Renesas R7FA2E2A53CNJ#BA1

Overview

R7FA2E2A53CNJ#BA1 from Renesas Electronics is an ultra-low-power 32-bit Arm® Cortex®-M23 microcontroller operating at up to 48 MHz, featuring 32-KB code flash memory, 8-KB SRAM with parity, a 12-bit ADC (8-channel), a 12-bit DAC, and integrated CAN, I3C, SPI, and SCI interfaces. It targets battery-powered industrial sensors and smart metering endpoints requiring functional safety and security in -40°C to +105°C environments.

For engineers reviewing the R7FA2E2A53CNJ#BA1 datasheet, R7FA2E2A53CNJ#BA1 pinout, R7FA2E2A53CNJ#BA1 application, or R7FA2E2A53CNJ#BA1 equivalent, key selection criteria include its 20-pin HWQFN package, 32-KB flash/8-KB SRAM memory configuration, dual watchdog timers (WDT/IWDT), ECC-enabled SRAM, and hardware AES-128/256 encryption for secure firmware updates and data handling.

Technical Context

The R7FA2E2A53CNJ#BA1 implements the Armv8-M architecture with Memory Protection Unit (MPU) supporting 8 regions, enabling robust partitioning of trusted and untrusted code. Its system-level safety features include SRAM parity error detection, flash area protection, ADC self-diagnosis, and Clock Frequency Accuracy Measurement Circuit (CAC) for real-time clock validation.

Power management integrates Event Link Controller (ELC) and Data Transfer Controller (DTC) to enable peripheral-to-peripheral event chaining and DMA transfers without CPU intervention-critical for deterministic low-power operation. The MCU supports three independent clock sources (HOCO/MOCO/LOCO) with trim capability and includes dedicated IWDT with 15-kHz oscillator for fail-safe reset under software lockup.

Key Specifications

Pinout & Package

Package: 20-pin HWQFN (4 mm × 4 mm, 0.5 mm pitch), exposed die pad recommended to be connected to VSS or left open.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar microcontroller applications.

Compared with R7FA2E2A52DNJ#BA1, the R7FA2E2A53CNJ#BA1 adds extended temperature support and safety features like CAC and ADC self-test; compared with R7FA2E2A54CNJ#BA1, it trades 32-KB less flash for lower unit cost while retaining identical peripheral count and thermal robustness.

Availability

R7FA2E2A53CNJ#BA1 is available at Aetrix Electronics and suitable for industrial sensor nodes, smart energy meters, and motor control edge devices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for R7FA2E2A53CNJ#BA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and IoT markets.

The RA2E2 Group is designed for ultra-low-power, cost-sensitive embedded applications demanding functional safety and security - targeting battery-operated sensors, smart meters, and industrial HMI devices with minimal bill-of-materials.

FAQ

What is the maximum operating frequency of the R7FA2E2A53CNJ#BA1?

The R7FA2E2A53CNJ#BA1 operates at a maximum frequency of 48 MHz using its Arm Cortex-M23 core. This speed is achievable across the full -40°C to +105°C temperature range when powered within the specified 1.6–5.5 V supply window. The high-speed on-chip oscillator (HOCO) provides this clock source with factory-trimmed accuracy, eliminating need for external crystals in many applications. The R7FA2E2A53CNJ#BA1 also supports lower-frequency internal oscillators (MOCO at 8 MHz, LOCO at 32.768 kHz) for ultra-low-power sleep modes.

Does the R7FA2E2A53CNJ#BA1 support CAN communication?

Yes, the R7FA2E2A53CNJ#BA1 integrates a full CAN 2.0B module compliant with ISO 11898-1, supporting bit rates up to 1 Mbps and message filtering with acceptance masks. It includes dedicated transmit/receive buffers and automatic retransmission on error, making it suitable for industrial fieldbus and automotive subsystem communication. The CAN peripheral operates independently of the CPU via the Event Link Controller (ELC), allowing low-latency response to bus events without software overhead. This functionality is confirmed in the R01DS0387EJ0150 datasheet section 1.7 and Table 1.7.

What safety and security features does the R7FA2E2A53CNJ#BA1 include?

The R7FA2E2A53CNJ#BA1 includes SRAM parity error detection, flash area protection, ADC self-diagnosis, Clock Frequency Accuracy Measurement Circuit (CAC), Cyclic Redundancy Check (CRC) calculator, Data Operation Circuit (DOC), AES-128/256 encryption engine, and True Random Number Generator (TRNG). These features collectively support compliance with IEC 61508 SIL-2 and ISO/SAE 21434 cybersecurity requirements. The MPU with 8 regions enforces memory access isolation, while independent watchdog timers (WDT and IWDT) provide layered fault recovery. All safety mechanisms are hardware-implemented and documented in the R01DS0387EJ0150 Rev.1.50 datasheet.

What is the pin count and package type of the R7FA2E2A53CNJ#BA1?

The R7FA2E2A53CNJ#BA1 uses a 20-pin HWQFN package measuring 4 mm × 4 mm with 0.5 mm pitch and an exposed die pad. This package is explicitly identified by the "NJ" suffix in the part number per Renesas' RA2E2 part numbering scheme (Figure 1.2). The exposed pad should be connected to VSS or left floating per layout guidelines. Pin assignments are detailed in Figure 1.4 and Table 1.14 of the R01DS0387EJ0150 datasheet, confirming 15 GPIOs, 2 dedicated analog inputs (AN009, AN019), and 2 5-V-tolerant pins (P400, P401).

How much flash and SRAM memory does the R7FA2E2A53CNJ#BA1 have?

The R7FA2E2A53CNJ#BA1 contains 32-KB of code flash memory and 8-KB of on-chip SRAM with parity protection. It also includes 2-KB of data flash memory rated for 100,000 program/erase cycles, intended for parameter storage and firmware update staging. The memory map is fixed and verified in Table 1.2 and Section 1.4 of the R01DS0387EJ0150 datasheet. Unlike higher-density variants (e.g., R7FA2E2A54CNJ#BA1 with 64-KB flash), this configuration balances cost and capacity for mid-tier embedded applications.