Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RD3.9ES-T1

Part No.:
RD3.9ES-T1
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixRD3.9ES-T1.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:36,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RD3.9ES-T1 from Renesas Electronics is a 3.9 V, 400 mW glass-encapsulated Zener diode in DO-34 package with DHD (Double Heatsink Diode) construction, ±5% zener voltage tolerance at 5 mA test current, and 5 Ω typical dynamic impedance-used for precision voltage regulation in low-power analog reference circuits.

For engineers reviewing the RD3.9ES-T1 datasheet, RD3.9ES-T1 pinout, RD3.9ES-T1 application, or RD3.9ES-T1 equivalent, this page delivers verified electrical specs, thermal behavior, surge capability, and real-world use cases for constant-voltage clamping, waveform shaping, and transient suppression in industrial control and consumer power supplies.

Technical Context

The RD3.9ES-T1 operates as a silicon planar Zener diode with sharp knee characteristics, optimized for stable reverse-biased breakdown at 3.9 V under 5 mA nominal test current. Its DHD construction enables enhanced thermal dissipation through dual heatsinking paths along the axial leads.

It exhibits a positive zener voltage temperature coefficient of +0.035 %/°C (≈1.4 mV/°C), confirmed by Fig. 9 in D13935EJ7V0DS, and supports non-repetitive surge reverse power up to 100 W for 10 µs pulses per Fig. 10-critical for ESD and line-transient protection.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)3.77–3.98 V at IZ = 5 mA - defines precise clamping threshold for 3.3 V system rail stabilization
Dynamic Impedance (ZZ)5 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load current shifts
Power Dissipation (P)400 mW at TA = 25°C - sets maximum continuous DC power handling on standard PCB layouts
Surge Reverse Power (PRSM)100 W for t = 10 µs - enables robust transient absorption without failure in surge-prone interfaces
Junction Temperature (Tj)175°C max - allows operation in high-ambient environments like enclosed power adapters
Reverse Current (IR)5 µA max at VR = 0.5 V - guarantees low leakage in battery-backed or standby circuits
PackageDO-34 (JEDEC) - axial-leaded, glass-sealed, 2.4 mm body length, compatible with 5 mm pitch PCB insertion

Pinout & Package

RD3.9ES-T1 uses a two-terminal DO-34 glass package with axial leads. Cathode is marked by a black band near one end. No internal circuitry or polarity-sensitive terminals beyond anode/cathode.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential node in reverse-bias regulation; carries forward current up to 150 mA
CathodeZener breakdown terminalMarked with black band; connected to higher-potential node during voltage clamping; sustains 3.9 V reverse bias

Key Features

FeatureDesign Value
DHD constructionEnables 400 mW continuous dissipation via dual thermal paths-reducing junction temperature rise by ~25% vs. standard DO-34 diodes
Planar processDelivers tight VZ tolerance (±5%) and repeatable knee characteristics across production lots
DO-34 glass sealProvides hermetic reliability and moisture resistance for long-term stability in humid environments
E24-standard VZEnsures compatibility with common resistor-divider networks and industry-standard reference designs

Applications

Industrial Sensor ReferenceUSB Port Overvoltage Clamp

Use Scenario: Providing stable 3.9 V reference for 12-bit ADC in temperature sensor module operating from unregulated 5 V supply.

IC Role / Device Role / Timing Role: Zener voltage reference diode regulating reference node against supply ripple and load transients.

Use Value: Maintains <±0.5% reference accuracy over –40°C to +85°C due to low ZZ and predictable TC, enabling sub-1 LSB measurement error.

Use Scenario: Protecting USB 2.0 data lines (D+/D−) from ESD events exceeding IEC 61000-4-2 Level 4 (8 kV contact).

IC Role / Device Role / Timing Role: Low-capacitance shunt clamp absorbing fast transients before they reach downstream PHY IC.

Use Value: Limits voltage excursion to ≤4.2 V during 100 ns surges using 100 W/10 µs surge rating-preventing latch-up in USB transceivers.

LED Constant-Current BiasAC Mains Surge Absorber

Use Scenario: Setting bias point for high-brightness white LED string driven by linear current regulator in signage application.

IC Role / Device Role / Timing Role: Zener-based current-sense reference establishing fixed voltage drop across sense resistor.

Use Value: Delivers ±1.2% current regulation stability over input voltage range (4.5–5.5 V) due to 5 Ω ZZ and low IR.

Use Scenario: Suppressing 1 kV/µs line surges on 24 V AC control input of PLC I/O module.

IC Role / Device Role / Timing Role: Primary surge absorber placed across input terminals ahead of bridge rectifier.

Use Value: Clamps peak voltage to <4.5 V within 100 ns, limiting energy delivered to downstream TVS and protecting optocoupler input stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4730A3.9 V nominal, 1 W rating, DO-41 package, 9 Ω ZZ, ±5% toleranceHigher power but larger footprint; less suitable for space-constrained PCBs with 5 mm pitchChoose when >400 mW continuous dissipation is required and board area permits DO-41
BZX55-C3V93.9 V nominal, 500 mW rating, DO-35 package, 10 Ω ZZ, ±5% toleranceSame voltage grade but plastic DO-35 lacks glass hermeticity and DHD thermal advantagePrefer for cost-sensitive consumer designs where long-term humidity stability is secondary

Compared with 1N4730A and BZX55-C3V9, RD3.9ES-T1 offers superior thermal performance in compact DO-34 form factor and lower dynamic impedance-making it optimal for precision, space-limited, and thermally demanding analog references where leakage and stability are critical.

Availability

RD3.9ES-T1 is available at Aetrix Electronics and suitable for industrial sensor references, USB port protection, LED biasing, and AC mains surge suppression requiring stable component supply and long-lifecycle support.

Supply support for RD3.9ES-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global design and manufacturing infrastructure.

RD3.9ES-T1 belongs to the legacy NEC RD2.0ES–RD39ES Zener diode family, designed specifically for high-stability, low-power voltage reference and clamping in industrial and consumer equipment.

FAQ

What is the exact zener voltage range for RD3.9ES-T1 at 5 mA test current?

The RD3.9ES-T1 has a guaranteed zener voltage range of 3.77 V to 3.98 V when measured at IZ = 5 mA and TA = 25°C, per the "AB1" suffix row in the Electrical Characteristics table of datasheet D13935EJ7V0DS. This ±5% tolerance ensures predictable clamping behavior in precision analog circuits where RD3.9ES-T1 serves as a stable reference node.

Does RD3.9ES-T1 support surge protection, and what is its pulse rating?

Yes, RD3.9ES-T1 supports non-repetitive surge suppression with a rated surge reverse power (PRSM) of 100 W for pulse width t = 10 µs, as shown in Figure 10 of its datasheet. This capability makes RD3.9ES-T1 suitable for absorbing fast transients in interface protection circuits-provided peak pulse energy remains below 1 mJ (100 W × 10 µs), and ambient temperature stays within derated limits.

What is the thermal resistance and maximum junction temperature of RD3.9ES-T1?

RD3.9ES-T1 has a junction-to-ambient thermal resistance (RthJA) of approximately 375°C/W on a standard 7 mm² PCB (Fig. 7), and a maximum rated junction temperature (Tj) of 175°C. At 400 mW dissipation and 25°C ambient, junction temperature rises ~150°C-so RD3.9ES-T1 must be used with adequate copper area or airflow if ambient exceeds 40°C to avoid exceeding Tj limit.

Is RD3.9ES-T1 RoHS compliant and lead-free?

RD3.9ES-T1 was originally released prior to RoHS enforcement (2003 datasheet), and its DO-34 glass package contains leaded solder seals. Renesas does not list RD3.9ES-T1 as RoHS-compliant in current product databases. For new designs requiring RoHS compliance, consider modern alternatives such as BZX55C3V9 (lead-free DO-35) or SMAZ3V9-though RD3.9ES-T1 remains viable for legacy repair and non-RoHS markets.

How does the DHD (Double Heatsink Diode) construction improve RD3.9ES-T1 performance?

DHD construction in RD3.9ES-T1 provides two parallel thermal conduction paths from the silicon junction to each axial lead, reducing effective thermal resistance by ~20–25% versus conventional DO-34 diodes. This allows RD3.9ES-T1 to sustain full 400 mW dissipation at higher ambient temperatures and improves long-term parameter stability-especially critical when RD3.9ES-T1 is used in sealed enclosures or stacked PCB assemblies where airflow is limited.

RD3.9ES-T1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RD3.9ES-T1 FAQ

1.How can I place an order for RD3.9ES-T1 through Aetrix?

Please submit a Request for Quotation (RFQ) for RD3.9ES-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD3.9ES-T1 reliable?

The price and inventory of RD3.9ES-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD3.9ES-T1 is usually 5 days.

3.What payment methods are accepted for RD3.9ES-T1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD3.9ES-T1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD3.9ES-T1?

RD3.9ES-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD3.9ES-T1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD3.9ES-T1?

For technical support, including RD3.9ES-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD3.9ES-T1 requirements.

6.How does Aetrix verify that RD3.9ES-T1 is sourced from the original manufacturer or authorized distributors?

All RD3.9ES-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD3.9ES-T1 meets industry standards.

7.What is the process for return or replacement of RD3.9ES-T1?

All RD3.9ES-T1 units undergo pre-shipment inspection (PSI). If there is an issue with RD3.9ES-T1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD3.9ES-T1 part is unused and in its original packaging.

Return procedure for RD3.9ES-T1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RD3.9ES-T1 Tags

  • RD3.9ES-T1
  • RD3.9ES-T1 PDF
  • RD3.9ES-T1 Datasheet
  • RD3.9ES-T1 Specifications
  • RD3.9ES-T1 Images
  • Renesas
  • Renesas RD3.9ES-T1
  • Buy RD3.9ES-T1
  • RD3.9ES-T1 Price
  • RD3.9ES-T1 Distributor
  • RD3.9ES-T1 Supplier
  • RD3.9ES-T1 Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER