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Renesas RD8.2F(N)-T6

Part No.:
RD8.2F(N)-T6
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixRD8.2F(N)-T6.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:52,500

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Product details

Overview

RD8.2F(N)-T6 from Renesas Electronics is a 1 W planar-type silicon Zener diode in DO-41 glass-sealed DHD package, with nominal zener voltage 8.2 V (B3 grade: 8.12–8.54 V), dynamic impedance ≤4 Ω at 40 mA, and temperature coefficient +4.5 mV/°C. It serves as a precision voltage reference and overvoltage clamp in power supply regulation circuits.

For engineers reviewing the RD8.2F(N)-T6 datasheet, RD8.2F(N)-T6 pinout, RD8.2F(N)-T6 application, or RD8.2F(N)-T6 equivalent, this page delivers verified electrical specs, thermal derating curves, surge handling capability (400 W @ 10 μs), and direct alternative options for voltage reference and transient suppression design.

Technical Context

The RD8.2F(N)-T6 operates as a reverse-biased breakdown device with tightly controlled zener voltage tolerance (±2.7% for B3 grade) and low dynamic impedance (4 Ω max at IZ = 40 mA), enabling stable regulation under varying load conditions. Its planar junction structure ensures consistent breakdown characteristics and long-term stability.

Thermal performance is defined by a 175°C maximum junction temperature and transient thermal impedance of ~150°C/W at 10 ms, supporting reliable operation in ambient temperatures up to 150°C when mounted on ≥20 mm² copper foil. Surge reverse power rating is 400 W for 10 μs pulses.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)8.12–8.54 V (B3 grade, tested at 40 ms after power-on; enables precise 8.2 V reference with ±2.7% tolerance)
Power Dissipation (P)1.0 W at TA = 25°C; derates linearly to zero at 175°C ambient (supports compact PCB layouts with minimal heatsinking)
Dynamic Impedance (ZZ)≤4 Ω at IZ = 40 mA (ensures minimal output voltage variation under dynamic load changes)
Zener Temperature Coefficient (γZ)+4.5 mV/°C (positive TC allows predictable drift compensation in temperature-stable references)
Surge Reverse Power (PRSM)400 W for t = 10 μs (absorbs short-duration transients without failure in input protection circuits)
Reverse Current (IR)≤20 μA at VR = 6.0 V (low leakage preserves efficiency in high-impedance bias networks)
Junction Temperature (Tj)−65 to +175°C (enables deployment in industrial and automotive under-hood environments)

Pinout & Package

RD8.2F(N)-T6 uses a DO-41 glass-sealed axial package with cathode indicated by a black band. The device has two terminals: anode and cathode - no internal circuitry or additional pins.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential node in reverse-bias configuration; carries forward current up to 200 mA
CathodeZener breakdown terminalMarked with black band; connected to higher-potential node during regulation; sustains 8.2 V reverse breakdown

Key Features

FeatureDesign Value
1 W Planar Zener StructureEnables stable, repeatable breakdown voltage with low long-term drift and high reliability in continuous regulation
E24 Voltage Series ComplianceSupports standardized BOM management across 2–82 V range without custom voltage binning
DO-41 Glass-Sealed DHD PackageProvides mechanical robustness, hermetic sealing, and dual heatsink paths for improved thermal dissipation
B3 Voltage Grade OptionDelivers tight 8.12–8.54 V tolerance (±2.7%) for applications requiring higher initial accuracy than standard B grade
Positive Temperature Coefficient+4.5 mV/°C enables predictable, monotonic voltage shift - simplifies temperature-compensated reference design

Applications

Power Supply Voltage ReferenceOvervoltage Clamp Circuit

Use Scenario: Stabilizing feedback node in adjustable linear regulators (e.g., LM317-based supplies) or providing reference for ADC biasing.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to maintain fixed 8.2 V at the reference node.

Use Value: Delivers <±2.7% initial tolerance and <4 Ω dynamic impedance, minimizing output voltage error across line/load variations.

Use Scenario: Protecting downstream IC inputs (e.g., microcontroller GPIO or op-amp rails) from ESD or inductive switching spikes.

IC Role / Device Role / Timing Role: Shunt clamping device that conducts above 8.54 V to divert surge energy to ground.

Use Value: Withstands 400 W transient surges (10 μs) while limiting clamped voltage to ≤9.0 V - sufficient headroom for 5 V or 3.3 V logic protection.

Waveform LimiterSurge Absorption in DC Input Stage

Use Scenario: Constraining AC signal amplitude in analog front-ends (e.g., audio preamps or sensor signal conditioning).

IC Role / Device Role / Timing Role: Bidirectional clipping element used in back-to-back configuration with another diode.

Use Value: Sharp 8.2 V knee and low ZZ ensure clean, repeatable clipping threshold with minimal distortion at signal frequencies ≤1 MHz.

Use Scenario: Suppressing load-dump transients (e.g., ISO 7637-2 Pulse 5a) on 12 V automotive subsystem rails.

IC Role / Device Role / Timing Role: Primary shunt protector placed across input capacitor before DC/DC converter stage.

Use Value: Rated for 175°C junction temperature and validated for 400 W/10 μs surges - meets industrial-grade surge immunity requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4738ASame 8.2 V nominal, but ±5% tolerance (vs. RD8.2F(N)-T6 B3's ±2.7%), higher ZZ (5 Ω vs. 4 Ω), DO-41 packageAcceptable where tighter initial accuracy is not required; less suitable for precision reference designsSelect 1N4738A only if cost sensitivity outweighs need for low-impedance regulation and tight voltage binning.
BZX84-C8V2SOT-23 surface-mount, 8.2 V ±5%, ZZ ≤10 Ω at 5 mA, 350 mW rating (vs. 1 W)Designed for space-constrained PCBs; unsuitable for >350 mW continuous dissipation or high-energy transientsChoose BZX84-C8V2 only for low-power, high-density layouts where thermal and surge performance are secondary.

Compared with 1N4738A and BZX84-C8V2, RD8.2F(N)-T6 offers superior voltage accuracy, lower dynamic impedance, and 2.8× higher surge power handling - making it the preferred choice for industrial power rail stabilization and ruggedized transient suppression.

Availability

RD8.2F(N)-T6 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, and test equipment requiring stable component supply with full traceability and long-lifecycle support.

Supply support for RD8.2F(N)-T6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

RD8.2F(N)-T6 belongs to the RD2.0F–RD82F planar Zener diode family, engineered for high-reliability voltage regulation and transient suppression in standard-grade applications including office equipment, industrial controls, and consumer electronics.

FAQ

What is the exact zener voltage tolerance for RD8.2F(N)-T6?

The RD8.2F(N)-T6 is offered in B3 grade, with a guaranteed zener voltage range of 8.12 V to 8.54 V at IZ = 40 mA and TA = 25°C - corresponding to ±2.7% tolerance around the nominal 8.2 V value. This tighter binning is confirmed in Renesas datasheet D13936EJ5V0DS, page 3.

Does RD8.2F(N)-T6 support high-temperature operation?

Yes, RD8.2F(N)-T6 is rated for junction temperatures from −65°C to +175°C and ambient operation up to 150°C with appropriate PCB copper area (≥20 mm²). Its thermal resistance profile and derating curve (Figure 1, D13936EJ5V0DS) confirm stable performance in industrial and under-hood automotive environments.

What is the maximum surge power RD8.2F(N)-T6 can handle?

RD8.2F(N)-T6 supports a surge reverse power of 400 W for pulse width t = 10 μs, as specified in the Absolute Maximum Ratings table (page 2, D13936EJ5V0DS). This rating applies under non-repetitive conditions and is validated per Figure 7 in the same datasheet.

Is RD8.2F(N)-T6 RoHS compliant?

Yes, RD8.2F(N)-T6 complies with the EU RoHS Directive. Renesas confirms environmental compliance for this product family in its general product notices, and the DO-41 package contains no lead exemptions beyond RoHS thresholds. Full material declarations are available via Renesas' compliance portal.

Can RD8.2F(N)-T6 replace 1N4738A in existing designs?

RD8.2F(N)-T6 is a functional upgrade to 1N4738A - sharing DO-41 package, 8.2 V nominal voltage, and axial mounting - but offers tighter B3-grade tolerance (±2.7% vs. ±5%), lower dynamic impedance (4 Ω vs. 5 Ω), and higher surge rating (400 W vs. 250 W). No PCB changes are needed for drop-in replacement where enhanced accuracy and ruggedness are beneficial.

RD8.2F(N)-T6 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

RD8.2F(N)-T6 FAQ

1.How can I place an order for RD8.2F(N)-T6 through Aetrix?

Please submit a Request for Quotation (RFQ) for RD8.2F(N)-T6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RD8.2F(N)-T6 reliable?

The price and inventory of RD8.2F(N)-T6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD8.2F(N)-T6 is usually 5 days.

3.What payment methods are accepted for RD8.2F(N)-T6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD8.2F(N)-T6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RD8.2F(N)-T6?

RD8.2F(N)-T6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RD8.2F(N)-T6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RD8.2F(N)-T6?

For technical support, including RD8.2F(N)-T6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD8.2F(N)-T6 requirements.

6.How does Aetrix verify that RD8.2F(N)-T6 is sourced from the original manufacturer or authorized distributors?

All RD8.2F(N)-T6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD8.2F(N)-T6 meets industry standards.

7.What is the process for return or replacement of RD8.2F(N)-T6?

All RD8.2F(N)-T6 units undergo pre-shipment inspection (PSI). If there is an issue with RD8.2F(N)-T6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RD8.2F(N)-T6 part is unused and in its original packaging.

Return procedure for RD8.2F(N)-T6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RD8.2F(N)-T6 Tags

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