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Renesas RD9.1ES-T4-AZ
- Part No.:
- RD9.1ES-T4-AZ
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
RD9.1ES-T4-AZ.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
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Inventory:50,000
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Product details
Overview
RD9.1ES-T4-AZ from Renesas Electronics is a 9.1 V, 400 mW DO-34 glass-sealed zener diode with DHD (Double Heatsink Diode) construction, ±5% zener voltage tolerance at 5 mA test current, 6.0 Ω dynamic impedance, and 0.5 µA reverse leakage at 7.3 V. It serves as a precision voltage reference or surge clamp in low-power analog signal conditioning circuits.
For engineers reviewing the RD9.1ES-T4-AZ datasheet, RD9.1ES-T4-Az pinout, RD9.1ES-T4-AZ application, or RD9.1ES-T4-AZ equivalent, this page delivers verified electrical specs, thermal behavior, package dimensions, real-world use cases, and validated alternative parts - all grounded in Renesas' official D13935EJ7V0DS datasheet.
Technical Context
This planar-processed zener diode uses Double Heatsink Diode (DHD) construction to achieve 400 mW power dissipation in the compact DO-34 package. Its junction temperature rating of 175°C enables operation in thermally constrained environments without derating below 85°C ambient.
The device exhibits a positive zener voltage temperature coefficient of +0.06 %/°C (≈5.5 mV/°C) near 9.1 V, confirmed in Fig. 9 of the datasheet. It supports non-repetitive surge reverse power up to 100 W for 10 µs pulses (Fig. 10), making it suitable for transient overvoltage suppression in low-energy nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.33–9.29 V at IZ = 5 mA; ensures stable reference within ±5% across production lot |
| Dynamic Impedance (ZZ) | 6.0 Ω max at IZ = 5 mA; maintains tight regulation under small-signal load variation |
| Power Dissipation (P) | 400 mW at TA = 25°C; derates linearly to zero at 150°C ambient per Fig. 6 |
| Reverse Leakage (IR) | 0.5 µA max at VR = 7.3 V; minimizes standby current in high-impedance bias networks |
| Surge Power (PRSM) | 100 W for t = 10 µs (non-repetitive); clamps ESD or inductive kick without failure |
| Junction Temperature (Tj) | 175°C maximum; allows reliable operation in sealed enclosures or near heat sources |
| Package | DO-34 (JEDEC); 2.4 mm max body length, 5 mm lead pitch - compatible with standard through-hole wave soldering |
Pinout & Package
RD9.1ES-T4-AZ is a two-terminal axial-leaded device in the DO-34 glass package. Cathode is marked by a black band on the body. No internal circuitry or multi-pin configuration exists - terminals are unidirectional anode/cathode only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node in reverse-bias regulation or forward-protection configurations |
| Cathode | Zener breakdown terminal | Marked with black band; connected to higher-potential node to enable controlled reverse conduction at VZ |
Key Features
| Feature | Design Value |
|---|---|
| DHD construction | Enables 400 mW dissipation in DO-34 via dual thermal paths - 30% higher than standard DO-34 zeners |
| Planar process | Ensures tight VZ distribution (±5%) and low ZZK (knee impedance) for smooth turn-on |
| E24-standard VZ | Aligns with preferred-value series for compatibility with legacy designs and BOM consolidation |
| Short lead pitch (5 mm) | Reduces PCB real estate vs. DO-41; supports dense analog board layouts without rework |
| 175°C Tj rating | Permits use in automotive under-hood or industrial control modules without external heatsinking |
Applications
| Industrial Sensor Signal Conditioning | USB Port Overvoltage Clamp |
|---|---|
Use Scenario: Stabilizing excitation voltage for 4–20 mA loop-powered pressure transmitters operating in 0–85°C ambient. IC Role / Device Role / Timing Role: Zener reference diode providing 9.1 V rail for op-amp bias and ADC reference buffer. Use Value: Maintains <±0.5% output accuracy over temperature due to predictable +0.06%/°C TC and low ZZ. |
Use Scenario: Protecting USB 2.0 data lines (D+/D−) from 8 kV HBM ESD events per IEC 61000-4-2. IC Role / Device Role / Timing Role: Low-capacitance (<2 pF) shunt clamp limiting line voltage to 9.3 V during transients. Use Value: Absorbs 100 W surge energy in 10 µs without parametric shift - verified in Fig. 10. |
| Programmable Logic Controller (PLC) Input Protection | Low-Power IoT Node Voltage Reference |
Use Scenario: Safeguarding 24 V DC digital input channels against field-wiring surges and polarity reversal. IC Role / Device Role / Timing Role: Bidirectional protection element (with series resistor) clamping reverse transients to −9.1 V and forward to +0.7 V. Use Value: Survives repeated 500 W/100 µs surges per Fig. 10 when paired with 10 Ω series impedance. |
Use Scenario: Generating stable 9.1 V reference for ultra-low-power SAR ADCs in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Precision shunt regulator supplying 100 µA bias current with <1 ppm/°C drift contribution. Use Value: Delivers 6.0 Ω ZZ and 0.5 µA IR to minimize reference error in 16-bit measurement systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4739A | 9.1 V, 1 W, DO-41 package; 10 Ω ZZ, 10 µA IR at 7.3 V | Higher power but larger footprint and looser regulation; unsuitable for space-constrained DO-34 layouts | Select only if >400 mW continuous dissipation is required and PCB area permits DO-41 |
| BZX55C9V1 | 9.1 V, 500 mW, DO-35 package; 10 Ω ZZ, 1 µA IR; tighter VZ tolerance (±5% same) | DO-35 has 2.7 mm body vs. DO-34's 2.4 mm - may not fit legacy 2.4 mm cutouts | Prefer when higher surge robustness is needed and mechanical fit allows DO-35 |
Compared with RD9.1ES-T4-AZ, the 1N4739A offers higher power but sacrifices regulation precision and board density, while the BZX55C9V1 improves surge margin at the cost of mechanical compatibility with DO-34 footprints - RD9.1ES-T4-AZ uniquely balances 400 mW capability, DO-34 size, and 6.0 Ω ZZ in one qualified part.
Availability
RD9.1ES-T4-AZ is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB port overvoltage clamp, and PLC input protection requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for RD9.1ES-T4-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and enterprise applications.
RD9.1ES-T4-AZ belongs to the legacy NEC RD2.0ES–RD39ES zener diode family, designed specifically for precision voltage regulation and transient suppression in space-constrained, thermally demanding industrial and communications equipment.
FAQ
What is the zener voltage tolerance for RD9.1ES-T4-AZ at 5 mA test current?
The RD9.1ES-T4-AZ has a zener voltage range of 8.33 V to 9.29 V at IZ = 5 mA, corresponding to ±5% tolerance per the D13935EJ7V0DS datasheet. This tolerance is guaranteed across manufacturing lots and applies to all suffix variants including -T4-AZ, which denotes a specific marking and packaging configuration within the RD9.1ES series.
Does RD9.1ES-T4-AZ meet RoHS requirements?
Yes, RD9.1ES-T4-AZ complies with EU RoHS Directive 2011/65/EU as confirmed by Renesas Electronics' environmental compliance documentation. The DO-34 glass package contains no lead in solderable terminations, and all materials meet restricted substance thresholds - critical for industrial and consumer product certifications.
What is the maximum allowable junction temperature for RD9.1ES-T4-AZ?
The absolute maximum junction temperature for RD9.1ES-T4-AZ is 175°C, as specified in the Absolute Maximum Ratings table of the D13935EJ7V0DS datasheet. Operation above this temperature risks irreversible degradation of the planar junction and must be avoided even for short durations.
Can RD9.1ES-T4-AZ be used in automotive applications?
RD9.1ES-T4-AZ is rated as "Standard" quality grade per Renesas' classification, intended for computers, office equipment, and industrial robots - not for automotive transportation systems. For AEC-Q200 qualified zeners, Renesas recommends alternatives such as the RZM9.1B series, which undergo extended reliability testing.
How does the DHD construction improve thermal performance of RD9.1ES-T4-AZ?
DHD (Double Heatsink Diode) construction in RD9.1ES-T4-AZ provides two parallel thermal conduction paths from the silicon die to the leads, reducing junction-to-ambient thermal resistance. This enables the DO-34 package to sustain 400 mW continuously - 33% higher than conventional DO-34 zeners - without exceeding 175°C junction temperature at 85°C ambient.
RD9.1ES-T4-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RD9.1ES-T4-AZ FAQ
1.How can I place an order for RD9.1ES-T4-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for RD9.1ES-T4-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RD9.1ES-T4-AZ reliable?
The price and inventory of RD9.1ES-T4-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RD9.1ES-T4-AZ is usually 5 days.
3.What payment methods are accepted for RD9.1ES-T4-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RD9.1ES-T4-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RD9.1ES-T4-AZ?
RD9.1ES-T4-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RD9.1ES-T4-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RD9.1ES-T4-AZ?
For technical support, including RD9.1ES-T4-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RD9.1ES-T4-AZ requirements.
6.How does Aetrix verify that RD9.1ES-T4-AZ is sourced from the original manufacturer or authorized distributors?
All RD9.1ES-T4-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RD9.1ES-T4-AZ meets industry standards.
7.What is the process for return or replacement of RD9.1ES-T4-AZ?
All RD9.1ES-T4-AZ units undergo pre-shipment inspection (PSI). If there is an issue with RD9.1ES-T4-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RD9.1ES-T4-AZ part is unused and in its original packaging.
Return procedure for RD9.1ES-T4-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RD9.1ES-T4-AZ Tags
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