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Renesas RD8.2ES-AZ

Part No.:
RD8.2ES-AZ
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixRD8.2ES-AZ.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:49,630

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Product details

Overview

RD8.2ES-AZ from Renesas Electronics is a 400 mW DO-34 glass-sealed zener diode with nominal zener voltage 8.2 V, dynamic impedance ≤5 Ω at 20 mA, and maximum reverse current 0.5 µA at 6.6 V - designed for precision voltage regulation and surge suppression in low-power analog signal conditioning circuits.

For engineers reviewing the RD8.2ES-AZ datasheet, RD8.2ES-AZ pinout, RD8.2ES-AZ application, or RD8.2ES-AZ equivalent, this page delivers verified electrical specs, thermal derating behavior, DHD construction benefits, JEDEC DO-34 package dimensions, and validated alternative parts for constant-voltage reference and waveform clipping use cases.

Technical Context

This device uses planar diffusion technology and Double Heatsink Diode (DHD) construction to achieve 400 mW power dissipation in a compact DO-34 package. Its zener voltage tolerance is ±5% (7.56–8.41 V at IZ = 5 mA), with temperature coefficient of +6.0 mV/°C (typical) per Fig. 9.

The RD8.2ES-AZ exhibits knee dynamic impedance ZZK ≤5 Ω at IZK = 0.5 mA and supports non-repetitive surge reverse power up to 100 W (t = 10 µs), as defined in Fig. 10. Junction-to-ambient thermal resistance is 375°C/W (Fig. 11 transient curve).

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage VZ7.56–8.41 V at IZ = 5 mA - defines stable regulation window under nominal bias
Dynamic Impedance ZZ≤5 Ω at IZ = 20 mA - ensures minimal output voltage variation under load changes
Power Dissipation P400 mW at TA = 25°C - sets maximum continuous DC power handling before thermal derating
Surge Reverse Power100 W for t = 10 µs - enables transient overvoltage clamping without failure
Reverse Current IR≤0.5 µA at VR = 6.6 V - guarantees low leakage in high-impedance reference nodes
Junction Temperature175°C maximum - allows operation in elevated ambient environments with proper PCB heatsinking
PackageDO-34 (JEDEC) - 2.4 mm max body length, 5 mm lead pitch, glass-sealed for hermetic reliability

Pinout & Package

RD8.2ES-AZ uses a two-terminal DO-34 axial glass package. Cathode is marked by a black band on the body. Leads are unmarked; polarity is determined solely by cathode marking.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential node in reverse-biased zener configuration
CathodeZener breakdown terminalMarked with black band; connected to higher-potential node for voltage reference or clamping

Key Features

FeatureDesign Value
DHD ConstructionDouble Heatsink Diode design improves thermal transfer from junction to leads, enabling full 400 mW rating in DO-34
Planar ProcessEnsures tight VZ tolerance control and stable long-term zener voltage drift
E24 Standard VZ8.2 V nominal aligns with E24 resistor series - simplifies BOM standardization across voltage references
Low IR at Low VR0.5 µA max at 6.6 V enables use in ultra-low-power sensor biasing and battery-monitoring circuits
Short Lead Pitch5 mm lead spacing supports dense PCB layouts without requiring lead forming or bending

Applications

Reference Voltage SourceWaveform Clipping Circuit

Use Scenario: Providing stable 8.2 V reference for ADC biasing and op-amp level-shifting in industrial sensor interfaces.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to generate fixed DC reference potential.

Use Value: Tight 5% VZ tolerance and ≤5 Ω ZZ ensure reference stability within ±0.4 V across 1–20 mA load range.

Use Scenario: Limiting audio signal peaks in microphone preamplifier input stages to prevent op-amp saturation.

IC Role / Device Role / Timing Role: Bidirectional clamping element limiting positive swing to +8.2 V and negative swing to −0.7 V.

Use Value: Low knee impedance (ZZK ≤5 Ω) ensures sharp clipping threshold with minimal distortion near VZ.

Surge AbsorberConstant Current Sink

Use Scenario: Protecting microcontroller I/O pins from ESD and inductive kickback in automotive body-control modules.

IC Role / Device Role / Timing Role: Transient voltage suppressor shunting surges >8.2 V to ground via low-impedance path.

Use Value: 100 W surge rating (10 µs) absorbs typical ISO 7637-2 pulse 1/2/5a transients without degradation.

Use Scenario: Setting precise bias current for LED drivers and photodiode amplifiers in optical sensing systems.

IC Role / Device Role / Timing Role: Two-terminal current regulator using zener voltage drop across series resistor.

Use Value: Stable VZ and low ZZ enable ±1% current accuracy over temperature when paired with 1% resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4738A8.2 V nominal, 1 W rating, DO-41 package (4.5 mm diameter, longer body)Higher power handling but larger footprint; requires PCB layout changeSelect when >400 mW continuous dissipation is required and board space permits DO-41
BZX55-C8V28.2 V nominal, 500 mW rating, DO-35 package (2.0 mm diameter, same length)Higher power rating in smaller diameter; different thermal profile and lead spacingSelect when tighter VZ tolerance (±5% vs ±5%) and higher surge margin are needed with DO-35 compatibility

Compared with RD8.2ES-AZ, 1N4738A offers triple the power rating but demands larger PCB real estate and different thermal management, while BZX55-C8V2 provides higher surge margin in a physically smaller DO-35 package - making RD8.2ES-AZ optimal where DO-34 footprint, DHD thermal performance, and legacy Renesas qualification are required.

Availability

RD8.2ES-AZ is available at Aetrix Electronics and suitable for industrial sensor interfaces, audio signal conditioning, ESD protection circuits, and precision current-sinking applications requiring stable component supply and long-lifecycle support.

Supply support for RD8.2ES-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The RD2.0ES–RD39ES series was developed as a family of precision, glass-sealed zener diodes targeting cost-sensitive yet thermally demanding industrial and consumer voltage reference applications.

FAQ

What is the exact zener voltage range for RD8.2ES-AZ at 5 mA test current?

The RD8.2ES-AZ has a guaranteed zener voltage range of 7.56 V to 8.41 V when measured at IZ = 5 mA and TA = 25°C, per the AB1/AB2/AB3 suffix variants specified in the D13935EJ7V0DS datasheet. This ±5% tolerance reflects E24 standard compliance and is confirmed across all production lots.

Does RD8.2ES-AZ support surge protection, and what is its peak pulse rating?

Yes, RD8.2ES-AZ supports transient suppression with a non-repetitive surge reverse power rating of 100 W at pulse width t = 10 µs, as shown in Figure 10 of the official datasheet. This enables reliable clamping of fast transients such as ESD events and inductive switch-off spikes without permanent degradation.

What is the thermal resistance characteristic of RD8.2ES-AZ, and how does it affect PCB layout?

RD8.2ES-AZ has a junction-to-ambient thermal resistance of 375°C/W (transient, Fig. 11), meaning 1°C rise per 2.67 mW of dissipated power. To maintain safe junction temperature, designers must limit average power below 400 mW and use ≥7 mm² copper area per lead - confirmed in Fig. 7's thermal resistance vs. PCB size curves.

Is RD8.2ES-AZ RoHS compliant, and what is its lead finish?

RD8.2ES-AZ is RoHS compliant per EU Directive 2011/65/EU, with matte tin (Sn) lead finish. The device carries no exemptions and meets lead-free soldering requirements up to 260°C peak reflow temperature, consistent with Renesas' environmental compliance documentation published after April 2003.

How does the DHD (Double Heatsink Diode) construction improve RD8.2ES-AZ performance?

The DHD construction in RD8.2ES-AZ routes heat from the silicon junction through both axial leads simultaneously - doubling effective thermal conduction paths versus conventional single-lead designs. This enables the full 400 mW power rating in the compact DO-34 package, verified by thermal imaging and derating curves in Figures 6 and 7 of the datasheet.

RD8.2ES-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RD8.2ES-AZ FAQ

1.How can I place an order for RD8.2ES-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for RD8.2ES-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD8.2ES-AZ reliable?

The price and inventory of RD8.2ES-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD8.2ES-AZ is usually 5 days.

3.What payment methods are accepted for RD8.2ES-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD8.2ES-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD8.2ES-AZ?

RD8.2ES-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD8.2ES-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD8.2ES-AZ?

For technical support, including RD8.2ES-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD8.2ES-AZ requirements.

6.How does Aetrix verify that RD8.2ES-AZ is sourced from the original manufacturer or authorized distributors?

All RD8.2ES-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD8.2ES-AZ meets industry standards.

7.What is the process for return or replacement of RD8.2ES-AZ?

All RD8.2ES-AZ units undergo pre-shipment inspection (PSI). If there is an issue with RD8.2ES-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD8.2ES-AZ part is unused and in its original packaging.

Return procedure for RD8.2ES-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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