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Renesas RD3.0ES-T1-AZ
- Part No.:
- RD3.0ES-T1-AZ
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
RD3.0ES-T1-AZ.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
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Inventory:372,000
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Product details
Overview
RD3.0ES-T1-AZ from Renesas Electronics is a 400 mW DO-34 glass-sealed zener diode with nominal zener voltage of 3.0 V (2.85–3.22 V), dynamic impedance ≤50 Ω at 5 mA, knee impedance ≤120 Ω, and reverse current ≤1.0 µA at 0.5 V - used for precision voltage reference and overvoltage protection in low-power analog circuits.
For engineers reviewing the RD3.0ES-T1-AZ datasheet, RD3.0ES-T1-AZ pinout, RD3.0ES-T1-AZ application, or RD3.0ES-T1-AZ equivalent, key selection criteria include zener voltage tolerance, thermal resistance (junction-to-ambient), surge power rating (100 W @ 10 µs), and DO-34 package compatibility with 5 mm PCB pitch layouts.
Technical Context
This device uses planar diffusion technology and DHD (Double Heatsink Diode) construction to achieve 400 mW steady-state power dissipation and 100 W non-repetitive surge capability. Its zener voltage is specified per E24 standard with tight min/max limits (2.85–3.22 V) and tested using 40 ms pulses.
Thermal performance depends on PCB copper area: thermal resistance drops from 375°C/W (no copper) to ~200°C/W with 7 mm² board area. Temperature coefficient is negative and stable across the 3.0 V rating, supporting predictable biasing in temperature-sensitive references.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.85–3.22 V at IZ = 5 mA - defines stable regulation window for low-voltage reference design |
| Dynamic Impedance (ZZ) | ≤50 Ω at IZ = 5 mA - ensures minimal output voltage variation under load changes |
| Knee Impedance (ZZK) | ≤120 Ω - maintains regulation integrity near turn-on threshold for soft-clipping applications |
| Reverse Current (IR) | ≤1.0 µA at VR = 0.5 V - enables ultra-low leakage in battery-backed or high-impedance sensing nodes |
| Power Dissipation (P) | 400 mW at TA = 25°C - sets maximum continuous DC power limit before thermal derating applies |
| Surge Power (PRSM) | 100 W for t = 10 µs - provides transient overvoltage immunity without failure in signal-line protection |
| Junction Temperature (Tj) | –65 to +175°C - supports operation in extended industrial environments with no derating below 125°C |
Pinout & Package
RD3.0ES-T1-AZ is housed in a DO-34 (JEDEC) glass-sealed axial package with cathode indicated by a black band. Body length ≤2.4 mm, diameter φ2.0 mm max, lead pitch 5 mm - optimized for through-hole insertion and compact PCB layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node in reverse-biased zener configuration; carries forward current up to 150 mA |
| Cathode | Zener breakdown terminal | Marked with black band; connected to higher-potential node to enable controlled reverse breakdown at 3.0 V |
Key Features
| Feature | Design Value |
|---|---|
| DHD construction | Enables 400 mW dissipation in DO-34 package via dual thermal paths to PCB leads |
| E24-standard VZ | Ensures interchangeability with other 3.0 V zeners in legacy designs and BOM consolidation |
| DO-34 glass seal | Provides hermetic reliability and long-term stability in humid or chemically aggressive environments |
| Low knee impedance | Supports clean waveform clipping and accurate low-current regulation down to 0.5 mA |
| 100 W surge rating | Withstands ESD and inductive switching transients without parameter shift or catastrophic failure |
Applications
| Power Supply Reference | Signal-Level Clipping |
|---|---|
Use Scenario: Providing stable 3.0 V bias for op-amp input stages or ADC reference dividers in portable instrumentation. IC Role / Device Role / Timing Role: Zener voltage reference element establishing precise DC offset and gain-setting node. Use Value: Tight 2.85–3.22 V tolerance and ≤50 Ω dynamic impedance ensure <±10 mV drift over load current changes from 1–10 mA. | Use Scenario: Limiting audio or sensor signal peaks to prevent amplifier saturation or ADC overrange in consumer audio front-ends. IC Role / Device Role / Timing Role: Bidirectional clamping diode (with series resistor) limiting positive swing to +3.0 V and negative swing to –0.7 V. Use Value: Low knee impedance (≤120 Ω) ensures sharp transition into conduction, minimizing distortion at clipping threshold. |
| Overvoltage Protection | Surge Absorption |
Use Scenario: Safeguarding microcontroller I/O pins against accidental 5 V or 12 V misconnection in industrial control panels. IC Role / Device Role / Timing Role: Shunt protection device clamping fault voltage to ≤3.22 V before damage occurs. Use Value: 100 W surge rating at 10 µs allows absorption of IEC 61000-4-5 Level 3 surges without degradation. | Use Scenario: Suppressing inductive kickback from relay coils or solenoid drivers in automotive body electronics. IC Role / Device Role / Timing Role: Transient voltage suppressor placed across coil terminals to clamp reverse EMF. Use Value: Fast response (<1 ns) and 175°C junction rating sustain repeated 100 W pulses without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4723TR | 3.3 V nominal, ±5% tolerance (3.14–3.47 V), 1.0 W rating, DO-41 package | Higher power and looser voltage tolerance; requires PCB pad redesign due to larger DO-41 footprint | Choose when higher surge margin is needed and board space allows larger package |
| BZX55-C3V0 | 3.0 V nominal, ±5% tolerance (2.85–3.15 V), 500 mW rating, DO-35 package | Slightly tighter VZ range but higher PD; DO-35 has shorter body (2.0 mm) and different lead spacing | Prefer for new designs needing higher power headroom and RoHS-compliant packaging |
Compared with RD3.0ES-T1-AZ, 1N4723TR offers greater surge resilience but sacrifices voltage precision and board density; BZX55-C3V0 improves power margin and modern packaging but requires revalidation of thermal layout due to differing thermal resistance characteristics.
Availability
RD3.0ES-T1-AZ is available at Aetrix Electronics and suitable for voltage reference, signal clipping, overvoltage protection, and surge absorption applications requiring stable component supply and long-lifecycle support.
Supply support for RD3.0ES-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The RD2.0ES to RD39ES series was designed for cost-sensitive, high-reliability voltage regulation in standard-grade industrial and consumer equipment - emphasizing DO-34 compatibility, E24 voltage coverage, and robust surge handling.
FAQ
What is the zener voltage tolerance of RD3.0ES-T1-AZ?
The RD3.0ES-T1-AZ has a guaranteed zener voltage range of 2.85 V to 3.22 V when tested at 5 mA, corresponding to an asymmetric tolerance centered on 3.0 V. This specification is confirmed in the official Renesas datasheet D13935EJ7V0DS and reflects E24 standard compliance. The RD3.0ES-T1-AZ achieves this tight spread using planar diffusion and DHD construction, making it suitable for applications where ±3.5% regulation accuracy is required without external trimming.
Is RD3.0ES-T1-AZ RoHS compliant?
Yes, RD3.0ES-T1-AZ is RoHS compliant. Although the original datasheet predates the EU RoHS Directive's enforcement, Renesas Electronics confirms that all active production lots of the RD2.0ES–RD39ES series meet RoHS requirements, including lead-free glass encapsulation and termination finishes. The RD3.0ES-T1-AZ uses no restricted substances above threshold limits, and full compliance documentation is available upon request from Aetrix Electronics for traceable procurement.
Can RD3.0ES-T1-AZ replace a 3.3 V zener diode in existing designs?
No - RD3.0ES-T1-AZ is not a direct replacement for 3.3 V zeners due to its distinct 2.85–3.22 V regulation band. Substituting it for an RD3.3ES-T1-AZ (3.16–3.53 V) or similar part would cause under-regulation, potentially leading to unstable bias points or insufficient clamping. The RD3.0ES-T1-AZ must be selected only where 3.0 V nominal regulation is explicitly required; cross-voltage substitution requires circuit-level validation of operating margins and thermal behavior.
What is the maximum forward current rating for RD3.0ES-T1-AZ?
The absolute maximum forward current for RD3.0ES-T1-AZ is 150 mA at TA = 25°C, as specified in the "Absolute Maximum Ratings" table of Renesas datasheet D13935EJ7V0DS. This rating applies to continuous DC conduction; pulse operation may allow brief excursions beyond this limit if average power remains within 400 mW and junction temperature stays below 175°C. The RD3.0ES-T1-AZ is not intended for rectification duty - its primary function is reverse-biased zener regulation.
Does RD3.0ES-T1-AZ have a specified temperature coefficient?
Yes - RD3.0ES-T1-AZ exhibits a negative temperature coefficient, typical for low-voltage zeners. While the datasheet does not list a numeric γZ value specifically for RD3.0ES-T1-AZ, Figure 9 shows that 3.0 V-class devices in the RD2.0ES–RD39ES family have a temperature coefficient of approximately –0.05%/°C (or –1.5 mV/°C). This behavior is inherent to the planar zener structure and must be accounted for in precision reference designs operating across –40°C to +85°C ambient ranges. The RD3.0ES-T1-AZ's coefficient is consistent with adjacent variants like RD2.7ES and RD3.3ES.
RD3.0ES-T1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RD3.0ES-T1-AZ FAQ
1.How can I place an order for RD3.0ES-T1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for RD3.0ES-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RD3.0ES-T1-AZ reliable?
The price and inventory of RD3.0ES-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD3.0ES-T1-AZ is usually 5 days.
3.What payment methods are accepted for RD3.0ES-T1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD3.0ES-T1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RD3.0ES-T1-AZ?
RD3.0ES-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RD3.0ES-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RD3.0ES-T1-AZ?
For technical support, including RD3.0ES-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD3.0ES-T1-AZ requirements.
6.How does Aetrix verify that RD3.0ES-T1-AZ is sourced from the original manufacturer or authorized distributors?
All RD3.0ES-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD3.0ES-T1-AZ meets industry standards.
7.What is the process for return or replacement of RD3.0ES-T1-AZ?
All RD3.0ES-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with RD3.0ES-T1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RD3.0ES-T1-AZ part is unused and in its original packaging.
Return procedure for RD3.0ES-T1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RD3.0ES-T1-AZ Tags
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