STMicroelectronics RF2L16180CB4

Overview

RF2L16180CB4 from STMicroelectronics is a 180 W, 28 V internally matched LDMOS RF power transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station amplifiers and ISM applications in the 1.3–1.6 GHz band. It features dual-gate/dual-drain topology, 14 dB small-signal gain, 60% drain efficiency at 1450 MHz in Doherty configuration, and ±6 V to +10 V gate-source voltage range for robust Class C operation.

For engineers reviewing the RF2L16180CB4 datasheet, RF2L16180CB4 pinout, RF2L16180CB4 application, or RF2L16180CB4 equivalent, key selection criteria include its Doherty-optimized matching, 0.38 °C/W junction-to-case thermal resistance, ESD protection (HBM Class 1C, CDM Class C3), and B4E package compatibility with high-power RF PCB layouts.

Technical Context

This device is a dual-side LDMOS transistor with independent Gate A/Gate B and Drain A/Drain B terminals, enabling flexible configuration as single-ended, push-pull (180°), hybrid (90°), or Doherty amplifier stages. Its internal impedance matching eliminates external input matching networks across 1.3–1.6 GHz.

The transistor supports pulsed CW operation (10 µs pulse width, 12% duty cycle) at VDD = 28 V, IDQMain = 600 mA, and VGpeak = 0.9 V. Thermal design is enabled by a low RthJC of 0.38 °C/W and maximum junction temperature rating of 200 °C.

Key Specifications

Pinout & Package

The RF2L16180CB4 is housed in the thermally enhanced B4E surface-mount package (27.94 mm × 19.43 mm × 3.61 mm), featuring an exposed metal bottom-side source terminal for direct thermal coupling to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP61K25H and BLF278, RF2L16180CB4 uniquely balances 1.3–1.6 GHz coverage, Doherty-ready dual-gate layout, and 0.38 °C/W thermal resistance - making it the only drop-in solution for legacy 1.4 GHz macro base station upgrades requiring no matching redesign.

Availability

RF2L16180CB4 is available at Aetrix Electronics and suitable for multicarrier base station amplifiers, industrial RF heating systems, PCS band repeaters, and WCDMA femtocell boosters requiring stable component supply and long-term production continuity.

Supply support for RF2L16180CB4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF technologies for industrial, automotive, and communications markets.

RF2L16180CB4 belongs to ST's RF Power Transistor product line, engineered specifically for high-efficiency, high-reliability cellular infrastructure amplifiers operating in sub-2 GHz licensed and ISM bands.

FAQ

What is the recommended gate bias voltage for Class AB operation?

The datasheet specifies VGS(Q) = 1.5–4 V at VDS = 28 V and IDS = 100 mA. For stable Class AB operation, ST recommends setting VGS(A) and VGS(B) to 2.8 V using precision bias networks with temperature compensation, verified via drain current monitoring at TC = 85 °C.

Can RF2L16180CB4 be used in single-ended mode without external matching?

No - while internally matched for 1.3–1.6 GHz, the B4E package requires external broadband matching networks (e.g., microstrip stubs and shunt capacitors per Figure 2 in DS13287) to achieve 50 Ω input/output impedance and optimal P1dB performance in single-ended configurations.

Is the bottom-side source pad electrically isolated from the case?

Yes - the exposed source pad on the bottom of the B4E package is the electrical source terminal (pin 3), not chassis ground. It must be connected directly to the RF ground plane and thermally bonded to the heatsink; no dielectric isolation layer is present.

What is the maximum allowable pulsed DC supply voltage during transient startup?

Per Table 1, VDD maximum operating voltage is 32 V. During pulsed startup (e.g., soft-start sequences), peak VDD must not exceed 32 V for durations ≤100 ms, and must remain within absolute maximum V(BR)DSS = 65 V - but sustained operation above 28 V degrades long-term reliability and efficiency.