Renesas RD6.2F-T8-AZ

Overview

RD6.2F-T8-AZ from Renesas Electronics is a 1 W planar-type silicon Zener diode with nominal zener voltage 6.2 V, dynamic impedance ≤6 Ω at 40 mA, and temperature coefficient +2.0 mV/°C. It features DO-41 glass-sealed DHD (Double Heatsink Diode) packaging and is rated for surge reverse power of 400 W (t = 10 μs), commonly used in voltage regulation and overvoltage protection circuits for industrial power supplies.

For engineers reviewing the RD6.2F-T8-AZ datasheet, RD6.2F-T8-AZ pinout, RD6.2F-T8-AZ application, or RD6.2F-T8-AZ equivalent, key selection criteria include zener voltage tolerance (±5.5% at 40 mA), low dynamic impedance for stable regulation, thermal resistance characteristics under PCB copper area variation, and compatibility with standard through-hole wave-soldering processes.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its zener voltage is specified at test current I_Z = 40 mA, with guaranteed minimum/maximum limits of 6.17 V and 6.52 V respectively. The positive temperature coefficient (+2.0 mV/°C typical) indicates increasing V_Z with rising junction temperature.

The DO-41 package provides mechanical robustness and thermal path capability dependent on PCB copper area - thermal resistance drops from 240 °C/W (S = 5 mm²) to 120 °C/W (S = 20 mm²). Surge rating of 400 W at 10 μs enables transient suppression in low-energy clamping applications without external series limiting.

Key Specifications

Pinout & Package

RD6.2F-T8-AZ uses the JEDEC-standard DO-41 axial-leaded glass package with cathode indicated by a black band. Lead spacing is 25 mm min., body diameter 3.0 mm max., and overall length 5 mm max. Thermal performance depends on PCB copper foil area (S = 5–20 mm²).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Compared with 1N4735A and BZX55C6V2, RD6.2F-T8-AZ offers confirmed +2.0 mV/°C temperature coefficient for thermal drift compensation and DO-41 packaging optimized for industrial wave-soldering yield - critical for high-reliability embedded control applications requiring long-term parametric stability.

Availability

RD6.2F-T8-AZ is available at Aetrix Electronics and suitable for industrial power supplies, sensor interface protection circuits, and analog signal conditioning modules requiring stable component supply and long-lifecycle support.

Supply support for RD6.2F-T8-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and advanced SoCs for industrial, automotive, and infrastructure markets.

RD6.2F-T8-AZ belongs to the RD2.0F–RD82F family of 1 W planar zener diodes designed specifically for voltage reference, regulation, and transient suppression in industrial control and power conversion equipment.

FAQ

What is the zener voltage tolerance of RD6.2F-T8-AZ at 40 mA test current?

The RD6.2F-T8-AZ has a zener voltage range of 6.17 V to 6.52 V at I_Z = 40 mA, corresponding to ±5.5% tolerance about the nominal 6.2 V rating. This specification is verified per Renesas datasheet D13936EJ5V0DS and applies to the B grade variant explicitly listed for RD6.2F. The tolerance remains valid across the full operating temperature range when used within absolute maximum ratings.

Does RD6.2F-T8-AZ have a documented temperature coefficient, and what is its value?

Yes, RD6.2F-T8-AZ has a documented zener voltage temperature coefficient of +2.0 mV/°C (typical), as stated in the Electrical Characteristics table of Renesas datasheet D13936EJ5V0DS. This positive coefficient means the zener voltage increases linearly with junction temperature, enabling predictable drift compensation in precision analog circuits where thermal gradients exist.

What package type does RD6.2F-T8-AZ use, and how is polarity marked?

RD6.2F-T8-AZ uses the JEDEC-standard DO-41 axial-leaded glass package. Polarity is marked by a black cathode band located near one end of the cylindrical body. The cathode terminal must be connected to the higher-potential node in reverse-bias regulation or clamping configurations, while the unmarked end is the anode.

Can RD6.2F-T8-AZ be used for surge protection, and what is its rated surge power?

Yes, RD6.2F-T8-AZ is rated for surge reverse power of 400 W at pulse width t = 10 μs, as specified in the Absolute Maximum Ratings table. This capability enables single-event transient suppression in low-energy interfaces such as sensor lines or logic-level inputs, provided series impedance limits peak current to avoid exceeding the device's surge energy limit.

Is RD6.2F-T8-AZ compliant with RoHS and lead-free soldering requirements?

RD6.2F-T8-AZ complies with EU RoHS Directive requirements, as confirmed by Renesas Electronics' environmental compliance documentation. It supports lead-free reflow and wave soldering processes, with maximum peak temperature ratings aligned to industry-standard J-STD-020 profiles. No exemptions apply, and the device contains no restricted substances above threshold limits.