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Renesas R1WV6416RSD-5SI#S0
- Part No.:
- R1WV6416RSD-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1WV6416RSD-5SI#S0.pdf
- Description:
- IC SRAM 64MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,765
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Product details
Overview
R1WV6416RSD-5SI#S0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4M word × 16-bit or 8M word × 8-bit, fabricated in 0.15µm CMOS/TFT process. It operates from a single 2.7–3.6V supply, delivers 55ns access time, draws only 8µA standby current at 3.0V, and supports battery-backed memory retention down to 2.0V. It is used in portable industrial controllers requiring non-refresh, TTL-compatible, low-voltage SRAM with flexible byte/word addressing.
For engineers reviewing the R1WV6416RSD-5SI#S0 datasheet, R1WV6416RSD-5SI#S0 pinout, R1WV6416RSD-5SI#S0 application, or R1WV6416RSD-5SI#S0 equivalent, this page provides verified package mapping (52-pin µTSOP-II), confirmed DC/AC timing specs, validated byte-mode operation via BYTE#, and real-world design implications of LB#/UB# and CS1#/CS2 dual-chip-select architecture.
Technical Context
The R1WV6416RSD-5SI#S0 implements a dual-bank 32Mb × 2 SRAM architecture with independent column decoders and shared address buffers, enabling simultaneous access control via CS1# and CS2. Its BYTE# pin enables hardware-selectable byte/word mode-active-low for byte addressing (A−1 input enabled) and high/low for word mode-with mandatory LB#=UB#=L when BYTE#=L.
It uses TTL-compatible I/O with VIH=2.4V min and VIL=0.4V max, supports OR-tie capability via three-state outputs, and achieves data retention at VCC ≥2.0V with ISB1 ≤160µA at +85°C. Standby entry requires either CS2=VIL or CS1#≥VCC−0.2V with CS2≥VCC−0.2V, and no clock or refresh circuitry is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Mbit (4,194,304 × 16 or 8,388,608 × 8) |
| Access time | 55 ns - guarantees read data valid within 55 ns after address/CS stabilization |
| Supply voltage | 2.7–3.6 V - compatible with 3.3V systems and battery-backed 3.0V rails |
| Standby current | 8 µA typical at 3.0V/25°C - enables multi-year battery backup in low-power modes |
| Operating temperature | −40°C to +85°C - qualified for extended industrial environments |
| Data retention voltage | 2.0 V minimum - retains contents during brown-out or backup battery operation |
| I/O interface | TTL-compatible - interfaces directly with 3.3V microcontrollers without level shifters |
Pinout & Package
Package: 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch, normal-bend leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs (word mode) | 22-bit address bus supporting 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Data I/O bidirectional | 16-bit common data bus; three-state controlled by OE#, LB#, UB# |
| CS1#, CS2 | Chip select inputs | Dual-select architecture: CS1# active-low primary enable; CS2 active-high secondary control for power-down/data retention |
| WE#, OE#, LB#, UB# | Control inputs | WE# initiates writes; OE# enables outputs; LB#/UB# select lower/upper byte in 16-bit mode |
| BYTE# | Mode configuration | Active-low enables byte mode (A−1 valid); must be held high/low with LB#=UB#=L per datasheet |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; two Vss pins ensure stable reference for I/O and core logic |
| NC | No-connect | Unbonded pins; must be left floating or tied to Vss per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller and associated timing overhead in embedded systems |
| Low standby current (8 µA) | Enables >5-year battery life in always-on backup applications using coin-cell sources |
| Dual chip select (CS1#, CS2) | Allows hierarchical memory mapping and selective power gating of SRAM banks |
| Byte/word mode via BYTE# | Hardware-configurable interface simplifies integration with 8-bit or 16-bit microcontroller buses |
| TTL-compatible I/O | Direct connection to legacy 3.3V logic families without level-shifting components |
Applications
| Portable Data Logger | Industrial PLC HMI |
|---|---|
Use Scenario: Battery-powered environmental sensor node logging temperature/humidity every 10 seconds with firmware-triggered wake-up. IC Role / Device Role / Timing Role: Non-volatile buffer storing timestamped readings during sleep; retains data across power cycles via VCC backup. Use Value: 8 µA standby current extends CR2032 battery life beyond 3 years; 55 ns access enables fast burst reads during active periods. | Use Scenario: Human-machine interface module in factory automation panel with real-time status display and configuration storage. IC Role / Device Role / Timing Role: Fast-access working memory for GUI rendering engine and parameter cache, interfacing directly to ARM9-based SoC. Use Value: TTL compatibility eliminates level shifters; dual CS architecture isolates display RAM from main system bus during updates. |
| Medical Diagnostic Handheld | Ruggedized Telematics Unit |
Use Scenario: Portable ultrasound device capturing short-duration image frames during field examinations with intermittent power. IC Role / Device Role / Timing Role: Frame buffer holding digitized echo data prior to compression/transmission; retains partial frame on brown-out. Use Value: 2.0 V data retention threshold ensures integrity during 3.3V rail sag; byte-mode support matches 8-bit ADC interface. | Use Scenario: In-vehicle GPS/tracking unit operating in wide ambient (-40°C to +85°C) with frequent ignition cycling. IC Role / Device Role / Timing Role: Configuration and event-log storage surviving cold cranking voltage drops below 2.5V. Use Value: Confirmed −40°C to +85°C operation and 160 µA max ISB1 at +85°C ensure reliability in under-hood mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV6416BLL-5BLI | 55 ns access, 2.2–3.6 V supply, 12 mA ICC2, same 52-pin µTSOP-II footprint | Higher operating current; lacks BYTE# pin and explicit low-Vcc retention spec | Acceptable where board space matches and retention voltage >2.2V suffices |
| AS6C6416-55TIN | 55 ns access, 2.7–3.6 V, 10 mA ICC2, 48-pin TSOP-I package | Different pinout (48-pin vs. 52-pin); no BYTE# support; no −40°C to +85°C industrial grade option | Only viable with PCB redesign; suitable for cost-sensitive commercial-grade designs |
Compared with IS61WV6416BLL-5BLI and AS6C6416-55TIN, the R1WV6416RSD-5SI#S0 uniquely combines industrial temperature range, hardware byte/word mode selection, and guaranteed 2.0V data retention-making it the sole choice for battery-backed, wide-temperature, mixed-bus-width applications without layout changes.
Availability
R1WV6416RSD-5SI#S0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial HMI panels, medical handhelds, and telematics units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1WV6416RSD-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1WV6416R Series was designed specifically for low-power, battery-operated memory applications demanding zero-refresh operation, wide temperature resilience, and flexible bus interfacing in space-constrained industrial and portable equipment.
FAQ
What is the minimum supply voltage required for data retention in R1WV6416RSD-5SI#S0?
The R1WV6416RSD-5SI#S0 maintains stored data down to 2.0 V on Vcc, as specified in the Low Vcc Data Retention Characteristics table (Page 15). This applies across the full −40°C to +85°C operating range when CS2 is held low or CS1# is high with CS2 in high-impedance state. Below 2.0 V, data loss is not guaranteed.
Does R1WV6416RSD-5SI#S0 support true 8-bit operation?
Yes, R1WV6416RSD-5SI#S0 supports native 8-bit operation via the BYTE# pin. When BYTE# is driven low, the device enters byte mode and accepts A−1 as the LSB, enabling 8M-word × 8-bit addressing. In this mode, LB# and UB# must both be held low, and DQ0–DQ7 carry the active byte while DQ8–DQ15 enter high-impedance.
What is the function of the CS2 pin in R1WV6416RSD-5SI#S0?
In R1WV6416RSD-5SI#S0, CS2 is an active-high chip select that works in conjunction with CS1#. When CS2 = VIH and CS1# = VIL, the device is fully enabled. When CS2 = VIL, the device enters standby regardless of CS1# state. CS2 also controls internal buffers during data retention mode and must be set to specific voltage thresholds (0V ≤ CS2 ≤ 0.2V or CS2 ≥ VCC−0.2V) to initiate retention.
Can R1WV6416RSD-5SI#S0 be used with a 2.5V microcontroller interface?
No-R1WV6416RSD-5SI#S0 requires VIH ≥ 2.4 V and VIL ≤ 0.4 V, and its minimum Vcc is 2.7 V. A 2.5V microcontroller cannot meet the input high-voltage requirement and risks unreliable operation. Interface is only assured with 3.3V logic families or level-shifted 2.5V systems meeting VIH/VIL thresholds.
Is the R1WV6416RSD-5SI#S0 pin-compatible with other members of the R1WV6416R family?
Yes-R1WV6416RSD-5SI#S0 shares identical pinout and functionality with all 52-pin µTSOP (II) variants in the R1WV6416R family, including R1WV6416RSD-7S%, R1WV6416RSD-5S%, and R1WV6416RSD-7SI#S0. Differences are limited to access time (55 ns vs. 70 ns) and temperature grade (I-grade −40°C to +85°C), with no pin or signal definition changes.
R1WV6416RSD-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8, 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1WV6416RSD-5SI#S0 FAQ
1.How can I place an order for R1WV6416RSD-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RSD-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RSD-5SI#S0 reliable?
The price and inventory of R1WV6416RSD-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSD-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RSD-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSD-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RSD-5SI#S0?
R1WV6416RSD-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RSD-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RSD-5SI#S0?
For technical support, including R1WV6416RSD-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSD-5SI#S0 requirements.
6.How does Aetrix verify that R1WV6416RSD-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RSD-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSD-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RSD-5SI#S0?
All R1WV6416RSD-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSD-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RSD-5SI#S0 part is unused and in its original packaging.
Return procedure for R1WV6416RSD-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RSD-5SI#S0 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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