Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas RD43E-T4-AZ

Part No.:
RD43E-T4-AZ
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixRD43E-T4-AZ.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:60,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

RD43E-T4-AZ from NEC Corporation is a silicon planar epitaxial Schottky barrier diode in SC-76 (SSP) package, rated for 40 V reverse voltage, 30 mA average forward current, and 0.55 V typical forward voltage at 10 mA, used in low-power signal rectification and ESD protection circuits in portable electronics.

For engineers reviewing the RD43E-T4-AZ datasheet, RD43E-T4-AZ pinout, RD43E-T4-AZ application, or RD43E-T4-AZ equivalent, key selection factors include its low VF, fast switching speed, small footprint SC-76 package, and suitability for space-constrained biasing and clamping functions in battery-powered devices.

Technical Context

This discrete Schottky diode employs a planar epitaxial structure to achieve low forward voltage drop and minimal reverse recovery time. Its junction capacitance is 2.0 pF at 1 V, supporting high-frequency signal routing and RF detector applications.

The device operates within -55°C to +150°C junction temperature range and exhibits 100 µA maximum reverse leakage current at rated VR, ensuring stable performance in thermally variable environments such as handheld communication modules.

Key Specifications

ParameterValue and Actual Design Meaning
VR (Reverse Voltage)40 V - Maximum DC blocking capability without breakdown
IF(AV) (Avg. Forward Current)30 mA - Continuous DC current handling in linear bias networks
VF (Forward Voltage)0.55 V @ 10 mA - Low conduction loss enabling efficient signal-level clamping
IR (Reverse Leakage)100 µA @ 40 V - Minimal standby power drain in high-impedance paths
CJ (Junction Capacitance)2.0 pF @ 1 V - Enables use in UHF signal coupling and detector circuits
TJ Operating Range-55°C to +150°C - Supports operation in automotive cabin and industrial sensor nodes

Pinout & Package

RD43E-T4-AZ is housed in the SC-76 (SSP) surface-mount package - a 2-pin, 1.25 mm × 0.85 mm × 0.55 mm molded plastic case with gull-wing leads, optimized for automated placement and reflow soldering on dense PCBs.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)Forward current entry pointConnected to higher-potential node in clamping or rectifying path
Cathode (K)Forward current exit / polarity referenceInternally tied to die substrate; marked by cathode band on package

Key Features

FeatureDesign Value
Low forward voltage0.55 V @ 10 mA reduces power loss in signal-path biasing networks
Fast switchingNegligible reverse recovery time enables use in >100 MHz detector circuits
Small outline packageSC-76 footprint (1.25 × 0.85 mm) saves board area in wearables and IoT sensors
High reliabilityQualified per JEDEC JESD22-A108 thermal cycling and JESD22-A110 HTOL stress tests

Applications

USB Data Line ProtectionRF Detector Biasing

Use Scenario: Clamping transient voltages on USB 2.0 D+ and D− lines during hot-plug events.

IC Role / Device Role / Timing Role: Discrete Schottky clamp protecting transceiver I/O pins from ESD and overvoltage.

Use Value: 0.55 V VF ensures minimal signal distortion while diverting >8 kV HBM ESD pulses.

Use Scenario: Providing temperature-stable DC bias to GaAs FET-based RF envelope detectors.

IC Role / Device Role / Timing Role: Low-capacitance anode-cathode path establishing stable quiescent point.

Use Value: 2.0 pF CJ avoids detuning of 900 MHz–2.4 GHz detector matching networks.

Portable Audio Amplifier BiasLow-Power Microcontroller Reset Clamping

Use Scenario: Generating precise VCC/2 reference for Class AB headphone amplifier input stages.

IC Role / Device Role / Timing Role: Paired Schottky diodes forming low-drift midpoint divider with matched VF.

Use Value: Tight VF consistency across production lot enables <±5 mV reference error at 10 mA.

Use Scenario: Limiting reset line voltage excursions during brown-out recovery in ARM Cortex-M0 systems.

IC Role / Device Role / Timing Role: Cathode-tied-to-VCC, anode-to-reset line configuration for positive-going clamp.

Use Value: 100 µA IR prevents unintended reset assertion during 3.3 V logic hold conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB520S-40T1GHigher IF(AV) = 200 mA; VF = 0.33 V @ 100 mA; same SC-76 packageBetter suited for higher-current bias rails; not optimized for ultra-low-leakage signal pathsSelect RB520S-40T1G when forward current exceeds 30 mA or lower VF is critical at >50 mA
NSR0330HT1GLower VR = 30 V; VF = 0.45 V @ 10 mA; identical SC-76 footprint and pinoutLimited to sub-30 V systems; tighter VF distribution but reduced blocking marginChoose NSR0330HT1G only if system VR stays ≤28 V and 0.1 V VF reduction justifies 10 V derating

Compared with RD43E-T4-AZ, RB520S-40T1G offers higher current capacity at the cost of less precise low-current VF matching, while NSR0330HT1G trades 10 V VR headroom for marginally lower conduction loss - making RD43E-T4-AZ optimal for 3.3–5 V signal integrity-critical designs requiring balanced VF, leakage, and voltage margin.

Availability

RD43E-T4-AZ is available at Aetrix Electronics and suitable for USB interface protection, RF detector biasing, portable audio amplifiers, and microcontroller reset clamping requiring stable component supply across production lifecycles.

Supply support for RD43E-T4-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NEC Corporation was a Japanese multinational electronics company active in semiconductor design, telecommunications, and IT infrastructure until its semiconductor division merged into Renesas Electronics in 2010.

The RD43E series belongs to NEC's legacy low-power Schottky diode product line, engineered specifically for signal-level rectification, clamping, and ESD protection in compact portable electronics.

FAQ

What is the maximum reverse voltage rating for RD43E-T4-AZ?

The RD43E-T4-AZ has a maximum repetitive peak reverse voltage (VRRM) of 40 V. This rating defines the highest DC or sinusoidal AC voltage the diode can block in reverse bias without entering avalanche breakdown. Exceeding this value risks permanent damage. The RD43E-T4-AZ maintains reliable operation up to this limit under specified thermal conditions.

Does RD43E-T4-AZ have a documented thermal resistance specification?

Yes, RD43E-T4-AZ specifies a junction-to-ambient thermal resistance (RθJA) of 450°C/W under standard JEDEC test conditions (1 cm² copper pad, 1 oz Cu, no airflow). This value reflects heat dissipation capability in typical PCB layouts and supports safe operation at its 30 mA average forward current within the -55°C to +150°C junction temperature range.

Is RD43E-T4-AZ compatible with lead-free reflow soldering processes?

Yes, RD43E-T4-AZ is qualified for lead-free reflow soldering per J-STD-020. Its SC-76 (SSP) package withstands peak temperatures up to 260°C for 10 seconds. The device's internal construction and molding compound meet RoHS Directive 2011/65/EU requirements, confirming full compatibility with Pb-free assembly lines.

What marking code identifies RD43E-T4-AZ on the package?

RD43E-T4-AZ is marked on the top surface with "43E" - a two-character alphanumeric code laser-etched onto the black epoxy body. This marking aligns with NEC's standard identification scheme for the RD43E family and allows visual verification during incoming inspection or rework. No date or lot code is included in the primary marking.

Can RD43E-T4-AZ be used in place of a general-purpose 1N4148 diode?

No, RD43E-T4-AZ is not a direct replacement for 1N4148. While both are small-signal diodes, RD43E-T4-AZ is a Schottky type with 0.55 V VF and 40 V VR, whereas 1N4148 is a silicon PN junction diode with ~0.7 V VF and 100 V VR. The RD43E-T4-AZ offers faster switching and lower VF but significantly lower reverse voltage tolerance and higher leakage - requiring circuit-level validation before substitution.

RD43E-T4-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RD43E-T4-AZ FAQ

1.How can I place an order for RD43E-T4-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for RD43E-T4-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD43E-T4-AZ reliable?

The price and inventory of RD43E-T4-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD43E-T4-AZ is usually 5 days.

3.What payment methods are accepted for RD43E-T4-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD43E-T4-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD43E-T4-AZ?

RD43E-T4-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD43E-T4-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD43E-T4-AZ?

For technical support, including RD43E-T4-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD43E-T4-AZ requirements.

6.How does Aetrix verify that RD43E-T4-AZ is sourced from the original manufacturer or authorized distributors?

All RD43E-T4-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD43E-T4-AZ meets industry standards.

7.What is the process for return or replacement of RD43E-T4-AZ?

All RD43E-T4-AZ units undergo pre-shipment inspection (PSI). If there is an issue with RD43E-T4-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD43E-T4-AZ part is unused and in its original packaging.

Return procedure for RD43E-T4-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RD43E-T4-AZ Tags

  • RD43E-T4-AZ
  • RD43E-T4-AZ PDF
  • RD43E-T4-AZ Datasheet
  • RD43E-T4-AZ Specifications
  • RD43E-T4-AZ Images
  • Renesas
  • Renesas RD43E-T4-AZ
  • Buy RD43E-T4-AZ
  • RD43E-T4-AZ Price
  • RD43E-T4-AZ Distributor
  • RD43E-T4-AZ Supplier
  • RD43E-T4-AZ Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER