retention Vcc | 2.0 V minimum - maintains stored data without refresh when main supply drops |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade embedded deployment |
| I/O Compatibility | TTL - eliminates level-shifting requirements when interfacing with legacy microcontrollers |
Pinout & Package
Package: 48-pin TSOP (I), 12mm × 20mm, 0.5mm pitch, normal-bend leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs (word mode) | 22-bit address bus supporting 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common bus with three-state control; supports OR-tie for multi-device data buses |
| CS1#, CS2 | Chip select inputs | Active-low dual-select architecture enables hierarchical memory mapping and bank isolation |
| WE#, OE#, LB#, UB# | Control inputs | Asynchronous write enable, output enable, and byte-lane selection for precise 8/16-bit access |
| BYTE# | Mode configuration | Selects byte vs. word addressing; required for A−1 usage and supported only on TSOP/I and µTSOP/II packages |
| Vcc, Vss | Power and ground | Single-supply operation; decoupling required per JEDEC TSOP layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller overhead and timing constraints in real-time systems |
| Low-voltage data retention | Maintains valid data at Vcc ≥ 2.0V with ICCDR ≤ 160µA at +85°C, enabling seamless battery switchover |
| Byte/word mode flexibility | Configurable 8-bit or 16-bit data width via BYTE#, LB#, UB# - reduces bus width design trade-offs |
| OR-tie capable outputs | Three-state DQ drivers allow wired-OR connection of multiple devices on shared data bus without external logic |
| Multi-select expansion support | CS1# and CS2 enable daisy-chained or parallel memory banks with independent enable control |
Applications
| Industrial HMI Display Buffer | Medical Portable Data Logger |
|---|---|
Use Scenario: Stores frame buffers and GUI assets for monochrome or grayscale LCD panels in factory-floor HMIs with intermittent power. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing deterministic pixel-data fetch with zero wait states at 70ns access. Use Value: Enables flicker-free display updates during brownout events using 2.0V data retention and <8µA standby draw. | Use Scenario: Captures sensor waveforms (ECG, SpO₂) in battery-powered diagnostic tools with long idle periods. IC Role / Device Role / Timing Role: Non-volatile buffer holding pre-trigger and post-trigger samples before flash transfer. Use Value: Guarantees data integrity during battery replacement via low-Vcc retention and eliminates refresh-induced jitter in analog sampling windows. |
| Avionics Maintenance Terminal | Ruggedized Field Router Cache |
Use Scenario: Holds configuration tables and fault-history logs in aircraft line-replaceable units exposed to −40°C to +85°C thermal cycling. IC Role / Device Role / Timing Role: Industrial-grade SRAM delivering guaranteed 70ns read/write timing across full temperature range. Use Value: Meets DO-160E thermal and power-drop requirements without derating or thermal throttling. | Use Scenario: Accelerates packet buffering and routing table lookups in outdoor telecom edge routers powered by solar/battery hybrids. IC Role / Device Role / Timing Role: High-reliability parallel memory serving as L2 cache for MIPS-based network processors. Use Value: Reduces average packet latency by eliminating DRAM refresh stalls and supports hot-swap battery maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV6416BLL-7TI | 70ns access, same density and voltage, but 48-pin TSOPII package (10.79×10.49mm); no BYTE# pin | Lacks byte-mode configuration; requires fixed 16-bit bus width and different PCB footprint | Choose when board space is critical and byte-mode operation is unnecessary |
| AS6C6416-70BIN | 70ns access, 2.7–3.6V, but only rated for 0°C to +70°C (R-grade); higher ISB = 15µA typical | Not qualified for extended industrial temperature; less suitable for battery-retention-critical designs | Choose for cost-sensitive commercial applications where ambient temperature stays within 0–70°C |
Compared with IS61WV6416BLL-7TI and AS6C6416-70BIN, the R1WV6416RSA-7SI#B0 uniquely supports BYTE#-enabled byte/word mode switching in the standard 48-pin TSOP(I) footprint while maintaining −40°C to +85°C qualification and sub-10µA standby current - making it optimal for thermally demanding, battery-resilient embedded systems.
Availability
R1WV6416RSA-7SI#B0 is available at Aetrix Electronics and suitable for industrial HMI display buffers, medical portable data loggers, avionics maintenance terminals, and ruggedized field router caches requiring stable component supply across extended temperature ranges and low-power retention capability.
Supply support for R1WV6416RSA-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV6416R Series was designed specifically for low-voltage, battery-backed memory applications where simplicity, reliability, and zero-refresh operation are mandatory - targeting space-constrained embedded systems needing deterministic parallel SRAM performance.
FAQ
What is the maximum operating temperature range for the R1WV6416RSA-7SI#B0?
The R1WV6416RSA-7SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number. This specification is validated per the Recommended Operating Conditions table on page 6 of the REJ03C0368-0100 datasheet, with all AC and DC parameters guaranteed across this full range at Vcc = 2.7–3.6V.
Does the R1WV6416RSA-7SI#B0 require a refresh circuit?
No, the R1WV6416RSA-7SI#B0 is a static RAM and does not require any refresh circuitry. Its architecture uses flip-flop-based memory cells that retain data as long as power is applied, enabling truly asynchronous operation with no hidden timing overhead - a key advantage over DRAM in real-time embedded systems.
What package type is used by the R1WV6416RSA-7SI#B0?
The R1WV6416RSA-7SI#B0 uses a 48-pin thin small outline package (TSOP I), measuring 12mm × 20mm with 0.5mm lead pitch and normal-bend leads. This is confirmed in the Ordering Information table on page 1 and Pin Arrangement diagram on page 2 of the REJ03C0368-0100 datasheet.
Can the R1WV6416RSA-7SI#B0 operate at 2.5V supply voltage?
No - the R1WV6416RSA-7SI#B0 has a minimum specified supply voltage of 2.7V per the Recommended Operating Conditions table (page 6). Operation below 2.7V violates the absolute minimum Vcc rating and may result in undefined behavior, data corruption, or failure to meet timing specifications such as the guaranteed 70ns access time.
What is the function of the BYTE# pin on the R1WV6416RSA-7SI#B0?
The BYTE# pin on the R1WV6416RSA-7SI#B0 selects between word-mode (BYTE# = high/low) and byte-mode (BYTE# = low) operation, enabling use of the A−1 address line for 8-bit access. As stated on page 3, BYTE# is supported only on 48-pin TSOP(I) and 52-pin µTSOP(II) packages - and is present and functional on the R1WV6416RSA-7SI#B0.
R1WV6416RSA-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1WV6416R
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Single Port, Asynchronous
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16, 8M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
R1WV6416RSA-7SI#B0 FAQ
1.How can I place an order for R1WV6416RSA-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RSA-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RSA-7SI#B0 reliable?
The price and inventory of R1WV6416RSA-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSA-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RSA-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSA-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RSA-7SI#B0?
R1WV6416RSA-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RSA-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RSA-7SI#B0?
For technical support, including R1WV6416RSA-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSA-7SI#B0 requirements.
6.How does Aetrix verify that R1WV6416RSA-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RSA-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSA-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RSA-7SI#B0?
All R1WV6416RSA-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSA-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RSA-7SI#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RSA-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RSA-7SI#B0 Tags
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