Renesas RD5.1ES-T4

Overview

RD5.1ES-T4 from Renesas Electronics is a 5.1 V, 400 mW DO-34 glass-sealed Zener diode with DHD (Double Heatsink Diode) construction, designed for precision voltage regulation and surge suppression in low-power analog circuits. It delivers ±5% zener voltage tolerance at 5 mA test current, 1.5 Ω dynamic impedance, and supports 100 W non-repetitive surge power (t = 10 µs), commonly used in overvoltage clamping for microcontroller I/O protection.

For engineers reviewing the RD5.1ES-T4 datasheet, RD5.1ES-T4 pinout, RD5.1ES-T4 application, or RD5.1ES-T4 equivalent, key selection criteria include its 5.1 V nominal zener voltage, 1.5 Ω dynamic impedance at 5 mA, DO-34 package thermal resistance profile, and compliance with E24 standard voltage grading - all critical for stable reference and transient suppression in space-constrained PCB layouts.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain a stable reference voltage across its terminals under varying load and temperature conditions. Its planar silicon structure ensures consistent knee characteristics and low leakage, with a maximum reverse current of 5 µA at 0.5 V below VZ.

The DHD construction enhances thermal dissipation through dual heat paths into the PCB via axial leads, enabling reliable 400 mW continuous operation at TA = 25°C and derated performance up to 175°C junction temperature. Its DO-34 package supports 5 mm lead pitch insertion and meets JEDEC standards for mechanical robustness.

Key Specifications

Pinout & Package

RD5.1ES-T4 uses the DO-34 (JEDEC) axial glass package: 2.4 mm max body length, 5 mm lead spacing, black cathode band marking. Leads serve as both electrical terminals and primary thermal conduction paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX55C5V1 and 1N4733A, RD5.1ES-T4 offers optimal balance of precision (±5% VZ), compact DO-34 form factor, and verified 100 W surge handling - making it preferred for space-constrained, low-power reference and clamping where thermal management is limited.

Availability

RD5.1ES-T4 is available at Aetrix Electronics and suitable for voltage reference, transient suppression, and waveform shaping applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for RD5.1ES-T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The RD5.1ES-T4 belongs to the RD2.0ES–RD39ES series of planar Zener diodes engineered for high-stability voltage regulation and transient protection in industrial and consumer electronics - emphasizing precision, thermal robustness, and JEDEC-compliant packaging.

FAQ

What is the zener voltage tolerance of RD5.1ES-T4 at 5 mA test current?

The RD5.1ES-T4 has a zener voltage range of 4.85 V to 5.35 V at IZ = 5 mA, corresponding to ±5% tolerance around the nominal 5.1 V rating. This specification is confirmed in the Electrical Characteristics table of Renesas document D13935EJ7V0DS and applies directly to the RD5.1ES-T4 variant with AB1/AB2/AB3 suffixes. The RD5.1ES-T4 maintains this tolerance under standard test conditions (TA = 25°C, pulse testing).

Does RD5.1ES-T4 support surge protection, and what is its rated surge power?

Yes, RD5.1ES-T4 is rated for 100 W non-repetitive surge reverse power at t = 10 µs, as specified in the Absolute Maximum Ratings table. This capability enables effective transient suppression for ESD and inductive kick events. The RD5.1ES-T4 achieves this through DHD construction and optimized junction design, with performance validated in Figure 10 of the official datasheet.

What package type does RD5.1ES-T4 use, and what are its key mechanical dimensions?

RD5.1ES-T4 uses the DO-34 (JEDEC) glass-sealed axial package: body diameter φ2.0 mm MAX, body length 2.4 mm MAX, lead spacing 5 mm, and black cathode band marking. These dimensions are standardized in the Package Dimensions diagram of Renesas datasheet D13935EJ7V0DS and ensure compatibility with automated insertion equipment and 5 mm pitch PCB layouts.

What is the maximum reverse current (IR) specification for RD5.1ES-T4, and at what voltage is it measured?

The RD5.1ES-T4 specifies a maximum reverse current (IR) of 5 µA at VR = 0.5 V below the nominal zener voltage - i.e., at 4.6 V. This value is listed in the Electrical Characteristics table for all RD5.1ES variants (AB1/AB2/AB3) and reflects low leakage critical for battery-powered and high-impedance reference applications. The RD5.1ES-T4 meets this spec at TA = 25°C.

Is RD5.1ES-T4 suitable for automotive applications, and what quality grade does it carry?

RD5.1ES-T4 is classified as "Standard" quality grade per Renesas documentation, intended for computers, office equipment, communications gear, and industrial robots - not for automotive or safety-critical systems. It is not qualified to AEC-Q101 or automotive temperature ranges. For automotive use, engineers must select Renesas' explicitly qualified "High Quality" parts, as RD5.1ES-T4 lacks the required qualification evidence and extended temperature validation.