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Renesas RD2.0MW-T1B-A

Part No.:
RD2.0MW-T1B-A
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixRD2.0MW-T1B-A.pdf
Description:
RD2.0MW-T1B-A - ZENER DIODES 200
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:44,184

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Product details

Overview

RD2.0MW-T1B-A from Renesas Electronics is a 200 mW, 3-pin Mini Mold (SC-59) dual-cathode zener diode with nominal zener voltage 2.0 V (±5% tolerance, Class B), 100 Ω dynamic impedance at 5 mA, and 0.5 V reverse leakage threshold - used for precision voltage reference, ESD protection, and waveform clipping in low-power analog signal paths.

For engineers reviewing the RD2.0MW-T1B-A datasheet, RD2.0MW-T1B-A pinout, RD2.0MW-T1B-A application, or RD2.0MW-T1B-A equivalent, key selection criteria include its dual-cathode configuration (K1/K2), 200 mW power rating, 120 Ω max dynamic impedance, 150°C junction temperature limit, and SC-59 package compatibility with automated SMT assembly.

Technical Context

This device implements a monolithic dual-zener structure in a single SC-59 package, enabling bidirectional clamping or independent cathode referencing. Its E24-standardized 2.0 V zener voltage supports stable biasing in low-voltage logic interfaces and sensor conditioning circuits.

The RD2.0MW-T1B-A operates within a –55°C to +150°C storage range and delivers 85 W surge absorption capability at 10 µs pulse width. It exhibits a negative temperature coefficient below 5 V, with typical γZ of –0.06 %/°C, making it suitable for ambient-stable reference applications where thermal drift must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ1.90–2.20 V at IZ = 5 mA - defines precise clamping threshold for 2.0 V rail regulation
Dynamic Impedance ZZ≤100 Ω at IZ = 5 mA - ensures minimal voltage shift under load variation
Power Dissipation P200 mW at TA = 25°C - sets maximum continuous DC power handling in standard PCB layout
Peak Reverse Power PRSM85 W at t = 10 µs - enables robust transient suppression against ESD and fast surges
Reverse Leakage IR≤100 µA at VR = 0.5 V - guarantees low standby current in high-impedance bias networks
Junction Temperature Tj150°C maximum - determines thermal derating curve for operation above 25°C ambient
Forward Voltage VF≤0.35 V at IF = 5 mA - supports low-loss forward conduction in dual-cathode clamp configurations

Pinout & Package

RD2.0MW-T1B-A uses the SC-59 (EIAJ) 3-pin Mini Mold package: 2.9 mm × 2.8 mm × 1.1–1.4 mm height, with gull-wing leads and standardized marking orientation (K2 on pin 2, K1 on pin 1, A on pin 3).

Pin/TerminalCircuit RoleDesign Meaning
1 (K1)First CathodeEnables independent zener operation between Anode and K1; used for primary clamping path
2 (K2)Second CathodeProvides second zener junction for bidirectional protection or dual-reference generation
3 (A)AnodeCommon anode terminal shared by both zener junctions; connects to ground or low-side reference

Key Features

FeatureDesign Value
Dual-cathode monolithic constructionEnables compact bidirectional clamping without discrete diode pairing or board space penalty
E24-standardized zener voltageEnsures interchangeability across design revisions and supplier sourcing without recalibration
85 W surge absorption (10 µs)Meets IEC 61000-4-2 Level 4 ESD immunity requirements when properly decoupled
SC-59 surface-mount packageSupports 0.65 mm lead pitch reflow assembly and automated optical inspection (AOI)
Negative temperature coefficient (–0.06 %/°C)Compensates for positive drift in associated circuitry, improving overall thermal stability

Applications

USB Interface ProtectionSensor Signal Conditioning

Use Scenario: Protecting USB D+ and D− lines from ESD events in portable host devices.

IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between data lines and ground.

Use Value: RD2.0MW-T1B-A's dual-cathode configuration allows symmetric clamping of both differential lines using a single device, reducing component count and layout area by 50% versus discrete solutions.

Use Scenario: Stabilizing bias voltage for analog-output temperature or pressure sensors operating near 2.0 V.

IC Role / Device Role / Timing Role: Precision shunt reference providing low-drift excitation voltage.

Use Value: RD2.0MW-T1B-A's 1.90–2.20 V zener range and ≤100 Ω dynamic impedance maintain sensor output linearity within ±0.5% over 0–70°C ambient.

Low-Voltage Logic ClampWaveform Shaping Circuit

Use Scenario: Preventing overvoltage damage to 2.5 V or 3.3 V microcontroller GPIO pins during hot-plug events.

IC Role / Device Role / Timing Role: Input-level clamp limiting pin voltage to safe margin below absolute maximum ratings.

Use Value: RD2.0MW-T1B-A's 0.35 V forward voltage and 2.20 V zener ceiling ensure GPIO remains within 0.3 V of VDD during fault conditions, avoiding latch-up.

Use Scenario: Generating square-wave harmonics from sine-wave oscillator outputs in audio test equipment.

IC Role / Device Role / Timing Role: Symmetric waveform clipper shaping AC signal peaks at ±2.0 V.

Use Value: RD2.0MW-T1B-A's matched K1/K2 characteristics provide <10 mV asymmetry between positive/negative clipping thresholds, preserving waveform fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor MMBZ5221BSSingle-cathode, 2.0 V, 225 mW, SOT-23 package; no dual-cathode functionalityRequires two devices for bidirectional clamping; larger board footprintSelect when only unidirectional regulation is needed and SOT-23 footprint is preferred
Vishay SMBZ5221BSingle-cathode, 2.0 V, 350 mW, DO-214AA package; higher power but through-hole or larger SMDNot suitable for space-constrained 3-pin Mini Mold layouts; lacks K1/K2 terminal separationSelect when higher surge energy handling (>85 W) is required and board area permits larger package

Compared with MMBZ5221BS and SMBZ5221B, RD2.0MW-T1B-A uniquely integrates dual cathodes in SC-59, enabling true bidirectional clamping in minimal area - critical for USB, sensor, and low-voltage logic protection where layout density and symmetry matter.

Availability

RD2.0MW-T1B-A is available at Aetrix Electronics and suitable for USB interface protection, sensor signal conditioning, low-voltage logic clamp, and waveform shaping circuits requiring stable component supply and consistent parametric performance across production lots.

Supply support for RD2.0MW-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for automotive, industrial, and consumer systems.

The RD2.0MW-T1B-A belongs to Renesas' legacy zener diode portfolio designed for precision voltage reference and transient protection in cost-sensitive, space-constrained applications - emphasizing reliability, tight tolerances, and standardized packaging for high-volume manufacturing.

FAQ

What is the exact zener voltage tolerance for RD2.0MW-T1B-A?

The RD2.0MW-T1B-A has a guaranteed zener voltage range of 1.90 V to 2.20 V at 5 mA test current, corresponding to ±5% tolerance per E24 standard. This specification is verified per Renesas Data Sheet D10247EJ5V0DS00, Section "ELECTRICAL CHARACTERISTICS", and applies to all units shipped under this part number.

Does RD2.0MW-T1B-A support bidirectional ESD protection out of the box?

Yes - RD2.0MW-T1B-A integrates two independent zener junctions sharing a common anode (pin 3), with dedicated cathodes on pins 1 (K1) and 2 (K2). This allows symmetrical clamping between either cathode and the anode, enabling true bidirectional transient suppression without external components.

What is the maximum allowable surge pulse width for RD2.0MW-T1B-A at 85 W?

The 85 W peak reverse power rating for RD2.0MW-T1B-A is specified at a pulse width of 10 µs (t = 10 µs), as defined in the "MAXIMUM RATINGS" table of Renesas Data Sheet D10247EJ5V0DS00. Longer pulses require derating per the Fig. 6 Surge Reverse Power Ratings curve.

Can RD2.0MW-T1B-A be used as a replacement for standard 1N4728A in 3.3 V regulator feedback loops?

No - RD2.0MW-T1B-A is rated for 2.0 V nominal zener voltage and 200 mW dissipation, whereas 1N4728A is a 3.3 V, 1 W device. Substituting RD2.0MW-T1B-A would cause severe regulation failure. It is not a functional or electrical replacement for 1N4728A; use only in 2.0 V reference or clamping roles as specified in its datasheet.

Is RD2.0MW-T1B-A compliant with RoHS and lead-free assembly requirements?

Yes - RD2.0MW-T1B-A conforms to EU RoHS Directive 2011/65/EU and supports lead-free reflow soldering per J-STD-020. Renesas confirms environmental compliance in its product change notices and material declarations, and the device is marked "Pb-Free" in official packaging documentation.

RD2.0MW-T1B-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Obsolete
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59

RD2.0MW-T1B-A FAQ

1.How can I place an order for RD2.0MW-T1B-A through Aetrix?

Please submit a Request for Quotation (RFQ) for RD2.0MW-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD2.0MW-T1B-A reliable?

The price and inventory of RD2.0MW-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD2.0MW-T1B-A is usually 5 days.

3.What payment methods are accepted for RD2.0MW-T1B-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD2.0MW-T1B-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD2.0MW-T1B-A?

RD2.0MW-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD2.0MW-T1B-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD2.0MW-T1B-A?

For technical support, including RD2.0MW-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD2.0MW-T1B-A requirements.

6.How does Aetrix verify that RD2.0MW-T1B-A is sourced from the original manufacturer or authorized distributors?

All RD2.0MW-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD2.0MW-T1B-A meets industry standards.

7.What is the process for return or replacement of RD2.0MW-T1B-A?

All RD2.0MW-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with RD2.0MW-T1B-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD2.0MW-T1B-A part is unused and in its original packaging.

Return procedure for RD2.0MW-T1B-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RD2.0MW-T1B-A Tags

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