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Renesas R1WV6416RSD-7SR#B0
- Part No.:
- R1WV6416RSD-7SR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1WV6416RSD-7SR#B0.pdf
- Description:
- STANDARD SRAM, 4MX16, 70NS
- Quantity:
- Payment:
- Shipping:
Inventory:200
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Product details
Overview
R1WV6416RSD-7SR#B0 from Renesas Electronics is a 64Mb low-power static RAM organized as 4,194,304 × 16-bit or 8,388,608 × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from a single 2.7–3.6V supply with 70ns access time and 8µA typical standby current at 3.0V. It serves as main memory or buffer in battery-backed industrial controllers requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1WV6416RSD-7SR#B0 datasheet, R1WV6416RSD-7SR#B0 pinout, R1WV6416RSD-7SR#B0 application, or R1WV6416RSD-7SR#B0 equivalent, this page delivers verified package mapping (52-pin µTSOP II), byte/word mode control logic, low-voltage data retention down to 2.0V, OR-tie capable three-state I/O, and chip select expansion support via CS1#/CS2/LB#/UB#.
Technical Context
The R1WV6416RSD-7SR#B0 implements dual-bank 32Mb SRAM architecture with independent column decoders and shared address buffers, enabling simultaneous word (16-bit) and byte (8-bit) addressing modes controlled by BYTE#, LB#, and UB#. Its no-clock, no-refresh design eliminates timing-critical refresh cycles while supporting battery backup via low-voltage data retention mode at VCC ≥ 2.0V.
It uses TTL-compatible input thresholds (VIH = 2.4V, VIL = 0.4V), supports OR-tie bus sharing through three-state outputs with OE#-controlled contention prevention, and allows memory expansion via active-low chip selects CS1# and CS2 plus byte enable signals LB# and UB# - all validated for 52-pin µTSOP (II) mechanical and electrical compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 64 Mbit (4M × 16-bit or 8M × 8-bit) - supports flexible data bus width selection without external multiplexing |
| Access Time | 70 ns - guarantees deterministic read latency for real-time control loops and display buffering |
| Supply Voltage | 2.7–3.6 V - compatible with 3.3V systems and enables direct integration with Li-ion battery backup rails |
| Standby Current | 8 µA typical at 3.0V - enables multi-year battery life in always-on monitoring devices |
| Data Retention Voltage | 2.0 V minimum - maintains stored data during brown-out or battery switchover without external supervision |
| Operating Temperature | 0°C to +70°C (R-grade) - qualified for commercial and industrial ambient environments |
| Package | 52-pin µTSOP (II), 10.79mm × 10.49mm, 0.4mm pitch - surface-mount compatible with high-density PCB layouts |
Pinout & Package
Package: 52-pin plastic micro Thin Small Outline Package (µTSOP II), normal-bend type, 10.79mm × 10.49mm body, 0.4mm pin pitch, JEDEC MO-218AC compliant.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Input | 22-bit address bus supporting full 4M-word addressing in 16-bit mode; A−1 used only in byte mode |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional common data bus with three-state output control via OE#, LB#, UB# |
| CS1#, CS2 | Chip Select | Two-level hierarchical chip enable: CS1# primary, CS2 secondary - enables daisy-chained or banked memory expansion |
| WE#, OE#, LB#, UB# | Control Inputs | Asynchronous write enable, output enable, and byte-lane controls - allow partial-word writes without masking logic |
| BYTE# | Mode Select | Configures device between 16-bit word mode (BYTE# = H) and 8-bit byte mode (BYTE# = L); supported only on TSOP/I and µTSOP/II packages |
| Vcc, Vss | Power/Ground | Single 2.7–3.6V supply with dedicated ground pins - minimizes noise coupling in mixed-signal systems |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level refresh overhead and timing constraints - ideal for simple microcontroller interfaces |
| TTL-compatible I/O | Direct connection to legacy 3.3V logic families without level-shifting circuitry |
| OR-tie capability | Three-state outputs enable wired-OR bus architectures for shared memory or peripheral data paths |
| Low-voltage data retention | Maintains valid data at VCC ≥ 2.0V - supports seamless transition to battery backup without data loss |
| Byte/word mode flexibility | Runtime-selectable 8-bit or 16-bit data width via BYTE# pin - reduces BOM count across product variants |
Applications
| Industrial PLC Memory Buffer | Medical Device Data Logger |
|---|---|
Use Scenario: Stores real-time sensor readings and control state history in programmable logic controllers with limited power budget. IC Role / Device Role / Timing Role: Non-volatile buffer memory providing deterministic 70ns read/write access without refresh cycles. Use Value: Enables uninterrupted logging during mains failure via 2.0V data retention and 8µA standby draw. |
Use Scenario: Captures ECG waveforms and diagnostic parameters in portable patient monitors with battery backup. IC Role / Device Role / Timing Role: High-reliability SRAM acting as front-end acquisition buffer before flash storage transfer. Use Value: TTL compatibility simplifies interface to analog front-end ASICs; µTSOP package fits compact handheld form factors. |
| Automotive Infotainment Display Cache | Test & Measurement Equipment FIFO |
Use Scenario: Caches GUI assets and frame buffers in automotive head units where thermal and space constraints limit cooling options. IC Role / Device Role / Timing Role: Low-power 16-bit memory supporting burst transfers from graphics controller to display driver. Use Value: 70ns access time meets display pipeline timing; 0–70°C rating matches automotive cabin temperature range. |
Use Scenario: Implements high-speed acquisition FIFO in oscilloscopes and logic analyzers requiring glitch-free data capture. IC Role / Device Role / Timing Role: Asynchronous SRAM serving as first-stage buffer between ADC and processing engine. Use Value: No-refresh operation prevents data corruption during variable sample rates; OR-tie outputs simplify multi-channel bus sharing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV6416BLL-7BLI | Same density and organization; 70ns access, but 3.0–3.6V only (no 2.7V support); 48-pin TSOP I package | Lacks 2.7V operation and µTSOP II footprint - unsuitable for battery-backed or space-constrained designs | Select if existing board uses 48-pin TSOP I and system operates strictly above 3.0V |
| AS6C6416-70BIN | 64Mb ×16, 70ns, 2.7–3.6V, but 48-pin TSOP I; higher ISB (15µA typ) and no BYTE# pin | No byte-mode support limits flexibility; larger standby current reduces battery life in always-on use cases | Choose when cost is prioritized over power efficiency and byte/word mode switching is unnecessary |
Compared with IS61WV6416BLL-7BLI and AS6C6416-70BIN, the R1WV6416RSD-7SR#B0 uniquely combines 2.7V operation, 8µA standby, BYTE#-enabled mode switching, and 52-pin µTSOP II packaging - making it optimal for compact, battery-resilient embedded systems requiring architectural flexibility.
Availability
R1WV6416RSD-7SR#B0 is available at Aetrix Electronics and suitable for industrial PLCs, portable medical devices, automotive infotainment displays, and test equipment requiring stable component supply across extended product lifecycles.
Supply support for R1WV6416RSD-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The R1WV6416R Series was designed specifically for low-power, battery-backed memory applications demanding zero-refresh operation, wide voltage tolerance, and flexible byte/word interfacing - targeting industrial control, portable instrumentation, and automotive subsystems.
FAQ
What is the operating voltage range of the R1WV6416RSD-7SR#B0?
The R1WV6416RSD-7SR#B0 operates from 2.7V to 3.6V DC, with guaranteed functionality across this full range. Its data retention capability extends down to 2.0V, allowing continued data hold during brown-out conditions. This makes the R1WV6416RSD-7SR#B0 especially suitable for systems powered by single-cell Li-ion batteries or regulated 3.3V rails with backup capacitors.
Does the R1WV6416RSD-7SR#B0 support both 8-bit and 16-bit data bus configurations?
Yes, the R1WV6416RSD-7SR#B0 supports runtime-selectable 8-bit and 16-bit modes via the BYTE# pin. When BYTE# is high, it operates in 16-bit word mode (4M × 16); when low, it switches to 8-bit byte mode (8M × 8), using A−1 as the LSB. This feature is confirmed for the 52-pin µTSOP (II) package used by the R1WV6416RSD-7SR#B0.
What is the standby current specification for the R1WV6416RSD-7SR#B0?
The R1WV6416RSD-7SR#B0 draws 8 µA typical standby current at 3.0V and +25°C, with a maximum of 24 µA at +40°C and 100 µA at +70°C. These values are measured under defined data retention conditions (CS2 = VIL or equivalent), confirming its suitability for long-duration battery-powered applications where ultra-low quiescent power is critical.
Is the R1WV6416RSD-7SR#B0 pin-compatible with other members of the R1WV6416R family?
The R1WV6416RSD-7SR#B0 uses the 52-pin µTSOP (II) package and shares identical pinout and signal definitions with other R1WV6416RSD-xS% variants (e.g., R1WV6416RSD-5S%). However, it is not pin-compatible with TSOP (I) or f-BGA variants due to differing pin counts, spacing, and physical layout - cross-package substitution requires PCB redesign.
How does the R1WV6416RSD-7SR#B0 handle memory expansion across multiple devices?
The R1WV6416RSD-7SR#B0 supports hierarchical memory expansion using CS1# (primary chip select) and CS2 (secondary chip select), along with LB# and UB# for byte-lane control. This allows stacking multiple devices on a shared data bus without external decoding logic. The R1WV6416RSD-7SR#B0's OR-tie capable outputs further simplify bus arbitration in multi-SRAM configurations.
R1WV6416RSD-7SR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1WV6416RSD-7SR#B0 FAQ
1.How can I place an order for R1WV6416RSD-7SR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1WV6416RSD-7SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1WV6416RSD-7SR#B0 reliable?
The price and inventory of R1WV6416RSD-7SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1WV6416RSD-7SR#B0 is usually 5 days.
3.What payment methods are accepted for R1WV6416RSD-7SR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1WV6416RSD-7SR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1WV6416RSD-7SR#B0?
R1WV6416RSD-7SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1WV6416RSD-7SR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1WV6416RSD-7SR#B0?
For technical support, including R1WV6416RSD-7SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1WV6416RSD-7SR#B0 requirements.
6.How does Aetrix verify that R1WV6416RSD-7SR#B0 is sourced from the original manufacturer or authorized distributors?
All R1WV6416RSD-7SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1WV6416RSD-7SR#B0 meets industry standards.
7.What is the process for return or replacement of R1WV6416RSD-7SR#B0?
All R1WV6416RSD-7SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1WV6416RSD-7SR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1WV6416RSD-7SR#B0 part is unused and in its original packaging.
Return procedure for R1WV6416RSD-7SR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1WV6416RSD-7SR#B0 Tags
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