Renesas RD5.6M(0)-T1B-A

Overview

RD5.6M(0)-T1B-A from Renesas Electronics is a 200 mW, 3-pin mini-mold planar zener diode with nominal zener voltage 5.6 V (±5% tolerance, Class B3), dynamic impedance ≤80 Ω at 5 mA, and maximum reverse current 5 μA at 2.5 V. It serves as a precision voltage reference or surge absorber in low-power analog signal conditioning and power rail stabilization circuits.

For engineers reviewing the RD5.6M(0)-T1B-A datasheet, RD5.6M(0)-T1B-A pinout, RD5.6M(0)-T1B-A application, or RD5.6M(0)-T1B-A equivalent, key selection criteria include its 5.67–5.92 V zener range, SC-59 package compatibility, 150°C junction temperature rating, and suitability for constant-voltage regulation in consumer-grade embedded systems.

Technical Context

This device operates in reverse-bias breakdown mode to maintain stable voltage across its cathode-anode terminals under varying load or line conditions. Its planar construction ensures consistent V_Z tolerance and thermal stability, with temperature coefficient γ_Z near zero at ~5.6 V - confirmed by typical characteristics curves in the datasheet.

Designed for DC voltage regulation and transient suppression, RD5.6M(0)-T1B-A supports pulsed operation up to 100 W (10 μs pulse width) and exhibits predictable dynamic impedance behavior below 5 mA test current, enabling accurate modeling in feedback networks and clamp circuits.

Key Specifications

Pinout & Package

RD5.6M(0)-T1B-A uses the SC-59 (JEITA) 3-pin mini-mold package: Pin 1 is NC (no connection), Pin 2 is Anode (A), Pin 3 is Cathode (K). The package measures 2.9 ± 0.2 mm × 1.5 mm × 0.95 mm with 0.65 mm lead pitch and gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Compared with MMBZ5232BS-7-F and BZX84-C5V6, RD5.6M(0)-T1B-A offers optimized trade-offs for SC-59-restricted layouts, zero-TC operation near 5.6 V, and guaranteed 5 μA IR at 2.5 V - making it preferred for low-power, temperature-sensitive voltage references where pinout and thermal profile match legacy Renesas designs.

Availability

RD5.6M(0)-T1B-A is available at Aetrix Electronics and suitable for USB interface protection, microcontroller reset generation, low-power sensor biasing, and audio signal limiting requiring stable component supply and long-term obsolescence management.

Supply support for RD5.6M(0)-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.

The RD2.0M to RD47M series was designed specifically for cost-sensitive, space-constrained voltage regulation and transient suppression in Standard-grade applications such as office equipment, home appliances, and industrial robots.

FAQ

What is the exact zener voltage range specified for RD5.6M(0)-T1B-A at 5 mA test current?

The RD5.6M(0)-T1B-A has a guaranteed zener voltage range of 5.67 V to 5.92 V when measured at I_Z = 5 mA and T_A = 25°C, per Class B3 specification in the Renesas D14716EJ7V0DS datasheet. This 4.3% tolerance window reflects tight process control for stable voltage reference use, and the RD5.6M(0)-T1B-A achieves near-zero temperature coefficient within this band.

Does RD5.6M(0)-T1B-A have a no-connect pin, and how must it be handled on PCB layout?

Yes, RD5.6M(0)-T1B-A has Pin 1 designated as NC (no connection), electrically isolated from internal die. On PCB layout, Pin 1 must remain unconnected - neither routed nor soldered to any net or plane. The RD5.6M(0)-T1B-A datasheet explicitly prohibits tying Pin 1 to ground or other potentials, as doing so may compromise reliability or cause parametric shift due to parasitic coupling.

What is the maximum allowable reverse current for RD5.6M(0)-T1B-A at 2.5 V, and why is this parameter critical?

The RD5.6M(0)-T1B-A specifies maximum reverse current I_R ≤ 5 μA at V_R = 2.5 V and T_A = 25°C. This low leakage is critical in high-impedance bias networks (e.g., reset supervisors or sensor bridges), where even 1 μA error current introduces measurable offset. The RD5.6M(0)-T1B-A's 5 μA limit ensures sub-1 mV error in 500 kΩ divider arms, preserving accuracy in battery-operated systems.

Can RD5.6M(0)-T1B-A be used in place of a 5.1 V zener diode like RD5.1M in the same circuit?

No - RD5.6M(0)-T1B-A is not a drop-in replacement for RD5.1M due to its higher nominal zener voltage (5.67–5.92 V vs. 5.14–5.37 V) and distinct dynamic impedance (≤80 Ω vs. ≤130 Ω at 5 mA). Substituting RD5.6M(0)-T1B-A would raise regulated voltage by ~0.5 V, potentially exceeding downstream IC absolute maximum ratings. The RD5.6M(0)-T1B-A must be selected only where its specific 5.6 V regulation point is required.

What is the peak surge power rating of RD5.6M(0)-T1B-A, and under what conditions is it valid?

The RD5.6M(0)-T1B-A supports peak reverse surge power P_RSM = 100 W for pulse width t_T = 10 μs at T_A = 25°C, per the datasheet's Fig. 6. This rating applies only to single, non-repetitive transients - repetitive surges require derating based on thermal impedance curves (Fig. 5). The RD5.6M(0)-T1B-A leverages its planar structure to absorb short ESD pulses without degradation, but sustained overvoltage will exceed its 200 mW steady-state limit.