Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RD130E-T1

Part No.:
RD130E-T1
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixRD130E-T1.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:32,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RD130E-T1 from NEC Corporation is a silicon planar epitaxial Schottky barrier diode rated for 30 V reverse voltage, 1 A average forward current, and 0.55 V typical forward voltage at 1 A, used in low-voltage DC/DC converter output rectification and high-frequency switching power supplies.

For engineers reviewing the RD130E-T1 datasheet, RD130E-T1 pinout, RD130E-T1 application, or RD130E-T1 equivalent, key selection criteria include VF consistency at 1 A, low trr (<5 ns), thermal resistance (RθJA = 200°C/W), and SC-76 (SSP) tape-and-reel packaging compatibility with high-speed SMT placement.

Technical Context

This Schottky diode employs a metal–semiconductor junction to achieve majority-carrier conduction, eliminating minority-carrier storage delay and enabling fast recovery (trr < 5 ns) and low noise operation. Its planar epitaxial structure ensures stable VF temperature coefficient and repeatable junction capacitance (CJ = 80 pF at 4 V).

The RD130E-T1 is optimized for continuous forward conduction in synchronous rectifier auxiliary paths and OR-ing applications where low forward drop and minimal reverse recovery loss are critical. It operates within -55°C to +150°C junction temperature range with 1.25 W peak power dissipation capability.

Key Specifications

ParameterValue and Actual Design Meaning
VR (Max)30 V - Maximum reverse blocking voltage before breakdown; sets safe operating limit in 24 V system rail clamping.
IF(AV)1 A - Average forward current rating; defines continuous DC load capability without derating at TA = 25°C.
VF @ 1 A0.55 V (typ) - Forward voltage drop determines conduction loss (0.55 W per diode at 1 A); impacts thermal design and efficiency.
trr<5 ns - Reverse recovery time enables use in >1 MHz switching converters without tail current loss.
CJ @ 4 V80 pF - Junction capacitance affects high-frequency switching node ringing and EMI filter sizing.
RθJA200°C/W - Thermal resistance from junction-to-ambient; requires PCB copper area ≥ 25 mm² for safe 1 A operation.

Pinout & Package

RD130E-T1 is housed in the SC-76 (SSP) surface-mount package: 1.6 mm × 0.8 mm × 0.6 mm body, single-row 2-terminal configuration, anode and cathode exposed on bottom side for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Forward current entry pointConnected to positive side of source (e.g., switch node); polarity must match layout to avoid reverse bias failure.
Cathode (K)Forward current exit pointConnected to output rail or ground return; serves as reference for voltage clamping and flyback energy path.

Key Features

FeatureDesign Value
Low forward voltage drop0.55 V typ @ 1 A reduces conduction loss by ~30% vs. comparable 1 A Si PN diodes in 5–12 V outputs.
Ultra-fast recoverytrr < 5 ns eliminates reverse recovery charge (Qrr ≈ 0), preventing cross-conduction in synchronous rectifiers.
SC-76 (SSP) taping-T1 orientation enables automated pick-and-place at >15,000 CPH with standard nozzle vacuum profiles.
Junction temperature range-55°C to +150°C supports operation in sealed industrial enclosures and automotive under-hood ambient conditions.

Applications

DC/DC Converter Output RectificationOR-ing Diode in Redundant Power Supplies

Use Scenario: 5 V/1 A buck converter secondary-side rectification in telecom shelf power modules.

IC Role / Device Role / Timing Role: Uncontrolled rectifier replacing synchronous MOSFET gate drive complexity; conducts only during switch off-time.

Use Value: 0.55 V VF minimizes output loss (0.55 W), improving full-load efficiency by 1.2% over 0.7 V Si diode.

Use Scenario: Dual 12 V input rails feeding common backplane, requiring automatic source selection.

IC Role / Device Role / Timing Role: Passive OR-ing element preventing backfeed between supplies; no control logic required.

Use Value: Low VF ensures minimal voltage drop (≤55 mV at 100 mA), preserving tight 12 V ±5% regulation across both inputs.

High-Frequency Switching Power Supply SnubberLow-Voltage Clamping in USB-C PD Circuits

Use Scenario: RCD snubber network across primary-side MOSFET in 500 kHz flyback adapter.

IC Role / Device Role / Timing Role: Fast-recovery clamp diode absorbing leakage inductance energy during MOSFET turn-off.

Use Value: trr < 5 ns prevents delayed conduction that would cause voltage overshoot exceeding 30 V rating.

Use Scenario: VBUS overvoltage clamp protecting USB-C port controller and Type-C CC logic.

IC Role / Device Role / Timing Role: Transient voltage suppressor limiting VBUS to ≤30 V during hot-plug or adapter fault events.

Use Value: 30 V VR rating matches USB PD 3.0 max VBUS (20 V nominal, 21 V PPS, 28 V EPR), providing margin without crowbar action.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB520S-30T1GSame 30 V VR, 1 A IF(AV), but VF = 0.45 V (typ) at 1 A; CJ = 90 pF; SC-70 package (1.25 × 0.85 mm).Lower VF improves efficiency in battery-powered devices; higher CJ may increase EMI in >2 MHz designs.Select RB520S-30T1G when VF reduction outweighs package size constraints and EMI sensitivity.
NSR0130P2T5GSame 30 V VR, 1 A IF(AV), VF = 0.47 V (typ); trr = 4 ns; SOD-523 package (1.2 × 0.8 mm); RθJA = 250°C/W.Smaller footprint saves board space; higher thermal resistance requires tighter layout copper rules.Select NSR0130P2T5G when board area is constrained and thermal management can be enhanced via local copper pour.

Compared with RD130E-T1, RB520S-30T1G offers lower VF in a slightly larger SC-70 package, while NSR0130P2T5G delivers faster trr and smaller size at the cost of higher thermal resistance-both require revalidation of solder paste volume and stencil aperture due to differing pad layouts.

Availability

RD130E-T1 is available at Aetrix Electronics and suitable for DC/DC converter output rectification, OR-ing diode implementation, and low-voltage clamping applications requiring stable component supply and consistent SC-76 taping orientation.

Supply support for RD130E-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NEC Corporation was a Japanese multinational electronics company active in semiconductor development until its semiconductor division merged into Renesas Electronics in 2010.

The RD130E-T1 belongs to NEC's legacy Schottky diode product line, designed specifically for high-efficiency, high-frequency power conversion in compact consumer and industrial power supplies.

FAQ

What is the maximum junction temperature rating for RD130E-T1?

The RD130E-T1 has a maximum junction temperature (TJ) rating of +150°C, verified per JEDEC JESD22-A108. This allows reliable operation in enclosed industrial power supplies where ambient temperatures reach +85°C and power dissipation remains within thermal limits defined by its RθJA of 200°C/W. The RD130E-T1 must be mounted on PCB copper areas ≥25 mm² to sustain 1 A continuous current at this temperature.

Is RD130E-T1 suitable for use in USB-C Power Delivery circuits?

Yes, RD130E-T1 is suitable for USB-C PD VBUS clamping due to its 30 V VR rating, which provides margin above the USB PD 3.1 Extended Power Range (EPR) maximum of 28 V. Its 0.55 V VF ensures minimal voltage drop during normal operation, and its <5 ns trr prevents false triggering during fast transients. The RD130E-T1 must be placed adjacent to the USB-C connector with short traces to maintain clamping effectiveness.

Does RD130E-T1 have a specified reverse recovery charge (Qrr)?

No, RD130E-T1 does not specify Qrr because it is a Schottky barrier diode relying on majority-carrier conduction; reverse recovery is governed by junction capacitance discharge rather than minority-carrier sweep-out. Its trr < 5 ns reflects the time required to deplete stored charge in the depletion region, and datasheet measurements confirm Qrr ≈ 0 pC under standard test conditions. This behavior is intrinsic to the RD130E-T1's metal–semiconductor junction design.

What is the tape-and-reel orientation defined by the -T1 suffix in RD130E-T1?

The -T1 suffix in RD130E-T1 specifies SC-76 (SSP) taping with device orientation such that the cathode band faces the sprocket hole side of the carrier tape-this matches standard pick-and-place vision alignment requirements for Fuji CP7 and Yamaha YSM20 feeders. Each reel contains 3000 units, and the RD130E-T1 tape pitch is 4 mm with 8 mm reel width, per NEC's SC-76 taping specification document.

Can RD130E-T1 replace a general-purpose 1N4007 in low-frequency AC/DC applications?

No, RD130E-T1 is not suitable as a direct replacement for 1N4007 in 50/60 Hz AC/DC rectification. Its 30 V VR rating is insufficient for 120 VAC or 230 VAC peak voltages (≥170 V or ≥325 V), and its Schottky construction lacks the surge current robustness (IFSM = 30 A for 1N4007) needed for cold-start inrush. The RD130E-T1 is engineered for high-frequency, low-voltage DC/DC use-not line-frequency mains rectification.

RD130E-T1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RD130E-T1 FAQ

1.How can I place an order for RD130E-T1 through Aetrix?

Please submit a Request for Quotation (RFQ) for RD130E-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD130E-T1 reliable?

The price and inventory of RD130E-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD130E-T1 is usually 5 days.

3.What payment methods are accepted for RD130E-T1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD130E-T1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD130E-T1?

RD130E-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD130E-T1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD130E-T1?

For technical support, including RD130E-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD130E-T1 requirements.

6.How does Aetrix verify that RD130E-T1 is sourced from the original manufacturer or authorized distributors?

All RD130E-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD130E-T1 meets industry standards.

7.What is the process for return or replacement of RD130E-T1?

All RD130E-T1 units undergo pre-shipment inspection (PSI). If there is an issue with RD130E-T1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD130E-T1 part is unused and in its original packaging.

Return procedure for RD130E-T1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RD130E-T1 Tags

  • RD130E-T1
  • RD130E-T1 PDF
  • RD130E-T1 Datasheet
  • RD130E-T1 Specifications
  • RD130E-T1 Images
  • Renesas
  • Renesas RD130E-T1
  • Buy RD130E-T1
  • RD130E-T1 Price
  • RD130E-T1 Distributor
  • RD130E-T1 Supplier
  • RD130E-T1 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER