My Inquiry
My Account
Renesas R1WV6416RSD-5SI#B0
- Part No.:
- R1WV6416RSD-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1WV6416RSD-5SI#B0.pdf
- Description:
- IC SRAM 64MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,424
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1WV6416RSD-5SI#B0 from Renesas Electronics is a 64Mb low-power static RAM (4M word × 16-bit or 8M word × 8-bit), fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 55 ns access time and −40°C to +85°C industrial temperature range. It supports byte/word mode operation via BYTE#, LB#, and UB# controls and is designed for battery-backed memory systems requiring zero-refresh, TTL-compatible interfacing, and ultra-low standby current (8 µA typical at 3.0V).
For engineers reviewing the R1WV6416RSD-5SI#B0 datasheet, R1WV6416RSD-5SI#B0 pinout, R1WV6416RSD-5SI#B0 application, or R1WV6416RSD-5SI#B0 equivalent, this device serves as a drop-in replacement for legacy LPSRAMs in portable instrumentation, industrial PLCs, and embedded controllers where data retention at reduced VCC (down to 2.0V) and OR-tie bus capability are critical.
Technical Context
The R1WV6416RSD-5SI#B0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and shared address/control logic, enabling simultaneous 8-bit or 16-bit data access without clocking or refresh circuitry. Its BYTE# pin enables dynamic switching between word and byte addressing modes, while CS1#, CS2, LB#, and UB# provide flexible chip select and byte enable control for memory expansion.
It features TTL-compatible input thresholds (VIH = 2.4V, VIL = 0.4V), three-state outputs with OR-tie capability, and low-impedance output drivers (VOL = 0.4V at 2mA, VOH = 2.4V at −0.5mA). Standby current is minimized through dual control paths: CS2-driven or CS1#/LB#/UB#-driven data retention modes, with ICCDR ≤ 160 µA at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4,194,304 × 16-bit or 8,388,608 × 8-bit) |
| Access Time | 55 ns - guarantees full read/write cycle completion within 55 ns at VCC = 2.7–3.6V and TA = −40°C to +85°C |
| Supply Voltage | 2.7–3.6 V - single-rail operation compatible with 3.3V logic systems and battery-backed designs |
| Standby Current | 8 µA typical at 3.0V/25°C - enables multi-year battery life in always-on backup memory applications |
| Operating Temperature | −40°C to +85°C - qualified for industrial environments without derating |
| Data Retention VCC | 2.0 V minimum - retains stored data during brown-out or battery-sag conditions |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - compact footprint for space-constrained PCB layouts |
Pinout & Package
Package: 52-pin plastic micro Thin Small Outline Package (µTSOP II), normal-bend type (52PTG), 10.79 mm × 10.49 mm body, 0.4 mm pin pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs (word mode) | 22-bit address bus supporting 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common data bus with three-state outputs; supports OR-tie for bus sharing |
| CS1#, CS2 | Chip select inputs | Two-level hierarchical chip enable: CS1# active-low primary select; CS2 active-high secondary control for retention mode |
| WE#, OE#, LB#, UB# | Control inputs | Write enable (active-low), output enable (active-low), lower/upper byte enables (active-low) - enable partial-word writes and reads |
| BYTE# | Mode control input | Selects byte (BYTE# = L) or word (BYTE# = H) addressing; supported only in TSOP and µTSOP packages |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; decoupling required per JEDEC standards for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates external timing circuitry and reduces system power - ideal for battery-operated devices |
| Ultra-low standby current | 8 µA typical at 3.0V/25°C enables >10-year coin-cell backup in memory-retention mode |
| Byte/word mode flexibility | BYTE# pin allows runtime reconfiguration between 8-bit and 16-bit data interfaces without hardware change |
| TTL-compatible I/O | Direct interface with 3.3V microcontrollers and FPGAs without level-shifting components |
| OR-tie capable outputs | Enables multiple R1WV6416RSD-5SI#B0 devices to share a common data bus without external logic |
Applications
| Portable Medical Instrumentation | Industrial Programmable Logic Controllers |
|---|---|
Use Scenario: Battery-powered handheld ECG monitor storing waveform buffers and calibration data during power loss. IC Role / Device Role / Timing Role: Non-volatile memory buffer with data retention down to 2.0V and <160 µA standby draw at +85°C. Use Value: Enables >5-year battery life with guaranteed data integrity during brown-out events without supercapacitor or backup battery circuitry. |
Use Scenario: Real-time I/O mapping and program storage in DIN-rail mounted PLCs exposed to wide ambient temperatures. IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution with 55 ns access time and −40°C to +85°C operation. Use Value: Eliminates DRAM refresh overhead and supports deterministic timing in hard real-time control loops. |
| Automotive Infotainment Head Units | Test & Measurement Equipment |
Use Scenario: Storing user presets, firmware patches, and audio codec buffers in head units with 12V-to-3.3V DC/DC conversion. IC Role / Device Role / Timing Role: Low-noise, high-reliability SRAM interfaced directly to ARM-based SoC via 16-bit parallel bus. Use Value: Reduces BOM count by removing level shifters and simplifies layout with TTL-compatible signaling and 0.4 mm pitch µTSOP package. |
Use Scenario: High-speed acquisition buffer in portable oscilloscopes capturing transient signals before host transfer. IC Role / Device Role / Timing Role: Burst-mode memory with 55 ns random access and OR-tie capability for multi-channel data merging. Use Value: Supports 20+ MS/s sampling rates using parallel bus architecture without FPGA-based memory controller complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXI | 512K × 32-bit organization (16Mb), 55 ns access, 2.2–3.6V supply, 48-pin TSOP | Lower density, wider data bus - suited for 32-bit MCU interfaces but requires two devices for 64Mb capacity | Select when 32-bit native bus width and tighter voltage tolerance (2.2V min) are prioritized over density and package size |
| IS61WV6416BLL-55MLI | Same 4M × 16-bit density and 55 ns speed, but 48-pin TSOP-I package and 2.5–3.6V supply | Lacks BYTE# pin and µTSOP-II footprint - limits byte-mode flexibility and board area optimization | Choose for cost-sensitive designs where 48-pin TSOP compatibility and established supply chain outweigh µTSOP-II miniaturization benefits |
Compared with CY62167EV30LL-55ZSXI and IS61WV6416BLL-55MLI, the R1WV6416RSD-5SI#B0 uniquely delivers 64Mb in a 52-pin µTSOP-II package with BYTE#-enabled byte/word mode switching and 2.0V data retention - making it optimal for space-constrained, battery-backed industrial and medical systems requiring maximum functional integration per mm².
Availability
R1WV6416RSD-5SI#B0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial programmable logic controllers, and automotive infotainment head units requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for R1WV6416RSD-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1WV6416R Series was developed specifically for low-power, battery-backed memory applications demanding zero-refresh operation, wide temperature tolerance, and compact packaging - targeting portable instrumentation, industrial control, and communications equipment.
FAQ
What is the maximum operating temperature range for the R1WV6416RSD-5SI#B0?
The R1WV6416RSD-5SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as confirmed by its "I" suffix and the Recommended Operating Conditions table on page 6 of REJ03C0368-0100. This rating applies across the full 2.7–3.6V supply range and is validated for both active and standby modes, including data retention at reduced VCC.
Does the R1WV6416RSD-5SI#B0 support byte-mode addressing?
Yes, the R1WV6416RSD-5SI#B0 supports byte-mode addressing via the BYTE# pin, which is explicitly enabled for the 52-pin µTSOP (II) package per Pin Description (page 3) and Operation Table (page 5). When BYTE# = L, the device operates in 8M-word × 8-bit mode using A−1 as an address bit, and LB#/UB# control individual byte lanes.
What is the minimum supply voltage required to retain data in the R1WV6416RSD-5SI#B0?
The R1WV6416RSD-5SI#B0 maintains data integrity down to 2.0V VCC, as specified in the Low Vcc Data Retention Characteristics table (page 15). At this voltage, data retention current is ≤160 µA at +85°C, and the chip select to data retention time (tCDR) is 0 ns - enabling immediate entry into low-power retention upon voltage sag.
Is the R1WV6416RSD-5SI#B0 pin-compatible with other members of the R1WV6416R family?
The R1WV6416RSD-5SI#B0 shares identical pinout and functionality with other 52-pin µTSOP (II) variants (e.g., R1WV6416RSD-7S%), differing only in access time (55 ns vs. 70 ns) and temperature grade. Pin compatibility is confirmed by the unified Pin Arrangement diagram on page 2 and consistent Pin Description across all variants in the datasheet.
What package type does the R1WV6416RSD-5SI#B0 use, and what are its dimensions?
The R1WV6416RSD-5SI#B0 uses a 52-pin micro Thin Small Outline Package (µTSOP II), designated as "52PTG" in the Ordering Information table (page 1). Its body dimensions are 10.79 mm × 10.49 mm with 0.4 mm pin pitch, and it features normal-bend leads - verified in the mechanical drawings and package description on page 1.
R1WV6416RSD-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8, 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1WV6416RSD-5SI#B0 FAQ
1.How can I place an order for R1WV6416RSD-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RSD-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RSD-5SI#B0 reliable?
The price and inventory of R1WV6416RSD-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSD-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RSD-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSD-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RSD-5SI#B0?
R1WV6416RSD-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RSD-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RSD-5SI#B0?
For technical support, including R1WV6416RSD-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSD-5SI#B0 requirements.
6.How does Aetrix verify that R1WV6416RSD-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RSD-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSD-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RSD-5SI#B0?
All R1WV6416RSD-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSD-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RSD-5SI#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RSD-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RSD-5SI#B0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
