Renesas RD13F-T8

Overview

RD13F-T8 from Renesas Electronics is a 1 W planar silicon zener diode with nominal zener voltage of 13 V (B grade, min 12.19 V / max 13.83 V), dynamic impedance of 10 Ω at 20 mA, and temperature coefficient of +10 mV/°C - designed for precision voltage regulation and surge absorption in power supply feedback loops and protection circuits.

For engineers reviewing the RD13F-T8 datasheet, RD13F-T8 pinout, RD13F-T8 application, or RD13F-T8 equivalent, key selection criteria include its DO-41 glass-sealed DHD package, 175°C junction rating, 400 W surge capability (t = 10 μs), and E24-standardized voltage tolerance - critical for industrial power rail stabilization and overvoltage clamping.

Technical Context

This device operates as a two-terminal voltage reference using planar junction technology with glass passivation, enabling stable reverse breakdown under controlled thermal conditions. Its zener voltage exhibits a positive temperature coefficient (+10 mV/°C) above ~5.6 V, minimizing drift across ambient ranges up to 125°C.

The RD13F-T8 is rated for 1 W continuous dissipation at 25°C with derating to zero at 175°C junction temperature, and supports transient surge power of 400 W for 10 μs pulses - validated per Figure 7 of D13936EJ5V0DS. It complies with JEDEC DO-41 mechanical standards and RoHS requirements.

Key Specifications

Pinout & Package

RD13F-T8 uses a DO-41 glass-sealed axial package (JEDEC standard) with cathode indicated by a black band. The device has two terminals: anode and cathode - no internal connections or multi-pin configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Compared with RD13F-T8, the 1N4742A offers tighter V_Z tolerance at lower voltage, while BZX85C13 trades regulation precision for higher power headroom - making RD13F-T8 optimal for 13 V feedback loops demanding low Z_Z and predictable +10 mV/°C drift.

Availability

RD13F-T8 is available at Aetrix Electronics and suitable for industrial power supplies, sensor interface protection, and DC bus monitoring requiring stable component supply and long-lifecycle support.

Supply support for RD13F-T8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

RD13F-T8 belongs to the RD2.0F–RD82F planar zener diode family, engineered for high-reliability voltage regulation and transient suppression in standard-grade industrial applications.

FAQ

What is the exact zener voltage range for RD13F-T8 at 20 mA test current?

The RD13F-T8 has a guaranteed zener voltage range of 12.19 V to 13.83 V when measured at I_Z = 20 mA and T_A = 25°C, per the B grade specification in Renesas datasheet D13936EJ5V0DS. This 1.64 V span reflects the E24-series tolerance and is validated using 40 ms pulse testing to avoid thermal drift during measurement. RD13F-T8 maintains this range across its qualified operating temperature limits.

Does RD13F-T8 have a cathode marking, and how is polarity identified?

Yes, RD13F-T8 features a black cathode band on the glass body - consistent with JEDEC DO-41 standard marking. The banded end is the cathode, which must be connected to the higher-potential node in zener operation. This marking is laser-permanent and visible under standard inspection lighting; no additional silkscreen or orientation indicators are used. RD13F-T8's axial lead configuration requires correct orientation during manual or automated placement.

What is the maximum allowable surge power for RD13F-T8, and under what conditions?

RD13F-T8 supports a maximum surge reverse power of 400 W for pulse width t = 10 μs at T_A = 25°C, as defined in Figure 7 of the official datasheet. This rating assumes non-repetitive operation and requires external series impedance to limit peak current. RD13F-T8 does not specify repetitive surge capability, and exceeding 10 μs duration or applying multiple pulses without adequate cooling risks permanent parametric shift or junction failure.

How does the +10 mV/°C temperature coefficient of RD13F-T8 affect circuit design?

The +10 mV/°C zener voltage temperature coefficient of RD13F-T8 means its breakdown voltage increases linearly with junction temperature - beneficial for compensating negative tempcos in associated components like resistors or op-amps. In practice, RD13F-T8 contributes <±15 mV drift over −40°C to +85°C ambient, assuming proper thermal management. Designers should account for this slope when setting precision thresholds, especially in unregulated environments where self-heating may add +2–3 mV/°C beyond ambient effects.

Is RD13F-T8 compliant with RoHS and REACH regulations?

Yes, RD13F-T8 meets EU RoHS Directive 2011/65/EU requirements for restricted substances and is compliant with REACH SVHC regulations, as confirmed by Renesas Electronics' material declarations and manufacturing process controls. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and its glass-sealed DO-41 package uses lead-free solderable terminations. RD13F-T8 documentation confirms full environmental compliance per Renesas' published substance lists.