Renesas RD2.0F(N)-T7

Overview

RD2.0F(N)-T7 from Renesas Electronics is a 1 W planar-type silicon Zener diode with a nominal zener voltage of 2.0 V (B2 grade: 2.01–2.25 V), dynamic impedance ≤40 Ω at 40 mA, and reverse current ≤200 μA at 0.5 V. It features a DO-41 glass-sealed DHD (Double Heatsink Diode) package and is rated for junction temperatures up to 175°C. It is used in precision voltage reference and overvoltage protection circuits in industrial power supplies.

For engineers reviewing the RD2.0F(N)-T7 datasheet, RD2.0F(N)-T7 pinout, RD2.0F(N)-T7 application, or RD2.0F(N)-T7 equivalent, key selection criteria include its tight 2.0 V zener tolerance (±5.5% max), low dynamic impedance for stable regulation under load variation, surge reverse power rating of 400 W (10 μs), and suitability for constant-voltage clamping in DC bias networks.

Technical Context

This device operates as a two-terminal voltage-reference element relying on controlled reverse-breakdown conduction. Its planar junction structure ensures reproducible breakdown characteristics and low leakage across temperature. The DO-41 package provides mechanical robustness and thermal dissipation via axial leads soldered to PCB copper areas.

Zener voltage is specified at 40 ms after power-on per JEDEC test conditions, and temperature coefficient is −1.5 mV/°C (typical), indicating slight negative drift with rising ambient temperature. Dynamic impedance is measured with superimposed AC signal at 40 mA, confirming regulation stability under small-signal ripple conditions.

Key Specifications

Pinout & Package

RD2.0F(N)-T7 uses a DO-41 axial-leaded glass package (JEDEC standard), with cathode indicated by a black band. Leads are tinned copper-clad steel, suitable for wave or hand soldering. Thermal performance depends on PCB copper area (see Figure 2: R_th drops from 240°C/W at S = 5 mm² to 120°C/W at S = 20 mm²).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4705A-T and BZX55C2V0, RD2.0F(N)-T7 offers superior thermal capability (1 W vs. 0.5 W), lower dynamic impedance (40 Ω vs. ≥100 Ω), and tighter B2-grade voltage control - making it the preferred choice for industrial-grade voltage referencing requiring long-term stability and surge resilience.

Availability

RD2.0F(N)-T7 is available at Aetrix Electronics and suitable for industrial power supplies, sensor interface modules, and relay driver protection circuits requiring stable component supply and long-lifecycle support.

Supply support for RD2.0F(N)-T7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

RD2.0F(N)-T7 belongs to the RD2.0F–RD82F Zener diode family designed for standardized, high-reliability voltage regulation and transient suppression in industrial and computing equipment.

FAQ

What is the exact zener voltage tolerance for RD2.0F(N)-T7?

The RD2.0F(N)-T7 is manufactured to the B2 voltage grade, specifying a zener voltage range of 2.01 V to 2.25 V at 40 mA test current. This corresponds to a maximum deviation of ±5.5% from the nominal 2.0 V value, verified per the D13936EJ5V0DS datasheet's Electrical Characteristics table.

Can RD2.0F(N)-T7 be used in place of a 2.0 V shunt reference IC?

RD2.0F(N)-T7 provides basic 2.0 V regulation but lacks the temperature stability, initial accuracy, and low noise of integrated shunt references like TL431. It is suitable for non-critical biasing or clamping where ±5.5% tolerance and −1.5 mV/°C drift are acceptable - RD2.0F(N)-T7 should not replace precision references in feedback loops demanding <0.5% total error.

What is the maximum allowable surge pulse duration for RD2.0F(N)-T7 at 400 W?

Per Figure 7 in the RD2.0F–RD82F datasheet, RD2.0F(N)-T7 supports a surge reverse power of 400 W only for pulse widths up to 10 μs. Longer pulses require proportional derating - e.g., 100 W at 100 μs - and must remain non-repetitive to avoid junction overheating and permanent degradation of RD2.0F(N)-T7.

Does RD2.0F(N)-T7 meet RoHS requirements?

Yes, RD2.0F(N)-T7 complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits - consistent with Renesas' commitment to environmentally responsible manufacturing of RD2.0F(N)-T7.

How does the DO-41 package of RD2.0F(N)-T7 affect thermal performance?

The DO-41 package relies on PCB copper area for heat dissipation. As shown in Figure 2 of the datasheet, thermal resistance (R_th) drops from 240°C/W (5 mm² copper) to 120°C/W (20 mm² copper). To sustain 1 W dissipation, RD2.0F(N)-T7 requires ≥20 mm² of 1-oz copper connected to both leads - undersized layouts will exceed the 175°C junction limit and cause premature failure of RD2.0F(N)-T7.